Kexin DTDG23YP Digital transistor Datasheet

Transistors
SMD Type
Digital Transistors
DTDG23YP
Features
NPN Epitaxial Planar Silicon Transistor
(with built-in resistors and zener diode).
High DC Current Gain.
Built-in Zener Diode Gives Strong Protection
Against Reverse Surge By L-load (an inductive load).
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Supply Voltage
VCC
60 10
V
Input Voltage
VIN
-6 to +40
V
IC
1
ICP *1
2
Collector Current
Power Dissipation
PD
*2
1.5
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
A
W
*1 Pw 10ms, Duty cycle 2%
*2 When mounted on 40x40x0.7mm ceramic board.
Electrical Characteristics Ta = 25
Parameter
Input Voltage
Output Voltage
Input Current
Output Current
Symbol
Testconditons
Min
Typ
Max
Unit
VI(off)
VCC = 5V , IO = 100 A
VI(on)
VO = 0.4V , IO = 100mA
VO(on)
IO/II = 500mA/5mA
0.4
V
VI = 5V
3.6
mA
VCC = 40V , VI = 0V
0.5
A
II
IO(off)
VO = 2V , IO = 500mA
0.3
V
2
300
DC Current Gain
GI
Input Resistance
R1
1.54
2.2
2.86
k
Emitter-base Resistance
R2
7
10
13
k
Transistion Frequency
fT *
VCE = 5V , IE = -0.1A , f = 30MHz
80
MHz
* Characteristics of built-in transistor
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Transistors
SMD Type
DTDG23YP
Marking
Marking
E02
Equivalent Circuit
Electrical Characteristics Curves
2
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Transistors
SMD Type
DTDG23YP
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3
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