CMPT2222AE ENHANCED SPECIFICATION SURFACE MOUNT NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT2222AE is an Enhanced version of the CMPT2222A NPN Switching transistor in a SOT-23 surface mount package, designed for switching applications, interface circuit and driver circuit applications. MARKING CODE: C1PE FEATURED ENHANCED SPECIFICATIONS: ♦ BVCBO from 75V min to 100V min. (145V TYP) SOT-23 CASE MAXIMUM RATINGS: (TA=25°C) ♦ Collector-Base Voltage ♦ Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance ♦ ♦ VCE from 1.0V max to 0.5V max. (0.12V TYP) hFE from 40 to 60 min. (130 TYP) SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg ΘJA 100 45 6.0 600 350 -65 to +150 357 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP ICBO VCB=60V ICBO VCB=60V, TA=125°C ICEV VCE=60V, VEB=3.0V IEBO VEB=3.0V IC=10µA 100 145 ♦ BVCBO IC=10mA 45 53 ♦ BVCEO BVEBO IE=10μA 6.0 0.92 ♦ VCE(SAT) IC=150mA, IB=15mA 0.12 ♦ VCE(SAT) IC=500mA, IB=50mA VBE(SAT) IC=150mA, IB=15mA 0.6 VBE(SAT) IC=500mA, IB=50mA VCE=10V, IC=0.1mA 100 210 ♦ hFE VCE=10V, IC=1.0mA 100 205 ♦ hFE VCE=10V, IC=10mA 100 205 ♦ hFE VCE=1.0V, IC=150mA 75 150 ♦ hFE hFE VCE=10V, IC=150mA 100 VCE=10V, IC=500mA 60 130 ♦ hFE fT VCE=20V, IC=20mA, f=100MHz 300 Cob VCB=10V, IE=0, f=1.0MHz Cib VBE=0.5V, IC=0, f=1.0MHz ♦ Enhanced specification MAX 10 10 10 10 0.15 0.50 1.2 2.0 UNITS V V V mA mW °C °C/W UNITS nA μA nA nA V V V V V V V 300 8.0 25 MHz pF pF R2 (1-February 2010) CMPT2222AE ENHANCED SPECIFICATION SURFACE MOUNT NPN SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX hie VCE=10V, IC=1.0mA, f=1.0kHz 2.0 8.0 hie VCE=10V, IC=10mA, f=1.0kHz 0.25 1.25 hre VCE=10V, IC=1.0mA, f=1.0kHz 8.0 hre VCE=10V, IC=10mA, f=1.0kHz 4.0 hfe VCE=10V, IC=1.0mA, f=1.0kHz 50 300 hfe VCE=10V, IC=10mA, f=1.0kHz 75 375 hoe VCE=10V, IC=1.0mA, f=1.0kHz 5.0 35 hoe VCE=10V, IC=10mA, f=1.0kHz 25 200 rb’Cc VCB=10V, IE=20mA, f=31.8MHz 150 NF VCE=10V,IC=100μA, RS =1.0KΩ, f=1.0kHz 4.0 td VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA 10 tr VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA 25 ts VCC=30V, IC=150mA, IB1=IB2=15mA 225 tf VCC=30V, IC=150mA, IB1=IB2=15mA 60 UNITS kΩ kΩ X10-4 X10-4 μS μS ps dB ns ns ns ns SOT-23 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Emitter 3) Collector MARKING CODE: C1PE R2 (1-February 2010) w w w. c e n t r a l s e m i . c o m