Infineon Specialty DRAMs Mobile-RAM w w w. i n f i n e o n . c o m / m e m o r y / Mo b i l e - R A M Never stop thinking. Mobile-RAM – Extended Battery Lifetime for Handhelds A S O N E O F T H E W O R L D ’ S T O P T H R E E memory companies, Infineon offers a wide portfolio of leading-edge Mobile-RAM devices (low-power SDRAMs) targeted specifically at: PDAs Cellphones (smart and feature phones) Digital cameras MP3 players I N F I N E O N ’ S M O B I L E - R A M product line combines Ultra low-power consumption for battery-powered systems with Extra compact chip-scale packages for space-constrained applications I N F I N E O N ’ S M O B I L E - R A M cuts power consumption by up to 80 % (depending on operating conditions and system design) – thanks to its latest memory technology, low operating voltage (1.8 V) and its unique, integrated power management features. M O B I L E - R A M D E V I C E S come in a Fine-pitch Ball Grid Array (FBGA) package. These packages leverage Infineon’s proprietary wire bonding Board-On-Chip (BOC) technology for smallest form factors. The latest product generation further improves form factor by reducing package heights from 1.2 to 1 mm. Impressive Power Consumption Savings I N F I N E O N ’ S M O B I L E - R A M devices achieve these dramatic power consumption savings by measuring the temperature with an integrated sensor and automatically adjusting the refresh interval accordingly. F O R U S E R S , this means that their devices can either run twice as long on a single battery charge or can offer completely new features that would have been previously unthinkable. The fact that nearly half of all PDAs produced today contain Mobile-RAMs from Infineon confirms the company’s pioneering role in this segment. Mobile-RAM for Lowest Power Consumption also in Operating Mode Standard SDRAM “low power sort” 215 mW 77 % 100 % 163 mW 58 % 76 % 100 % 108 mW 38 % 50 % 66 % 3.3 V - 256 M 65 mA* 2.5 V - 256 M 65 mA* 1.8 V - 256 M 60 mA* Power consumption 281 mW 100 % 3.3 V - 256 M 85 mA* * operating current (lcc1) Mobile-RAM for Unlimited Memory Supply in Standby Mode Standard SDRAM “low power sort” Power consumption 2.8 mW 100 % 3.3 V - 256 M 850 µA (70°C)* * standby current (lcc6) 1.6 mW 57 % 100 % 1.19 mW 43 % 74 % 100 % 3.3 V - 256 M 475 µA (70°C)* 2.5 V - 256 M 475 µA (70°C)* 0.68 24 43 57 mW % % % 1.8 V - 256 M 375 µA (70°C)* Ahead of the Trend 2003 2004 2005 3.3 V Voltage conversion 2.5 V 1.8 V Trend towards green package TSOP Trend towards KGD BGA FGBA Known Good Die SDR Trend towards DDR DDR Source: IFX M A N U F A C T U R E R S A R E C H A L L E N G E D to lower core and I/O voltage in order to further reduce power consumption. Compared with the 2.5 V technology previously in use, Infineon’s next-generation 1.8 V technology meets these demands by cutting power consumption by approximately 40 %. T H E M A R K E T I S A L S O C A L L I N G for a reduction in harmful substances, the elimination of lead in chips and easier recycling. Infineon is one of the first manufacturers to offer Mobile-RAM chips in green packages. I N A N T I C I P A T I O N O F R I S I N G demand for cost-optimized multi-chip solutions, (combining flash and Mobile-RAM) Infineon will also soon be introducing a pre-tested Known Good Die (KGD) / wafer solution. A N D T O R E D U C E P O W E R consumption even further, Infineon plans to switch its Mobile-RAM devices from SDR to DDR speeds. Due to be launched in the near future. For more details, please contact your local sales representative. Industry-wide Standard I N F I N E O N W O R K E D C L O S E L Y with its industry partners to standardize the low-power features and 54-ball FBGA package for Mobile-RAM through JEDEC (Joint Electron Device Engineering Council), the semiconductor engineering standardization body of EIA (Electronic Industry Alliance). Information on controller and ASIC vendors that support the new Mobile-RAM feature set standard is available on request. F O R T H E L A T E S T I N F O R M A T I O N and datasheet updates on Mobile-RAM, visit our website at www.infineon.com/memory/Mobile-RAM Product Portfolio Density 128 Mb 8 M x 16 Temp. Power Power # of range supply core supply I/O banks HYB39L128160AT-7.5 0 - 70°C 3.3 V 3.3 V 4 – – – – – – TSOP-54 HYB39L128160AC-7.5 0 - 70°C 3.3 V 3.3 V 4 – – – – – – FBGA-54 HYB25L128160AC-7.5 0 - 70°C 2.5 V 2.5 V / 1.8 V 4 – X X X – – FBGA-54 HYE25L128160AC-7.5 -25 - 85°C 2.5 V 2.5 V / 1.8 V 4 – X X X – – FBGA-54 Part number OCTS TCSR PASR DPD DS GREEN Package product NEW! HYB18L128160BF-7.5 0 - 70°C 1.8 V 1.8 V 4 X – X X X X FBGA-54 NEW! HYE18L128160BF-7.5 -25 - 85°C 1.8 V 1.8 V 4 X – X X X X FBGA-54 NEW! HYB18L128160BC-7.5 0 - 70°C 1.8 V 1.8 V 4 X – X X X – FBGA-54 NEW! HYE18L128160BC-7.5 -25 - 85°C 1.8 V 1.8 V 4 X – X X X – FBGA-54 256 Mb 16 M x 16 HYB39L256160AT-7.5 0 - 70°C 3.3 V 3.3 V 4 – – – – – – TSOP-54 HYB39L256160AC-7.5 0 - 70°C 3.3 V 3.3 V 4 – – – – – – FBGA-54 HYB25L256160AC-7.5 0 - 70°C 2.5 V 2.5 V / 1.8 V 4 X X X X – – FBGA-54 HYE25L256160AC-7.5 -25 - 85°C 2.5 V 2.5 V / 1.8 V 4 X X X X – – FBGA-54 HYB25L256160AF-7.5 0 - 70°C 3.3 V 3.3 V or or 2.5 V 2.5 V / 1.8 V 4 X X X X – X FBGA-54 4 X X X X – X FBGA-54 HYE25L256160AF-7.5 3.3 V 3.3 V or or 2.5 V 2.5 V / 1.8 V -25 - 85°C NEW! HYB18L256160BF-7.5 0 - 70°C 1.8 V 1.8 V 4 X – X X X X FBGA-54 NEW! HYE18L256160BF-7.5 -25 - 85°C 1.8 V 1.8 V 4 X – X X X X FBGA-54 NEW! HYB18L256160BC-7.5 0 - 70°C 1.8 V 1.8 V 4 X – X X X – FBGA-54 NEW! HYE18L256160BC-7.5 -25 - 85°C 1.8 V 1.8 V 4 X – X X X – FBGA-54 HYB25L512160AC-7.5 3.3 V 3.3 V or 0 - 70°C or 2.5 V 2.5 V / 1.8 V 4 X – X X – – FBGA-54 512 Mb,Dual 16 M x 16 Speed: 133 MHz CAS Latency: 3-3-3 OCTS (On-Chip Temperature Sensor): PASR (Partial Array Self-Refresh): The built-in temperature sensor adapts the refresh Allows user to select volume of memory needed to rate to the actual junction temperature of the chip further reduce power consumption without draining any CPU power. (Note: with Adjustable from all 4 banks to 1/16 array standard DRAMs, the refresh rate is set to work at the max. temperature.) DPD (Deep Power-Down): Maximum power consumption reduction by cutting TCSR (Temperature-Compensated Self-Refresh): Same as OCTS but externally triggered off power supply to Mobile-RAM Data is not retained CPU power required DS (Selectable Drive Strength): Can be adjusted to reflect bus load, e.g. half strength for point-to-point and full strength for module applications INFINEON TECHNOLOGIES Australia AUS Siemens Ltd. 885 Mountain Highway Bayswater, Victoria 3153 T (+61) 3- 97 21 21 11 Fax (+61) 3- 97 21 72 75 A Austria Infineon Technologies Villach AG Sales Office Austria AG Operngasse 20 b/31 1040 Wien T (+43) 1- 5 87 -70 70 0 Fax (+43) 1- 5 87 -70 70 20 Belgium/ B NL L Netherlands Infineon Technologies Holding B.V. Sales Division Westblaak 32 3012 KM Rotterdam T (+31) 10 -2 17 68 00 Fax (+31) 10 -2 17 68 19 Brazil BR Infineon Technologies South America Ltda. Av. 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