UniFETTM FDP51N25 / FDPF51N25 250V N-Channel MOSFET Features Description • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. 51A, 250V, RDS(on) = 0.06Ω @VGS = 10 V Low gate charge ( typical 55 nC) Low Crss ( typical 63 pF) Fast switching Improved dv/dt capability This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. D G G DS TO-220 FDP Series TO-220F GD S FDPF Series S Absolute Maximum Ratings Symbol Parameter FDP51N25 FDPF51N25 250 Unit VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed VGSS Gate-Source voltage EAS Single Pulsed Avalanche Energy IAR Avalanche Current EAR Repetitive Avalanche Energy (Note 1) 32 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (Note 1) (TC = 25°C) - Derate above 25°C V 51 30 51* 30* A A 204 204* A ± 30 V (Note 2) 1111 mJ (Note 1) 51 A 320 3.7 TJ, TSTG Operating and Storage Temperature Range TL Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds 38 0.3 W W/°C -55 to +150 °C 300 °C *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter FDP51N25 FDPF51N25 Unit RθJC Thermal Resistance, Junction-to-Case 0.39 3.3 °C/W RθCS Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W RθJA Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/WJ ©2008 Fairchild Semiconductor Corporation FDP51N25 / FDPF51N25 Rev. B 1 www.fairchildsemi.com FDP51N25 / FDPF51N25 250V N-Channel MOSFET July 2008 Device Marking Device Package Reel Size Tape Width Quantity FDP51N25 FDP51N25 TO-220 - - 50 FDPF51N25 FDPF51N25 TO-220F - - 50 Electrical Characteristics Symbol TC = 25°C unless otherwise noted Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250μA, TJ = 25°C 250 -- -- V ΔBVDSS / ΔTJ Breakdown Voltage Temperature Coefficient ID = 250μA, Referenced to 25°C -- 0.25 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 250V, VGS = 0V VDS = 200V, TC = 125°C --- --- 1 10 μA μA IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250μA 3.0 -- 5.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 25.5A -- 0.048 0.060 Ω gFS Forward Transconductance VDS = 40V, ID = 25.5A -- 43 -- S -- 2620 3410 pF -- 530 690 pF -- 63 90 pF -- 62 135 ns -- 465 940 ns -- 98 205 ns (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 125V, ID = 51A RG = 25Ω (Note 4, 5) VDS = 200V, ID = 51A VGS = 10V (Note 4, 5) -- 130 270 ns -- 55 70 nC -- 16 -- nC -- 27 -- nC -- -- 51 A Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 204 A VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 51A -- -- 1.4 V trr Reverse Recovery Time 178 -- ns Reverse Recovery Charge VGS = 0V, IS = 51A dIF/dt =100A/μs -- Qrr -- 4.0 -- μC (Note 4) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 0.68mH, IAS = 51A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 51A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics FDP51N25 / FDPF51N25 Rev. B 2 www.fairchildsemi.com FDP51N25 / FDPF51N25 250V N-Channel MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics VGS Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V ID, Drain Current [A] 2 10 ID, Drain Current [A] 2 10 1 10 o 150 C o 25 C 1 10 o -55 C * Notes : 1. VDS = 40V * Notes : 1. 250μs Pulse Test 2. 250μs Pulse Test o 2. TC = 25 C 0 10 0 -1 0 10 10 1 10 10 2 4 6 10 12 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 0.14 2 10 IDR, Reverse Drain Current [A] RDS(ON) [Ω], Drain-Source On-Resistance 8 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] 0.12 0.10 VGS = 10V 0.08 VGS = 20V 0.06 o 0.04 1 10 o 150 C o 25 C * Notes : 1. VGS = 0V 2. 250μs Pulse Test * Note : TJ = 25 C 0 0 25 50 75 100 125 10 150 0.2 0.4 ID, Drain Current [A] 0.6 0.8 1.0 1.2 1.4 1.6 1.8 VSD, Source-Drain voltage [V] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 12 6000 Ciss = Cgs + Cgd (Cds = shorted) 10 VGS, Gate-Source Voltage [V] Coss = Cds + Cgd Capacitances [pF] Crss = Cgd 4000 Coss Ciss 2000 * Note ; 1. VGS = 0 V Crss 2. f = 1 MHz VDS = 50V VDS = 125V VDS = 200V 8 6 4 2 * Note : ID = 51A 0 0 -1 10 0 10 1 10 10 20 30 40 50 60 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] FDP51N25 / FDPF51N25 Rev. B 0 3 www.fairchildsemi.com FDP51N25 / FDPF51N25 250V N-Channel MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 1.1 1.0 * Notes : 1. VGS = 0 V 0.9 2.5 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 2. ID = 250 μA 2.0 1.5 1.0 * Notes : 1. VGS = 10 V 0.5 2. ID = 25.5 A 0.8 -100 -50 0 50 100 150 0.0 -100 200 -50 0 o TJ, Junction Temperature [ C] 0 10 * Notes : o 1. TC = 25 C -1 10 10 μs 1 ms 10 ms 1 10 100 ms Operation in This Area is Limited by R DS(on) 0 10 DC * Notes : o 1. TC = 25 C -1 10 o 2. TJ = 150 C o 2. TJ = 150 C 3. Single Pulse 3. Single Pulse -2 10 200 100 μs 1 ms 10 ms 100 ms DC ID, Drain Current [A] ID, Drain Current [A] 2 10 100 μs Operation in This Area is Limited by R DS(on) 150 Figure 9-2. Maximum Safe Operating Area for FDPF51N25 10 μs 2 10 1 100 o Figure 9-1. Maximum Safe Operating Area for FDP51N25 10 50 TJ, Junction Temperature [ C] -2 0 1 10 10 2 10 10 0 10 VDS, Drain-Source Voltage [V] 1 10 2 10 VDS, Drain-Source Voltage [V] Figure 10. Maximum Drain Current vs. Case Temperature 60 ID, Drain Current [A] 50 40 30 20 10 0 25 50 75 100 125 150 o TC, Case Temperature [ C] FDP51N25 / FDPF51N25 Rev. B 4 www.fairchildsemi.com FDP51N25 / FDPF51N25 250V N-Channel MOSFET Typical Performance Characteristics (Continued) FDP51N25 / FDPF51N25 250V N-Channel MOSFET Typical Performance Characteristics (Continued) ZθJC(t), Thermal Response Figure 11-1. Transient Thermal Response Curve for FDP51N25 D=0.5 10 -1 0.2 0.1 PDM 0.05 t1 0.02 10 -2 t2 * Notes : 0 1. Z θ JC (t) = 0.39 C/W Max. 0.01 2. Duty Factor, D=t1 /t 2 3. T JM - T C = P DM * Z θ JC (t) single pulse 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , Square W ave Pulse Duration [sec] Figure 11-2. Transient Thermal Response Curve for FDPF51N25 ZθJC(t), Thermal Response D=0.5 0 10 0.2 0.1 PDM 0.05 t1 -1 10 0.02 t2 * Notes : 0 1. ZθJC(t) = 3.3 C/W Max. 0.01 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZθJC(t) single pulse -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 t1, Square Wave Pulse Duration [sec] FDP51N25 / FDPF51N25 Rev. B 5 www.fairchildsemi.com FDP51N25 / FDPF51N25 250V N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDP51N25 / FDPF51N25 Rev. B 6 www.fairchildsemi.com FDP51N25 / FDPF51N25 250V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms FDP51N25 / FDPF51N25 Rev. B 7 www.fairchildsemi.com TO-220 $ % 0,1 $ % Dimensions in Millimeters FDP51N25 / FDPF51N25 Rev. B 8 www.fairchildsemi.com FDP51N25 / FDPF51N25 250V N-Channel MOSFET Mechanical Dimensions (Continued) TO-220F 3.30 ±0.10 10.16 ±0.20 2.54 ±0.20 ø3.18 ±0.10 (7.00) (1.00x45°) 15.87 ±0.20 15.80 ±0.20 6.68 ±0.20 (0.70) 0.80 ±0.10 ) 0° (3 9.75 ±0.30 MAX1.47 #1 +0.10 0.50 –0.05 2.54TYP [2.54 ±0.20] 2.76 ±0.20 2.54TYP [2.54 ±0.20] 9.40 ±0.20 4.70 ±0.20 0.35 ±0.10 Dimensions in Millimeters FDP51N25 / FDPF51N25 Rev. B 9 www.fairchildsemi.com FDP51N25 / FDPF51N25 250V N-Channel MOSFET Mechanical Dimensions Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® EfficentMax™ EZSWITCH™ * PDP SPM™ Power-SPM™ PowerTrench® Programmable Active Droop™ QFET® QS™ Quiet Series™ RapidConfigure™ Saving our world, 1mW at a time™ SmartMax™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SuperMOS™ SyncFET™ ® FPS™ F-PFS™ FRFET® Global Power ResourceSM Green FPS™ Green FPS™ e-Series™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® ™ ® tm Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FlashWriter® * ® tm The Power Franchise® tm TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ UHC® Ultra FRFET™ UniFET™ VCX™ VisualMax™ * EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I35 10 FDP51N25 / FDPF51N25 Rev. B www.fairchildsemi.com FDP51N25 / FDPF51N25 250V N-Channel MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks.