AP1A003P
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Rg & UIS Test
D
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
30V
RDS(ON)
2.1mΩ
ID
G
▼ RoHS Compliant & Halogen-Free
BVDSS
4
120A
S
Description
AP4604 series
AP1A003
seriesare
are from
from Advanced
Advanced Power
Power innovated design
and silicon process technology to achieve the lowest possible
on-resistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide
range of power applications.
The TO-220 package is widely preferred for all commercialindustrial
The
TO-220
through
packagehole
is widely
applications.
preferred The
for alllow
commercialthermal
resistance and
industrial
through
low package
hole applications.
cost contribute
The
to the
lowworldwide
thermal
popular package.
resistance
and low package cost contribute to the worldwide
popular package.
G
D
TO-220(P)
S
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TC=25℃
ID@TC=100℃
ID@TC=25℃
.
Parameter
PD@TC=25℃
Total Power Dissipation
PD@TA=25℃
Total Power Dissipation
V
V
189
A
4
133
A
4
120
A
520
A
125
W
2.4
W
125
mJ
1
Pulsed Drain Current
30
+20
Drain Current, VGS @ 10V (Silicon Limited)
IDM
Units
4
Drain Current, VGS @ 10V (Silicon Limited)
Drain Current, VGS @ 10V
Rating
3
EAS
Single Pulse Avalanche Energy
TSTG
Storage Temperature Range
-55 to 175
℃
TJ
Operating Junction Temperature Range
-55 to 175
℃
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
1.2
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
62
℃/W
Data and specifications subject to change without notice
1
201609201
AP1A003P
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Min.
Typ.
Max. Units
VGS=0V, ID=250uA
30
-
-
V
VGS=10V, ID=40A
-
-
2.1
mΩ
VGS=4.5V, ID=30A
-
-
3
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=5V, ID=40A
-
195
-
S
IDSS
Drain-Source Leakage Current
VDS=24V, VGS=0V
-
-
10
uA
IGSS
Gate-Source Leakage
VGS= +20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=30A
-
83
133
nC
Qgs
Gate-Source Charge
VDS=24V
-
17
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
41
-
nC
td(on)
Turn-on Delay Time
VDS=15V
-
14
-
ns
tr
Rise Time
ID=40A
-
70
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
100
-
ns
-
ns
tf
Fall Time
VGS=10V
-
120
Ciss
Input Capacitance
VGS=0V
-
7300 11680
pF
Coss
Output Capacitance
VDS=15V
Crss
Rg
-
1320
-
pF
Reverse Transfer Capacitance
.
f=1.0MHz
-
675
-
pF
Gate Resistance
f=1.0MHz
-
1.5
3
Ω
Min.
Typ.
IS=40A, VGS=0V
-
-
1.2
V
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=40A, VGS=0V,
-
26
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
14
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
o
3.Starting Tj=25 C , VDD=30V , L=0.1mH , RG=25Ω
4.Package limitation current is 120A .
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP1A003P
600
240
T C = 25 o C
400
10V
7.0V
6.0V
5.0V
V G =4.0V
200
ID , Drain Current (A)
500
ID , Drain Current (A)
T C =175 o C
10V
7.0V
6.0V
5.0V
V G =4.0V
300
200
160
120
80
40
100
0
0
0
1
2
3
0
4
1
2
3
4
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
2
I D =30A
I D =40A
V G =10V
T C =25 o C
1.9
1.8
.
1.7
Normalized RDS(ON)
RDS(ON) (mΩ)
1.6
1.2
0.8
1.6
0.4
1.5
2
4
6
8
-100
10
0
100
200
T j , Junction Temperature ( o C)
V GS Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2
100
I D =1mA
Normalized VGS(th)
1.6
IS(A)
10
T j =175 o C
T j =25 o C
1.2
0.8
1
0.4
0.1
0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-100
0
100
200
T j ,Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP1A003P
f=1.0MHz
12000
I D =30A
V DS =24V
10000
8
8000
C (pF)
VGS , Gate to Source Voltage (V)
10
6
C iss
6000
4
4000
2
2000
C oss
C rss
0
0
0
40
80
120
1
160
5
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
13
17
21
25
29
33
37
Fig 8. Typical Capacitance Characteristics
1000
Operation in this area
limited by RDS(ON)
10
100us
1
0.1
1ms
T C =25 o C
Single Pulse
.
Normalized Thermal Response (Rthjc)
1
100
ID (A)
9
V DS ,Drain-to-Source Voltage (V)
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
PDM
t
0.01
T
Single Pulse
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
DC
0.01
0.01
0.01
0.1
1
10
100
0.00001
V DS , Drain-to-Source Voltage (V)
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
240
VDS
90%
ID , Drain Current (A)
200
160
Limited by package
120
10%
VGS
80
40
td(on) tr
td(off) tf
0
25
75
125
T C , Case Temperature (
175
o
C)
Fig 11. Drain Current v.s. Case
Temperature
Fig 12. Switching Time Waveform
4
AP1A003P
8
160
o
PD, Power Dissipation(W)
T j =25 C
RDS(ON) (mΩ)
6
4
4.5V
V GS =10V
2
120
80
40
0
0
0
20
40
60
80
100
0
120
50
100
150
200
T C , Case Temperature( o C)
I D , Drain Current (A)
Fig 13. Typ. Drain-Source on State
Resistance
Fig 14. Total Power Dissipation
200
V DS =5V
ID , Drain Current (A)
160
120
.
80
T j =175 o C
T j =25 o C
40
T j = -55 o C
0
0
1
2
3
4
5
V GS , Gate-to-Source Voltage (V)
Fig 15. Transfer Characteristics
5
AP1A003P
MARKING INFORMATION
Part Number
1A003
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
.
6