Eudyna FLM7185-12F C-band internally matched fet Datasheet

FLM7185-12F
C-Band Internally Matched FET
FEATURES
•
•
•
•
•
•
•
High Output Power: P1dB = 41.0dBm (Typ.)
High Gain: G1dB = 8.0dB (Typ.)
High PAE: ηadd = 30% (Typ.)
Low IM3 = -45dBc@Po = 30.0dBm
Broad Band: 7.1 ~ 7.9GHz
Impedance Matched Zin/Zout = 50Ω
Hermetically Sealed Package
DESCRIPTION
The FLM7185-12F is a power GaAs FET that is internally matched for
standard communication bands to provide optimum power and gain in a
50 ohm system.
Eudyna’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Condition
Symbol
Rating
Unit
Drain-Source Voltage
VDS
15
V
Gate-Source Voltage
VGS
-5
V
57.6
W
Total Power Dissipation
Tc = 25°C
PT
Storage Temperature
Tstg
-65 to +175
°C
Channel Temperature
Tch
175
°C
Min.
Limit
Typ. Max.
Unit
VDS = 5V, VGS = 0V
-
5000 7500
mA
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 32.0 and -5.6 mA respectively with
gate resistance of 50Ω.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Saturated Drain Current
Symbol
IDSS
Test Conditions
Transconductance
gm
VDS = 5V, IDS = 3250mA
-
5000
-
mS
Pinch-off Voltage
Vp
VDS = 5V, IDS = 250mA
-0.5
-1.5
-3.0
V
IGS = -250µA
-5.0
-
-
V
40.0
41.0
-
dBm
7.0
8.0
-
dB
Gate Source Breakdown Voltage
VGSO
Output Power at 1dB G.C.P.
P1dB
Power Gain at 1dB G.C.P.
G1dB
Drain Current
Power-added Efficiency
Idsr
ηadd
VDS = 10V,
IDS = 0.65IDSS (Typ.),
f = 7.1 ~ 8.5 GHz,
ZS=ZL= 50 ohm
-
3500 4500
mA
-
30
-
%
-
-
±0.6
dB
-42
-45
-
dBc
Gain Flatness
∆G
3rd Order Intermodulation
Distortion
IM3
f = 8.5 GHz, ∆f = 10 MHz
2-Tone Test
Pout = 30.0dBm S.C.L.
Thermal Resistance
Rth
Channel to Case
-
2.3
2.6
°C/W
10V x Idsr x Rth
-
-
80
°C
Channel Temperature Rise
∆Tch
CASE STYLE: IK
Edition 1.2
August 2004
G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level
1
FLM7185-12F
C-Band Internally Matched FET
OUTPUT POWER & IM3 vs. INPUT POWER
POWER DERATING CURVE
35
40
30
20
10
0
50
100
150
33
VDS=10V
f1 = 8.5 GHz
f2 = 8.51 GHz
2-tone test
31
Pout
29
-30
27
-35
-40
25
IM3
23
-45
21
-50
19
-55
200
Case Temperature (°C)
16
18
20
22
IM3 (dBc)
50
Output Power (S.C.L.) (dBm)
Total Power Dissipation (W)
60
24
Input Power (S.C.L.) (dBm)
S.C.L.: Single Carrier Level
OUTPUT POWER vs. INPUT POWER
OUTPUT POWER vs. FREQUENCY
VDS=10V
43
P1dB
42
Pout
Pin=34dBm
32dBm
40
30dBm
39
28dBm
38
37
26dBm
36
40
38
36
45
34
30
ηadd
15
32
35
24
7.1
7.3
7.5
7.7
7.9
8.1
8.3
26
28
30
32
8.5
Input Power (dBm)
Frequency (GHz)
2
34
ηadd (%)
41
Output Power (dBm)
Output Power (dBm)
42
VDS=10V
f = 7.7 GHz
FLM7185-12F
C-Band Internally Matched FET
S11
S22
+j50
+j100
+j25
7.3
7.0 GHz
9.0
8.9
7.0 GHz
+j10
7.2
8.8
25
8.0
7.4
8.7
7.6
8.8
-j10
8.5
7.8
9.0
8.0
8.6
8.4 8.2
7.6
8.5
8.2
7.6
SCALE FOR |S12| 7.4
7.7
250
180°
0.2
7.5
8.4
7.2
8.6
1
8.8
7.3
-j250
2
9.0
7.2
3
7.1
7.0 GHz
4
-j100
0°
8.7
7.0 GHz
7.9
8.0
8.6
0.1
7.4
8.3 8.2
-j25
8.0
7.8
7.6
8.1
8.4
8.4
7.7
7.8
8.6
8.3
7.8
+j250
7.5
50Ω
8.1 8.2
7.9
7.4
SCALE FOR |S21|
7.2
7.1
0
S21
S12
+90°
8.8
8.9
9.0
-90°
-j50
FREQUENCY
(MHZ)
MAG
ANG
S-PARAMETERS
VDS = 10V, IDS = 3250mA
S21
S12
MAG
ANG
MAG
ANG
7000
.665
137.1
3.537
-107.2
.017
7100
.626
119.6
3.608
-120.7
.025
7200
.592
97.1
3.612
-138.2
.033
-178.1
.518
57.8
7300
.577
74.7
3.558
-155.3
.039
162.3
.514
41.1
7400
.575
53.6
3.435
-171.8
.046
145.3
.516
26.3
7500
.583
35.2
3.312
172.6
.051
131.0
.519
12.8
7600
.597
19.3
3.169
158.0
.054
115.4
.526
0.7
7700
.610
5.1
3.045
144.1
.059
102.4
.531
-10.2
7800
.616
-7.8
2.945
131.1
.062
90.8
.534
-20.5
7900
.613
-19.8
2.889
118.6
.065
77.0
.533
-30.2
8000
.599
-31.2
2.897
106.2
.069
66.0
.528
-39.1
8100
.581
-42.5
2.938
92.8
.075
54.3
.516
-47.8
8200
.556
-54.9
2.987
78.9
.080
41.0
.498
-56.6
8300
.524
-69.4
3.055
64.6
.087
27.8
.473
-65.7
8400
.476
-87.6
3.144
49.3
.091
13.4
.435
-74.8
8500
.424
-110.2
3.220
32.6
.097
-1.4
.380
-84.1
8600
.375
-139.2
3.264
15.1
.103
-19.0
.315
-91.5
8700
.351
-173.9
3.250
-3.3
.107
-36.8
.251
-94.1
8800
.370
150.2
3.168
-22.6
.107
-55.2
.204
-90.2
8900
.423
118.4
3.016
-41.9
.104
-74.0
.200
-83.9
9000
.491
92.3
2.818
-61.1
.098
-93.2
.236
-84.9
S11
3
S22
MAG
ANG
-134.4
.532
89.7
-157.6
.525
75.0
FLM7185-12F
C-Band Internally Matched FET
2.0 Min.
(0.079)
Case Style "IK"
Metal-Ceramic Hermetic Package
0.1
(0.004)
2
3
2.0 Min.
(0.079)
4-R 1.3±0.15
(0.051)
17.4±0.3
(0.685)
8.0±0.2
(0.315)
1
0.6
(0.024)
1.4
(0.055)
14.9
(0.587)
20.4±0.3
(0.803)
2.4±0.15
(0.094)
5.5 Max.
(0.217)
1. Gate
2. Source (Flange)
3. Drain
Unit: mm(inches)
24±0.5
(0.945)
For further information please contact:
Eudyna Devices USA Inc.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
TEL: (408) 232-9500
FAX: (408) 428-9111
CAUTION
Eudyna Devices Inc. products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
www.us.eudyna.com
• Do not put this product into the mouth.
Eudyna Devices Europe Ltd.
• Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
United Kingdom
TEL: +44 (0) 1628 504800
FAX: +44 (0) 1628 504888
Eudyna Devices Asia Pte Ltd.
Hong Kong Branch
Rm. 1101, Ocean Centre, 5 Canton Rd.
Tsim Sha Tsui, Kowloon, Hong Kong
TEL: +852-2377-0227
FAX: +852-2377-3921
• Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
Eudyna Devices Inc. reserves the right to change products and specifications
without notice. The information does not convey any license under rights of
Eudyna Devices Inc. or others.
© 2004 Eudyna Devices USA Inc.
Printed in U.S.A.
Eudyna Devices Inc.
Sales Division
1, Kanai-cho, Sakae-ku
Yokohama, 244-0845, Japan
TEL: +81-45-853-8156
FAX: +81-45-853-8170
4
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