IRF HFA15PB60PBF Ultrafast, soft recovery diode Datasheet

PD - 95681A
HFA15PB60PbF
HEXFRED
•
•
•
•
•
•
Ultrafast, Soft Recovery Diode
TM
Features
BASE
CATHODE
Ultrafast Recovery
Ultrasoft Recovery
Very Low IRRM
Very Low Qrr
Specified at Operating Conditions
Lead-Free
Benefits
4
2
1
CATHODE
• Reduced RFI and EMI
• Reduced Power Loss in Diode and Switching
Transistor
• Higher Frequency Operation
• Reduced Snubbing
• Reduced Parts Count
3
ANODE
2
VR = 600V
VF(typ.)* = 1.3V
IF(AV) = 15A
Qrr (typ.)= 80nC
IRRM (typ.) = 4.0A
trr(typ.) = 19ns
di(rec)M/dt (typ.)* = 160A/µs
Description
International Rectifier's HFA15PB60 is a state of the art ultra fast recovery
diode. Employing the latest in epitaxial construction and advanced processing
techniques it features a superb combination of characteristics which result in
performance which is unsurpassed by any rectifier previously available. With
basic ratings of 600 volts and 15 amps continuous current, the HFA15PB60 is
especially well suited for use as the companion diode for IGBTs and MOSFETs.
In addition to ultra fast recovery time, the HEXFRED product line features
extremely low values of peak recovery current (IRRM) and does not exhibit any
tendency to "snap-off" during the tb portion of recovery. The HEXFRED features
combine to offer designers a rectifier with lower noise and significantly lower
switching losses in both the diode and the switching transistor. These HEXFRED
advantages can help to significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED HFA15PB60 is ideally suited for applications in
power supplies and power conversion systems (such as inverters), motor
drives, and many other similar applications where high speed, high efficiency
is needed.
TO-247AC (Modified)
Absolute Maximum Ratings
Parameter
VR
IF @ TC = 100°C
IFSM
IFRM
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Cathode-to-Anode Voltage
Continuous Forward Current
Single Pulse Forward Current
Maximum Repetitive Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Max
Units
600
15
150
60
74
29
V
-55 to +150
A
W
C
* 125°C
www.irf.com
1
11/2/04
HFA15PB60PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min Typ Max Units
VBR
Cathode Anode Breakdown Voltage
600
V
VFM
Max Forward Voltage
IRM
Max Reverse Leakage Current
CT
Junction Capacitance
1.3 1.7
1.5 2.0
1.2 1.6
1.0
10
400 1000
25
50
LS
Series Inductance
12
V
µA
pF
nH
Test Conditions
IR = 100µA
IF = 15A
See Fig. 1
IF = 30A
IF = 15A, TJ = 125°C
See Fig. 2
VR = VR Rated
TJ = 125°C, VR = 0.8 x VR RatedD Rated
See Fig. 3
VR = 200V
Measured lead to lead 5mm from
package body
Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
trr
trr1
trr2
IRRM1
IRRM2
Qrr1
Qrr2
di(rec)M/dt1
di(rec)M/dt2
Reverse Recovery Time
See Fig. 5, 10
Peak Recovery Current
See Fig. 6
Reverse Recovery Charge
See Fig. 7
Peak Rate of Fall of Recovery Current
During tb
See Fig. 8
Min Typ Max Units
19
42
74
4.0
6.5
80
220
188
160
60
120
6.0
10
180
600
Test Conditions
IF = 1.0A, dif/dt = 200A/µs, VR = 30V
ns TJ = 25°C
TJ = 125°C
IF = 15A
TJ = 25°C
A
TJ = 125°C
VR = 200V
TJ = 25°C
nC
TJ = 125°C
dif/dt = 200A/µs
TJ = 25°C
A/µs
TJ = 125°C
Thermal - Mechanical Characteristics
Parameter
Tlead
RthJC
RthJA‚
RthCSƒ
Lead Temperature
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Thermal Resistance, Case to Heat Sink
Wt
Weight
Mounting Torque
Min
Typ
Max
Units
300
1.7
40
°C
K/W
12
10
g
(oz)
Kg-cm
lbf•in
0.25
6.0
0.21
6.0
5.0
 0.063 in. from Case (1.6mm) for 10 sec
‚ Typical Socket Mount
ƒ Mounting Surface, Flat, Smooth and Greased
2
www.irf.com
HFA15PB60PbF
Reverse Current - IR (µA)
10000
TJ = 150°C
TJ = 125°C
10
TJ = 150°C
1000
100
TJ = 125°C
10
1
0.1
TJ = 25°C
A
0.01
0
100
200
300
400
500
600
Reverse Voltage - V R (V)
TJ = 25°C
Fig. 2 - Typical Reverse Current vs. Reverse
Voltage
100
A
1
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
ForwardVoltage
VoltageDrop
Drop- -VVFM
(V)
Forward
FM(V)
Fig. 1 - Maximum Forward Voltage Drop
vs. Instantaneous Forward Current
Junction Capacitance -CT (pF)
Instantaneous Forward Current - IF (A)
100
A
TJ = 25°C
A
10
10
100
1000
Reverse Voltage - V R (V)
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
Thermal Response (Z thJC )
10
1
D = 0.50
0.20
0.10
0.1
0.01
0.00001
PDM
0.05
0.02
0.01
t1
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x ZthJC + TC
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 4 - Maximum Thermal Impedance Zthjc Characteristics
www.irf.com
3
HFA15PB60PbF
100
25
VR = 200V
TJ = 125°C
TJ = 25°C
I F = 30A
I F = 15A
I F = 5.0A
80
20
I F = 30A
I F = 15A
60
Irr- ( A)
trr- (ns)
I F = 5.0A
15
40
10
20
5
VR = 200V
TJ = 125°C
TJ = 25°C
0
100
A
di f /dt - (A/µs)
10000
800
VR = 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
I F = 30A
di (rec) M/dt- (A /µs)
I F = 15A
Qrr- (nC)
di f /dt - (A/µs)
1000
Fig. 6 - Typical Recovery Current vs. dif/dt
Fig. 5 - Typical Reverse Recovery Time vs. dif/dt
600
A
0
100
1000
IF = 5.0A
400
I F = 30A
I F = 15A
1000
I F = 5.0A
200
0
100
A
di f /dt - (A/µs)
1000
Fig. 7 - Typical Stored Charge vs. dif/dt
4
100
100
A
di f /dt - (A/µs)
1000
Fig. 8 - Typical di(rec)M/dt vs. dif/dt
www.irf.com
HFA15PB60PbF
3
t rr
IF
REVERSE RECOVERY CIRCUIT
tb
ta
0
VR = 200V
2
Q rr
I RRM
4
0.5 I RRM
di(rec)M/dt
0.01 Ω
0.75 I RRM
L = 70µH
D.U.T.
dif/dt
ADJUST
D
G
IRFP250
S
Fig. 9 - Reverse Recovery Parameter Test
Circuit
www.irf.com
5
1
di f /dt
1. dif/dt - Rate of change of current
through zero crossing
2. IRRM - Peak reverse recovery current
3. trr - Reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current
4. Qrr - Area under curve defined by trr
and IRRM
trr X IRRM
Qrr =
2
5. di(rec)M/dt - Peak rate of change of
current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and
Definitions
5
HFA15PB60PbF
Conforms to JEDEC Outline TO-247AC MODIFIED
Dimensions in millimeters and inches
Note: Marking "P" indicates Lead-Free
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.11/04
6
www.irf.com
Similar pages