PD - 94600 IRF5NJZ34 55V, N-CHANNEL HEXFET® POWER MOSFET SURFACE MOUNT (SMD-0.5) Product Summary Part Number BVDSS RDS(on) ID IRF5NJZ34 55V 0.04Ω 22A* Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. These devices are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits. SMD-0.5 Features: n n n n n n n n Low RDS(on) Avalanche Energy Ratings Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Package Mounting Surface Temperature Weight Units 22* 16 88 40 0.32 ±20 43 22 4.0 1.8 -55 to 150 A W W/°C V mJ A mJ V/ns o 300 (for 5 s) 1.0 C g * Current is limited by package For footnotes refer to the last page www.irf.com 1 02/07/03 IRF5NJZ34 Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Min Drain-to-Source Breakdown Voltage ∆BV DSS/∆T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current Typ Max Units 55 — — V — 0.054 — V/°C — — 0.04 Ω 2.0 8.0 — — — — — — 4.0 — 25 250 V S( ) Test Conditions VGS = 0V, ID = 250µA Reference to 25°C, I D = 250µA VGS = 10V, ID = 16A ➃ VDS = VGS, ID = 250µA VDS = 10V, IDS = 16A ➃ VDS = 55V ,VGS=0V VDS = 44V, VGS = 0V, TJ =125°C VGS = 20V VGS = -20V VGS =10V, ID = 22A VDS = 44V Ω Parameter BVDSS µA IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance — — — — — — — — — — — — — — — — — — — 4.0 100 -100 34 7.0 14 12 28 30 30 — Ciss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 695 252 100 — — — nA nC VDD = 28V, ID = 22A, VGS =10V, RG = 13Ω ns Measured from the center of drain pad to center of source pad nH pF VGS = 0V, VDS = 25V f = 1.0MHz Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units IS ISM Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) ➀ — — — — 22* 88 A VSD trr Q RR Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge — — — — — — 1.6 86 200 V nS nC ton Forward Turn-On Time Test Conditions Tj = 25°C, IS = 22A, VGS = 0V ➃ Tj = 25°C, IF = 22A, di/dt ≤ 100A/µs VDD ≤ 25V ➃ Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. * Current is limited by package Thermal Resistance Parameter RthJC Junction-to-Case Min Typ Max — — 3.13 Units Test Conditions °C/W Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page 2 www.irf.com IRF5NJZ34 1000 VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 100 100 10 4.5V 20µs PULSE WIDTH Tj = 25°C 1 10 4.5V 20µs PULSE WIDTH Tj = 150°C 1 0.1 1 10 100 0.1 VDS , Drain-to-Source Voltage (V) 2.0 T J = 150°C 10 VDS = 25V 15 20µs PULSE WIDTH 1.0 6 7 8 9 10 11 VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 12 R DS(on) , Drain-to-Source On Resistance (Normalized) T J = 25°C 5 10 100.0 Fig 2. Typical Output Characteristics 100 4 1 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics ID , Drain-to-Source Current ( Α) VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP ID , Drain-to-Source Current (A) ID, Drain-to-Source Current (A) 1000 ID = 22A 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( °C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRF5NJZ34 1200 ID = 22A VGS, Gate-to-Source Voltage (V) Crss = Cgd Coss = Cds + Cgd 1000 C, Capacitance (pF) 12 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Ciss 800 600 Coss 400 200 Crss 0 1 10 VDS= 11V 8 4 0 100 0 VDS , Drain-to-Source Voltage (V) 4 8 12 16 20 24 QG Total Gate Charge (nC) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 1000 ID, Drain-to-Source Current (A) ISD , Reverse Drain Current ( Α) VDS = 44V VDS = 27V OPERATION IN THIS AREA LIMITED BY RDS(on) 100 T J = 150°C T J = 25°C 10 1ms 1 0.1 0.4 0.6 0.8 1.0 1.2 1.4 VSD , Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 10ms Tc = 25°C Tj = 150°C Single Pulse VGS = 0V 1.0 100µs 10 1.6 1 10 100 1000 VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRF5NJZ34 30 RD VDS LIMITED BY PACKAGE VGS 25 D.U.T. I D , Drain Current (A) RG + -VDD 20 VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 15 10 Fig 10a. Switching Time Test Circuit VDS 5 90% 0 25 50 75 100 125 150 TC , Case Temperature ( ° C) 10% VGS td(on) Fig 9. Maximum Drain Current Vs. Case Temperature tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 10 D = 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) P DM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.01 0.00001 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRF5NJZ34 1 5V D R IV E R L VDS D .U .T. RG + - VD D IA S 2V0GS V tp 0 .0 1 Ω Fig 12a. Unclamped Inductive Test Circuit A EAS , Single Pulse Avalanche Energy (mJ) 80 TOP BOTTOM 60 ID 10A 14A 22A 40 20 0 25 50 75 100 125 150 Starting TJ , Junction Temperature ( ° C) V (B R )D SS tp Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Current Regulator Same Type as D.U.T. Fig 12b. Unclamped Inductive Waveforms 50KΩ QG 12V .2µF .3µF 10V QGS QGD + V - DS VGS VG 3mA Charge Fig 13a. Basic Gate Charge Waveform 6 D.U.T. IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit www.irf.com IRF5NJZ34 Footnotes: Repetitive Rating; Pulse width limited by ISD ≤ 22A, di/dt ≤ 270 A/µs, maximum junction temperature. VDD = 25 V, Starting TJ = 25°C, L=0.19mH Peak IAS = 22A, RG= 25Ω Pulse width ≤ 300 µs; Duty Cycle ≤ 2% VDD ≤ 55V, TJ ≤ 150°C Case Outline and Dimensions — SMD-0.5 PAD ASSIGNMENTS IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 02/03 www.irf.com 7