BAS86 Small-Signal Diode Schottky Diode Features For general purpose applications. This diode features low turn-on voltage. This device are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications. This diode is also available in the DO-35 case with type designation BAT86. Mechanical Data Case: MiniMELF Glass Case (SOD-80) Weight: approx. 0.05g Cathode Band Color: Green Maximum Ratings and Thermal Characteristics (TA=25oC unless otherwise noted.) Parameter Symbol Value Unit Continuous reverse voltage VR 50 Volts Forward continuous current at Tamb=25oC IF 200 (1) mA Repetitive peak forward current at tp<1s, υ<0.5, Tamb=25oC IFRM 500 (1) mA Power dissipation at Tamb=25oC Ptot 200 (1) 300 (1) Thermal resistance junction to ambient air Junction temperature Ambient operating temperature range Storage temperature range Notes: RθJA mW o C/W 125 o C Tamb -65 to +125 o C TS -65 to +150 o C Tj 1. Valid provided that electrodes are kept at ambient temperature. 699 Electrical Characteristics (TJ=25oC unless otherwise noted.) Parameter Symbol Test Condition Min. Typ. Max. Unit V(BR)R IR=10uA (pulsed) 50 - - Volts IR VR=25V - 0.2 0.5 uA Forward voltage VF Pulse Test tp<300us, δ<2% IF=0.1mA IF=1mA IF=10mA IF=30mA IF=100mA - 0.200 0.275 0.365 0.460 0.700 0.300 0.380 0.450 0.600 0.900 Capacitance Ctot VR=1V, f=1MHz - - 8 pF trr IF=10mA, IR=10mA, IR=1mA - - 5 ns Reverse breakdown voltage Leakage current Reverse recovery time 700 Volt