Surface Mount Bridge Rectifier MB05F --- MB10F FEATURES •Ideal for printed circuit board Reliable low cost construction utilizing molded plastic technique .193(4.9) .177(4.5) results in inexpensive product •Rating to 1000V PRV ~ ~ + - •High surge current capability •Small size simple installation .031(0.8) .019(0.5) Mechanical Data ht .065(1.7) .059(1.5) tp Dimensions in inches and (millimeters) :/ /w MB05 ww Maximum Recurrent Peak Reverse Voltage VRRM F 50 .m VRMS Maximum DC Blocking Voltage VDC @TA=40 I(AV) 50 VF Tyical Junction Capacitance Tyical Thermal Resistance Operating TemperatureRange Storage Temperature Range MAKO Semiconductor Co., Limited 600 800 F1000 V 70 140 280 420 560 700 V 100 200 400 600 800 1000 V 0.8 A 35 A V IR 1.0 / @TJ=25 @TJ=100 400 i. Super Imposed on Rated Load(JEDEC Method) Maximum DC Reverse Current 200 hk IFSM Peak Forward Voltage at 0.8A DC 100 em Peak Forward Surage Current 8.3ms Single Half Sine-Wave MB1F MB2F MB4F MB6F MB8F MB10F Unit os Maximum Average Forward 35 unless otherwise noted) ak Maximum RMS Voltage at Rated DC Bolcking Voltage MB-F .008(0.2) Electrical Characteristics (Ta=25 Characteristic Rectified Current .043(1.1) .027(0.7) .067(1.7) .057(1.3) • Mounting Position: Any Maximum Ratings and .169(4.3) .153(3.9) .043(1.1) .023(0.6) .014(.35) .006(.15) .106(2.7) .09(2.3) • Terminals: Plated leads solderable per MIL-STD-750,Method 2026 .275(7.0)MAX .067(1.7) .057(1.3) 5.0 500 CJ 15 RθJC 75 TJ -55 to +150 TSTG -55 to +150 4008-378-873 uA pF /W www.makosemi.hk Page:P2-P1 Surface Mount Bridge Rectifier MB05F --- MB10F CHARACTERISTIC CURVES FIG.3 - TYPICAL FORWARD VOLTAGE CHARACTERISTICS PER LEG INSTANTANEOUS FORWARD CURRENT (A) 0.8 Aluminum Substrate 0.7 0.6 0.5 Glass Epoxy P.C.B. 0.4 0.3 0.2 0.1 Resistive or Inductive Load 0 0 20 40 ht AVERAGE FORWARD RECTIFIED CURRENT.(A) FIG.1 - DERATING CURVE OUTPUT RECTIFIED CURRENT FOR 60 80 100 120 140 10 TJ =1500C TJ=250C 1 0.1 0 0.01 0.2 TJ=25 C PulseWidth=300 s 1% Duty Cycle 0.4 0.6 0.8 1.0 1.2 1.4 1.6 INSTANTANEOUS FORWARD VOLTAGE.(V) 160 0 AMBIENT TEMPERATURE.( C) 0 Ta=40 C Single Half Sine-Wave (JEDEC Method) 30 ww 25 f=60Hz 20 15 .m f=50Hz 10 1 Cycle 50 1 10 NUMBER OF CYCLES FIG.4-TYPICAL REVERSE LEAKAGE CHARACTERISTICS PER LEG 100 0 100 TJ=125 C 10 1 0.1 TJ=250C 0.01 os 0 ak PEAK FORWARD SURGE CURRENT,(A) /w 35 INSTANTANEOUS REVERSE LEAKAGE CURRENT,(uA) :/ tp FIG.2-MAXIMUN NON-REPETITIVE PEAK FORWARD SURGE CURRENT PER LEG 0 20 40 60 80 100 i. em PERCENT OF RATED PEAK REVERSE VOLTAGE(%) FIG.5-TYPICAL JUNCTION CAPACITANCE CAPACITANCE(PF) / hk 100 10 TJ=25℃ ，f=1MHZ 1.0 1 4 10.0 REVERSE VOLTAGE， VOLTS MAKO Semiconductor Co., Limited 4008-378-873 100 www.makosemi.hk Page:P2-P2