SemiHow HCS65R180S Superior avalanche rugged technology Datasheet

BVDSS = 650 V
RDS(on) typ = 0.15 ȍ
HCS65R180S
ID = 20 A
650V N-Channel Super Junction MOSFET
TO-220F
FEATURES
‰ Originative New Design
‰ Superior Avalanche Rugged Technology
‰ Robust Gate Oxide Technology
1
2
3
1.Gate 2. Drain 3. Source
‰ Very Low Intrinsic Capacitances
‰ Excellent Switching Characteristics
‰ Unrivalled Gate Charge : 46 nC (Typ.)
‰ Extended Safe Operating Area
‰ Lower RDS(ON) ȍ 7\S #9GS=10V
‰ 100% Avalanche Tested
Absolute Maximum Ratings
Symbol
VDSS
TC=25୅ unless otherwise specified
Parameter
Drain-Source Voltage
Value
Units
650
V
Drain Current
– Continuous (TC = 25୅)
20 *
A
Drain Current
– Continuous (TC = 100୅)
10 *
A
IDM
Drain Current
– Pulsed
60 *
A
VGS
Gate-Source Voltage
Static
ρ20
V
AC (f>1 Hz)
ρ30
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
710
mJ
IAR
Avalanche Current
(Note 1)
20
A
EAR
Repetitive Avalanche Energy
(Note 1)
1
mJ
dv/dt
Peak Diode Recovery dv/dt
15
V/ns
PD
Power Dissipation (TC = 25୅)
- Derate above 25୅
45
W
0.36
W
TJ, TSTG
Operating and Storage Temperature Range
-55 to +150
୅
TL
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
300
୅
ID
(Note 1)
* Drain current limited by maximum junction temperature
Thermal Resistance Characteristics
Symbol
Parameter
Typ.
Max.
RșJC
Junction-to-Case
--
2.8
RșJA
Junction-to-Ambient
--
60.5
Units
୅/W
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝;ΒΣΔΙ͑ͣͦ͑͢͡
HCS65R180S
March 2015
Symbol
Parameter
unless otherwise specified
Test Conditions
Min
Typ
Max
Units
On Characteristics
VGS
RDS(ON)
Gate Threshold Voltage
VDS = VGS, ID = 250 Ꮃ
2.8
--
4.2
V
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 10 A
--
0.15
0.18
Ÿ
VGS = 0 V, ID = 250 Ꮃ
650
--
--
V
VDS = 650 V, VGS = 0 V
--
--
10
Ꮃ
VDS = 520 V, TJ = 125୅
--
--
100
Ꮃ
VGS = ρ20 V, VDS = 0 V
--
--
ρ100
Ꮂ
--
1850
--
Ꮔ
--
500
--
Ꮔ
--
9
--
Ꮔ
--
0.54
--
Ÿ
--
45
--
Ꭸ
--
40
--
Ꭸ
--
140
--
Ꭸ
--
25
--
Ꭸ
--
46
--
nC
--
12
--
nC
--
16
--
nC
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Body Leakage Current
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
VGS = 0 V, VDS = 0 V, f = 1MHz
Switching Characteristics
td(on)
Turn-On Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDS = 325 V, ID = 20 A,
RG = 25 Ÿ
VDS = 520 V, ID = 20 A
VGS = 10 V
Source-Drain Diode Maximum Ratings and Characteristics
IS
Continuous Source-Drain Diode Forward Current
--
--
20
ISM
Pulsed Source-Drain Diode Forward Current
--
--
60
VSD
Source-Drain Diode Forward Voltage
IS = 20 A, VGS = 0 V
--
--
1.2
V
trr
Reverse Recovery Time
--
330
--
Ꭸ
Qrr
Reverse Recovery Charge
IS = 10 A, VGS = 0 V
diF/dt = 100 A/ȝV
--
3.8
--
ȝ&
A
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. IAS=6A, VDD=50V, RG=25:, Starting TJ =25qC
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝;ΒΣΔΙ͑ͣͦ͑͢͡
HCS65R180S
Electrical Characteristics TJ=25 qC
HCS65R180S
Typical Characteristics
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
101
ID, Drain Current [A]
ID, Drain Current [A]
Top :
10
25oC
150oC
* Notes :
1. 300us Pulse Test
2. TC = 25oC
100
-25oC
* Notes :
1. VDS= 30V
2. 300us Pulse Test
0.1
100
2
101
4
6
8
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
IDR, Reverse Drain Current [A]
RDS(ON) [:],
Drain-Source On-Resistance
0.4
0.3
VGS = 10V
0.2
0.1
VGS = 20V
10
1
150oC
25oC
* Notes :
1. VGS= 0V
2. 300us Pulse Test
Note : TJ = 25oC
0.1
0.0
0.0
0
9
18
27
36
45
0.2
Capacitances [pF]
8000
0.8
1.0
Coss
6000
* Note ;
1. VGS = 0 V
2. f = 1 MHz
4000
Ciss
2000
VDS = 130V
VDS = 325V
10
VDS = 520V
8
6
4
2
Crss
0
10-1
1.2
12
VGS, Gate-Source Voltage [V]
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
10000
0.6
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
12000
0.4
VSD, Source-Drain Voltage [V]
ID, Drain Current [A]
Note : ID = 20A
0
100
101
0
10
20
30
40
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
50
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝;ΒΣΔΙ͑ͣͦ͑͢͡
(continued)
3.0
RDS(ON), (Normalized)
Drain-Source On-Resistance
1.2
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
HCS65R180S
Typical Characteristics
1.1
1.0
0.9
Note :
1. VGS = 0 V
2. ID = 250PA
0.8
-100
-50
0
50
100
150
2.5
2.0
1.5
1.0
Note :
1. VGS = 10 V
2. ID = 10 A
0.5
0.0
-100
200
-50
0
200
10 Ps
100 Ps
1 ms
10 ms
100 ms
DC
100
15
ID, Drain Current [A]
101
* Notes :
1. TC = 25 oC
10
5
o
2. TJ = 150 C
3. Single Pulse
10-2
10-1
100
101
102
0
25
103
50
75
100
125
150
TC, Case Temperature [oC]
VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs Case Temperature
D=0.5
ZTJC(t), Thermal Response
ID, Drain Current [A]
150
20
Operation in This Area
is Limited by R DS(on)
10-1
100
Figure 8. On-Resistance Variation
vs Temperature
Figure 7. Breakdown Voltage Variation
vs Temperature
102
50
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
100
0.2
* Notes :
1. ZTJC(t) = 2.8 oC/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * ZTJC(t)
0.1
0.05
10-1
0.02
PDM
0.01
t1
single pulse
-2
10
10-5
10-4
10-3
10-2
10-1
t2
100
101
t1, Square Wave Pulse Duration [sec]
Figure 11. Transient Thermal Response Curve
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝;ΒΣΔΙ͑ͣͦ͑͢͡
HCS65R180S
Fig 12. Gate Charge Test Circuit & Waveform
.ȍ
12V
VGS
Same Type
as DUT
Qg
200nF
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Fig 13. Resistive Switching Test Circuit & Waveforms
RL
VDS
VDS
90%
VDD
RG
( 0.5 rated VDS )
Vin
DUT
10V
10%
tr
td(on)
td(off)
t on
tf
t off
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- LL IAS2 -------------------2
BVDSS -- VDD
L
VDS
VDD
ID
BVDSS
IAS
RG
10V
ID (t)
DUT
VDS (t)
VDD
tp
Time
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝;ΒΣΔΙ͑ͣͦ͑͢͡
HCS65R180S
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
IS
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• IS controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
IS
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
Vf
VDD
Body Diode
Forward Voltage Drop
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝;ΒΣΔΙ͑ͣͦ͑͢͡
HCS65R180S
Package Dimension
{vTYYWmGOhPG
±0.20
±0.20
2.54±0.20
0.70±0.20
6.68±0.20
0
12.42±0.20
3.30±0.20
2.76±0.20
1.47max
9.75±0.20
15.87±0.20
±
ij
.20
0.80±0.20
0.50±0.20
2.54typ
2.54typ
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝;ΒΣΔΙ͑ͣͦ͑͢͡
HCS65R180S
Package Dimension
{vTYYWmGOiPG
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝;ΒΣΔΙ͑ͣͦ͑͢͡