Diodes BSS138DW-7 Dual n-channel enhancement mode field effect transistor Datasheet

SPICE MODELS: BSS138DW
BSS138DW
DUAL N-CHANNEL ENHANCEMENT
MODE FIELD EFFECT TRANSISTOR
Features
·
·
·
·
·
·
Low On-Resistance
A
Low Gate Threshold Voltage
D2
Low Input Capacitance
G1
SOT-363
S1
Fast Switching Speed
B C
Available in Lead Free/RoHS Compliant Version (Note 4)
Qualified to AEC-Q101 Standards for High Reliability
S2
G2
Mechanical Data
·
·
D1
G
H
Case: SOT-363
·
·
·
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
K
Moisture Sensitivity: Level 1 per J-STD-020C
J
M
D
L
F
Terminals: Solderable per MIL-STD-202, Method 208
D2
Also Available in Lead Free Plating (Matte Tin Finish
annealed over Alloy 42 leadframe). Please see Ordering
Information, Note 6, on Page 2
·
·
·
·
G1
S1
Terminal Connections: See Diagram
Marking Code (See Page 2): K38
S2
G2
Dim
Min
Max
A
0.10
0.30
B
1.15
1.35
C
2.00
2.20
D
0.65 Nominal
F
0.30
0.40
H
1.80
2.20
J
¾
0.10
K
0.90
1.00
L
0.25
0.40
M
0.10
0.25
a
0°
8°
All Dimensions in mm
D1
Ordering & Date Code Information: See Page 2
Weight: 0.006 grams (approximate)
Maximum Ratings
@ TA = 25°C unless otherwise specified
Characteristic
Symbol
BSS138DW
Units
Drain-Source Voltage
VDSS
50
V
Drain-Gate Voltage (Note 3)
VDGR
50
V
VGSS
±20
V
Gate-Source Voltage
Continuous
Drain Current (Note 1)
Continuous
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Electrical Characteristics
Characteristic
ID
200
mA
Pd
200
mW
RqJA
625
°C/W
Tj, TSTG
-55 to +150
°C
@ TA = 25°C unless otherwise specified
Symbol
Min
Typ
Max
Unit
Test Condition
Drain-Source Breakdown Voltage
BVDSS
50
75
¾
V
VGS = 0V, ID = 250mA
Zero Gate Voltage Drain Current
IDSS
¾
¾
0.5
µA
VDS = 50V, VGS = 0V
Gate-Body Leakage
IGSS
¾
¾
±100
nA
VGS = ±20V, VDS = 0V
OFF CHARACTERISTICS (Note 2)
ON CHARACTERISTICS (Note 2)
VGS(th)
0.5
1.2
1.5
V
VDS = VGS, ID = 250mA
RDS (ON)
¾
1.4
3.5
W
VGS = 10V, ID = 0.22A
gFS
100
¾
¾
mS
Input Capacitance
Ciss
¾
¾
50
pF
Output Capacitance
Coss
¾
¾
25
pF
Reverse Transfer Capacitance
Crss
¾
¾
8.0
pF
Turn-On Delay Time
tD(ON)
¾
¾
20
ns
Turn-Off Delay Time
tD(OFF)
¾
¾
20
ns
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
VDS =25V, ID = 0.2A, f = 1.0KHz
DYNAMIC CHARACTERISTICS
VDS = 10V, VGS = 0V
f = 1.0MHz
SWITCHING CHARACTERISTICS
Note:
1.
2.
3.
4.
VDD = 30V, ID = 0.2A,
RGEN = 50W
Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
Short duration test pulse used to minimize self-heating effect.
RGS £ 20KW.
No purposefully added lead.
DS30203 Rev. 8 - 2
1 of 5
www.diodes.com
BSS138DW
ã Diodes Incorporated
Ordering Information (Note 5)
Notes:
5.
6.
Device
Packaging
Shipping
BSS138DW-7
SOT-363
3000/Tape & Reel
For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
For Lead Free/RoHS Compliant version part number, please add "-F" suffix to the part number above. Example: BSS138DW-7-F.
Marking Information
YM
K38
K38 = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
YM
K38
Date Code Key
Year
1998
1999
2000
2001
2002
2003
2004
2005
2006
2007
2008
2009
Code
J
K
L
M
N
P
R
S
T
U
V
W
Month
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
0.6
VGS = 3.5V
ID, DRAIN-SOURCE CURRENT (A)
Tj = 25° C
0.5
VGS = 3.25V
0.4
VGS = 3.0V
0.3
VGS = 2.75V
0.2
VGS = 2.5V
0.1
0
0
2
1
3
5
4
6
7
8
9
10
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Drain-Source Current vs. Drain-Source Voltage
ID, DRAIN-SOURCE CURRENT (A)
0.8
-55° C
VDS = 1V
0.7
0.6
25° C
0.5
150° C
0.4
0.3
0.2
0.1
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Transfer Characteristics
DS30203 Rev. 8 - 2
2 of 5
www.diodes.com
BSS138DW
RDS(ON), NORMALIZED DRAIN-SOURCE ON RESISTANCE (W)
2.45
2.25
2.05
VGS = 10V
ID = 0.5A
1.85
1.65
1.45
VGS = 4.5V
ID = 0.075A
1.25
1.05
0.85
0.65
-55
45
-5
95
145
Tj, JUNCTION TEMPERATURE (°C)
Fig. 3 Drain-Source On Resistance vs. Junction Temperature
VGS(th), GATE THRESHOLD VOLTAGE (V)
2
1.8
1.6
ID = 1.0mA
1.4
1.2
1
0.8
0.6
0.4
0.2
0
-55 -40 -25 -10 5
20 35 50 65 80 95 110 125 140
RDS(ON), DRAIN-SOURCE ON RESISTANCE (W)
Tj, JUNCTION TEMPERATURE (°C)
Fig. 4 Gate Threshold Voltage vs. Junction Temperature
8
7
150° C
VGS = 2.5V
6
5
25° C
4
3
-55° C
2
1
0
0
0.02
0.04
0.06
0.08 0.1
0.12
0.14
0.16
ID, DRAIN CURRENT (A)
Fig. 5 Drain-Source On Resistance vs. Drain Current
DS30203 Rev. 8 - 2
3 of 5
www.diodes.com
BSS138DW
9
8
VGS = 2.75V
7
150° C
6
5
4
25° C
3
2
-55° C
1
0
0.1
0.05
0
0.15
0.25
0.2
ID, DRAIN CURRENT (A)
Fig. 6 Drain-Source On Resistance vs. Drain Current
6
VGS = 4.5V
5
150° C
4
3
2
25° C
1
-55° C
0
0
0.05 0.1
0.15
0.2
0.25
0.3
0.35
0.45
0.4
0.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 7 Drain-Source On Resistance vs. Drain Current
3.5
VGS = 10V
3
150° C
2.5
2
1.5
25° C
1
-55° C
0.5
0
0
0.05 0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.45
0.5
ID, DRAIN CURRENT (A)
Fig. 8 Drain-Source On Resistance vs. Drain Current
DS30203 Rev. 8 - 2
4 of 5
www.diodes.com
BSS138DW
ID, DIODE CURRENT (A)
1
0.1
150° C
-55° C
0.01
25° C
0.001
0
0.2
0.4
0.6
0.8
1.2
1
VSD, DIODE FORWARD VOLTAGE (V)
Fig. 9 Body Diode Current vs. Body Diode Voltage
100
C, CAPACITANCE (pF)
VGS = 0V
f = 1MHz
CiSS
10
COSS
CrSS
1
0
5
10
15
20
25
30
VDS, DRAIN SOURCE VOLTAGE (V)
Fig. 10 Capacitance vs. Drain Source Voltage
DS30203 Rev. 8 - 2
5 of 5
www.diodes.com
BSS138DW
Similar pages