NSR0140P2T5G Schottky Barrier Diode These Schottky barrier diodes are designed for high−speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand−held and portable applications where space is limited. http://onsemi.com Features • • • • • Extremely Fast Switching Speed Extremely Low Forward Voltage − 0.28 V (Typ) @ IF = 1.0 mA Low Reverse Current Lead−Free Plating This is a Pb−Free Device 40 V SCHOTTKY BARRIER DIODE 1 CATHODE 2 ANODE MARKING DIAGRAM 2 MAXIMUM RATINGS Symbol Value Unit Repetitive Peak Reverse Voltage Rating VRM 40 V Continuous Reverse Voltage (DC) VR 30 V Continuous Forward Current (DC) IF 70 mA IFSM 500 mA Non−Repetitive Peak Forward Surge Current ESD Rating: Class 1C per Human Body Model Class A per Machine Model Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR−5 Board, (Note 1) TA = 25°C Derate above 25°C PD 100 mW 1.0 mW/°C Thermal Resistance, Junction−to−Ambient RqJA 1000 °C/W Junction and Storage Temperature Range TJ, Tstg −55 to +125 °C 1 SOD−923 CASE 514AA PLASTIC 1 M MG G 2 M = Specific Device Code* (Character is rotated 270° clockwise) M = Month Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping† NSR0140P2T5G SOD−923 (Pb−Free) 8000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 1. FR−5 Minimum Pad. © Semiconductor Components Industries, LLC, 2009 May, 2009 − Rev. 3 1 Publication Order Number: NSR0140P2/D NSR0140P2T5G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Typ Max Unit V(BR)R 30 − − V Total Capacitance (VR = 1.0 V, f = 1.0 MHz) CT − 2.0 2.5 pF Reverse Leakage (VR = 30 V) IR − 300 500 nA Forward Voltage (IF = 1.0 mA) VF − 0.28 0.35 V Characteristic Reverse Breakdown Voltage (IR = 10 mA) 1000 IR , REVERSE CURRENT (μA) 1.0 150°C TA = 150°C 100 125°C 10 85°C 1.0 0.1 25°C 0.01 125°C 85°C 25°C -40°C -55°C 0.3 0.4 0.001 0.1 0 0.05 0.1 0.15 0.2 0.25 0.35 0.45 0.5 5 0 10 15 20 25 VR, REVERSE VOLTAGE (VOLTS) VF, FORWARD VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage 2.5 2.0 1.5 1.0 0.5 0 0 2.0 4.0 30 Figure 2. Reverse Current versus Reverse Voltage 3.0 C T, CAPACITANCE (pF) IF, FORWARD CURRENT (mA) 10 6.0 8.0 10 12 14 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Capacitance http://onsemi.com 2 16 18 35 NSR0140P2T5G PACKAGE DIMENSIONS SOD−923 CASE 514AA−01 ISSUE D D −X− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. −Y− E 1 b 2 2X 0.08 (0.0032) X Y DIM A b c D E HE L A c L HE MILLIMETERS MIN NOM MAX 0.34 0.39 0.43 0.15 0.20 0.25 0.07 0.12 0.17 0.75 0.80 0.85 0.55 0.60 0.65 0.95 1.00 1.05 0.05 0.10 0.15 MIN 0.013 0.006 0.003 0.030 0.022 0.037 0.002 INCHES NOM 0.015 0.008 0.005 0.031 0.024 0.039 0.004 MAX 0.017 0.010 0.007 0.033 0.026 0.041 0.006 SOLDERING FOOTPRINT* 0.90 0.40 0.30 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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