Diode Semiconductor Korea HER201--- HER208 VOLTAGE RANGE: 50 --- 1000 V CURRENT: 2.0 A HIGH EFFICIENCY RECTIFIERS FEATURES Low cost Low leakage Low forward voltage drop High current capability DO - 15 Easily cleaned with alcohol,Isopropanol and similar solvents The plastic material carries U/L recognition 94V-0 MECHANICAL DATA Case:JEDEC DO--15,molded plastic Terminals: Axial lead ,solderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Weight: 0.014 ounces,0.39 grams Mounting position: Any Dimensions in millimeters MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. HER 201 HER HER HER HER HER HER HER UNITS 202 203 204 205 206 207 208 Maximum recurrent peak reverse voltage VRRM 50 100 200 300 400 600 800 1000 V Maximum RMS voltage VRMS 35 70 140 210 280 420 560 700 V Maximum DC blocking voltage VDC 50 100 200 300 400 600 800 1000 V Maximum average forw ard rectified current 9.5mm lead length, @TA=75 IF(AV) 2.0 A IFSM 60.0 A Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @TJ =125 Maximum instantaneous forw ard voltage @ 2.0 A Maximum reverse current at rated DC blocking voltage @TA =25 @TA =100 VF 1.0 1.3 1.7 5.0 IR V A 100.0 Typical reverse recovery time (Note1) t rr 50 75 ns Typical junction capacitance (Note2) CJ 50 30 pF Typical thermal resistance (Note3) RθJA 50 TJ - 55 ---- + 150 TSTG - 55 ---- + 150 Operating junction temperature range Storage temperature range NOTE: 1. Measured with I F =0.5A, I R=1A, I rr=0.25A. 2. Measured at 1.0MH Z and applied rev erse v oltage of 4.0V DC. 3. Thermal resistance f rom junction to ambient. /W www.diode.kr Diode Semiconductor Korea HER201 --- HER208 FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC 50 N 1. 10 N 1. trr +0.5A D.U.T. 0 PULSE GENERATOR (NOTE2) (+) 25VDC (approx) (-) -0.25A OSCILLOSCOPE (NOTE 1) 1 NONINDUCTIVE -1.0A 1cm SET TIME BASE FOR 10/20 ns/cm NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE = 1M .22pF. JJJJJ2.RISE TIME =10ns MAX.SOURCE IMPEDANCE=50 . 100 1 .0 5 0 \1 0 0 \2 0 0 V 6 0 0 \8 0 0 \1 0 0 0 V 0 .1 0 .0 4 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 1.0 Single Phase Half Wave 60HZ Resistive or Inductive Load 0.375"(9.5mm)Lead Length 0 0 INSTANTANEOUS FORWARD VOLTAGE, VOLTS 60 40 20 10 6 4 HER206-HER208 2 1 0.4 1 2 4 10 REVERSE VOLTAGE,VOLTS 20 40 75 100 125 150 175 100 60 50 40 AMPERES HER201-HER205 TJ=25 50 FIG.5 -- PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT JUNCTION CAPACITANCE,pF 200 100 25 AMBIENT TEMPERATURE, FIG.4 -- TYPICAL JUNCTION CAPACITANCE 0.1 0.2 z 2.0 AMPERES AVERAGE FORWARD CURRENT TJ =25 P u ls e W id th = 3 0 0 µ S 0 .0 0 1 0 FIG.3 -- FORWARD DERATING CURVE 3 0 0 \4 0 0 V 10 AMPERES INSTANTANEOUS FORWARD CURRENT FIG.2 -- TYPICAL FORWARD CHARACTERISTIC TJ =25 8.3ms Single Half Sine-Wave 30 20 10 0 1 5 10 50 100 NUMBER OF CYCLES AT 60Hz www.diode.kr