IRF IRGPH20 Insulated gate bipolar transistor(vces=1200v, @vge=15v, ic=6.6a) Datasheet

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PD - 9.1138
IRGPH20S
Standard Speed IGBT
INSULATED GATE BIPOLAR TRANSISTOR
Features
C
• Switching-loss rating includes all "tail" losses
• Optimized for line frequency operation (to 400Hz)
See Fig. 1 for Current vs. Frequency curve
VCES = 1200V
VCE(sat) ≤ 3.3V
G
@VGE = 15V, IC = 6.6A
E
n-channel
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
higher usable current densities than comparable bipolar transistors, while at
the same time having simpler gate-drive requirements of the familiar power
MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications.
TO-247AC
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Max.
Units
1200
10
6.6
20
20
±20
5.0
60
24
-55 to +150
V
A
V
mJ
W
°C
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
Wt
Junction-to-Case
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
C-39
To Order
Min.
Typ.
Max.
—
—
—
—
—
0.24
—
6 (0.21)
2.1
—
40
—
Units
°C/W
g (oz)
Revision 0
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IRGPH20S
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)CES
V(BR)ECS
∆V(BR)CES/∆TJ
VCE(on)
VGE(th)
∆VGE(th)/∆TJ
gfe
ICES
IGES
Parameter
Min. Typ. Max. Units
Conditions
Collector-to-Emitter Breakdown Voltage 1200 —
—
V
VGE = 0V, IC = 250µA
Emitter-to-Collector Breakdown Voltage
20
—
—
V
VGE = 0V, IC = 1.0A
Temperature Coeff. of Breakdown Voltage
—
1.3
— V/°C VGE = 0V, IC = 1.0mA
Collector-to-Emitter Saturation Voltage
—
2.2 3.3
IC = 6.6A
VGE = 15V
—
2.9
—
V
IC = 10A
See Fig. 2, 5
—
2.9
—
IC = 6.6A, T J = 150°C
Gate Threshold Voltage
3.0
—
5.5
VCE = VGE, IC = 250µA
Temperature Coeff. of Threshold Voltage
—
-12
— mV/°C VCE = VGE, IC = 250µA
Forward Transconductance
1.5 3.0
—
S
VCE = 100V, IC = 6.6A
Zero Gate Voltage Collector Current
—
—
250
µA
VGE = 0V, VCE = 1200V
—
— 1000
VGE = 0V, VCE = 1200V, T J = 150°C
Gate-to-Emitter Leakage Current
—
— ±100 nA
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ. Max. Units
Conditions
16
24
IC = 6.6A
5.8 8.7
nC
VCC = 400V
See Fig. 8
4.0 6.0
VGE = 15V
28
—
TJ = 25°C
32
—
ns
IC = 6.6A, V CC = 960V
930 1400
VGE = 15V, RG = 50Ω
850 1550
Energy losses include "tail"
0.57 —
5.4
—
mJ
See Fig. 9, 10, 11, 14
6.0 9.0
28
—
TJ = 150°C,
45
—
ns
IC = 6.6A, V CC = 960V
1100 —
VGE = 15V, RG = 50Ω
1800 —
Energy losses include "tail"
10
—
mJ
See Fig. 10, 14
13
—
nH
Measured 5mm from package
360
—
VGE = 0V
24
—
pF
VCC = 30V
See Fig. 7
4.8
—
ƒ = 1.0MHz
Notes:
Repetitive rating; V GE=20V, pulse width
limited by max. junction temperature.
( See fig. 13b )
Repetitive rating; pulse width limited
by maximum junction temperature.
VCC=80%(VCES), VGE=20V, L=10µH,
RG= 50Ω, ( See fig. 13a )
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
C-40
To Order
Pulse width 5.0µs,
single shot.
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IRGPH20S
15
F o r b o th :
12
Load Current (A)
Tria n g u la r w a v e :
D u ty c y c le : 5 0 %
TJ = 1 2 5 ° C
T s in k = 9 0 ° C
G a te d riv e a s s p e c ifie d
P o w e r D is s ip a tio n = 1 5 W
C la m p v o lta g e :
8 0 % o f ra te d
9
S q u are w av e:
6 0 % o f ra te d
v o lta g e
6
3
Id e a l d io d e s
A
0
0.1
1
10
100
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=IRMS of fundamental; for triangular wave, I=IPK)
100
IC , Collector-to-Emitter Current (A)
IC , Collector-to-Emitter Current (A)
100
TJ = 25°C
10
TJ = 150°C
1
10
TJ = 150°C
VGE = 15V
20µs PULSE WIDTH A
0.1
0.1
1
TJ = 25°C
VCC = 100V
5µs PULSE WIDTH A
1
5
10
10
15
VGE, Gate-to-Emitter Voltage (V)
VCE , Collector-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics
C-41
To Order
20
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IRGPH20S
5.0
VGE = 15V
VCE , Collector-to-Emitter Voltage (V)
Maximum DC Collector Current (A)
10
8
6
4
2
A
0
25
50
75
100
125
VGE = 15V
80µs PULSE WIDTH
I C = 10A
4.0
3.0
I C = 6.6A
2.0
I C = 3.3A
1.0
A
0.0
150
-60
TC , Case Temperature (°C)
-40
-20
0
20
40
60
80
100 120 140 160
TC, Case Temperature (°C)
Fig. 5 - Collector-to-Emitter Voltage vs.
Case Temperature
Fig. 4 - Maximum Collector Current vs.
Case Temperature
T he rm al R e sp ons e (Z thJ C )
10
1
D = 0 .5 0
0 .2 0
0 .1 0
PD M
0 .0 5
0.1
0 .0 2
0 .0 1
t
S IN G L E P U L S E
(T H E R M A L R E S P O N S E )
t2
N o te s:
1 . D u ty fa c to r D = t
0.01
0.00001
1
1
/ t
2
2 . P e a k TJ = P D M x Z thJ C + T C
0.0001
0.001
0.01
0.1
1
t 1 , R e c ta n gu la r P u ls e D ura tio n (s e c )
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
C-42
To Order
10
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IRGPH20S
600
VGE , Gate-to-Emitter Voltage (V)
500
C, Capacitance (pF)
20
V GE = 0V,
f = 1MHz
C ies = C ge + C gc , Cce SHORTED
C res = C gc
C oes = C ce + C gc
Cies
400
300
Coes
200
100
Cres
16
12
8
4
A
0
1
10
VCE = 400V
I C = 6.6A
A
0
0
100
4
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
Total Switching Losses (mJ)
Total Switching Losses (mJ)
100
5.52
5.48
5.44
10
20
30
40
50
20
RG = 50Ω
V GE = 15V
V CC = 960V
I C = 10A
I C = 6.6A
10
I C = 3.3A
A
5.40
0
16
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
VCC = 960V
VGE = 15V
T C = 25°C
I C = 6.6A
5.56
12
Qg , Total Gate Charge (nC)
VCE, Collector-to-Emitter Voltage (V)
5.60
8
1
-60
60
A
-40
-20
0
20
40
60
80
100 120 140 160
TC , Case Temperature (°C)
RG , Gate Resistance (Ω)
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
Fig. 10 - Typical Switching Losses vs.
Case Temperature
C-43
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IRGPH20S
100
RG = 50Ω
T C = 150°C
V CC = 960V
V GE = 15V
IC , Collector-to-Emitter Current (A)
Total Switching Losses (mJ)
16
12
8
4
A
0
0
2
4
6
8
10
VGE = 20V
TJ = 125°C
10
SAFE OPERATING AREA
1
A
0.1
1
12
10
100
1000
VCE, Collector-to-Emitter Voltage (V)
I C , Collector-to-Emitter Current (A)
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
Fig. 12 - Turn-Off SOA
Refer to Section D for the following:
Appendix G: Section D - page D-9
Fig. 13a - Clamped Inductive Load Test Circuit
Fig. 13b - Pulsed Collector Current Test Circuit
Fig. 14a - Switching Loss Test Circuit
Fig. 14b - Switching Loss Waveform
Package Outline 3 - JEDEC Outline TO-247AC (TO-3P)
C-44
To Order
Section D - page D-13
10000
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