isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector Current -IC= -6A ·High DC Current Gain-hFE= 750(Min)@ IC= -2A ·Complement to Type BDW23/A/B/C APPLICATIONS ·Designed for hammer drivers, audio amplifiers applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCER VCEO VEBO PARAMETER Collector-Emitter Voltage Collector-Emitter Voltage VALUE BDW24 -45 BDW24A -60 BDW24B -80 BDW24C -100 BDW24 -45 BDW24A -60 BDW24B -80 BDW24C -100 UNIT V V Emitter-Base Voltage -5 V IC Collector Current-Continuous -6 A ICM Collector Current-Peak -8 A -0.2 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ 50 W TJ Junction Temperature 150 ℃ -65~150 ℃ B Tstg Storage Temperature Range isc Website：www.iscsemi.cn BDW24/A/B/C isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor BDW24/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BDW24 V(BR)CEO Collector-Emitter Breakdown Voltage MIN TYP. MAX UNIT -45 BDW24A -60 IC= -100mA ;IB=0 V BDW24B -80 BDW24C -100 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -2A; IB= -8mA -2 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -6A; IB= -60mA -3 V VBE(sat) Base-Emitter Saturation Voltage IC= -2A; IB= -8mA -2.5 V VBE(on)-1 Base-Emitter On Voltage IC= -1A ; VCE= -3V -2.5 V VBE(on)-2 Base-Emitter On Voltage IC= -6A ; VCE= -3V -3 V C-E Diode Forward Voltage IF= -2A -1.8 V -0.5 mA -0.2 mA -2 mA VECF ICEO ICBO Collector Cutoff Current Collector Cutoff Current B B B BDW24 VCE= -22V; IB= 0 BDW24A VCE= -30V; IB= 0 BDW24B VCE= -40V; IB= 0 BDW24C VCE= -50V; IB= 0 BDW24 VCB= -45V;IE= 0 BDW24A VCB= -60V;IE= 0 BDW24B VCB= -80V;IE= 0 BDW24C VCB= -100V;IE= 0 B B B B IEBO Emitter Cutoff Current VEB= -5V; IC=0 hFE-1 DC Current Gain IC= -1A ; VCE= -3V 1000 hFE-2 DC Current Gain IC= -2A ; VCE= -3V 750 hFE-3 DC Current Gain IC= -6A ; VCE= -3V 100 isc Website：www.iscsemi.cn 2 20000