NCS2005 Operational Amplifier, Low Power, 8 MHz GBW, Rail-to-Rail Input-Output The NCS2005 provides high performance in a wide range of applications. The NCS2005 offers beyond rail−to−rail input range, full rail−to−rail output swing, large capacitive load driving ability, and low distortion. The inputs can be driven by voltages that exceed both power supply rails, thus eliminating concerns over exceeding the common−mode voltage range. The rail−to−rail output swing capability provides the maximum possible dynamic range at the output. This is particularly important when operating on low supply voltages. Operating on supplies of 2.2 V to 32 V, the NCS2005 is excellent for a very wide range of applications in low power systems. With a supply current of 1.3 mA, the 8 MHz gain−bandwidth of this device supports applications where faster speeds are required. Placing the amplifier right at the signal source reduces board size and simplifies signal routing. The NCS2005 is available in a space−saving 5−pin SOT−23 package. www.onsemi.com 5 1 SOT23−5 SN SUFFIX CASE 483 MARKING DIAGRAM 5 JFKAYWG G 1 Features JFK A Y W G • Wide Power Supply Range: 2.2 V to 32 V • Common Mode Voltage Range Wider than Rail−to−Rail: • • • • • VCM = −0.1 V to 5.1 V @ VS = 5 V Wide Gain−bandwidth: 8 MHz typical Low Supply Current: 1.3 mA typical Stable with a 1 nF Capacitor Load with a Phase Margin over 25° @ VS = 10 V Available in a Space−saving 5−pin SOT23 Package These devices are Pb−free, Halogen free/BFR Free and are RoHS Compliant Typical Applications • • • • • • • = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) PIN DIAGRAM OUT 1 V− 2 + Active Filters Voltage Referenced Buffers Sensors and Instrumentation Microphone Amplifiers ASIC Input Drivers Portable Communications PCMCIA Cards IN+ 5 V+ 4 IN − − 3 (Top View) ORDERING INFORMATION Device NCS2005SN1T1G Package Shipping† SOT−23 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2016 January, 2016 − Rev. 1 1 Publication Order Number: NCS2005/D NCS2005 Table 1. PIN DESCRIPTION Pin Name Type Description 1 OUT Output Amplifier output 2 V− Power Negative power supply 3 IN+ Input Non−inverting input of amplifier 4 IN− Input Inverting input of amplifier 5 V+ Power Positive power supply Table 2. ABSOLUTE MAXIMUM RATINGS (Note 1) Symbol Value Units VS 0 to 35 V Input Voltage Range VCM (V−) − 0.3 V to (V+) + 0.3 V V Differential Input Voltage Range Vdiff 0 to 15 V rating Supply Voltage Range (V+ − V−) IIN ±10 mA IOUT ±20 mA Is 25 mA TJ(max) +150 °C Tstg −65 to +150 °C ESD Capability (Note 4) Human Body Model Charged Device Model HBM CDM 4000 400 Moisture Sensitivity Level (Note 5) MSL Level 1 Input Pin Current Output Pin Current (Note 2) Supply Current Maximum Junction Temperature (Note 3) Storage Temperature Range V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area. 2. Applies to both single supply and split supply operation. Continuous short circuit operation at elevated ambient temperature can result in exceeding the maximum allowed junction temperature of 150°C. 3. The maximum power dissipation is a function of TJ(MAX), TJA, and TA. The maximum allowable dissipation at any ambient temperature is Pd = (TJ(max) – TA)/TJA. All numbers apply for packages soldered directly to a PC board. 4. This device series incorporates ESD protection and is tested by the following methods: ESD Human Body Model tested per JESD22−A114 ESD Charged Device Model tested per ANSI/ESD S5.3.1−2009 5. Moisture Sensitivity Level tested per IPC/JEDEC standard: J−STD−020A Table 3. THERMAL CHARACTERISTICS Parameter Symbol Package Single Layer Board Multi Layer Board Units Thermal Resistance Junction−to−Ambient (Note 6) qJA SOT−23−5 408 (Note 6) 355 (Note 7) °C/W 6. Values based on a 1S standard PCB according to JEDEC51−3 with 1.0 oz copper and a 300 mm2 copper area 7. Values based on a 1S2P standard PCB according to JEDEC51−7 with 1.0 oz copper and a 100 mm2 copper area Table 4. OPERATING RANGES Parameter Power Supply Voltage Common Mode Input Voltage Ambient Temperature Symbol Min Max Units VS 2.2 32 V VCM (V−) − 0.1 (V+) + 0.1 V TA −40 125 °C Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. www.onsemi.com 2 NCS2005 Table 5. ELECTRICAL CHARACTERISTICS AT 10 V SUPPLY Unless otherwise noted, values are referenced to TA = 25°C, V+ = 10 V, V− = 0 V, VCM = V+/2, and RL > 1 MW to V+/2. Boldface limits apply from TA = −40°C to 125°C. (Notes 8, 9) Parameter Test Conditions Symbol Min Typ Max Units IS 1.30 1.5 mA PSRR 113 SUPPLY CHARACTERISTICS Quiescent Supply Current No load Power Supply Rejection Ratio VS = 2.7 V to 30 V 1.7 dB 70 INPUT CHARACTERISTICS VOS Input Offset Voltage 0.2 6 mV 6 Input Offset Voltage Drift Input Bias Current VCM = 0 V DV/DT 1 IIB 50 mV/°C 200 nA 200 VCM = 10 V 50 200 200 Input Offset Current VCM = 0 V IOS 2 70 nA 80 VCM = 10 V 2 70 80 Input Resistance RIN Input Capacitance Common Mode Rejection Ratio 95 CIN VCM = V− to V+ MW 3 pF CMRR 73 84 dB 9.65 9.80 OUTPUT CHARACTERISTICS High−level output voltage IL = 10 mA VOH Low−Level Output Voltage IL = 10 mA VOL 176 Output Current Capability Sourcing current IOUT 12 Sinking current V 300 mV mA 20 DYNAMIC PERFORMANCE Open Loop Voltage Gain RL = 10 kW AVOL Gain−Bandwidth Product RL = 10 kW Gain Margin RL = 10 kW Phase Margin RL = 10 kW Slew Rate RL = 10 kW Total Harmonic Distortion Plus Noise fIN = 1 kHz, AV = 2, RL = 2 kW 83 107 dB GBWP 8.5 MHz AM 5.5 dB yM 65 ° SR 2.8 V/ms THD+n 0.0015 % eN 45 nV/√Hz NOISE PERFORMANCE Voltage Noise Density f = 1 kHz 8. Refer to ABSOLUTE MAXIMUM RATINGS and APPLICATION INFORMATION for Safe Operating Area. 9. Performance guaranteed over the indicated operating temperature range by design and/or characterization tested at TJ = TA = 25°C. Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 3 NCS2005 Table 6. ELECTRICAL CHARACTERISTICS AT 5 V SUPPLY Unless otherwise noted, values are referenced to TA = 25°C, V+ = 5 V, V− = 0 V, VCM = V+/2, and RL ≥ 1 MW to V+/2. Boldface limits apply from TA = −40°C to 125°C, unless otherwise noted. (Notes 10, 11) Parameter Test Conditions Symbol Min Typ Max Units SUPPLY CHARACTERISTICS Quiescent Supply Current No load Power Supply Rejection Ratio VS = 2.7 V to 30 V IS 1.25 mA PSRR 113 dB 70 INPUT CHARACTERISTICS Input Offset Voltage VOS 0.2 DV/DT 1 mV/°C IIB 55 nA 6 mV 6 Input Offset Voltage Drift Input Bias Current VCM = 0 V VCM = 5 V Input Offset Current 55 IOS 2 Input Resistance RIN 45 MW Input Capacitance CIN 3 pF VCM = 0 V VCM = 5 V Common Mode Rejection Ratio nA 2 VCM = V− to V+ CMRR 68 90 dB VOH 4.75 4.83 V OUTPUT CHARACTERISTICS High−level Output Voltage IL = 5 mA Low−Level Output Voltage IL = 5 mA VOL 130 Output Current Capability Sourcing current IOUT 12 Sinking current 200 mV mA 20 DYNAMIC PERFORMANCE Open Loop Voltage Gain RL = 10 kW AVOL Gain−Bandwidth Product RL = 10 kW Gain Margin Phase Margin 83 100 dB GBWP 8.5 MHz RL = 10 kW AM 5.5 dB RL = 10 kW yM 65 ° Slew Rate RL = 10 kW SR 2.7 V/ms Total Harmonic Distortion Plus Noise fIN = 1 kHz, AV = 2, RL = 2 kW THD+n 0.002 % eN 45 nV/√Hz NOISE PERFORMANCE Voltage Noise Density f = 1kHz 10. Refer to ABSOLUTE MAXIMUM RATINGS and APPLICATION INFORMATION for Safe Operating Area. 11. Performance guaranteed over the indicated operating temperature range by design and/or characterization tested at TJ = TA = 25°C. www.onsemi.com 4 NCS2005 Table 7. ELECTRICAL CHARACTERISTICS AT 2.7 V SUPPLY Unless otherwise noted, values are referenced to TA = 25°C, V+ = 2.7 V, V− = 0 V, VCM = V+/2, and RL ≥ 1 MW to V+/2. Boldface limits apply from TA = −40°C to 125°C, unless otherwise noted. (Notes 12, 13) Parameter Test Conditions Symbol Min Typ Max Units SUPPLY CHARACTERISTICS Quiescent Supply Current No load IS Power Supply Rejection Ratio VS = 2.7 V to 30 V PSRR 70 1.25 mA 113 dB INPUT CHARACTERISTICS Input Offset Voltage VOS 0.2 DV/DT 1 mV/°C IIB 45 nA 6 mV 6 Input Offset Voltage Drift Input Bias Current VCM = 0 V VCM = 2.7 V Input Offset Current 45 IOS VCM = 0 V nA 2 VCM = 2.7 V 2 Input Resistance RIN 90 MW Input Capacitance CIN 3 pF Common Mode Rejection Ratio VCM = V− to V+ CMRR 58 96 dB 2.50 2.60 V OUTPUT CHARACTERISTICS High−Level Output Voltage IL = 2.7 mA VOH Low−Level Output Voltage IL = 2.7 mA VOL 100 Output Current Capability Sourcing current IOUT 12 Sinking current 130 mV mA 20 DYNAMIC PERFORMANCE Open Loop Voltage Gain RL = 10 kW AVOL 114 dB Gain−Bandwidth Product RL = 10 kW GBWP 8.5 MHz Gain Margin RL = 10 kW AM 6 dB Phase Margin RL = 10 kW yM 60 ° Slew Rate RL = 10 kW SR 2.6 V/ms Total Harmonic Distortion Plus Noise fIN = 1 kHz, AV = 2, RL = 2 kW THD+n 0.05 % eN 45 nV/√Hz 73 NOISE PERFORMANCE Voltage Noise Density f = 1kHz 12. Refer to ABSOLUTE MAXIMUM RATINGS and APPLICATION INFORMATION for Safe Operating Area. 13. Performance guaranteed over the indicated operating temperature range by design and/or characterization tested at TJ = TA = 25°C. www.onsemi.com 5 NCS2005 TYPICAL CHARACTERISTICS 0.35 1.5 INPUT OFFSET VOLTAGE (mV) SUPPLY CURRENT (mA) 1.6 T = −40°C T = 25°C 1.4 1.3 T = 125°C 1.2 T = 85°C 1.1 1.0 0 5 10 15 25 30 35 0.25 0.15 0.10 0.05 0 T = −40°C −0.05 VS = ±13.5 V −0.10 −0.15 −1.35 −0.85 −0.35 T = 25°C 0.15 0.65 1.15 INPUT VOLTAGE (V) Figure 1. Quiescent Current Per Channel vs. Supply Voltage Figure 2. Input Offset Voltage vs. Common Mode Input Voltage 0.35 INPUT OFFSET VOLTAGE (mV) T = 85°C 0.30 T = 125°C 0.25 0.20 0.15 0.10 0.05 T = −40°C 0 T = 85°C 0.30 0.25 T = 125°C 0.20 T = −40°C T = 25°C 0.15 0.10 0.05 0 −0.05 −0.05 −0.10 −0.15 −2.5 VS = ±2.5 V −0.10 −0.15 −5 T = 25°C −1.5 −0.5 0.5 1.5 2.5 VS = ±5 V −4 −3 −2 −1 0 1 2 3 4 INPUT VOLTAGE (V) INPUT VOLTAGE (V) Figure 3. Input Offset Voltage vs. Common Mode Input Voltage Figure 4. Input Offset Voltage vs. Common Mode Voltage 180 5 120 VS = 5 V RL = 10 kW TA = 25°C 160 140 120 PHASE 100 80 GAIN 60 T = 25°C RL = 10 kW 100 CMRR (dB) MAGNITUDE (dB) / PHASE (deg) T = 125°C 0.20 SUPPLY VOLTAGE (V) 0.35 INPUT OFFSET VOLTAGE (mV) 20 T = 85°C 0.30 80 60 40 40 CL = 1 nF CL = 250 pF CL = 25 pF 20 0 −20 VS = 2.7 V VS = 5.0 V VS = 10 V 20 0 10 100 1K 10K 100K 1M 10M 100M 10 FREQUENCY (Hz) 100 1K 10K 100K 1M FREQUENCY (Hz) Figure 5. Gain and Phase vs. Frequency Figure 6. CMRR vs. Frequency www.onsemi.com 6 10M 100M NCS2005 TYPICAL CHARACTERISTICS 120 190 VS = ±2.5 V T = 25°C VIN = 100 mVpp 170 VOLTAGE NOISE (nV/√Hz) 100 PSRR (dB) 80 PSRR− 60 PSRR+ 40 20 0 110 90 70 50 10 10 100 1K 10K 100K 1M 10M 100M 10 100 1K 10K 100K FREQUENCY (Hz) FREQUENCY (Hz) Figure 7. PSRR vs. Frequency Figure 8. Input Voltage Noise vs. Frequency 1.0 LOW LEVEL OUTPUT VOLTAGE (V) 10 AV = 2 RL = 2 kW 1 THD+N (%) 130 30 −20 0.1 VS = 2.7 V 0.01 VS = 5.0 V 0.001 VS = 10 V T = 125°C VS = 2.7 V 0.8 T = 85°C 0.6 T = 25°C 0.4 T = −40°C 0.2 0 0.0001 10 100 1K 10K 100K 0 2 4 6 8 10 12 14 16 18 FREQUENCY (Hz) LOW LEVEL OUTPUT CURRENT (mA) Figure 9. THD+N vs. Frequency Figure 10. Low Level Output Voltage vs. Output Current @ Vs = 2.7 V 3.00 2.75 20 1.0 LOW LEVEL OUTPUT VOLTAGE (V) HIGH LEVEL OUTPUT VOLTAGE (V) 150 VS = 2.7 V 2.50 2.25 2.00 1.75 1.50 1.25 T = 85°C T = 25°C 1.00 0.75 0.50 0.25 0 T = 125°C 0 −2 −4 −6 −8 T = −40°C −10 −12 −14 −16 −18 −20 0.9 T = 125°C VS = 5 V 0.8 T = 85°C 0.7 0.6 T = 25°C 0.5 0.4 0.3 T = −40°C 0.2 0.1 0 0 2 4 6 8 10 12 14 16 18 HIGH LEVEL OUTPUT CURRENT (mA) LOW LEVEL OUTPUT CURRENT (mA) Figure 11. High Level Output Voltage vs. Output Current @ Vs = 2.7 V Figure 12. Low Level Output Voltage vs. Output Current @ Vs = 5 V www.onsemi.com 7 20 NCS2005 1.0 5 T = −40°C 4 T = 25°C 3 2 T = 85°C VS = 5 V 1 0 T = 125°C −1 0 HIGH LEVEL OUTPUT VOLTAGE (V) LOW LEVEL OUTPUT VOLTAGE (V) 6 −2 −4 −6 −8 T = 125°C 0.9 VS = 10 V 0.8 T = 85°C 0.7 0.6 T = 25°C 0.5 0.4 0.3 T = −40°C 0.2 0.1 0 0 −10 −12 −14 −16 −18 −20 2 4 6 8 10 12 14 16 18 HIGH LEVEL OUTPUT CURRENT (mA) LOW LEVEL OUTPUT CURRENT (mA) Figure 13. Low Level Output Voltage vs. Output Current Figure 14. High Level Output Voltage vs. Output Current 10 20 75 9 8 50 T = −40°C 7 6 VOLTAGE (mV) HIGH LEVEL OUTPUT VOLTAGE (V) TYPICAL CHARACTERISTICS T = 25°C 5 T = 85°C 4 3 T = 125°C 2 1 25 VS = ±2.5 V AV = +1 RL = 10 kW CL = 24.7 pF 0 −25 Input Output −50 VS = 10 V 0 −1 0 −2 −4 −6 −8 −75 −10 −10 −12 −14 −16 −18 −20 0 10 20 30 40 50 HIGH LEVEL OUTPUT CURRENT (mA) TIME (ms) Figure 15. Low Level Output Voltage vs. Output Current Figure 16. Non−inverting Small Signal Transient Response 60 100 Input Output 80 2 1 40 VOLTAGE (V) VOLTAGE (mV) 60 VS = ±2.5 V AV = −1 RL = 10 kW CL = 24.7 pF 20 0 −20 VS = ±2.5 V AV = +1 RL = 10 kW CL = 24.7 pF 0 −1 −40 −60 −80 −100 −10 Input Output −2 −3 0 10 20 30 40 50 60 −10 0 10 20 30 40 50 TIME (ms) TIME (ms) Figure 17. Inverting Small Signal Transient Response Figure 18. Non−Inverting Large Signal Transient Response www.onsemi.com 8 60 NCS2005 TYPICAL CHARACTERISTICS 0 BIAS CURRENT (nA) VOLTAGE (V) 0 −1 Input Output −2 0 10 20 30 0.8 −20 VS = ±2.5 V AV = +1 RL = 10 kW CL = 24.7 pF 1 −3 −10 1.0 VS = ±2.5 V −10 0.6 −30 −40 0.4 −50 0.2 −60 0 −70 40 −90 −100 −40 60 50 −0.2 Bias Current + Bias Current − Offset Current −80 −0.4 −0.6 −15 10 35 60 85 110 TIME (ms) TEMPERATURE (°C) Figure 19. Inverting Large Signal Transient Response Figure 20. Input Bias and Offset Current vs. Temperature www.onsemi.com 9 OFFSET CURRENT (nA) 2 NCS2005 PACKAGE DIMENSIONS TSOP−5 CASE 483 ISSUE L NOTE 5 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.15 PER SIDE. DIMENSION A. 5. OPTIONAL CONSTRUCTION: AN ADDITIONAL TRIMMED LEAD IS ALLOWED IN THIS LOCATION. TRIMMED LEAD NOT TO EXTEND MORE THAN 0.2 FROM BODY. D 5X 0.20 C A B 0.10 T M 2X 0.20 T B 5 1 4 2 S 3 K B DETAIL Z G A A TOP VIEW DIM A B C D G H J K M S DETAIL Z J C 0.05 H SIDE VIEW C SEATING PLANE END VIEW MILLIMETERS MIN MAX 3.00 BSC 1.50 BSC 0.90 1.10 0.25 0.50 0.95 BSC 0.01 0.10 0.10 0.26 0.20 0.60 0_ 10 _ 2.50 3.00 SOLDERING FOOTPRINT* 0.95 0.037 1.9 0.074 2.4 0.094 1.0 0.039 0.7 0.028 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 www.onsemi.com 10 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NCS2005/D