Infineon HYS64V16200GDL-8 144 pin so-dimm sdram module Datasheet

144 pin SO-DIMM SDRAM Modules
HYS64V16200GDL
HYS64V32220GDL
128MB & 256 MB PC100 / PC133
•
144 Pin Eight Byte Small Outline Dual-In-Line Synchronous DRAM Modules
for PC100 and PC133 notebook applications
•
One bank 16M x 64 (128MByte) and two banks 32M x 64 (256 MByte)
non-parity module organisation
•
Performance:
-7
-7.5
-8
PC133
2-2-2
PC133
3-3-3
PC100
2-2-2
Units
fCK
Clock frequency (max.)
133
133
100
MHz
tAC
Clock access time
5.4
5.4
6
ns
•
Single +3.3V(± 0.3V ) power supply
•
Programmable CAS Latency, Burst Length and Wrap Sequence
(Sequential & Interleave)
•
Auto Refresh (CBR) and Self Refresh
•
Decoupling capacitors mounted on substrate
•
All inputs, outputs are LVTTL compatible
•
Serial Presence Detect with E2PROM
•
256Mbit SDRAM low power components in TSOP54 packages with 16M x 16 organisation
•
8192 refresh cycles every 64 ms
•
Gold contact pad, JEDEC MO-190 outline dimensions
•
This module family is fully compliant with the latest INTEL SO-DIMM layout and electrical
specifications
•
All PC133 modules are fully backward compatible to PC100-222 operation
•
Importante Notice:
These SO-DIMM modules are based on 256Mbit SDRAM technology and can be
used in applications only, where 256Mbit addressing is supported.
INFINEON Technologies
1
9.01
HYS64V16200GDL/HYS64V32220GDL
144 pin SO-DIMM SDRAM Modules
This INFINEON modules are industry standard 144 pin 8-byte Synchronous DRAM (SDRAM) Small
Outline Dual In-line Memory Modules (SO-DIMM) which are organised as x64 high speed memory
arrays designed for use in non-parity applications. These SO-DIMMs use 256Mbit SDRAMs in
TSOPII packages. Decoupling capacitors are mounted on the board.
The DIMMs use serial presence detects implemented via a serial E2PROM using the two pin I2C
protocol. The first 128 bytes are utilized by the DIMM manufacturer and the second 128 bytes are
available to the end user.
All INFINEON 144-pin SO-DIMMs provide a high performance, flexible 8-byte interface in a 67,6
mm long footprint.
Product Spectrum:
Speed
HYS64V16200GDL-7
HYS64V16200GDL-7.5
HYS64V16200GDL-8
HYS64V32220GDL-7
HYS64V32220GDL-7.5
32M x 64
HYS64V32220GDL-8
16M x 64
SDRAMs
used
PC133-222
PC133-333 4 16Mx16
PC100-222
PC133-222
PC133-333 8 16Mx16
PC100-222
RowAddr.
Bank
Select
13
BA0, BA1
Column Refresh
Addr.
Period
8k
9
7,8 µs
Note: All partnumbers end with a place code, designating the die revision. Example: HYS64V32220GDL-8-C2,
indicating Rev.C2 dies are used for SDRAM components.
Card Dimensions:
Organisation
16M x 64
32M x 64
PCB-Board
INTEL Rev. 1.0/1.2
L x H x T [mm]
67.60 x 25.40 x 3.80
67.60 x 31.75 x 3.80
Pin Names
A0-A12
Address Inputs
DQMB0 -DQMB7
Data Mask
BA0,BA1
Bank Selects
CS0, CS1 *)
Chip Select
DQ0 - DQ63
Data Input/Output
Vcc
Power (+3.3 Volt)
RAS
Row Address Strobe
Vss
Ground
CAS
Column Address Strobe
SCL
Clock for Presence Detect
WE
Read / Write Input
SDA
Serial Data Out for Presence Detect
CKE0, CKE1
Clock Enable
N.C.
No Connection
CLK0, CLK1 *)
Clock Input
*) CS1 and CKE1 on two bank modules only
INFINEON Technologies
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9.01
HYS64V16200GDL/HYS64V32220GDL
144 pin SO-DIMM SDRAM Modules
Pin Configuration
Front
Side
PIN #
Back
Side
PIN #
Front
Side
PIN #
Back
Side
PIN #
1
VSS
2
VSS
73
NC
74
3
DQ0
4
DQ32
75
Vss
76
CLK1
Vss
5
DQ1
6
DQ33
77
NC
78
NC
7
DQ2
8
DQ34
79
NC
80
NC
9
DQ3
10
DQ35
81
Vcc
82
Vcc
11
VCC
12
Vcc
83
DQ16
84
DQ48
13
DQ4
14
DQ36
85
DQ17
86
DQ49
15
DQ5
16
DQ37
87
DQ18
88
DQ50
17
DQ6
18
DQ38
89
DQ19
90
DQ51
19
DQ7
20
DQ39
91
Vss
92
Vss
21
Vss
22
Vss
93
DQ20
94
DQ52
23
DQMB0
24
DQMB4
95
DQ21
96
DQ53
25
DQMB1
26
DQMB5
97
DQ22
98
DQ54
27
Vcc
28
Vcc
99
DQ23
100
DQ55
29
A0
30
A3
101
Vcc
102
Vcc
31
A1
32
A4
103
A6
104
A7
33
A2
34
A5
105
A8
106
BA0
35
Vss
36
Vss
107
Vss
108
Vss
37
DQ8
38
DQ40
109
A9
110
BA1
39
DQ9
40
DQ41
111
A10
112
A11
41
DQ10
42
DQ42
113
Vcc
114
Vcc
43
DQ11
44
DQ43
115
DQMB2
116
DQMB6
45
Vcc
46
Vcc
117
DQMB3
118
DQMB7
47
DQ12
48
DQ44
119
Vss
120
Vss
49
DQ13
50
DQ45
121
DQ24
122
DQ56
51
DQ14
52
DQ46
123
DQ25
124
DQ57
53
DQ15
54
DQ47
125
DQ26
126
DQ58
55
Vss
56
Vss
127
DQ27
128
DQ59
57
NC
58
NC
129
Vcc
130
Vcc
59
NC
60
NC
131
DQ28
132
DQ60
61
CLK0
62
CKE0
133
DQ29
134
DQ61
63
Vcc
64
Vcc
135
DQ30
136
DQ62
65
RAS
66
CAS
137
DQ31
138
DQ63
67
WE
68
CKE1
139
Vss
140
Vss
69
CS0
70
A12
141
SDA
142
SCL
71
CS1
72
N.C
143
Vcc
144
Vcc
INFINEON Technologies
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9.01
HYS64V16200GDL/HYS64V32220GDL
144 pin SO-DIMM SDRAM Modules
WE
CS0
WE
CS
LDQM
DQ0-DQ7
DQMB0
DQ0-DQ7
DQMB1
DQ8-DQ15
DQMB4
DQ32-DQ39
DQMB5
DQ40-DQ47
UDQM
DQ8-DQ15
D0
WE
CS
LDQM
DQ0-DQ7
DQMB2
DQ16-DQ23
DQMB3
DQ24-DQ31
DQMB6
DQ48-DQ55
DQMB7
DQ56-DQ63
UDQM
DQ8-DQ15
D1
A0-A12, BA0, BA1
D0-D3
VC C
D0-D3
D0-D3
RAS
D0-D3
CAS
D0-D3
CKE0
D0-D3
CLK0
4 SDRAM
UDQM
DQ8-DQ15
D2
WE
CS
LDQM
DQ0-DQ7
UDQM
DQ8-DQ15
D3
E 2 PROM
(256 word x 8 Bit)
C 1 -C 4
VSS
WE
CS
LDQM
DQ0-DQ7
SA0
SA1
SA2
SCL
SDA
Note: All resistors are 10 Ω
CLK1
10 pF
SPB04133_256Mb
Block Diagram for one bank 16M x 64 (128MByte) SDRAM SO- DIMM - Module
INFINEON Technologies
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9.01
HYS64V16200GDL/HYS64V32220GDL
144 pin SO-DIMM SDRAM Modules
WE
CS0
CS1
DQMB0
DQ0-DQ7
DQMB1
DQ8-DQ15
DQMB2
DQ16-DQ23
DQMB3
DQ24-DQ31
CS
WE
LDQM
DQ0-DQ7
CS
WE
LDQM
DQ0-DQ7
UDQM
DQ8-DQ15
D0
UDQM
DQ8-DQ15
D4
CS
WE
LDQM
DQ0-DQ7
CS
WE
LDQM
DQ0-DQ7
UDQM
DQ8-DQ15
D1
UDQM
DQ8-DQ15
D5
A0-A12, BA0, BA1
D0-D7
VC C
D0-D7
DQMB4
DQ32-DQ39
DQMB5
DQ40-DQ47
DQMB6
DQ48-DQ55
DQMB7
DQ56-DQ63
D0-D7
RAS
D0-D7
CAS
D0-D7
CKE0
D0-D3
CKE1
D4-D7
CLK0
D0-D3
CLK1
D4-D7
CS
WE
LDQM
DQ0-DQ7
UDQM
DQ8-DQ15
D2
UDQM
DQ8-DQ15
D6
CS
WE
LDQM
DQ0-DQ7
CS
WE
LDQM
DQ0-DQ7
UDQM
DQ8-DQ15
D3
UDQM
DQ8-DQ15
D7
E 2 PROM
(256 word x 8 Bit)
C
VS S
CS
WE
LDQM
DQ0-DQ7
SA0
SA1
SA2
SCL
SDA
Note: All resistors are 10 Ω
SPB04134_256M
Block Diagram for two bank 32M x 64 (256MByte) SDRAM SO- DIMM - Module
INFINEON Technologies
5
9.01
HYS64V16200GDL/HYS64V32220GDL
144 pin SO-DIMM SDRAM Modules
Absolute Maximum Ratings
Parameter
Symbol
Limit Values
min.
max.
Unit
Input / Output voltage relative to VSS
VIN, VOUT
– 1.0
4.6
V
Power supply voltage on VDD
VDD
– 1.0
4.6
V
Storage temperature range
T STG
-55
+150
oC
Power dissipation (per SDRAM component)
PD
–
1
W
Data out current (short circuit)
IOS
–
50
mA
Permanent device damage may occur if “Absolute Maximum Ratings” are exceeded.
Functional operation should be restricted to recommended operation conditions.
Exposure to higher than recommended voltage for extended periods of time affect device reliability
DC Characteristics
TA = 0 to 70 oC; VSS = 0 V; VDD = 3.3 V ± 0.3 V
Parameter
Symbol
Limit Values
min.
max.
Unit
Input high voltage
VIH
2.0
Vcc+0.3
Input low voltage
VIL
– 0.5
0.8
V
V
Output high voltage (I OUT = – 4.0 mA)
VOH
2.4
–
V
Output low voltage (IOUT = 4.0 mA)
VOL
–
0.4
V
Input leakage current, any input
(0 V < VIN < 3.6 V, all other inputs = 0 V)
I I(L)
– 20
20
mA
Output leakage current
(DQ is disabled, 0 V < VOUT < VDD)
I O(L)
– 20
20
mA
Capacitance
TA = 0 to 70 oC; VDD = 3.3 V ± 0.3 V, f = 1 MHz
Parameter
Symbol
Limit Values
Unit
16M x 64
max.
32M x 64
max.
Input capacitance (A0 to A11, BA0, BA1)
CI1
28
52
pF
Input capacitance (RAS, CAS, WE, CKE0)
CI2
25
46
pF
Input Capacitance (CLK0, CLK1)
CI3
35
35
pF
Input capacitance (CS0)
CI4
25
30
pF
Input capacitance (DQMB0-DQMB7)
CI5
10
15
pF
Input / Output capacitance (DQ0-DQ63)
CIO
12
18
pF
Input Capacitance (SCL,SA0-2)
Csc
8
8
pF
Input/Output Capacitance
Csd
10
10
pF
INFINEON Technologies
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9.01
HYS64V16200GDL/HYS64V32220GDL
144 pin SO-DIMM SDRAM Modules
Operating Currents per memory bank
(TA = 0 to 70 oC; VSS = 0 V; VDD = 3.3 V ± 0.3 V)
(Recommended Operating Conditions unless otherwise noted)
Parameter & Test Condition
Symb.
-7/-7.5
-8
ICC1
920
680
Note
OPERATING CURRENT
trc=trcmin.,
All banks operated in random access,
all banks operated in ping-pong manner
PRECHARGE STANDBY CURRENT in
Power Down Mode
CS =VIH (min.), CKE<=Vil(max)
tck = min.
ICC2P
PRECHARGE STANDBY CURRENT in
Non-Power Down Mode
CS = VIH (min.), CKE>=Vih(min)
tck = min.
ICC2N
160
NO OPERATING CURRENT
CKE>=VIH(min.)
ICC3N
200
tck = min., CS = VIH(min),
active state ( max. 4 banks)
CKE<=VIL(max.)
ICC3P
BURST OPERATING CURRENT
tck = min.,
Read command cycling
ICC4
AUTO REFRESH CURRENT
tck = min.,
Auto Refresh command cycling
ICC5
SELF REFRESH CURRENT
Self Refresh Mode, CKE=0.2V,
tck = infinity.
ICC6
8
mA
1
120
mA
1
180
mA
1
mA
1
mA
1,2
mA
1
mA
1
40
600
mA 1, 2
400
960
880
7.2
Notes:
1. These parameters depend on the cycle rate. These values are measured at 133 MHz for -7 & -7.5
and at 100 MHz for -8 modules. Input signals are changed once during tck.
2. These parameters are measured with continuous data stream during read access and all DQ toggling.
CL=3 and BL=4 is assumed and the data-out current is excluded.
INFINEON Technologies
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9.01
HYS64V16200GDL/HYS64V32220GDL
144 pin SO-DIMM SDRAM Modules
AC Characteristics 1)2)
(TA = 0 to 70 oC; VSS = 0 V; VDD = 3.3 V ± 0.3 V, tT = 1 ns)
Symbol
Parameter
Unit
Limit Values
-7
PC133-222
-7.5
PC133-333
-8
PC100-222
min.
max.
min.
max.
min.
max.
CAS Latency = 3 tCK
CAS Latency = 2
7.5
7.5
–
–
7.5
10
–
–
10
10
–
–
CAS Latency = 3 tCK
CAS Latency = 2
–
–
133
133
–
–
133
100
–
–
100
100
Access Time from Clock
CAS Latency = 3 tAC
CAS Latency = 2
–
–
5.4
5.4
–
–
5.4
6
–
–
6
6
ns
ns
–
2.5
–
3
–
ns
Clock and Access Time
Clock Cycle Time
ns
ns
Clock Frequency
MHz
MHz
2,
3
Clock High Pulse Width
tCH
2.5
Clock Low Pulse Width
tCL
2.5
–
2.5
–
3
–
ns
Transition time
tT
0.3
1.2
0.3
1.2
0.5
2
ns
Input Setup Time
tIS
1.5
–
1.5
–
2
–
ns
4
Input Hold Time
tIH
0.8
–
0.8
–
1
–
ns
4
Power Down Mode Entry time
tSB
Setup and Hold Paramters
–
1
–
1
–
1
CLK 4
Power Down Mode Exit Setup Time tPDE
1
–
1
–
1
–
CLK 4
tRSC
2
–
2
–
2
–
CLK
Row to Column Delay Time
tRCD
15
–
20
–
20
–
ns
5
Row Precharge Time
tRP
15
–
20
–
20
–
ns
5
Row Active Time
tRAS
42
100k
45
100k
50
100k
ns
5
Row Cycle Time
tRC
Mode Register Set-up time
Common Parameters
60
–
67
–
70
–
ns
5
Activate(a) to Activate(b) Command tRRD
period
14
–
15
–
16
–
ns
5
CAS(a) to CAS(b) Command period tCCD
1
–
1
–
1
–
CLK
INFINEON Technologies
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9.01
HYS64V16200GDL/HYS64V32220GDL
144 pin SO-DIMM SDRAM Modules
Parameter
Symbol
Unit
Limit Values
-7
PC133-222
-7.5
PC133-333
-8
PC100-222
min.
max.
min.
max.
min.
max.
Refresh Cycle
Refresh Period
(4096 cycles)
tREF
–
64
–
64
–
64
ms
Self Refresh Exit Time
tSREX
1
–
1
–
1
–
CLK 6
Data Out Hold Time
tOH
3
–
3
–
3
–
ns
Data Out to Low Impedance Time
tLZ
0
–
0
–
0
–
ns
Data Out to High Impedance Time
tHZ
3
7
3
7
3
8
ns
DQM Data Out Disable Latency
tDQZ
–
2
–
2
–
2
CLK
Data Input to Precharge
(write recovery)
tWR
2
–
2
–
2
–
CLK
DQM Write Mask Latency
tDQW
0
–
0
–
0
–
CLK
Read Cycle
7
Write Cycle
INFINEON Technologies
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9.01
HYS64V16200GDL/HYS64V32220GDL
144 pin SO-DIMM SDRAM Modules
Notes:
1. All AC characteristics shown are for SDRAM components.
An initial pause of 100 µ s is required after power-up, then a Precharge All Banks command must
be given followed by 8 Auto Refresh (CBR) cycles before the Mode Register Set Operation can
begin.
2. AC timing tests have Vil = 0.4 V and Vih = 2.4 V with the timing referenced to the 1.4 V crossover
point. The transition time is measured between Vih and V il. All AC measurements assume tT =1ns
with the AC output load circuit shownSpecified tac and toh parameters are measured with a 50
pF only, without any resistive termination and with a input signal of 1V / ns edge rate between
0.8V and 2.0 V.
.
t CH
2.4 V
0.4 V
1.4 V
CLOCK
t CL
t IS
tT
t IH
1.4 V
INPUT
tAC
t LZ
tAC
t OH
I/O
OUTPUT
1.4 V
50 pF
t HZ
Measurement conditions for
tac and toh
IO.vsd
3. If clock rising time is longer than 1ns, a time (tT -0.5) ns has to be added to this parameter.
4. If tT is longer than 1ns, a time (tT -1) ns has to be added to this parameter.
5. Any time that the refresh Period has been exceeded, a minimum of two Auto (CRB) Refresh
commands must be given to “wake-up“ the device.
6. Self Refresh Exit is a synchronous operation and begins on the 2nd positive clock edge after
CKE returns high. Self Refresh Exit is not complete until a time period equal to tRC is satisfied
once the Self Refresh Exit command is registered.
7. Referenced to the time which the output achieves the open circuit condition, not to output voltage
levels.
Serial Presence Detects:
A serial presence detect storage device - E2PROM - is assembled onto the module. Information
about the module configuration, speed, etc. is written into the E 2PROM device during module
production using a serial presence detect protocol ( I2C synchronous 2-wire bus)
INFINEON Technologies
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9.01
HYS64V16200GDL/HYS64V32220GDL
144 pin SO-DIMM SDRAM Modules
SPD-Table HYS64V16200GDL:
Byte#
Description
SPD Entry Value
Hex
16Mx64 16Mx64 16Mx64
-7
-7.5
-8
128
80
256
SDRAM
08
04
0
Number of SPD bytes
1
2
Total bytes in Serial PD
Memory Type
3
4
Number of Row Addresses
Number of Column Addresses
13
9
0D
09
5
6
Number of DIMM Banks
Module Data Width
1
64
01
40
7
8
Module Data Width (cont’d)
Module Interface Levels
0
LVTTL
00
01
9
SDRAM Cycle Time at CL=3
10
SDRAM Access time from Clock at CL=3
11
Dimm Config (Error Det/Corr.)
12
13
Refresh Rate/Type
SDRAM width, Primary
14
15
Error Checking SDRAM data width
Minimum clock delay for back-to-back random
column address
16
17
7.5 / 10.0 ns
75
75
5.4 / 6.0 ns
54
54
A0
60
none
00
Self-Refresh, 7.8 µs
x16
82
10
n/a
tccd = 1 CLK
00
01
Burst Length supported
Number of SDRAM banks
1, 2, 4 & 8
2
0F
04
18
19
Supported CAS Latencies
CS Latencies
2, & 3
CS latency = 0
06
01
20
21
WE Latencies
SDRAM DIMM module attributes
Write latency = 0
unbuffered
01
00
22
23
SDRAM Device Attributes :General
SDRAM Cycle Time at CL = 2
Vcc tol +/- 10%
7.5 / 10 ns
75
A0
24
25
SDRAM Access Time from Clock at CL=2
SDRAM Cycle Time at CL = 1
5.4 / 6.0 ns
not supported
54
00
60
FF
26
27
SDRAM Access Time from Clock at CL=1
Minimum Row Precharge Time
not supported
20 ns
00
0F
FF
14
28
29
Minimum Row Active to Row Active delay
Minimum RAS to CAS delay
15 / 16 ns
20 ns
0E
0F
0F
30
31
Minimum Ras pulse width
Module Bank Density (per bank)
42 / 45 / 60 ns
128MB
2A
2D
20
32
32
33
SDRAM input setup time
SDRAM input hold time
1.5 / 2 ns
0.8 / 1 ns
15
08
15
08
20
10
34
35
SDRAM data input setup time
SDRAM data input hold time
1.5 / 2 ns
0.8 / 1 ns
15
08
15
08
20
10
36-61
62
Superset information
SPD Revision
0E
00
Revision 1.2
63
Checksum for bytes 0 - 62
64-125 Manufactures’s information
FF
12
F4
39
126
127
Frequency Specification
Details
64
87
128+
Unused storage locations
FF
INFINEON Technologies
11
10
14
9C
9.01
HYS64V16200GDL/HYS64V32220GDL
144 pin SO-DIMM SDRAM Modules
SPD-Table HYS64V32220GDL:
Byte#
Description
SPD Entry Value
Hex
32Mx64 32Mx64 32Mx64
-7
-7.5
-8
128
80
256
SDRAM
08
04
0
Number of SPD bytes
1
2
Total bytes in Serial PD
Memory Type
3
4
Number of Row Addresses
Number of Column Addresses
13
9
0D
09
5
6
Number of DIMM Banks
Module Data Width
2
64
02
40
7
8
Module Data Width (cont’d)
Module Interface Levels
0
LVTTL
00
01
9
SDRAM Cycle Time at CL=3
10
SDRAM Access time from Clock at CL=3
11
Dimm Config (Error Det/Corr.)
12
13
Refresh Rate/Type
SDRAM width, Primary
14
15
Error Checking SDRAM data width
Minimum clock delay for back-to-back random
column address
16
17
7.5 / 10.0 ns
75
75
5.4 / 6.0 ns
54
54
A0
60
none
00
Self-Refresh, 7.8 µs
x16
82
10
n/a
tccd = 1 CLK
00
01
Burst Length supported
Number of SDRAM banks
1, 2, 4 & 8
2
0F
04
18
19
Supported CAS Latencies
CS Latencies
2, & 3
CS latency = 0
06
01
20
21
WE Latencies
SDRAM DIMM module attributes
Write latency = 0
unbuffered
01
00
22
23
SDRAM Device Attributes :General
SDRAM Cycle Time at CL = 2
Vcc tol +/- 10%
7.5 / 10 ns
75
A0
24
25
SDRAM Access Time from Clock at CL=2
SDRAM Cycle Time at CL = 1
5.4 / 6.0 ns
not supported
54
00
60
FF
26
27
SDRAM Access Time from Clock at CL=1
Minimum Row Precharge Time
not supported
20 ns
00
0F
FF
14
28
29
Minimum Row Active to Row Active delay
Minimum RAS to CAS delay
15 / 16 ns
20 ns
0E
0F
0F
30
31
Minimum Ras pulse width
Module Bank Density (per bank)
42 / 45 / 60 ns
128MB
2A
2D
20
32
32
33
SDRAM input setup time
SDRAM input hold time
1.5 / 2 ns
0.8 / 1 ns
15
08
15
08
20
10
34
35
SDRAM data input setup time
SDRAM data input hold time
1.5 / 2 ns
0.8 / 1 ns
15
08
15
08
20
10
36-61
62
Superset information
SPD Revision
0E
00
Revision 1.2
63
Checksum for bytes 0 - 62
64-125 Manufactures’s information
FF
12
F5
1E
126
127
Frequency Specification
Details
64
C7
128+
Unused storage locations
FF
INFINEON Technologies
12
10
14
81
9.01
HYS64V16200GDL/HYS64V32220GDL
144 pin SO-DIMM SDRAM Modules
Package Outlines
128 MByte SO-DIMM Module package (JEDEC MO-190)
(144 pin, dual read-out, single in-line memory module)
67,6
± 0.15
3.8 max.
25.4
± 0.13
63,6
3.3 1
23.2
59
61
32.8
143
1 ± 0.1
2.6
4.6
2
1.5
1.8
60
62
144
20
6
4
3.7
4
Detail of Contacts
0.6
0.2 -0.15
0.25
2.55
Detail of Chamfer
0.2 -0.15
0.8
L-DIM-144-10
note: all tolerances are in accordance with the JEDEC standard
INFINEON Technologies
13
9.01
HYS64V16200GDL/HYS64V32220GDL
144 pin SO-DIMM SDRAM Modules
256 MByte SO-DIMM Module package (JEDEC MO-190)
(144 pin, dual read-out, single in-line memory module)
67.6
± 0.15
3.8 max.
31.75
± 0.13
63.6
3.3 1
23.2
59
61
32.8
143
1± 0.1
2.5
24.5
4.6
2
1.5
1.8
60
62
144
20
6
4
3.7
4
0.25
0.2 -0.15
Detail of Chamfer
2.55
Detail of Contacts
0.6
0.2 -0.15
0.8
L-DIM-144-9
note: all tolerances are in accordance with the JEDEC standard
INFINEON Technologies
14
9.01
HYS64V16200GDL/HYS64V32220GDL
144 pin SO-DIMM SDRAM Modules
Change List
6.99
19.1.2000
19.7.2000
24.7.2000
25.7.2000
5.9.2000
24.11.2000
15.12.2000
5.3.2001
9.07.2001
6.09.2001
INFINEON Technologies
First and preliminary version, -8A only
-7.5 and -8 speed sorts added
CKE1 added to the block diagram
GDL versions added for 256Mbit S17-C2 with 1.5mA ICC6 per
component
-8A speed sort removed
backward compatibility for “C2” base modules clarifed
ICC6 changed from 6mA to 6.8 mA per memory bank after
the component datasheet for 256M S17 changed from 1.5 to
1.7 mA
ICC2PS changed from 16 to 8 mA
ICC6 changed from 6.8 to 7.2 mA
(Request from Axel Hahn and Uwe Fritsch)
Component datasheet unchanged at ICC6=1.7mA
Preliminary Capacitance Values added
All reference to older versions based on 256M S20 removed
ICC currents, where wrong and have been corrected according
to the latest 256M S17 datasheet
HYS64V16200GL-7/-7.5 and -8 added
HYS64V1632220GDL-7 added
SCR : Absolute Maximum Ratings Table added
15
9.01
HYS64V16200GDL/HYS64V32220GDL
144 pin SO-DIMM SDRAM Modules
INFINEON Technologies
16
9.01
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