LINER LTC5533 300mhz to 11ghz precision dual rf power detector Datasheet

LTC5533
300MHz to 11GHz Precision
Dual RF Power Detector
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DESCRIPTIO
FEATURES
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Two Independent Temperature Compensated
Schottky Diode RF Peak Detectors
45dB Channel-to-Channel Isolation at 2GHz
Wide Input Frequency Range: 300MHz to 11GHz*
Wide Input Power Range: –32dBm to 12dBm
Buffered Detector Outputs with Gain of 2x
Adjustable VOUT Starting Voltage
Wide VCC Range of 2.7V to 6V
Low Operating Current: <500µA/Channel
Low Shutdown Current: <2µA/Channel
4mm × 3mm DFN Package
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APPLICATIO S
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The LTC®5533 is a dual channel RF power detector for RF
applications operating in the 300MHz to 11GHz range.
Two independent temperature compensated Schottky diode peak detectors and buffer amplifiers are combined in
a small 4mm × 3mm DFN package.
The RF input voltage is peak detected using on-chip
Schottky diodes. The detected voltage is buffered and
supplied to the VOUT pins. A power saving shutdown mode
reduces current to less than 2µA/channel. The initial
output starting voltages can be precisely adjusted using
the VOS pins.
The LTC5533 operates with input power levels from
–32dBm to 12dBm.
, LTC and LT are registered trademarks of Linear Technology Corporation.
All other trademarks are the property of their respective owners.
*Higher frequency operation is achievable with reduced performance. Consult factory for more
information.
PA Forward and Reverse Power Monitor
Dual PA Transmit Power Control
802.11a, b, g, 802.15, WiMAX
PA Linearization
Fixed Wireless Access
RF Power Alarm
Envelope Detector
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TYPICAL APPLICATIO
Output Voltage vs RF Input Power
300MHz to 11GHz RF Power Detectors
3600
VCC
VCC1
100pF
VOS1
0.1µF
100pF
VOS2
GND1
VOS1
SHDN1
VCC2
RFIN2
VOUT2
GND2
39pF
RF2 INPUT
SHDN2
DISABLE ENABLE
5533 TA01
(EXPOSED PAD)
3200
RF1 INPUT
RFIN1
VOUT1
VOS2
39pF
VOUT OUTPUT VOLTAGE (mV)
LTC5533
2800
2400
2000
1600
1200
VCC = 3.6V
VOS = 0V
TA = 25°C
4GHz
1GHz
5GHz
500MHz
6GHz
8GHz
11GHz
800
400
10GHz
9GHz
0
–28 –24 –20 –16 –12 –8 –4 0 4
RF INPUT POWER (dBm)
8
12
5533 TA02
5533f
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LTC5533
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ABSOLUTE
AXI U RATI GS
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PACKAGE/ORDER I FOR ATIO
(Note 1)
VCC1, VCC2, VOUT1, VOUT2, VOS1, VOS2 ....... –0.3V to 6.5V
RFIN1, RFIN2 Voltage ........................(VCC ± 1.25V) to 7V
RFIN1, RFIN2 Power (RMS) ................................. 12dBm
SHDN1, SHDN2 Voltage to GND .. –0.3V to (VCC + 0.3V)
IVOUT1, IVOUT2 ........................................................ 5mA
Operating Temperature Range (Note 2) .. – 40°C to 85°C
Maximum Junction Temperature ......................... 125°C
Storage Temperature Range ................ – 65°C to 150°C
ORDER PART
NUMBER
TOP VIEW
VCC1
1
12 RFIN1
VOUT1
2
11 GND1
VOS1
3
VCC2
4
9
RFIN2
VOUT2
5
8
GND2
VOS2
6
7
SHDN2
LTC5533EDE
10 SHDN1
13
DFN PART
MARKING
DE12 PACKAGE
12-LEAD (4mm × 3mm) PLASTIC DFN
TJMAX = 125°C, θJA = 40°C/W
EXPOSED PAD IS GND (PIN 13)
MUST BE SOLDERED TO PCB
5533
Consult LTC Marketing for parts specified with wider operating temperature ranges.
ELECTRICAL CHARACTERISTICS
The ● denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at TA = 25°C. VCC = 3.6V, SHDN = VCC = HI, SHDN = 0V = LO, RF Input Signal is Off,
VOS = 0V and SHDN = HI unless otherwise noted. Limits below are for one channel unless otherwise noted.
PARAMETER
CONDITIONS
MIN
●
VCC Operating Voltage
TYP
MAX
0.45
0.7
2.7
6
UNITS
V
IVCC Operating Current
IVOUT = 0mA
●
IVCC Shutdown Current
SHDN = LO
●
0.01
2
µA
VOUT Start Voltage (No RF Input)
RLOAD = 2k, VOS = 0V
SHDN = LO
●
85
110 to 150
1
170
mV
mV
VOUT Output Current
VOUT = 1.75V, VCC = 2.7V, ∆VOUT < 10mV
●
2
4
VOUT Enable Time
SHDN = LO to HI, CLOAD = 33pF, RLOAD = 2k
●
VOUT Bandwidth
CLOAD = 33pF, RLOAD = 2k (Note 4)
VOUT Load Capacitance
(Note 6)
8
mA
20
2
●
mA
µs
MHz
33
pF
VOUT Slew Rate
VRFIN = 1V Step, CLOAD = 33pF, RLOAD = 2k (Note 3)
3
V/µs
VOUT Noise
VCC = 3V, Noise BW = 1.5MHz, 50Ω RF Input Termination
1
mVP-P
VOUT Shutdown Resistance
Resistance Measured to Ground
280
VOS Voltage Range
●
0
–0.5
VOS Input Current
VOS = 1V
●
SHDN Voltage, Chip Disabled
VCC = 2.7V to 6V
●
SHDN Voltage, Chip Enabled
VCC = 2.7V to 6V
●
SHDN Input Current
SHDN = 3.6V
●
RFIN Input Frequency Range
RFIN Input Power Range
RF Frequency = 300MHz to 7GHz (Note 5, 6) VCC = 2.7V to 6V
Ω
1
V
0.5
µA
0.35
V
36
µA
1.4
V
22
300 to 11000
MHz
–32 to 12
dBm
RFIN AC Input Resistance
f = 1000MHz, Pin = –25dBm
220
Ω
RFIN Input Shunt Capacitance
f = 1000MHz, Pin = –25dBm
0.65
pF
Channel to Channel Isolation
f = 2GHz
45
dB
Note 1: Absolute Maximum Ratings are those values beyond which the life
of a device may be impaired.
Note 2: Specifications over the –40°C to 85°C operating temperature
range are assured by design, characterization and correlation with
statistical process controls.
Note 3: The rise time at VOUT is measured between 1.3V and 2.3V.
Note 4: Bandwidth is calculated based on the 10% to 90% rise time
equation: BW = 0.35/rise time.
Note 5: RF performance is production tested at 1800MHz
Note 6: Guaranteed by design.
5533f
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LTC5533
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TYPICAL PERFOR A CE CHARACTERISTICS (For one channel. SHDN = VCC, unless
otherwise specified.)
140
500
135
480
3.0
TA = 85°C
TA = 25°C
130
TA = –40°C
125
SHUTDOWN CURRENT (nA)
2.5
TA = –40°C
460
TA = 25°C
TA = 85°C
440
2.0
1.5
1.0
TA = 25°C
5
3.5
4
4.5
SUPPLY VOLTAGE (V)
5.5
6
2.5
3
5
3.5
4
4.5
SUPPLY VOLTAGE (V)
5.5
3600
VOUT OUTPUT VOLTAGE (mV)
3200
TA = –40°C
2400
TA = 25°C
2000
1600
1200
TA = 85°C
800
400
3600
VCC = 3.6V
VOS = 0V
3200
2800
TA = –40°C
2400
2000
TA = 25°C
1600
1200
TA = 85°C
800
0
–32 –28 –24 –20 –16 –12 –8 –4 0 4
RF INPUT POWER (dBm)
8 12
2400
TA = 25°C
2000
1600
1200
800
TA = 85°C
400
0
–32 –28 –24 –20 –16 –12 –8 –4 0 4
RF INPUT POWER (dBm)
VOUT OUTPUT VOLTAGE (mV)
3200
TA = –40°C
5533 G07
TA = 25°C
2000
1600
1200
TA = 85°C
800
2400
2000
Typical Detector Characteristics,
7GHz
3600
3200
2800
TA = –40°C
TA = 25°C
1600
1200
800
TA = 85°C
0
–32 –28 –24 –20 –16 –12 –8 –4 0 4
RF INPUT POWER (dBm)
5533 G08
VCC = 3.6V
VOS = 0V
2800
2400
TA = –40°C
2000
1600
TA = 25°C
1200
800
400
8 12
8 12
5533 G06
VCC = 3.6V
VOS = 0V
400
8 12
TA = –40°C
2400
0
–32 –28 –24 –20 –16 –12 –8 –4 0 4
RF INPUT POWER (dBm)
8 12
VOUT OUTPUT VOLTAGE (mV)
3600
2800
2800
Typical Detector Characteristics,
5GHz
VCC = 3.6V
VOS = 0V
6
VCC = 3.6V
VOS = 0V
5533 G05
Typical Detector Characteristics,
3GHz
3200
5.5
400
5533 G04
3600
4.5
4
5
3.5
SUPPLY VOLTAGE (V)
Typical Detector Characteristics,
2GHz
400
0
–32 –28 –24 –20 –16 –12 –8 –4 0 4
RF INPUT POWER (dBm)
3
5533 G03
Typical Detector Characteristics,
1GHz
VCC = 3.6V
VOS = 0V
2800
TA = –40°C
5533 G02
Typical Detector Characteristics,
300MHz
3600
6
VOUT OUTPUT VOLTAGE (mV)
3
5533 G01
3200
0
2.5
420
2.5
VOUT OUTPUT VOLTAGE (mV)
TA = 85°C
0.5
120
VOUT OUTPUT VOLTAGE (mV)
Shutdown Current vs Supply
Voltage (RF Input Signal Off,
VOS = 0V, SHDN = 0V)
Supply Current vs Supply Voltage
(RF Input Signal Off, VOS = 0V)
SUPPLY CURRENT (µA)
VOUT OUTPUT VOLTAGE (mV)
Output Starting Voltage vs Supply
Voltage (RF Input Signal Off,
VOS = 0V)
TA = 85°C
0
–32 –28 –24 –20 –16 –12 –8 –4 0 4
RF INPUT POWER (dBm)
8 12
5533 G09
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LTC5533
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TYPICAL PERFOR A CE CHARACTERISTICS (For one channel. SHDN = VCC, unless
otherwise specified.)
1000
VCC = 3.6V
VOS = 0V
VOUT SLOPE (mV/dB)
100
TA = –40°C
TA = 85°C
TA = 25°C
1
–32 –28 –24 –20 –16 –12 –8 –4 0
RF INPUT POWER (dBm)
1000
VCC = 3.6V
VOS = 0V
100
TA = –40°C
TA = 85°C
10
4
VOUT SLOPE (mV/dB)
VOUT SLOPE (mV/dB)
1000
VCC = 3.6V
VOS = 0V
TA = –40°C
TA = 85°C
10
TA = 25°C
4
TA = –40°C
TA = 85°C
10
2
VOUT VARIATION (dB)
VOUT VARIATION (dB)
100
TA = –40°C
TA = 85°C
10
TA = 25°C
4
TA = –40°C
TA = 85°C
1
6
3
2
TA = –40°C
TA = 85°C
5533 G16
–3
–30 –26 –22 –18 –14 –10 –6 –2
RF INPUT POWER (dBm)
8
5533 G15
VCC = 3.6V
VOS = 0V
0
–1
4
VOUT Variation Relative to 25°C
vs RF Input Power at 2GHz
–2
–2
2
1
–32 –28 –24 –20 –16 –12 –8 –4 0
RF INPUT POWER (dBm)
8
VOUT Variation Relative to 25°C
vs RF Input Power at 1GHz
3
–3
–30 –26 –22 –18 –14 –10 –6 –2
RF INPUT POWER (dBm)
VCC = 3.6V
VOS = 0V
5533 G14
VCC = 3.6V
VOS = 0V
8
VOUT Slope vs RF Input Power
at 7GHz
1000
1
–32 –28 –24 –20 –16 –12 –8 –4 0
RF INPUT POWER (dBm)
8
4
5533 G12
TA = 25°C
0
–1
1
–32 –28 –24 –20 –16 –12 –8 –4 0
RF INPUT POWER (dBm)
8
100
VOUT Variation Relative to 25°C
vs RF Input Power at 300MHz
1
4
VCC = 3.6V
VOS = 0V
5533 G13
2
TA = 85°C
10
VOUT Slope vs RF Input Power
at 5GHz
100
3
TA = –40°C
5533 G11
VOUT Slope vs RF Input Power
at 3GHz
1
–32 –28 –24 –20 –16 –12 –8 –4 0
RF INPUT POWER (dBm)
100
TA = 25°C
1
–32 –28 –24 –20 –16 –12 –8 –4 0
RF INPUT POWER (dBm)
8
5533 G10
1000
VCC = 3.6V
VOS = 0V
TA = 25°C
VOUT SLOPE (mV/dB)
10
VOUT Slope vs RF Input Power
at 2GHz
VOUT VARIATION (dB)
VOUT SLOPE (mV/dB)
1000
VOUT Slope vs RF Input Power
at 1GHz
VOUT SLOPE (mV/dB)
VOUT Slope vs RF Input Power
at 300MHz
1
VCC = 3.6V
VOS = 0V
TA = –40°C
0
–1
TA = 85°C
–2
2
6
5533 G17
–3
–30 –26 –22 –18 –14 –10 –6 –2
RF INPUT POWER (dBm)
2
6
5533 G18
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LTC5533
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TYPICAL PERFOR A CE CHARACTERISTICS (For one channel. SHDN = VCC, unless
otherwise specified.)
VOUT Variation Relative to 25°C
vs RF Input Power at 3GHz
0
–1
TA = 85°C
–2
3
VCC = 3.6V
VOS = 0V
2
TA = –40°C
1
2
TA = –40°C
1
0
–1
TA = 85°C
2
–3
–28 –24 –20 –16 –12 –8 –4 0
RF INPUT POWER (dBm)
6
5533 G19
10
5
4
–1
TA = 85°C
–3
–26 –22 –18 –14 –10 –6 –2 2
RF INPUT POWER (dBm)
8
20
5500
15
10
5
10
VOUT vs RF Input Power and VCC
Supply Voltage, fRF = 2GHz
6000
VCC = 3.6V
VOS = 0V
TA = 25°C
6
5533 G21
VOUT OUTPUT VOLTAGE (mV)
25
15
0
Example VOUT1 – VOUT2 Mismatch
with –14dBm RF Signal Input at
1.8GHz
PERCENTAGE DISTRIBUTION (%)
PERCENTAGE DISTRIBUTION (%)
20
TA = –40°C
1
5533 G20
Example VOUT1 – VOUT2 Mismatch
with No RF Signal Input
VCC = 3.6V
VOS = 0V
TA = 25°C
VCC = 3.6V
VOS = 0V
–2
–2
–3
–30 –26 –22 –18 –14 –10 –6 –2
RF INPUT POWER (dBm)
25
VOUT Variation Relative to 25°C
vs RF Input Power at 7GHz
VOUT VARIATION (dB)
VOUT VARIATION (dB)
2
3
VCC = 3.6V
VOS = 0V
VOUT VARIATION (dB)
3
VOUT Variation Relative to 25°C
vs RF Input Power at 5GHz
VOS = 0V
TA = 25°C
VCC = 6V
VCC = 5V
5000
4500
VCC = 4V
4000
3500
VCC = 3V
3000
2500
2000
1500
1000
500
0
–25 –20 –15 –10 –5 0 5 10 15 20 25
VOUT1 – VOUT2 MISMATCH (mV)
VOUT vs RF Input Power and VOS,
fRF = 2GHz
VOUT OUTPUT VOLTAGE (mV)
3200
Channel-to-Channel Isolation vs
RF Input Frequency
VCC = 3.6V
TA = 25°C
CH. 2
ISOLATION (dB)
VOS = 1V
VOS = 0.75V
VOS = 0.5V
1200
800
400
1000
CH. 1
–30
2000
1600
Output Delay vs RF Input Power
900
2800
0
–32 –28 –24 –20 –16 –12 –8 –4 0 4
RF INPUT POWER (dBm)
–40
CH. 1
8 12
5533 G25
CH. 2
–50
VCC = 3.6V
VOS = 0V
TA = 25°C
RF PIN = +10dBm
–60
–70
VCC = 3.6V
VOS = 0V
TA = 25°C
800
VOS = 0V
VOS = 0.25V
12
5533 G24
–20
2400
8
5533 G23
5533 G22
3600
0
–32 –28 –24 –20 –16 –12 –8 –4 0 4
RF INPUT POWER (dBm)
–1 –0.8–0.6–0.4–0.2 0 0.2 0.4 0.6 0.8 1
VOUT1 – VOUT2 MISMATCH (dB)
OUTPUT DELAY (ns)
0
0
700
600
500
400
90% SWITCHING
300
200
50% SWITCHING
2000 4000 6000 8000 10000 12000
RF INPUT FREQUENCY (MHz)
5533 G26
100
–20
–16
–12 –8
–4
0
RF INPUT POWER (dBm)
4
8
5533 G27
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LTC5533
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TYPICAL PERFOR A CE CHARACTERISTICS
RFIN Input Impedance (Pin = 0dBm, VCC = 3.6V, TA = 25°C)
FREQUENCY
(GHz)
RESISTANCE
(Ω)
REACTANCE
(Ω)
0.30
290.45
–136.22
0.50
234.41
–162.54
0.70
178.25
–170.53
0.90
137.31
–159.89
1.10
109.17
–147.57
1.30
86.30
–136.18
1.50
68.65
–121.74
1.70
57.48
–107.60
1.90
49.79
– 96.72
2.10
43.56
– 86.70
2.30
38.67
–77.91
2.50
34.82
–70.13
2.70
31.68
– 62.86
2.90
29.13
– 56.01
3.10
27.17
– 49.83
3.30
25.73
– 44.24
3.50
24.56
– 39.74
3.70
23.18
– 35.35
3.90
22.31
– 30.62
4.10
20.73
–26.88
4.30
19.88
–22.31
4.50
19.40
–18.23
4.70
19.05
–14.25
4.90
19.08
–10.21
5.10
19.55
– 6.30
5.30
20.85
– 2.84
5.50
21.94
–1.49
5.70
20.60
– 0.07
5.90
19.29
2.99
6.10
18.69
6.61
6.30
18.53
10.39
6.50
18.74
14.35
6.70
19.79
17.91
6.90
19.75
20.77
7.00
19.99
22.47
S11 Forward Reflection
Impedance
0.3000GHz-7.000GHz
5508 TA03
5533f
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LTC5533
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TYPICAL PERFOR A CE CHARACTERISTICS
RFIN Input Impedance (Pin = –25dBm, VCC = 3.6V, TA = 25°C)
FREQUENCY
(GHz)
RESISTANCE
(Ω)
REACTANCE
(Ω)
0.30
216.45
–76.47
0.50
190.63
–98.28
0.70
161.98
–112.03
0.90
133.17
–111.53
1.10
113.08
–109.05
1.30
94.55
–107.08
1.50
75.33
– 98.50
1.70
63.52
– 88.19
1.90
55.19
– 80.05
2.10
48.64
–72.23
2.30
43.73
– 64.81
2.50
39.71
– 58.31
2.70
36.47
– 52.27
2.90
33.69
– 46.77
3.10
31.61
– 41.25
3.30
29.78
–36.61
3.50
28.27
–32.39
3.70
26.63
–28.12
3.90
26.12
–23.97
4.10
24.20
–20.75
4.30
23.28
–16.69
4.50
22.60
–12.77
4.70
22.21
– 9.08
4.90
22.15
–5.24
5.10
22.61
–1.58
5.30
23.90
1.53
5.50
24.97
2.62
5.70
23.51
4.00
5.90
22.25
6.94
6.10
21.57
10.62
6.30
21.43
14.02
6.50
21.69
17.77
6.70
22.68
21.24
6.90
22.81
24.21
7.00
23.07
25.56
S11 Forward Reflection
Impedance
0.3000GHz-7.000GHz
5508 TA04
5533f
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LTC5533
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PI FU CTIO S
VCC1, VCC2 (Pins 1, 4): Power Supply Voltage, 2.7V to 6V.
VCC should be bypassed appropriately with ceramic
capacitors.
has an internal 160k pulldown resistor to ensure that the
detector is shutdown when no SHDN input is applied. In
shutdown VOUT is connected to ground via a 280Ω resistor. Channels can be shut down independently.
VOUT1, VOUT2 (Pins 2, 5): Detector Outputs.
GND1, GND2 (Pins 11, 8): Ground.
VOS1, VOS2 (Pins 3, 6): VOUT Offset Voltage Adjustments.
These pins adjust the starting VOUT voltage when no RF
signal is present. For VOS from 0V to 130mV, VOUT is
unaffected by VOS. For VOS > 130mV, VOUT is the sum of
VOS plus the detected RF signal.
RFIN1, RFIN2 (Pins 12, 9): RF Input Voltage. Referenced
to VCC. A coupling capacitor must be used to connect to
the RF signal source. These pins have internal 500Ω
terminations, Schottky diode detectors and peak detector
capacitors.
SHDN1, SHDN2 (Pin 10, 7): Shutdown Inputs. A logic low
on the SHDN pin places the corresponding detector in
shutdown mode. A logic high enables the detector. SHDN
W
BLOCK DIAGRA
Exposed Pad (Pin13): Ground.
(One Channel)
RFSOURCE
12pF TO 200pF
(DEPENDING ON
APPLICATION)
VCC
ONE CHANNEL
SD
+
BIAS
BUFFER
SD
VOUT
–
500Ω
30k
RFIN
500Ω
30k
180Ω
100Ω
SD
31k
+
25pF
RF DET
24k
SD
50µA
GND
+
80k
VOS
–
–
80k
50µA
120mV
+
160k
5531 BD
SHDN
5533f
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LTC5533
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APPLICATIO S I FOR ATIO
Operation
span the input range of a variety of analog-to-digital
converters. VOUT will not change until VOS exceeds 130mV.
The voltage at VOUT for VOS >130mV and with no RF signal
present is:
The LTC5533 contains two RF detector dice in one package forming two independent RF detector channels. Each
channel provides RF power detection over frequencies
ranging from 300MHz to 11GHz. Channel functions include
an internal frequency compensated buffer amplifier with the
gain set to 2x, an RF Schottky diode peak detector and level
shift amplifier to convert the RF input signal to low frequency
and a delay circuit to avoid voltage transients at VOUT when
powering up. The LTC5533 has both shutdown and starting voltage adjustment capabilities.
VOUT = VOS
VOUT will track VOS above 130mV.
RF Detectors
The internal RF Schottky diode peak detectors and level
shift amplifiers convert the RF input signals to a low
frequency signal. The detectors demonstrate excellent
efficiency and linearity over a wide range of input power.
The Schottky diodes are biased at about 55µA and drive
25pF internal peak detector capacitors.
Buffer Amplifiers
The output buffer amplifiers are capable of supplying
typically 4mA into a load. These amplifiers have bandwidths of 2MHz and a fixed internal gain of two.
Applications
The VOS inputs control the DC input voltages to the buffer
amplifiers. VOS must be connected to ground if the DC
output voltage is not to be changed. The buffers are initially
trimmed to approximately 130mV with VOS connected to
ground.
The LTC5533 can be used as a self-standing signal
strength measuring receiver for a wide range of input
signals from –32dBm to 12dBm for frequencies from
300MHz to 11GHz. Operation at higher frequencies is
achievable with reduced performance. Consult factory for
more information. Figure 1 plots the output voltage as a
function of RF input power of an 11GHz CW input signal.
The VOS pins are used to change the initial VOUT starting
voltage. This function enables the LTC5533 outputs to
Demo Board Schematic
VCC1
2.7V TO 6V
C1
0.1µF
VOUT1
C4
OPT
VOS1
VCC2
2.7V TO 6V
VOUT2
VOS2
C2
100pF
SHDN1
1
2
C5
OPT
3
4
C7
0.1µF
C8
100pF
C9
OPT
C3
39pF
LTC5533
5
6
VCC1
RFIN1
VOUT1
GND
VOS1
SHDN1
VCC2
RFIN2
VOUT2
GND
VOS2
SHDN2
13
12
11
10
C6
39pF
R1
OPT
9
8
R2
OPT
7
J1
RFIN1
J2
RFIN2
5533 BD
SHDN2
C10
OPT
5533f
9
LTC5533
U
W
U U
APPLICATIO S I FOR ATIO
3600
VOUT OUTPUT VOLTAGE (mV)
3200
Figure 2 shows the corresponding slope of the 11GHz
response, and Figure 3 shows the variation of the output
voltage vs RF input power at –40°C and 85°C, normalized
to the room temperature (25°C) results.
VCC = 3.6V
VOS = 0V
2800
2400
2000
1600
TA = –40°C
1200
TA = 25°C
800
400
TA = 85°C
0
–32 –28 –24 –20 –16 –12 –8 –4 0 4 8 12
RF INPUT POWER (dBm)
5533 F01
Figure 1. Typical Detector Characteristics, 11GHz
VOUT SLOPE (mV/dB)
1000
TA = –40°C
TA = 85°C
TA = 25°C
1
–32 –28 –24 –20 –16 –12 –8 –4 0
RF INPUT POWER (dBm)
The LTC5533 can also be used for RF power detection and
control. Figure 4 is an example of an LTC5533 used for
dual band mobile phone transmitter power control.
The LTC5533 consists of two separate RF detector dice
packaged together. Consequently, detector-to-detector
isolation is good—typically 45dB at 2GHz. Output matching is good, but not precise. The characterization plots in
the Typical Performance Characteristics show that the
typical output voltage mismatch is within ±25mV with no
RF input signal present. With –14dBm RF input signal, the
typical equivalent mismatch is within ±1dB.
VCC = 3.6V
VOS = 0V
100
10
The LTC5533 can be used as a demodulator for AM and
ASK modulated signals with data rates up to 2MHz.
Depending on specific application needs, the detector
outputs can be split between two branches, providing ACcoupled data (or audio) output and a DC-coupled RSSI
output for signal strength measurements and AGC.
4
8
5533 F02
Figure 2. VOUT Slope vs RF Input Power at 11GHz
2
VCC = 3.6V
VOS = 0V
2
3
4
VOUT VARIATION (dB)
5
1
TA = –40°C
20dB RESISTIVE TAP
Li-Ion
C1
39pF
LTC5533
1
3
+
C3
0.1µF
6
VCC1
RFIN1
VOUT1
GND
VOS1
SHDN1
VCC2
RFIN2
VOUT2
GND
VOS2
SHDN2
12
ANTENNA
R1
360Ω
11
10
14dB RESISTIVE TAP
9
8
7
0
C2
39pF
R2
150Ω
CELL BAND
DIPLEXER
–1
TA = 85°C
PCS BAND
–2
–3
4
–24 –20 –16 –12 –8 –4 0
RF INPUT POWER (dBm)
8
12
MOBILE PHONE BB/DSP
VPC
5533 F04
BSE
5533 F03
Figure 3. VOUT Variation at –40°C and at 85°C vs RF Input Power
at 11GHz, Normalized to Room Temperature (25°C) Results.
Tx PA MODULE
Figure 4. Dual Band Mobile Phone Transmitter
Power Contol with LTC5533
5533f
10
LTC5533
U
PACKAGE DESCRIPTIO
DE Package
12-Lead Plastic DFN (4mm × 3mm)
(Reference LTC DWG # 05-08-1695)
0.65 ±0.05
3.50 ±0.05
1.70 ±0.05
2.20 ±0.05 (2 SIDES)
PACKAGE OUTLINE
0.25 ± 0.05
3.30 ±0.05
(2 SIDES)
0.50
BSC
RECOMMENDED SOLDER PAD PITCH AND DIMENSIONS
4.00 ±0.10
(2 SIDES)
7
R = 0.115
TYP
0.38 ± 0.10
12
R = 0.20
TYP
PIN 1
TOP MARK
(NOTE 6)
3.00 ±0.10
(2 SIDES)
1.70 ± 0.10
(2 SIDES)
PIN 1
NOTCH
(UE12/DE12) DFN 0603
0.200 REF
0.75 ±0.05
0.00 – 0.05
6
0.25 ± 0.05
3.30 ±0.10
(2 SIDES)
1
0.50
BSC
BOTTOM VIEW—EXPOSED PAD
NOTE:
1. DRAWING PROPOSED TO BE A VARIATION OF VERSION
(WGED) IN JEDEC PACKAGE OUTLINE M0-229
2. DRAWING NOT TO SCALE
3. ALL DIMENSIONS ARE IN MILLIMETERS
4. DIMENSIONS OF EXPOSED PAD ON BOTTOM OF PACKAGE DO NOT INCLUDE
MOLD FLASH. MOLD FLASH, IF PRESENT, SHALL NOT EXCEED 0.15mm ON ANY SIDE
5. EXPOSED PAD SHALL BE SOLDER PLATED
6. SHADED AREA IS ONLY A REFERENCE FOR PIN 1 LOCATION
ON THE TOP AND BOTTOM OF PACKAGE
5533f
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights.
11
LTC5533
RELATED PARTS
PART NUMBER
DESCRIPTION
COMMENTS
LT®5511
High Linearity Upconverting Mixer
RF Output to 3GHz, 17dBm IIP3, Integrated LO Buffer
LT5512
DC-3GHz High Signal Level Downconverting Mixer
DC to 3GHz, 21dBm IIP3, Integrated LO Buffer
LT5514
Ultralow Distortion, IF Amplifier/ADC Driver with
Digitally Controlled Gain
850MHz Bandwidth, 47dBm OIP3 at 100MHz, 10.5dB to 33dB
Gain Control Range
LT5515
1.5GHz to 2.5GHz Direct Conversion Quadrature Demodulator
20dBm IIP3, Integrated LO Quadrature Generator
LT5516
0.8GHz to 1.5GHz Direct Conversion Quadrature Demodulator
21.5dBm IIP3, Integrated LO Quadrature Generator
LT5517
40MHz to 900MHz Direct Conversion Quadrature Demodulator
21dBm IIP3, Integrated LO Quadrature Generator
LT5519
0.7GHz to 1.4GHz High Linearity Upconverting Mixer
17.1dBm IIP3, 50Ω Single Ended RF and LO Ports
LT5520
1.3GHz to 2.3GHz High Linearity Upconverting Mixer
15.9dBm IIP3, 50Ω Single Ended RF and LO Ports
LT5521
3.7GHz Very High Linearity Mixer
24.2dBm IIP3 at 1.95GHz, 12.5dB NF, –42dBm LO Leakage
LT5522
600MHz to 2.7GHz High Linearity Downconverting Mixer
4.5V to 5.25V Supply, 25dBm IIP3 at 900MHz, NF = 12.5dB,
50Ω Single-Ended RF and LO Ports
LT5524
Low Power, Low Distortion ADC Driver with
Digitally Programmable Gain
450MHz Bandwidth, 40dBm OIP3, 4.5dB to 27dB Gain Control Range
LT5525
0.9GHz to 2.5GHz High Linearity, Low Power
Downconverting Mixer
17.6dBm IIP3 at 1.9GHz, On-Chip 50Ω RF and LO Matching,
ICC = 28mA
LT5526
Broadband High Linearity, Low Power Downconverting Mixer
16.5dBm IIP3 at 0.9GHz, 11dB NF at 0.9GHz, ICC = 28mA
LT5528
1.6GHz to 2.45GHz High Linearity Direct Quadrature Modulator
21.8dBm OIP3 at 2GHz, –159dBm/Hz, Noise Floor, All Ports 50Ω
Matched, Single-Ended RF and LO Ports
Infrastructure
RF Power Detectors
LT5504
800MHz to 2.7GHz RF Measuring Receiver
80dB Dynamic Range, Temperature Compensated,
2.7V to 5.25V Supply
LTC5505
300MHz to 3GHz RF Power Detectors
LTC5505-1: –28dBm to 18dBm Range,
LTC5505-2: –32dBm to 12dBm Range,
Temperature Compensated, 2.7V to 6V Supply
LTC5507
100kHz to 1000MHz RF Power Detector
–34dBm to 14dBm Range, Temperature Compensated,
2.7V to 6V Supply
LTC5508
300MHz to 7GHz RF Power Detector
–32dBm to 12dBm Range, Temperature Compensated,
SC70 Package
LTC5509
300MHz to 3GHz RF Power Detector
36dB Dynamic Range, Temperature Compensated, SC70 Package
LTC5530
300MHz to 7GHz Precision RF Power Detector
Precision VOUT Offset Control, Shutdown and Adjustable Gain
LTC5531
300MHz to 7GHz Precision RF Power Detector
Precision VOUT Offset Control, Shutdown and Adjustable Offset
LTC5532
300MHz to 7GHz Precision RF Power Detector
Precision VOUT Offset Control, Adjustable Gain and Offset
LT5534
50MHz to 3GHz RF Power Detector
60dB Dynamic Range, Temperature Compensated, SC70 Package
LTC5535
300MHz to 7GHz Precision RF Detector with 12MHz Amplifier
Precision VOUT Offset Control, Adjustable Gain and Offset
LTC5536
600MHz to 7GHz Precision RF Detector With Fast Comparator
Output
–26dBm to 12dBm Range, 2mA Supply Current at 2V to 6V Supply,
Latch Enable Output
RF Power Controllers
LTC4400
SOT-23 RF PA Controller
Multiband GSM/DCS/GPRS Phones, 45dB Dynamic Range,
450kHz Loop BW
LTC4401
SOT-23 RF PA Controller
Multiband GSM/DCS/GPRS Phones, 45dB Dynamic Range,
250kHz Loop BW
LTC4402
Multiband RF Power Controller
Multiband GSM/GPRS/EDGE Mobile Phones
LTC4402-1: Single Channel Output Control
LTC4402-2: Dual Channel Output Control
LTC4403
RF Power Controller for EDGE/TDMA
Multiband GSM/GPRS/EDGE Mobile Phones, 250kHz Loop BW
5533f
12
Linear Technology Corporation
LT/TP 0105 1K • PRINTED IN USA
1630 McCarthy Blvd., Milpitas, CA 95035-7417
(408) 432-1900 ● FAX: (408) 434-0507
●
www.linear.com
© LINEAR TECHNOLOGY CORPORATION 2005