DCR2720V52 Phase Control Thyristor Preliminary Information DS5804-2 November 2010 (LN27693) FEATURES KEY PARAMETERS Double Side Cooling High Surge Capability VDRM IT(AV) ITSM dV/dt* dI/dt APPLICATIONS 5200V 2720A 36700A 1500V/µs 300A/µs * Higher dV/dt selections available High Power Drives High Voltage Power Supplies Static Switches VOLTAGE RATINGS Part and Ordering Number DCR2720V52* DCR2720V50 DCR2720V48 Repetitive Peak Voltages VDRM and VRRM V 5200 5000 4800 Conditions Tvj = -40°C to 125°C, IDRM = IRRM = 200mA, VDRM, VRRM tp = 10ms, VDSM & VRSM = VDRM & VRRM + 100V respectively Lower voltage grades available. 0 0 * 5000V @ -40 C, 5200V @ 0 C ORDERING INFORMATION When ordering, select the required part number shown in the Voltage Ratings selection table. For example: DCR2720V52 Outline type code: V (See Package Details for further information) Fig. 1 Package outline Note: Please use the complete part number when ordering and quote this number in any future correspondence relating to your order. 1/10 www.dynexsemi.com DCR2720V52 SEMICONDUCTOR CURRENT RATINGS Tcase = 60°C unless stated otherwise Symbol Parameter Test Conditions Max. Units 2720 A Double Side Cooled IT(AV) Mean on-state current IT(RMS) RMS value - 4270 A Continuous (direct) on-state current - 4120 A IT Half wave resistive load SURGE RATINGS Symbol ITSM 2 It Parameter Surge (non-repetitive) on-state current Test Conditions Max. Units 10ms half sine, Tcase = 125°C 36.7 kA VR = 0 6.73 MA s Min. Max. Units 2 I t for fusing 2 THERMAL AND MECHANICAL RATINGS Symbol Rth(j-c) Rth(c-h) Parameter Thermal resistance – junction to case Thermal resistance – case to heatsink Test Conditions Double side cooled DC - 0.00746 °C/W Single side cooled Anode DC - 0.0130 °C/W Cathode DC - 0.0178 °C/W Double side - 0.002 °C/W - 0.004 °C/W - 125 °C Clamping force 54kN (with mounting compound) Blocking VDRM / VRRM Single side Tvj Virtual junction temperature Tstg Storage temperature range -55 125 °C Fm Clamping force 48.0 59.0 kN 2/10 www.dynexsemi.com DCR2720V52 SEMICONDUCTOR DYNAMIC CHARACTERISTICS Symbol IRRM/IDRM Parameter Test Conditions Min. Max. Units Peak reverse and off-state current At VRRM/VDRM, Tcase = 125°C - 200 mA dV/dt Max. linear rate of rise of off-state voltage To 67% VDRM, Tj = 125°C, gate open - 1500 V/µs dI/dt Rate of rise of on-state current From 67% VDRM to 2x IT(AV) Repetitive 50Hz - 150 A/µs Gate source 30V, 10, Non-repetitive - 300 A/µs tr < 0.5µs, Tj = 125°C VT(TO) rT tgd Threshold voltage – Low level 500A to 2000A at Tcase = 125°C - 0.90 V Threshold voltage – High level 2000A to 7200A at Tcase = 125°C - 1.1 V On-state slope resistance – Low level 500A to 2000A at Tcase = 125°C - 0.3428 m On-state slope resistance – High level 2000A to 7200A at Tcase = 125°C - 0.2414 m VD = 67% VDRM, gate source 30V, 10 - 3 µs - 600 µs 2000 4750 µC Delay time tr = 0.5µs, Tj = 25°C tq Turn-off time Tj = 125°C, VR = 200V, dI/dt = 1A/µs, dVDR/dt = 20V/µs linear QS Stored charge IT = 2000A, Tj = 125°C, dI/dt – 1A/µs, IL Latching current Tj = 25°C, VD = 5V - 3 A IH Holding current Tj = 25°C, RG-K = , ITM = 500A, IT = 5A - 300 mA 3/10 www.dynexsemi.com DCR2720V52 SEMICONDUCTOR GATE TRIGGER CHARACTERISTICS AND RATINGS Symbol Parameter Test Conditions Max. Units VGT Gate trigger voltage VDRM = 5V, Tcase = 25°C 1.5 V VGD Gate non-trigger voltage At 50% VDRM, Tcase = 125°C 0.4 V IGT Gate trigger current VDRM = 5V, Tcase = 25°C 250 mA IGD Gate non-trigger current At 50% VDRM, Tcase = 125°C 15 mA CURVES Instantaneous on-state current IT - (A) 7000 6000 5000 4000 3000 2000 min 125°C max 125°C min 25°C max 25°C 1000 0 0.6 1.0 1.4 1.8 2.2 2.6 3.0 Instantaneous on-state voltage VT - (V) Fig.2 Maximum & minimum on-state characteristics VTM EQUATION VTM = A + Bln (IT) + C.IT+D.IT Where A = - 0.450546 B = 0.251217 C = 0.000242 D = - 0.008134 these values are valid for Tj = 125°C for IT 500A to 7200A 4/10 www.dynexsemi.com DCR2720V52 130 10 120 180 110 120 9 8 7 6 5 4 180 3 120 90 2 60 1 case ( oC ) 11 100 Maximum case temperature, T Mean power dissipation - (kW) SEMICONDUCTOR 90 60 30 80 70 60 50 40 30 20 10 30 0 0 0 1000 2000 3000 4000 0 1000 2000 3000 4000 Mean on-state current, IT(AV) - (A) Mean on-state current, IT(AV) - (A) Fig.3 On-state power dissipation – sine wave Fig.4 Maximum permissible case temperature, double side cooled – sine wave 130 180 120 110 100 120 12 90 11 Mean power dissipation - (kW) Maximum heatsink temperature, T Heatsink - ( oC ) 90 60 90 30 80 70 60 50 40 30 20 10 10 9 8 7 6 d.c. 5 180 4 120 90 3 60 2 30 1 0 0 0 1000 2000 3000 4000 Mean on-state current, IT(AV) - (A) Fig.5 Maximum permissible heatsink temperature, double side cooled – sine wave 0 1000 2000 3000 4000 5000 Mean on-state current, IT(AV) - (A) Fig.6 On-state power dissipation – rectangular wave 5/10 www.dynexsemi.com DCR2720V52 SEMICONDUCTOR 130 d.c. 120 180 110 120 100 90 90 60 80 30 70 60 50 40 30 20 10 Maximum heatsik temperature Theatsink - (oC) Maximum permissible case temperature , Tcase - (°C) 130 0 d.c. 120 180 110 120 100 90 90 60 80 30 70 60 50 40 30 20 10 0 0 1000 2000 3000 4000 5000 6000 0 Mean on-state current, IT(AV) - (A) Fig.7 Maximum permissible case temperature, double side cooled – rectangular wave 1000 2000 Double side cooled 18 Anode side cooled Thermal Impedance , Z th(j-c) - ( °C/kW) 14 Anode Side Cooling 12 Cathode Sided Cooling 5000 2 1.8299 3 3.4022 4 1.3044 0.0076807 0.0579454 0.4078613 1.2085 0.9032 1.6719 3.0101 7.4269 0.0075871 0.0536531 0.3144537 5.624 0.9478 2.0661 1.6884 13.0847 0.0078442 0.0645541 0.3894389 4.1447 Ri (°C/kW) Ti (s) Cathode side cooled 1 0.9206 Ri (°C/kW) Ti (s) 16 4000 Fig.8 Maximum permissible heatsink temperature, double side cooled – rectangular wave 20 Double Side Cooling 3000 Mean on-state current, IT(AV) - (A) Ri (°C/kW) Ti (s) Rth(j-c) Conduction 10 Tables show the increments of thermal resistance R th(j-c) when the device operates at conduction angles other than d.c. 8 Double side cooling Zth (z) 6 ° 180 120 90 60 30 15 4 2 sine. 1.34 1.57 1.83 2.08 2.27 2.36 rect. 0.88 1.30 1.54 1.81 2.11 2.28 Anode Side Cooling Zth (z) ° 180 120 90 60 30 15 sine. 1.34 1.57 1.84 2.08 2.28 2.37 rect. 0.88 1.30 1.54 1.81 2.11 2.28 Cathode Sided Cooling Zth (z) ° 180 120 90 60 30 15 sine. 1.33 1.57 1.83 2.07 2.26 2.35 rect. 0.88 1.29 1.53 1.80 2.10 2.26 0 0.001 0.1 10 Time ( s ) Fig.9 Maximum (limit) transient thermal impedance – junction to case (°C/kW) 6/10 www.dynexsemi.com DCR2720V52 SEMICONDUCTOR Fig.10 Multi-cycle surge current Fig.11 Single-cycle surge current 600 20000 Reverse recovery current. IRR - (A) QSmax = 4737.8*(di/dt)0.4604 18000 Stored Charge, QS - (uC) 16000 QSmin = 2053.4*(di/dt)0.5824 14000 12000 10000 8000 6000 Conditions: Tj = 125oC, VRpeak ~ 3100V VRM ~ 2100V snubber as appopriate to control reverse volts 4000 2000 500 IRRmax = 58.357*(di/dt)0.7168 400 300 IRRmin =37.083*(di/dt)0.7817 200 Conditions: Tj = 125oC, VRpeak ~ 3100V VRM ~ 2100V snubber as appropriate to control reverse volts 100 0 0 0 5 10 15 20 Rate of decay of on-state current, di/dt - (A/us) Fig.12 Stored charge 25 0 5 10 15 20 25 Rate of decay of on-state current, di/dt - (A/us) Fig.13 Reverse recovery current 7/10 www.dynexsemi.com DCR2720V52 SEMICONDUCTOR 10 Gate trigger voltage, VGT - (V) 9 Pulse Width us 100 200 500 1000 10000 8 7 Pulse Power PGM (Watts) Frequency Hz 50 100 150 150 150 150 150 150 150 100 20 - 400 150 125 100 25 - Upper Limit 6 5 Preferred gate drive area 4 3 2 Tj = -40oC Tj = 25oC Lower Limit Tj = 125oC 1 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 Gate trigger current IGT, - (A) Fig14 Gate Characteristics 30 Lower Limit Upper Limit 5W 10W 20W 50W 100W 150W -40C Gate trigger voltage, VGT - (V) 25 20 15 10 5 0 0 1 2 3 4 5 6 7 8 9 10 Gate trigger current, IGT - (A) Fig. 15 Gate characteristics 8/10 www.dynexsemi.com DCR2720V52 SEMICONDUCTOR PACKAGE DETAILS For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 3rd ANGLE PROJECTION DO NOT SCALE IF IN DOUBT ASK HOLE Ø3.60 X 2.00 DEEP (IN BOTH ELECTRODES) 20° OFFSET (NOM.) TO GATE TUBE Device DCR1474SV18 DCR1475SV28 DCR1476SV42 DCR1478SV48 DCR1574SV28 DCR1575SV42 DCR1576SV52 DCR4060V22 DCR3780V28 DCR3030V42 DCR2720V52 DCR2290V65 DCR1910V85 Maximum Minimum Thickness Thickness (mm) (mm) 27.265 26.515 27.34 26.59 27.57 26.82 27.69 26.94 27.34 26.59 27.57 26.82 27.69 26.94 27.265 26.515 27.34 26.59 27.57 26.82 27.69 26.94 27.95 27.2 28.31 27.56 Ø110.0 MAX. Ø73.0 NOM. Ø1.5 CATHODE GATE ANODE Ø73.0 NOM. FOR PACKAGE HEIGHT SEE TABLE NOMINAL WEIGHT 1160g Lead length: 420mm Lead terminal connector: M4 ring Package outline type code: V Fig.16 Package outline 9/10 www.dynexsemi.com DCR2720V52 SEMICONDUCTOR IMPORTANT INFORMATION: This publication is provided for information only and not for resale. The products and information in this publication are intended for use by appropriately trained technical personnel. Due to the diversity of product applications, the information contained herein is provided as a general guide only and does not constitute any guarantee of suitability for use in a specific application.The user must evaluate the suitability of the product and the completeness of the product data for the application. The user is responsible for product selection and ensuring all safety and any warning requirements are met. Should additional product information be needed please contact Customer Service. Although we have endeavoured to carefully compile the information in this publication it may contain inaccuracies or typographical errors. The information is provided without any warranty or guarantee of any kind. This publication is an uncontrolled document and is subject to change without notice. When referring to it please ensure that it is the most up to date version and has not been superseded. The products are not intended for use in applications where a failure or malfunction may cause loss of life, injury or damage to property. The user must ensure that appropriate safety precautions are taken to prevent or mitigate the consequences of a product failure or malfunction. The products must not be touched when operating because there is a danger of electrocution or severe burning. Always use protective safety equipment such as appropriate shields for the product and wear safety glasses. Even when disconnected any electric charge remaining in the product must be discharged and allowed to cool before safe handling using protective gloves. Extended exposure to conditions outside the product ratings may affect reliability leading to premature product failure. Use outside the product ratings is likely to cause permanent damage to the product. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture, a large current to flow or high voltage arcing, resulting in fire or explosion. Appropriate application design and safety precautions should always be followed to protect persons and property. Product Status & Product Ordering: We annotate datasheets in the top right hand corner of the front page, to indicate product status if it is not yet fully approved for production. The annotations are as follows:Target Information: Preliminary Information: No Annotation: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. The product design is complete and final characterisation for volume production is in progress.The datasheet represents the product as it is now understood but details may change. 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