DISCRETE SEMICONDUCTORS DATA SHEET BAT56 Schottky barrier diode Preliminary specification File under Discrete Semiconductors, SC01 Philips Semiconductors December 1993 Philips Semiconductors Preliminary specification Schottky barrier diode FEATURES • Low leakage current BAT56 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MAX. UNIT • Low turn-on and high breakdown voltage VR continuous reverse voltage • Ultra-fast switching speed. IF continuous forward current 30 mA VF forward voltage IF = 1 mA 410 mV DESCRIPTION IR reverse current VR = 60 V 200 nA Tj junction temperature 150 °C Cd diode capacitance VR = 1 V 1.6 pF Silicon epitaxial Schottky barrier diode with an integrated guard ring for stress protection. Intended for high speed switching, circuit protection and voltage clamping applications. 60 PIN CONFIGURATION The diode is encapsulated in a SOD123 SMD plastic package. k a MAM058 Top view Fig.1 Simplified outline (SOD123) and symbol. December 1993 2 V Philips Semiconductors Preliminary specification Schottky barrier diode BAT56 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VR continuous reverse voltage − 60 V IF continuous forward current − 30 mA IFRM repetitive peak forward current tp ≤ 1 s; δ ≤ 0.5 − 100 mA IFSM non-repetitive peak forward current tp < 10 ms − 250 mA Tstg storage temperature −65 +150 °C Tamb operating ambient temperature −65 +150 °C Tj junction temperature − 150 °C THERMAL RESISTANCE SYMBOL Rth j-a PARAMETER THERMAL RESISTANCE from junction to ambient; note 1 500 K/W Note 1. Printed-circuit board mounting (SOD123 standard conditions). CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VF PARAMETER CONDITIONS forward voltage MIN. MAX. UNIT IF = 0.1 mA − 330 mV IF = 1 mA − 410 mV IF = 15 mA − 1 V V(BR)R reverse breakdown voltage IR = 10 µA 60 − V IR reverse current VR = 30 V; note 1 − 100 nA VR = 60 V; note 1 − 200 nA Cd diode capacitance VR = 1 V; f = 1 MHz − 1.6 pF Note 1. Pulsed test: tp = 300 µs ; δ = 0.02. December 1993 3 Philips Semiconductors Preliminary specification Schottky barrier diode BAT56 MRA803 10 2 MRA805 10 2 IR (µA) IF (mA) (1) 10 10 (2) 1 1 10 1 (3) 10 1 10 (1) 10 2 0 2 (2) (3) (4) 0.2 0.4 0.6 0.8 10 3 1 0 20 (1) Tamb = 125 °C. (2) Tamb = 85 °C. (1) Tamb = 150 °C. (3) Tamb = 25 °C. (2) Tamb = 85 °C. (4) Tamb = −40 °C. (3) Tamb = 25 °C. Fig.2 Forward current as a function of forward voltage. Cd (pF) 1.5 1 0.5 0 0 20 40 60 80 VR (V) f = 1 MHz. Fig.4 Diode capacitance as a function of reverse voltage. December 1993 60 80 Fig.3 Reverse current as a function of reverse voltage. MRA804 2 40 VR (V) VF (V) 4 Philips Semiconductors Preliminary specification Schottky barrier diode BAT56 PACKAGE OUTLINE 17 o max (2x) andbook, full pagewidth 12 o max (2x) 0.55 0.40 1.35 max 0.19 0.12 0.1 max 0.25 min ,,, ,,, ,,, ,,, ,,, 5o max (2x) 12 o max (2x) cathode colour band 1.7 1.4 0.70 0.50 A 2.85 2.55 3.85 3.55 0.2 M Dimensions in mm. Fig.5 SOD123. December 1993 5 A MBA038 - 2 Philips Semiconductors Preliminary specification Schottky barrier diode BAT56 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. December 1993 6 Philips Semiconductors Preliminary specification Schottky barrier diode BAT56 NOTES December 1993 7 Philips Semiconductors – a worldwide company Argentina: IEROD, Av. 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