Previous Datasheet Index Next Data Sheet PD - 9.1138 IRGPH20S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Switching-loss rating includes all "tail" losses • Optimized for line frequency operation (to 400Hz) See Fig. 1 for Current vs. Frequency curve VCES = 1200V VCE(sat) ≤ 3.3V G @VGE = 15V, IC = 6.6A E n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications. TO-247AC Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw. Max. Units 1200 10 6.6 20 20 ±20 5.0 60 24 -55 to +150 V A V mJ W °C 300 (0.063 in. (1.6mm) from case) 10 lbf•in (1.1N•m) Thermal Resistance Parameter RθJC RθCS RθJA Wt Junction-to-Case Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight C-39 To Order Min. Typ. Max. — — — — — 0.24 — 6 (0.21) 2.1 — 40 — Units °C/W g (oz) Revision 0 Previous Datasheet Index Next Data Sheet IRGPH20S Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES V(BR)ECS ∆V(BR)CES/∆TJ VCE(on) VGE(th) ∆VGE(th)/∆TJ gfe ICES IGES Parameter Min. Typ. Max. Units Conditions Collector-to-Emitter Breakdown Voltage 1200 — — V VGE = 0V, IC = 250µA Emitter-to-Collector Breakdown Voltage 20 — — V VGE = 0V, IC = 1.0A Temperature Coeff. of Breakdown Voltage — 1.3 — V/°C VGE = 0V, IC = 1.0mA Collector-to-Emitter Saturation Voltage — 2.2 3.3 IC = 6.6A VGE = 15V — 2.9 — V IC = 10A See Fig. 2, 5 — 2.9 — IC = 6.6A, T J = 150°C Gate Threshold Voltage 3.0 — 5.5 VCE = VGE, IC = 250µA Temperature Coeff. of Threshold Voltage — -12 — mV/°C VCE = VGE, IC = 250µA Forward Transconductance 1.5 3.0 — S VCE = 100V, IC = 6.6A Zero Gate Voltage Collector Current — — 250 µA VGE = 0V, VCE = 1200V — — 1000 VGE = 0V, VCE = 1200V, T J = 150°C Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres Min. — — — — — — — — — — — — — — — — — — — Typ. Max. Units Conditions 16 24 IC = 6.6A 5.8 8.7 nC VCC = 400V See Fig. 8 4.0 6.0 VGE = 15V 28 — TJ = 25°C 32 — ns IC = 6.6A, V CC = 960V 930 1400 VGE = 15V, RG = 50Ω 850 1550 Energy losses include "tail" 0.57 — 5.4 — mJ See Fig. 9, 10, 11, 14 6.0 9.0 28 — TJ = 150°C, 45 — ns IC = 6.6A, V CC = 960V 1100 — VGE = 15V, RG = 50Ω 1800 — Energy losses include "tail" 10 — mJ See Fig. 10, 14 13 — nH Measured 5mm from package 360 — VGE = 0V 24 — pF VCC = 30V See Fig. 7 4.8 — ƒ = 1.0MHz Notes: Repetitive rating; V GE=20V, pulse width limited by max. junction temperature. ( See fig. 13b ) Repetitive rating; pulse width limited by maximum junction temperature. VCC=80%(VCES), VGE=20V, L=10µH, RG= 50Ω, ( See fig. 13a ) Pulse width ≤ 80µs; duty factor ≤ 0.1%. C-40 To Order Pulse width 5.0µs, single shot. Previous Datasheet Index Next Data Sheet IRGPH20S 15 F o r b o th : 12 Load Current (A) Tria n g u la r w a v e : D u ty c y c le : 5 0 % TJ = 1 2 5 ° C T s in k = 9 0 ° C G a te d riv e a s s p e c ifie d P o w e r D is s ip a tio n = 1 5 W C la m p v o lta g e : 8 0 % o f ra te d 9 S q u are w av e: 6 0 % o f ra te d v o lta g e 6 3 Id e a l d io d e s A 0 0.1 1 10 100 f, Frequency (kHz) Fig. 1 - Typical Load Current vs. Frequency (For square wave, I=IRMS of fundamental; for triangular wave, I=IPK) 100 IC , Collector-to-Emitter Current (A) IC , Collector-to-Emitter Current (A) 100 TJ = 25°C 10 TJ = 150°C 1 10 TJ = 150°C VGE = 15V 20µs PULSE WIDTH A 0.1 0.1 1 TJ = 25°C VCC = 100V 5µs PULSE WIDTH A 1 5 10 10 15 VGE, Gate-to-Emitter Voltage (V) VCE , Collector-to-Emitter Voltage (V) Fig. 3 - Typical Transfer Characteristics Fig. 2 - Typical Output Characteristics C-41 To Order 20 Previous Datasheet Index Next Data Sheet IRGPH20S 5.0 VGE = 15V VCE , Collector-to-Emitter Voltage (V) Maximum DC Collector Current (A) 10 8 6 4 2 A 0 25 50 75 100 125 VGE = 15V 80µs PULSE WIDTH I C = 10A 4.0 3.0 I C = 6.6A 2.0 I C = 3.3A 1.0 A 0.0 150 -60 TC , Case Temperature (°C) -40 -20 0 20 40 60 80 100 120 140 160 TC, Case Temperature (°C) Fig. 5 - Collector-to-Emitter Voltage vs. Case Temperature Fig. 4 - Maximum Collector Current vs. Case Temperature T he rm al R e sp ons e (Z thJ C ) 10 1 D = 0 .5 0 0 .2 0 0 .1 0 PD M 0 .0 5 0.1 0 .0 2 0 .0 1 t S IN G L E P U L S E (T H E R M A L R E S P O N S E ) t2 N o te s: 1 . D u ty fa c to r D = t 0.01 0.00001 1 1 / t 2 2 . P e a k TJ = P D M x Z thJ C + T C 0.0001 0.001 0.01 0.1 1 t 1 , R e c ta n gu la r P u ls e D ura tio n (s e c ) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case C-42 To Order 10 Previous Datasheet Index Next Data Sheet IRGPH20S 600 VGE , Gate-to-Emitter Voltage (V) 500 C, Capacitance (pF) 20 V GE = 0V, f = 1MHz C ies = C ge + C gc , Cce SHORTED C res = C gc C oes = C ce + C gc Cies 400 300 Coes 200 100 Cres 16 12 8 4 A 0 1 10 VCE = 400V I C = 6.6A A 0 0 100 4 Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Total Switching Losses (mJ) Total Switching Losses (mJ) 100 5.52 5.48 5.44 10 20 30 40 50 20 RG = 50Ω V GE = 15V V CC = 960V I C = 10A I C = 6.6A 10 I C = 3.3A A 5.40 0 16 Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage VCC = 960V VGE = 15V T C = 25°C I C = 6.6A 5.56 12 Qg , Total Gate Charge (nC) VCE, Collector-to-Emitter Voltage (V) 5.60 8 1 -60 60 A -40 -20 0 20 40 60 80 100 120 140 160 TC , Case Temperature (°C) RG , Gate Resistance (Ω) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Case Temperature C-43 To Order Previous Datasheet Index Next Data Sheet IRGPH20S 100 RG = 50Ω T C = 150°C V CC = 960V V GE = 15V IC , Collector-to-Emitter Current (A) Total Switching Losses (mJ) 16 12 8 4 A 0 0 2 4 6 8 10 VGE = 20V TJ = 125°C 10 SAFE OPERATING AREA 1 A 0.1 1 12 10 100 1000 VCE, Collector-to-Emitter Voltage (V) I C , Collector-to-Emitter Current (A) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA Refer to Section D for the following: Appendix G: Section D - page D-9 Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit Fig. 14a - Switching Loss Test Circuit Fig. 14b - Switching Loss Waveform Package Outline 3 - JEDEC Outline TO-247AC (TO-3P) C-44 To Order Section D - page D-13 10000