DATASHEET HIP2101 100V/2A Peak, Low Cost, High Frequency Half Bridge Driver The HIP2101 is a high frequency, 100V Half Bridge N-Channel power MOSFET driver IC. It is equivalent to the HIP2100 with the added advantage of full TTL/CMOS compatible logic input pins. The low-side and high-side gate drivers are independently controlled and matched to 13ns. This gives users total control over dead-time for specific power circuit topologies. Undervoltage protection on both the low-side and high-side supplies force the outputs low. An on-chip diode eliminates the discrete diode required with other driver ICs. A new level-shifter topology yields the lowpower benefits of pulsed operation with the safety of DC operation. Unlike some competitors, the high-side output returns to its correct state after a momentary undervoltage of the high-side supply. FN9025 Rev 9.00 November 12, 2015 Features • Drives N-Channel MOSFET Half Bridge • SOIC, EPSOIC, QFN and DFN Package Options • SOIC, EPSOIC and DFN Packages Compliant with 100V Conductor Spacing Guidelines of IPC-2221 • Pb-free Product Available (RoHS Compliant) • Bootstrap Supply Max Voltage to 114VDC • On-Chip 1 Bootstrap Diode • Fast Propagation Times for Multi-MHz Circuits • Drives 1000pF Load with Rise and Fall Times Typ. 10ns • TTL/CMOS Input Thresholds Increase Flexibility Ordering Information PART NUMBER TEMP. RANGE (°C) • Independent Inputs for Non-Half Bridge Topologies PACKAGE 8 Ld SOIC PKG. DWG. # M8.15 • No Start-Up Problems • Outputs Unaffected by Supply Glitches, HS Ringing Below Ground, or HS Slewing at High dv/dt HIP2101IB (No longer available, recommended replacement: HIP2101IBZ) -40 to 125 HIP2101IBZ (Note 1) -40 to 125 8 Ld SOIC (Pb-free) M8.15 • Supply Undervoltage Protection HIP2101EIB (No longer available, recommended replacement: HIP2101EIBZ) -40 to 125 8 Ld EPSOIC • 3 Output Driver Resistance HIP2101EIBZ (Note 1) -40 to 125 8 Ld EPSOIC (Pb-free) M8.15C HIP2101IRZ (Note 1) -40 to 125 16 Ld 5x5 QFN (Pb-free) L16.5x5 HIP2101IR4Z (Note 1) -40 to 125 12 Ld 4x4 DFN (Pb-free) L12.4x4A • Low Power Consumption • Wide Supply Range M8.15C NOTES: 1. Intersil Pb-free products employ special Pb-free material sets; molding compounds/die attach materials and 100% matte tin plate termination finish, which are RoHS compliant and compatible with both SnPb and Pb-free soldering operations. Intersil Pb-free products are MSL classified at Pb-free peak reflow temperatures that meet or exceed the Pb-free requirements of IPC/JEDEC J STD-020C. • QFN/DFN Package: - Compliant to JEDEC PUB95 MO-220 QFN - Quad Flat No Leads - Package Outline - Near Chip Scale Package footprint, which improves PCB efficiency and has a thinner profile Applications • Telecom Half Bridge Power Supplies • Avionics DC-DC Converters • Two-Switch Forward Converters • Active Clamp Forward Converters 2. Add “T” suffix for Tape and Reel packing option. FN9025 Rev 9.00 November 12, 2015 Page 1 of 13 HIP2101 Pinouts 6 LI 5 HI VDD 1 12 LO NC 2 11 VSS NC 3 HB 4 HO HS 16 15 14 13 NC 1 10 NC EPAD NC VSS 12 NC HB 2 11 VSS 9 NC 5 8 LI HO 3 10 LI 6 7 HI NC 4 9 EPAD 5 6 7 NC 8 NC 4 7 LO 3 HS LO HI HO EPAD 8 VDD 2 HS 1 HB HIP2101 (QFN) TOP VIEW NC VDD HIP2101IR4 (DFN) TOP VIEW NC HIP2101 (SOIC, EPSOIC) TOP VIEW NOTE: EPAD = Exposed PAD. Application Block Diagram +12V +100V SECONDARY CIRCUIT VDD HB DRIVE HI PWM CONTROLLER LI CONTROL HI HS DRIVE LO HIP2101 VSS FN9025 Rev 9.00 November 12, 2015 HO LO REFERENCE AND ISOLATION Page 2 of 13 HIP2101 Functional Block Diagram HB VDD UNDER VOLTAGE HO LEVEL SHIFT DRIVER HS HI UNDER VOLTAGE LO DRIVER LI VSS EPAD (EPSOIC, QFN and DFN PACKAGES ONLY) *EPAD = Exposed Pad. The EPAD is electrically isolated from all other pins. For best thermal performance connect the EPAD to the PCB power ground plane. +48V +12V PWM SECONDARY CIRCUIT HIP 2101 ISOLATION FIGURE 1. TWO-SWITCH FORWARD CONVERTER +48V SECONDARY CIRCUIT +12V PWM HIP 2101 ISOLATION FIGURE 2. FORWARD CONVERTER WITH AN ACTIVE CLAMP FN9025 Rev 9.00 November 12, 2015 Page 3 of 13 HIP2101 Absolute Maximum Ratings Thermal Information Supply Voltage, VDD, VHB-VHS (Notes 3, 4) . . . . . . . . -0.3V to 18V LI and HI Voltages (Note 4) . . . . . . . . . . . . . . . . . . . . . -0.3V to 7.0V Voltage on LO (Note 4) . . . . . . . . . . . . . . . . . . . -0.3V to VDD +0.3V Voltage on HO (Note 4) . . . . . . . . . . . . . . . VHS -0.3V to VHB +0.3V Voltage on HS (Continuous) (Note 4) . . . . . . . . . . . . . . -1V to 110V Voltage on HB (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +118V Average Current in VDD to HB diode . . . . . . . . . . . . . . . . . . . 100mA ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1 (1kV) Thermal Resistance (Typical) Maximum Recommended Operating Conditions Supply Voltage, VDD . . . . . . . . . . . . . . . . . . . . . . . . +9V to 14.0VDC Voltage on HS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -1V to 100V Voltage on HS . . . . . . . . . . . . . . .(Repetitive Transient) -5V to 105V Voltage on HB . . VHS +8V to VHS +14.0V and VDD -1V to VDD +100V HS Slew Rate. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <50V/ns JA (°C/W) JC (°C/W) SOIC (Note 5) . . . . . . . . . . . . . . . . . . . 95 N/A EPSOIC (Note 6) . . . . . . . . . . . . . . . . . 40 3.0 QFN (Note 6) . . . . . . . . . . . . . . . . . . . . 37 6.5 DFN (Note 6) . . . . . . . . . . . . . . . . . . . . 40 3.0 Max Power Dissipation at 25oC in Free Air (SOIC, Note 5) . . . . 1.3W Max Power Dissipation at 25oC in Free Air (EPSOIC, Note 6). . 3.1W Max Power Dissipation at 25oC in Free Air (QFN, Note 6). . . . . 3.3W Storage Temperature Range . . . . . . . . . . . . . . . . . . . -65°C to 150°C Junction Temperature Range . . . . . . . . . . . . . . . . . . -55°C to 150°C Lead Temperature (Soldering 10s - SOIC Lead Tips Only). . 300°C For Recommended soldering conditions see Tech Brief TB389. CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the recommended operating conditions of this specification is not implied. NOTES: 3. The HIP2101 is capable of derated operation at supply voltages exceeding 14V. Figure 16 shows the high-side voltage derating curve for this mode of operation. 4. All voltages referenced to VSS unless otherwise specified. 5. JA is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details. 6. JA is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features. JC, the “case temp” is measured at the center of the exposed metal pad on the package underside. See Tech Brief TB379. Electrical Specifications VDD = VHB = 12V, VSS = VHS = 0V, No Load on LO or HO, Unless Otherwise Specified TJ = -40°C TO 125°C TJ = 25°C PARAMETERS SYMBOL TEST CONDITIONS MIN TYP MAX MIN MAX UNITS SUPPLY CURRENTS VDD Quiescent Current IDD LI = HI = 0V - 0.3 0.45 - 0.6 mA VDD Operating Current IDDO f = 500kHz - 1.7 3.0 - 3.4 mA Total HB Quiescent Current IHB LI = HI = 0V - 0.1 0.15 - 0.2 mA Total HB Operating Current IHBO f = 500kHz - 1.5 2.5 - 3 mA HB to VSS Current, Quiescent IHBS VHS = VHB = 114V - 0.05 1.5 - 10 A HB to VSS Current, Operating IHBSO f = 500kHz - 0.7 - - - mA INPUT PINS Low Level Input Voltage Threshold VIL 0.8 1.65 - 0.8 - V High Level Input Voltage Threshold VIH - 1.65 2.2 - 2.2 V Input Pulldown Resistance RI - 200 - 100 500 k VDD Rising Threshold VDDR 7 7.3 7.8 6.5 8 V VDD Threshold Hysteresis VDDH - 0.5 - - - V HB Rising Threshold VHBR 6.5 6.9 7.5 6 8 V HB Threshold Hysteresis VHBH - 0.4 - - - V UNDER VOLTAGE PROTECTION FN9025 Rev 9.00 November 12, 2015 Page 4 of 13 HIP2101 Electrical Specifications VDD = VHB = 12V, VSS = VHS = 0V, No Load on LO or HO, Unless Otherwise Specified (Continued) TJ = -40°C TO 125°C TJ = 25°C PARAMETERS SYMBOL TEST CONDITIONS MIN TYP MAX MIN MAX UNITS BOOT STRAP DIODE Low-Current Forward Voltage VDL IVDD-HB = 100A - 0.45 0.70 - 0.7 V High-Current Forward Voltage VDH IVDD-HB = 100mA - 0.7 0.92 - 1 V Dynamic Resistance RD IVDD-HB = 100mA - 0.8 1 - 1.5 LO GATE DRIVER Low Level Output Voltage VOLL ILO = 100mA - 0.25 0.3 - 0.4 V High Level Output Voltage VOHL ILO = -100mA, VOHL = VDD-VLO - 0.25 0.3 - 0.4 V Peak Pullup Current IOHL VLO = 0V - 2 - - - A Peak Pulldown Current IOLL VLO = 12V - 2 - - - A Low Level Output Voltage VOLH IHO = 100mA - 0.25 0.3 - 0.4 V High Level Output Voltage VOHH IHO = -100mA, VOHH = VHB-VHO - 0.25 0.3 - 0.4 V Peak Pullup Current IOHH VHO = 0V - 2 - - - A Peak Pulldown Current IOLH VHO = 12V - 2 - - - A HO GATE DRIVER Switching Specifications VDD = VHB = 12V, VSS = VHS = 0V, No Load on LO or HO, Unless Otherwise Specified PARAMETERS SYMBOL TEST CONDITIONS TJ = -40°C TO 125°C TJ = 25°C MIN TYP MAX MIN MAX UNITS Lower Turn-Off Propagation Delay (LI Falling to LO Falling) tLPHL - 25 43 - 56 ns Upper Turn-Off Propagation Delay (HI Falling to HO Falling) tHPHL - 25 43 - 56 ns Lower Turn-On Propagation Delay (LI Rising to LO Rising) tLPLH - 25 43 - 56 ns Upper Turn-On Propagation Delay (HI Rising to HO Rising) tHPLH - 25 43 - 56 ns Delay Matching: Lower Turn-On and Upper Turn-Off tMON - 2 13 - 16 ns Delay Matching: Lower Turn-Off and Upper Turn-On tMOFF - 2 13 - 16 ns Either Output Rise/Fall Time tRC,tFC CL = 1000pF - 10 - - - ns Either Output Rise/Fall Time (3V to 9V) tR,tF CL = 0.1F - 0.5 0.6 - 0.8 us Either Output Rise Time Driving DMOS tRD CL = IRFR120 - 20 - - - ns Either Output Fall Time Driving DMOS tFD CL = IRFR120 - 10 - - - ns Minimum Input Pulse Width that Changes the Output tPW - - - - 50 ns Bootstrap Diode Turn-On or Turn-Off Time tBS - 10 - - - ns FN9025 Rev 9.00 November 12, 2015 Page 5 of 13 HIP2101 Pin Descriptions SYMBOL DESCRIPTION VDD Positive Supply to lower gate drivers. De-couple this pin to VSS. Bootstrap diode connected to HB. HB High-Side Bootstrap supply. External bootstrap capacitor is required. Connect positive side of bootstrap capacitor to this pin. Bootstrap diode is on-chip. HO High-Side Output. Connect to gate of High-Side power MOSFET. HS High-Side Source connection. Connect to source of High-Side power MOSFET. Connect negative side of bootstrap capacitor to this pin. HI High-Side input. LI Low-Side input. VSS Chip negative supply, generally will be ground. LO Low-Side Output. Connect to gate of Low-Side power MOSFET. EPAD Exposed pad. Connect to ground or float. The EPAD is electrically isolated from all other pins. Timing Diagrams LI HI HI, LI tHPLH , tLPLH tHPHL, tLPHL LO tMOFF tMON HO, LO HO FIGURE 3. FIGURE 4. Typical Performance Curves 3.500 4.000 3.500 2.500 2.000 1.500 -40°C 1.000 25°C 2.000 1.500 -40°C 1.000 0.500 0.500 0.000 150°C, 125°C 2.500 IHBO (mA) IDDO (mA) 3.000 150°C 125°C 25°C 3.000 0.000 10 30 50 90 200 400 70 FREQUENCY (kHz) 600 800 1000 10 30 50 70 90 200 400 600 800 FREQUENCY (kHz) FIGURE 5B. FIGURE 5A. FIGURE 5. OPERATING CURRENT vs FREQUENCY FN9025 Rev 9.00 November 12, 2015 Page 6 of 13 1000 HIP2101 Typical Performance Curves (Continued) 500 10 VHB = VDD = 9V VOHL, VOHH (mV) 400 T = 150°C T = -40°C T = 125°C T = 25°C IHBSO (mA) 1 0.1 VHB = VDD = 12V VHB = VDD = 14V 300 200 0.01 10 100 FREQUENCY (kHz) 100 -50 1000 100 150 FIGURE 7. HIGH LEVEL OUTPUT VOLTAGE vs TEMPERATURE 7.6 500 VHB = VDD = 9V 7.4 VHB = VDD = 12V 400 VHBR, VDDR (V) VHB = VDD = 14V 300 200 VDDR 7.2 7.0 VHBR 6.8 100 -50 0 50 100 6.6 -50 150 0 TEMPERATURE (°C) 100 150 30 tLPLH, tLPHL, tHPLH, tHPHL (ns) 0.54 0.5 VDDH 0.46 0.42 0.38 VHBH 0.34 0.3 -50 50 TEMPERATURE (°C) FIGURE 9. UNDERVOLTAGE LOCKOUT THRESHOLD vs TEMPERATURE FIGURE 8. LOW LEVEL OUTPUT VOLTAGE vs TEMPERATURE VHBH, VDDH (mV) 50 TEMPERATURE (°C) FIGURE 6. HB TO VSS OPERATING CURRENT vs FREQUENCY VOLL, VOLH (mV) 0 0 50 TEMPERATURE (°C) 100 FIGURE 10. UNDERVOLTAGE LOCKOUT HYSTERESIS vs TEMPERATURE FN9025 Rev 9.00 November 12, 2015 150 tHPHL tHPLH tLPHL 25 tLPLH 20 15 -50 0 50 TEMPERATURE (°C) 100 150 FIGURE 11. PROPAGATION DELAYS vs TEMPERATURE Page 7 of 13 HIP2101 (Continued) 2.5 2.5 2.0 2.0 1.5 1.5 ILO, IHO (A) IHO , ILO (A) Typical Performance Curves 1.0 0.5 0 0.5 0 2 4 6 VHO , VLO (V) 8 10 0 12 FIGURE 12. PEAK PULLUP CURRENT vs OUTPUT VOLTAGE 0 2 4 6 VLO, VHO (V) 8 10 FIGURE 13. PEAK PULLDOWN CURRENT vs OUTPUT VOLTAGE 1 60 0.1 50 0.01 40 IHB vs VHB IDD , IHB (A) FORWARD CURRENT (A) 1.0 0.001 110-4 20 10 110-5 110-6 0.3 IDD vs VDD 30 0 0.4 0.5 0.6 0.7 0.8 0 FORWARD VOLTAGE (V) FIGURE 14. BOOTSTRAP DIODE I-V CHARACTERISTICS 5 10 VDD , VHB (V) 15 FIGURE 15. QUIESCENT CURRENT vs VOLTAGE 120 VHS TO VSS VOLTAGE (V) 100 80 60 40 20 0 12 14 15 VDD TO VSS VOLTAGE (V) 16 FIGURE 16. VHS VOLTAGE vs VDD VOLTAGE FN9025 Rev 9.00 November 12, 2015 Page 8 of 13 12 HIP2101 Revision History The revision history provided is for informational purposes only and is believed to be accurate, but not warranted. Please go to the web to make sure that you have the latest revision. DATE REVISION CHANGE November 12, 2015 FN9025.9 - Updated Ordering Information Table on page 1. - Added Revision History. - Added About Intersil Verbiage. - Updated POD L12.4X4A to latest revision changes are as follow: Updated to new POD format by removing table listing dimensions and moving dimensions onto drawing. Added Typical Recommended Land Pattern. Bottom View changed "3.2 REF" TO "2.5 REF" Typical Recommended Land Pattern changed "3.80" to "3.75" From: Tiebar shown (if present) is a non-functional feature. To: Tiebar shown (if present) is a non-functional feature and may be located on any of the 4 sides (or ends). - Updated POD M8.15 to latest revision changes are as follow: Updated to new POD format by removing table and moving dimensions onto drawing and adding land pattern. Changed in Typical Recommended Land Pattern the following: 2.41(0.095) to 2.20(0.087) 0.76 (0.030) to 0.60(0.023) 0.200 to 5.20(0.205) Changed Note 1 "1982" to "1994" - Updated POD M8.15C to most current version. Removed "u" symbol from drawing (overlaps the "a" on Side View). About Intersil Intersil Corporation is a leading provider of innovative power management and precision analog solutions. The company's products address some of the largest markets within the industrial and infrastructure, mobile computing and high-end consumer markets. For the most updated datasheet, application notes, related documentation and related parts, please see the respective product information page found at www.intersil.com. You may report errors or suggestions for improving this datasheet by visiting www.intersil.com/ask. Reliability reports are also available from our website at www.intersil.com/support. © Copyright Intersil Americas LLC 2004-2015. All Rights Reserved. All trademarks and registered trademarks are the property of their respective owners. For additional products, see www.intersil.com/en/products.html Intersil products are manufactured, assembled and tested utilizing ISO9001 quality systems as noted in the quality certifications found at www.intersil.com/en/support/qualandreliability.html Intersil products are sold by description only. Intersil may modify the circuit design and/or specifications of products at any time without notice, provided that such modification does not, in Intersil's sole judgment, affect the form, fit or function of the product. Accordingly, the reader is cautioned to verify that datasheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see www.intersil.com FN9025 Rev 9.00 November 12, 2015 Page 9 of 13 HIP2101 Package Outline Drawing L12.4x4A 12 LEAD DUAL FLAT NO-LEAD PLASTIC PACKAGE Rev 3, 3/15 2.5 REF 4.00 A PIN #1 INDEX AREA 10X 0.50 BSC 6 B 6 1 12X 0 . 45 6 PIN 1 INDEX AREA 4.00 1.58 0.15 (4X) 12 7 TOP VIEW 0.10 M C A B 0.05 M C 4 12 X 0.25 2.80 BOTTOM VIEW ( 2.80 ) SEE DETAIL "X" 1.00 MAX ( 12 X 0.65 ) 0.10 C BASE PLANE C SEATING PLANE 0.08 C SIDE VIEW ( 3.75) ( 1.58) 0 . 2 REF C ( 10X 0 . 5 ) 0 . 00 MIN. 0 . 05 MAX. ( 12X 0 . 25) DETAIL "X" TYPICAL RECOMMENDED LAND PATTERN NOTES: 1. Dimensions are in millimeters. Dimensions in ( ) for Reference Only. 2. Dimensioning and tolerancing conform to AMSE Y14.5m-1994. 3. Unless otherwise specified, tolerance : Decimal ± 0.05 4. Lead width applies to the metallized terminal and is measured between 0.15mm and 0.30mm from the terminal tip. 5. 6. Tiebar shown (if present) is a non-functional feature and may be located on any of the 4 sides (or ends). The configuration of the pin #1 identifier is optional, but must be located within the zone indicated. The pin #1 identifier may be either a mold or mark feature. FN9025 Rev 9.00 November 12, 2015 Page 10 of 13 HIP2101 Quad Flat No-Lead Plastic Package (QFN) Micro Lead Frame Plastic Package (MLFP) L16.5x5 16 LEAD QUAD FLAT NO-LEAD PLASTIC PACKAGE (COMPLIANT TO JEDEC MO-220VHHB ISSUE C) MILLIMETERS SYMBOL MIN NOMINAL MAX NOTES A 0.80 0.90 1.00 - A1 - - 0.05 - A2 - - 1.00 A3 b 0.28 D 0.33 9 0.40 5, 8 5.00 BSC D1 D2 9 0.20 REF - 4.75 BSC 2.55 2.70 9 2.85 7, 8 E 5.00 BSC - E1 4.75 BSC 9 E2 2.55 e 2.70 2.85 7, 8 0.80 BSC - k 0.25 - - - L 0.35 0.60 0.75 8 L1 - - 0.15 10 N 16 Nd 2 4 3 Ne 4 4 3 P - - 0.60 9 - - 12 9 Rev. 2 10/02 NOTES: 1. Dimensioning and tolerancing conform to ASME Y14.5-1994. 2. N is the number of terminals. 3. Nd and Ne refer to the number of terminals on each D and E. 4. All dimensions are in millimeters. Angles are in degrees. 5. Dimension b applies to the metallized terminal and is measured between 0.15mm and 0.30mm from the terminal tip. 6. The configuration of the pin #1 identifier is optional, but must be located within the zone indicated. The pin #1 identifier may be either a mold or mark feature. 7. Dimensions D2 and E2 are for the exposed pads which provide improved electrical and thermal performance. 8. Nominal dimensions are provided to assist with PCB Land Pattern Design efforts, see Intersil Technical Brief TB389. 9. Features and dimensions A2, A3, D1, E1, P & are present when Anvil singulation method is used and not present for saw singulation. 10. Depending on the method of lead termination at the edge of the package, a maximum 0.15mm pull back (L1) maybe present. L minus L1 to be equal to or greater than 0.3mm. FN9025 Rev 9.00 November 12, 2015 Page 11 of 13 HIP2101 Package Outline Drawing M8.15 8 LEAD NARROW BODY SMALL OUTLINE PLASTIC PACKAGE Rev 4, 1/12 DETAIL "A" 1.27 (0.050) 0.40 (0.016) INDEX 6.20 (0.244) 5.80 (0.228) AREA 0.50 (0.20) x 45° 0.25 (0.01) 4.00 (0.157) 3.80 (0.150) 1 2 8° 0° 3 0.25 (0.010) 0.19 (0.008) SIDE VIEW “B” TOP VIEW 2.20 (0.087) SEATING PLANE 5.00 (0.197) 4.80 (0.189) 1.75 (0.069) 1.35 (0.053) 1 8 2 7 0.60 (0.023) 1.27 (0.050) 3 6 4 5 -C- 1.27 (0.050) 0.51(0.020) 0.33(0.013) SIDE VIEW “A 0.25(0.010) 0.10(0.004) 5.20(0.205) TYPICAL RECOMMENDED LAND PATTERN NOTES: 1. Dimensioning and tolerancing per ANSI Y14.5M-1994. 2. Package length does not include mold flash, protrusions or gate burrs. Mold flash, protrusion and gate burrs shall not exceed 0.15mm (0.006 inch) per side. 3. Package width does not include interlead flash or protrusions. Interlead flash and protrusions shall not exceed 0.25mm (0.010 inch) per side. 4. The chamfer on the body is optional. If it is not present, a visual index feature must be located within the crosshatched area. 5. Terminal numbers are shown for reference only. 6. The lead width as measured 0.36mm (0.014 inch) or greater above the seating plane, shall not exceed a maximum value of 0.61mm (0.024 inch). 7. Controlling dimension: MILLIMETER. Converted inch dimensions are not necessarily exact. 8. This outline conforms to JEDEC publication MS-012-AA ISSUE C. FN9025 Rev 9.00 November 12, 2015 Page 12 of 13 HIP2101 Small Outline Exposed Pad Plastic Packages (EPSOIC) M8.15C N INDEX AREA H 0.25(0.010) M 8 LEAD NARROW BODY SMALL OUTLINE EXPOSED PAD PLASTIC PACKAGE B M E INCHES -B- 1 2 SYMBOL 3 TOP VIEW L SEATING PLANE -A- A D -C- e A1 B 0.25(0.010) M C 0.10(0.004) C A M SIDE VIEW B S MILLIMETERS MAX MIN MAX NOTES A 0.056 0.066 1.43 1.68 - A1 0.001 0.005 0.03 0.13 - B 0.0138 0.0192 0.35 0.49 9 C 0.0075 0.0098 0.19 0.25 - D 0.189 0.196 4.80 4.98 3 E 0.150 0.157 3.811 3.99 4 e h x 45° MIN 0.050 BSC 1.27 BSC - H 0.230 0.244 5.84 6.20 - h 0.010 0.016 0.25 0.41 5 L 0.016 0.035 0.41 0.89 6 8° 0° N 8 0° 8 7 8° - P - 0.126 - 3.200 11 P1 - 0.099 - 2.514 11 Rev. 1 6/05 NOTES: 1 2 1. Symbols are defined in the “MO Series Symbol List” in Section 2.2 of Publication Number 95. 3 2. Dimensioning and tolerancing per ANSI Y14.5M-1982. P1 N P BOTTOM VIEW 3. Dimension “D” does not include mold flash, protrusions or gate burrs. Mold flash, protrusion and gate burrs shall not exceed 0.15mm (0.006 inch) per side. 4. Dimension “E” does not include interlead flash or protrusions. Interlead flash and protrusions shall not exceed 0.25mm (0.010 inch) per side. 5. The chamfer on the body is optional. If it is not present, a visual index feature must be located within the crosshatched area. 6. “L” is the length of terminal for soldering to a substrate. 7. “N” is the number of terminal positions. 8. Terminal numbers are shown for reference only. 9. The lead width “B”, as measured 0.36mm (0.014 inch) or greater above the seating plane, shall not exceed a maximum value of 0.61mm (0.024 inch). 10. Controlling dimension: MILLIMETER. Converted inch dimensions are not necessarily exact. 11. Dimensions “P” and “P1” are thermal and/or electrical enhanced variations. Values shown are maximum size of exposed pad within lead count and body size. FN9025 Rev 9.00 November 12, 2015 Page 13 of 13