POSEICO ATD501 Phase control module Datasheet

POSEICO SPA
Via Pillea 42-44, 16153 Genova - ITALY
Tel. + 39 010 8599400 - Fax + 39 010 8682006
Sales Office:
Tel. + 39 010 8599400 - [email protected]
PHASE CONTROL MODULE
ATD501
Repetitive voltage up to
Mean forward current
Surge current
1600 V
533 A
14,5 kA
FINAL SPECIFICATION
apr 17 - ISSUE : 02
Symbol
Characteristic
Tj
[°C]
Conditions
Value
Unit
BLOCKING
V
RRM
Repetitive peak reverse/off-state voltage
125
1600
V
V
RSM
Non-repetitive peak reverse voltage
125
1700
V
I
RRM/DRM
Repetitive peak reverse/off-state current
125
50
mA
533
A
CONDUCTING
I
T (AV)
Mean forward current
180° sin, 50 Hz, Th=85°C, double side cooled
I
T (AV)
Mean forward current
180° sin, 50 Hz, Tc=55°C, double side cooled
I
TSM
Surge forward current
I² t
I² t
Sine wave, 10 ms
without reverse voltage
V
T
On-state voltage
On-state current =
V
T(TO)
r
T
125
800
A
14,5
kA
3
1051 x 10
1600 A
A²s
25
1,63
Threshold voltage
125
1,00
V
V
On-state slope resistance
125
0,380
mohm
SWITCHING
di/dt
Critical rate of rise of on-state current, min.
From 75% VDRM up to 1050 A; gate 10V, 5W
125
200
A/µs
dv/dt
Critical rate of rise of off-state voltage, min.
Linear ramp up to 70% of VDRM
125
500
V/µs
t d
Gate controlled delay time, typical
VD=100V; gate source 25V, 10W , tr=.5 µs
25
1,1
µs
t q
Circuit commutated turn-off time, typical
dv/dt = 20 V/µs linear up to 75% VDRM
200
µs
Q rr
Reverse recovery charge
di/dt = -20 A/µs, I= 700 A
I rr
Peak reverse recovery current
VR= 50 V
I
H
Holding current, typical
VD=5V, gate open circuit
25
300
mA
I
L
Latching current, typical
VD=5V, tp=30µs
25
700
mA
V
GT
Gate trigger voltage
VD=5V
25
3,50
V
I
GT
Gate trigger current
VD=5V
25
250
mA
V
GD
Non-trigger gate voltage, min.
VD=VDRM
125
0,25
V
V
FGM
Peak gate voltage (forward)
30
V
I
FGM
Peak gate current
10
A
V
RGM
Peak gate voltage (reverse)
P
GM
Peak gate power dissipation
P
G
Average gate power dissipation
R
th(j-h)
Thermal impedance, DC
Junction to case, per element
R
th(c-h)
Thermal impedance
Case to heatsink, per element
T
j
Operating junction temperature
125
µC
A
GATE
Pulse width 100 µs
5
V
150
W
2
W
MOUNTING
V ins
RMS insulation voltage
50 hz , circuit to base, all terminal shorted
T
Mounting torque
Case to heatsink
T
Mounting torque
Busbars to terminal
Mass
ORDERING INFORMATION : ATD501 S 16
standard specification
VRRM/100
25
50,0
°C/kW
20,0
°C/kW
-30 / 125
°C
4500
V
4 to 6
kN
12 to 18
kN
1500
g
ATD501 PHASE CONTROL MODULE
FINAL SPECIFICATION
apr 17 - ISSUE : 02
DISSIPATION CHARACTERISTICS
SQUARE WAVE
Tcase [°C]
130
125
120
115
110
105
100
95
90
85
30°
80
0
100
200
60°
300
90°
120°
400
180°
500
DC
600
700
IF(AV) [A]
PF(AV) [W]
900
DC
800
180°
700
60°
600
90°
120°
30°
500
400
300
200
100
0
0
100
200
300
IF(AV) [A]
400
500
600
700
ATD501 PHASE CONTROL MODULE
FINAL SPECIFICATION
apr 17 - ISSUE : 02
DISSIPATION CHARACTERISTICS
SINE WAVE
Tcase [°C]
130
125
120
115
110
105
100
95
90
85
30°
80
0
100
200
60°
300
90°
400
120°
180°
500
600
IF(AV) [A]
PF(AV) [W]
900
120°
800
60°
700
180°
90°
30°
600
500
400
300
200
100
0
0
100
200
300
IF(AV) [A]
400
500
600
ATD501 PHASE CONTROL MODULE
FINAL SPECIFICATION
apr 17 - ISSUE : 02
ON-STATE CHARACTERISTIC
Tj = 125 °C
SURGE CHARACTERISTIC
Tj = 125 °C
1800
16
1600
14
12
1200
10
ITSM [kA]
On-State Current [A]
1400
1000
800
600
8
6
400
4
200
2
0
0
0
0,5
1
1,5
2
1
On-State Voltage [V]
10
n° cycles
TRANSIENT THERMAL IMPEDANCE
60
50
Zth j-h [°C/kW]
40
30
20
10
0
0,001
0,01
0,1
1
10
100
t[s]
Distributed by
All the characteristics given in this data sheet are guaranteed only with uniform clamping force,
cleaned and lubricated heatsink, surfaces with flatness < .03 mm and roughness < 2 µm.
In the interest of product improvement POSEICO SpA reserves the right to change any data
given in this data sheet at any time without previous notice.
If not stated otherwise the maximum value of ratings (simbols over shaded background) and
characteristics is reported.
100
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