HLDD2N60 N-Channel Enhancement Mode Power MOSFET Description Features The HLDD2N60 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Application □ □ □ Power switchingapplication Hard switched and high frequencycircuits □ VDS =600V,ID =2A □ RDS(ON)：5Ω@VGS=10V □ Low gatecharge. □ Green deviceavailable. □ AdvancedhighcelldenitytrenchtechnologyforultraRDS(ON). □ Excellentpackageforgoodheatdissipation. Uninterruptible powersupply Marking and pin assignment N-Channel MOSFET Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS ±30 V 2 A ID Drain Current-Continuous 1.3 A Pulsed Drain Current IDM 6 A Maximum Power Dissipation PD 130 W 0.43 W/℃ EAS 120 TJ,TSTG -55 To 175 mJ ℃ Drain Current-Continuous(TC=100℃) ID (100℃) Derating factor Single pulse avalanche energy (Note 5) Operating Junction and Storage Temperature Range Thermal Characteristic (Note 2) Thermal Resistance,Junction-to-Case www.hldic.com RθJC Page 1 0.43 ℃/W 2017 . H1.0 HLDD2N60 Package Marking and Ordering Information Part NO. HLDD2N60 Marking Package HLDD2N60 TO-252 Electrical Characteristics (TC=25℃unless otherwise noted) Parameter Symbol Condition Min Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA Zero Gate Voltage Drain Current IDSS VDS=600V,VGS=0V - Gate-Body Leakage Current IGSS VGS=±30V,VDS=0V - Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 2 Drain-Source On-State Resistance RDS(ON) Typ Max Unit - - V - 10 μA - ±100 nA Off Characteristics On Characteristics 600 (Note 3) Forward Transconductance Dynamic Characteristics VGS=10V, ID=1A - VGS=4.5V, ID=0A gFS VDS=40V,ID=1A - - 4 3.8 5 - 2.5 - V Ω S (Note4) - 380 490 PF - 35 46 PF Crss - 7.6 9.9 PF Turn-on Delay Time td(on) - 16 40 nS Turn-on Rise Time tr VDD=300V,ID=2A, - 50 110 nS td(off) RG=2.5Ω - 40 90 nS - 40 90 nS - 15.3 nC - 1.8 nC - 7.2 nC Input Capacitance Clss Output Capacitance Coss Reverse Transfer Capacitance Switching Characteristics VDS=25V,VGS=0V , F=1.0MHz (Note 4) Turn-Off Delay Time Turn-Off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS=480V,ID=2A , VGS=10V Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) VSD Diode Forward Current (Note 2) IS Reverse Recovery Time VGS=0V,IS=2A VGS=0V,IS=2A trr Reverse Recovery Charge Qrr Forward Turn-On Time ton - dIf/dt=100A/us - - V 2 A - 250 - nS - 1.31 - nC Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: 1：Pulse width limited by maximum junctiontemperature 2：L=55mH, IBASB=2.0A, VBDDB=50V, RBGB=25 Ω,StartingTBJB=25℃ 3：IBSDB ≤2A,di/dt ≤300A/μs,VDD≤BVBDSSB, Starting TBJB=25℃ 4：Pulse Test：Pulse Width ≤300μs,Duty Cycle≤2％ 5：Essentially independent of operating temperature www.hldic.com Page 2 2017 . H1.0 HLDD2N60 ELECTRICAL CHARACTERISTICS (curves) Transfer Characteristics On-Region Characteristics 10 VGS 15V 10V 8V 7V 6.5V 6V 5.5V Bottom 5V 150℃ ID [A] ID [A ] Top 1 1 1. Notes 250μs： pulse test 2. TC=25℃ 0.1 1 Notes： 1.250μs pulse test 2.VDS=40V 25℃ 0.1 10 2 4 6 VDS[V] 8 10 VGS [V] On-Resistance Variation vs. Drain Current and Gate Voltage Body Diode Forward Voltage Variation vs. Source Current and Temperature 7.5 6.5 VGS=10V 6.0 I DR [A] RDS(on) [ Ω ] 7.0 25℃ 1 5.5 VGS=20V 150℃ 5.0 4.5 Notes： 1. 250μs pulse test 2. VGS=0V Note ：Tj=25 ℃ 4.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0.1 0.4 0.5 0.6 0.7 0.8 ID[A] 0.9 1.0 1.1 1.2 1.3 V S D [V] Capacitance Characteristics Gate Charge Characteristics 12 VDS=480V 10 VGS Gate Source Voltage[V ] VDS=300V 8 VDS=120V 6 4 2 0 0 2 4 6 8 10 12 14 16 18 Qg Toltal Gate Charge [nC] ELECTRICAL CHARACTERISTICS (curves) www.hldic.com Page 3 2017 . H1.0 HLDD2N60 Breakdown Voltage Variation vs. Temperature On-Resistance Variation vs. Temperature 3.0 1.2 2.5 RDS(on)(Normalized) BVDSS(Normalized) 1.1 1.0 1. VGS=0V Notes： 2. ID=250μA 0.9 2.0 1.5 o es： 1.0 N 0.5 1. V GS=10V 2. I D =1.0 A 0.8 -75 -50 -25 0 25 50 75 100 125 150 Tj [℃] 0.0 -75 -50 -25 0 25 50 75 100 125 150 Tj [ ℃] Maximum Safe Operating Area For JCS2N60V/R/C Maximum Safe Operating Area For JCS2N60F Maximum Drain Current vs. Case Temperature 2.0 1.8 ID Drain Current [A ] 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 25 50 75 100 125 150 TC Case Temperature [℃] www.hldic.com Page 4 2017 . H1.0 HLDD2N60 ELECTRICAL CHARACTERISTICS (curves) Transient Thermal Response Curve For JCS2N60V/R Transient Thermal Response Curve For JCS2N60C Transient Thermal Response Curve For JCS2N60F www.hldic.com Page 5 2017 . H1.0 HLDD2N60 TO-252 Package Information www.hldic.com Page 6 2017 . H1.0