IPB180N04S4-H0 OptiMOS®-T2 Power-Transistor Product Summary V DS 40 V R DS(on) 1.1 mΩ ID 180 A Features • N-channel - Enhancement mode PG-TO263-7-3 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • Ultra low Rds(on) • 100% Avalanche tested Type Package Marking IPB180N04S4-H0 PG-TO263-7-3 4N04H0 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID Conditions T C=25°C, V GS=10V1) T C=100 °C, V GS=10 V2) Value 180 Unit A 180 Pulsed drain current2) I D,pulse T C=25 °C 720 Avalanche energy, single pulse E AS I D=90 A 850 mJ Avalanche current, single pulse I AS - 180 A Gate source voltage V GS - ±20 V Power dissipation P tot T C=25 °C 250 W Operating and storage temperature T j, T stg - -55 ... +175 °C IEC climatic category; DIN IEC 68-1 - - 55/175/56 Rev. 1.0 page 1 2010-04-13 IPB180N04S4-H0 Parameter Symbol Values Conditions Unit min. typ. max. Thermal characteristics2) Thermal resistance, junction - case R thJC - - - 0.6 SMD version, device on PCB R thJA minimal footprint - - 62 6 cm2 cooling area3) - - 40 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D= 1 mA 40 - - Gate threshold voltage V GS(th) V DS=V GS, I D=180 µA 2.0 3.0 4.0 Zero gate voltage drain current I DSS V DS=40 V, V GS=0 V, T j=25 °C - 0.08 1 - 1 20 V DS=18 V, V GS=0 V, T j=85 °C2) V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 100 nA Drain-source on-state resistance RDS(on) V GS=10 V, I D=100 A - 0.9 1.1 mΩ Rev. 1.0 page 2 2010-04-13 IPB180N04S4-H0 Parameter Symbol Values Conditions Unit min. typ. max. - 13800 17940 pF - 3000 3900 Dynamic characteristics2) Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 100 230 Turn-on delay time t d(on) - 44 - Rise time tr - 24 - Turn-off delay time t d(off) - 50 - Fall time tf - 49 - Gate to source charge Q gs - 71 92 Gate to drain charge Q gd - 23 53 Gate charge total Qg - 173 225 Gate plateau voltage V plateau - 5.0 - V - - 180 A - - 720 - 0.9 1.3 V - 73 - ns - 108 - nC V GS=0 V, V DS=25 V, f =1 MHz V DD=20 V, V GS=10 V, I D=180 A, R G=3.5 Ω ns Gate Charge Characteristics2) V DD=32 V, I D=180 A, V GS=0 to 10 V nC Reverse Diode Diode continous forward current2) IS Diode pulse current2) I S,pulse Diode forward voltage V SD Reverse recovery time2) t rr Reverse recovery charge2) Q rr T C=25 °C V GS=0 V, I F=100 A, T j=25 °C V R=20 V, I F=50A, di F/dt =100 A/µs 1) Current is limited by bondwire; with an R thJC = 0.6 K/W the chip is able to carry 367A at 25°C. 2) Defined by design. Not subject to production test. 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.0 page 3 2010-04-13 IPB180N04S4-H0 1 Power dissipation 2 Drain current P tot = f(T C); V GS ≥ 6 V I D = f(T C); V GS ≥ 6 V 300 200 250 160 200 I D [A] P tot [W] 120 150 80 100 40 50 0 0 0 50 100 150 200 0 50 100 T C [°C] 150 200 T C [°C] 3 Safe operating area 4 Max. transient thermal impedance I D = f(V DS); T C = 25 °C; D = 0 Z thJC = f(t p) parameter: t p parameter: D =t p/T 1000 100 1 µs 10 µs 0.5 100 µs 1 ms 10-1 I D [A] Z thJC [K/W] 100 0.05 0.01 10-2 10 single pulse 10-3 1 0.1 1 10 100 10-6 10-5 10-4 10-3 10-2 10-1 100 t p [s] V DS [V] Rev. 1.0 0.1 page 4 2010-04-13 IPB180N04S4-H0 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D = f(V DS); T j = 25 °C R DS(on) = (I D); T j = 25 °C parameter: V GS parameter: V GS 10 720 10 V 7V 6.5 V 630 8 540 6V R DS(on) [mΩ] I D [A] 450 360 270 6 4 6V 5.5 V 5.5 V 6.5 V 180 2 7V 5V 90 10 V 0 0 0 2 4 0 6 100 200 V DS [V] 300 400 500 600 I D [A] 7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance I D = f(V GS); V DS = 6V R DS(on) = f(T j); I D = 100 A; V GS = 10 V parameter: T j 1.75 720 630 1.5 540 R DS(on) [mΩ] I D [A] 450 360 270 1.25 1 175 °C 180 0.75 25 °C 90 -55 °C 0.5 0 2 3 4 5 6 7 8 -20 20 60 100 140 180 T j [°C] V GS [V] Rev. 1.0 -60 page 5 2010-04-13 IPB180N04S4-H0 9 Typ. gate threshold voltage 10 Typ. capacitances V GS(th) = f(T j); V GS = V DS C = f(V DS); V GS = 0 V; f = 1 MHz parameter: I D 105 4 3.5 Ciss 104 Coss 900 µA C [pF] V GS(th) [V] 3 180 µA 2.5 103 2 Crss 2 10 1.5 101 1 -60 -20 20 60 100 140 0 180 5 10 T j [°C] 15 20 30 V DS [V] 11 Typical forward diode characteristicis 12 Typ. avalanche characteristics IF = f(VSD) I AS = f(t AV) parameter: T j parameter: T j(start) 103 1000 102 100 25 °C 150 °C I AV [A] I F [A] 100 °C 175 °C 25 °C 101 10 100 1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 V SD [V] Rev. 1.0 25 1 10 100 1000 t AV [µs] page 6 2010-04-13 IPB180N04S4-H0 13 Typical avalanche energy 14 Drain-source breakdown voltage E AS = f(T j) V BR(DSS) = f(T j); I D = 1 mA parameter: I D 44 2000 45 A 1500 V BR(DSS) [V] E AS [mJ] 42 1000 90 A 40 500 180 A 38 0 25 75 125 -60 175 -20 20 60 100 140 180 T j [°C] T j [°C] 15 Typ. gate charge 16 Gate charge waveforms V GS = f(Q gate); I D = 180 A pulsed parameter: V DD 12 V GS 10 Qg 8V 32 V V GS [V] 8 6 4 Q gate 2 Q gs Q gd 0 0 40 80 120 160 200 Q gate [nC] Rev. 1.0 page 7 2010-04-13 IPB180N04S4-H0 Published by Infineon Technologies AG 81726 Munich, Germany © Infineon Technologies AG 2010 All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 8 2010-04-13 IPB180N04S4-H0 Revision History Version Date Changes Revision 1.0 Rev. 1.0 13.04.2010 Final Data Sheet page 9 2010-04-13