FDMS86369_F085 N-Channel PowerTrench® MOSFET 80 V, 65 A, 7.5 mΩ Features Typical RDS(on) = 5.9 mΩ at VGS = 10V, ID = 65 A Typical Qg(tot) = 35 nC at VGS = 10V, ID = 65 A UIS Capability RoHS Compliant Qualified to AEC Q101 Applications Automotive Engine Control PowerTrain Management Solenoid and Motor Drivers Integrated Starter/Alternator For current package drawing, please refer to the Fairchild web‐ site at https://www.fairchildsemi.com/package‐drawings/PQ/ PQFN08M.pdf Primary Switch for 12V Systems MOSFET Maximum Ratings TJ = 25°C unless otherwise noted. Symbol VDSS Drain-to-Source Voltage VGS ID EAS PD Parameter Ratings 80 Units V ±20 V Gate-to-Source Voltage Drain Current - Continuous (VGS=10) (Note 1) TC = 25°C 65 Pulsed Drain Current TC = 25°C See Figure 4 Single Pulse Avalanche Energy (Note 2) 27 A mJ Power Dissipation 107 W Derate Above 25oC 0.71 W/oC TJ, TSTG Operating and Storage Temperature RθJC Thermal Resistance, Junction to Case RθJA Maximum Thermal Resistance, Junction to Ambient -55 to +175 oC 1.4 oC/W 50 oC/W (Note 3) Notes: 1: Current is limited by bondwire configuration. 2: Starting TJ = 25°C, L = 20uH, IAS = 52A, VDD = 80V during inductor charging and VDD = 0V during time in avalanche. 3: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design, while RθJAis determined by the board design. The maximum rating presented here is based on mounting on a 1 in2 pad of 2oz copper. Package Marking and Ordering Information Device Marking FDMS86369 Device FDMS86369_F085 ©2015 Fairchild Semiconductor Corporation FDMS86369_F085 Rev. C1 Package Power56 Reel Size 13” 1 Tape Width 12mm Quantity 3000units www.fairchildsemi.com FDMS86369_F085 N-Channel PowerTrench® MOSFET March 2015 Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVDSS Drain-to-Source Breakdown Voltage IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Leakage Current ID = 250μA, VGS = 0V VDS = 80V VGS = 0V 80 - - V - - 1 μA - - 1 mA - - ±100 nA TJ = 25oC TJ = 175oC (Note 4) VGS = ±20V On Characteristics VGS(th) RDS(on) Gate to Source Threshold Voltage Drain to Source On Resistance VGS = VDS, ID = 250μA 2 3 4 V ID = 65A, VGS= 10V - 5.9 7.5 mΩ - 12.2 15.5 mΩ TJ = 25oC TJ = 175oC (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance f = 1MHz Qg(ToT) Total Gate Charge VGS = 0 to 10V Qg(th) Threshold Gate Charge VGS = 0 to 2V - 4.5 - nC Qgs Gate-to-Source Gate Charge - 12.5 - nC Qgd Gate-to-Drain “Miller“ Charge - 8 - nC ns VDS = 40V, VGS = 0V, f = 1MHz VDD = 64V ID = 65A - 2470 - pF - 400 - pF - 14 - pF - 1.8 - Ω - 35 46 nC Switching Characteristics ton Turn-On Time - - 39 td(on) Turn-On Delay - 15 - ns tr Rise Time - 11 - ns td(off) Turn-Off Delay - 24 - ns tf Fall Time - 8 - ns toff Turn-Off Time - - 48 ns ISD =65A, VGS = 0V - - 1.4 V ISD = 32.5A, VGS = 0V - - 1.2 V IF = 65A, dISD/dt = 100A/μs VDD = 64V - 49 74 ns - 44 68 nC VDD = 40V, ID = 65A, VGS = 10V, RGEN = 6Ω Drain-Source Diode Characteristics VSD Source-to-Drain Diode Voltage trr Reverse-Recovery Time Qrr Reverse-Recovery Charge Note: 4: The maximum value is specified by design at TJ = 175°C. Product is not tested to this condition in production. ©2015 Fairchild Semiconductor Corporation FDMS86369_F085 Rev. C1 2 www.fairchildsemi.com FDMS86369_F085 N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted. 1.0 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 100 1.2 0.8 0.6 0.4 0.2 0.0 CURRENT LIMITED BY PACKAGE 80 VGS = 10V CURRENT LIMITED BY SILICON 60 40 20 0 0 25 50 75 100 125 150 TC, CASE TEMPERATURE(oC) 175 25 50 75 100 125 150 175 TC, CASE TEMPERATURE(oC) 200 Figure 2. Maximum Continuous Drain Current vs. Case Temperature Figure 1. Normalized Power Dissipation vs. Case Temperature NORMALIZED THERMAL IMPEDANCE, ZθJC 2 1 0.1 DUTY CYCLE - DESCENDING ORDER D = 0.50 0.20 0.10 0.05 0.02 0.01 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TC SINGLE PULSE 0.01 -5 10 -4 10 -3 -2 -1 0 10 10 10 t, RECTANGULAR PULSE DURATION(s) 1 10 10 Figure 3. Normalized Maximum Transient Thermal Impedance 1000 TC = 25oC VGS = 10V FOR TEMPERATURES IDM, PEAK CURRENT (A) ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: I = I2 175 - TC 150 100 SINGLE PULSE 10 -5 10 -4 10 -3 -2 -1 10 10 10 t, RECTANGULAR PULSE DURATION(s) 0 10 1 10 Figure 4. Peak Current Capability ©2015 Fairchild Semiconductor Corporation FDMS86369_F085 Rev. C1 3 www.fairchildsemi.com FDMS86369_F085 N-Channel PowerTrench® MOSFET Typical Characteristics 500 IAS, AVALANCHE CURRENT (A) ID, DRAIN CURRENT (A) 1000 100 100 10 100us OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 1 SINGLE PULSE TJ = MAX RATED TC = 25oC 0.1 0.01 0.1 1ms 10ms 100ms 1 10 100 VDS, DRAIN TO SOURCE VOLTAGE (V) TJ = 175oC 50 TJ = -55oC 2 1 10 100 200 100 0 0.1 Figure 6. Unclamped Inductive Switching Capability VDD = 5V TJ = 25oC 0.01 NOTE: Refer to Fairchild Application Notes AN7514 and AN7515 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 150 STARTING TJ = 150oC tAV, TIME IN AVALANCHE (ms) IS, REVERSE DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 200 STARTING TJ = 25oC 10 1 0.001 500 Figure 5. Forward Bias Safe Operating Area 3 4 5 6 7 8 9 VGS, GATE TO SOURCE VOLTAGE (V) 100 10 VGS = 0 V TJ = 25 oC TJ = 175 oC 1 0.1 0.0 10 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 7. Transfer Characteristics Figure 8. Forward Diode Characteristics 200 150 100 80μs PULSE WIDTH Tj=25oC 50 ID, DRAIN CURRENT (A) 200 ID, DRAIN CURRENT (A) If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R ≠ 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] VGS 15V Top 10V 8V 7V 6V 5.5V 5V Bottom 80μs PULSE WIDTH Tj=175oC VGS 15V Top 10V 8V 7V 6V 5.5V 5V Bottom 150 100 50 5V 5V 0 0 1 2 3 4 VDS, DRAIN TO SOURCE VOLTAGE (V) 0 5 0 Figure 9. Saturation Characteristics ©2015 Fairchild Semiconductor Corporation FDMS86369_F085 Rev. C1 1 2 3 4 VDS, DRAIN TO SOURCE VOLTAGE (V) 5 Figure 10. Saturation Characteristics 4 www.fairchildsemi.com FDMS86369_F085 N-Channel PowerTrench® MOSFET Typical Characteristics I D = 65A NORMALIZED DRAIN TO SOURCE ON-RESISTANCE rDS(on) , DRAIN TO SOURCE ON-RESISTANCE (m Ω) 100 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 80 60 T J = 175oC TJ = 25oC 40 20 0 4 5 6 7 8 9 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 11. RDSON vs. Gate Voltage 1.6 1.4 1.2 1.0 0.8 ID = 65A VGS = 10V 0.6 0.4 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 200 1.10 ID = 5mA 1.05 1.0 0.8 1.00 0.6 0.95 0.4 0.2 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 0.90 -80 200 10000 Ciss 1000 Coss 100 10 f = 1MHz VGS = 0V 1 0.1 Crss 1 10 V DS, DRAIN TO SOURCE VOLTAGE (V) 100 Figure 15. Capacitance vs. Drain to Source Voltage ©2015 Fairchild Semiconductor Corporation FDMS86369_F085 Rev. C1 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) 200 Figure 14. Normalized Drain to Source Breakdown Voltage vs. Junction Temperature V GS, GATE TO SOURCE VOLTAGE(V) Figure 13. Normalized Gate Threshold Voltage vs. Temperature CAPACITANCE (pF) 1.8 Figure 12. Normalized RDSON vs. Junction Temperature VGS = VDS ID = 250μA 1.2 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 2.0 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE NORMALIZED GATE THRESHOLD VOLTAGE 1.4 2.2 10 ID = 65A 8 V DD =32V VDD = 40V V DD = 48V 6 4 2 0 0 5 10 15 20 25 Q g, GATE CHARGE(nC) 30 35 Figure 16. Gate Charge vs. Gate to Source Voltage 5 www.fairchildsemi.com FDMS86369_F085 N-Channel PowerTrench® MOSFET Typical Characteristics TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I73 ©2015 Fairchild Semiconductor Corporation FDMS86369_F085 Rev. C1 6 www.fairchildsemi.com