Freescale MRF5S19100HSR3 Rf power field effect transistors n-channel enhancement-mode lateral mosfet Datasheet

Freescale Semiconductor
Technical Data
Document Number: MRF5S19100H
Rev. 4, 5/2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for PCN and PCS base station applications with frequencies from
1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier
applications.
• Typical 2 - Carrier N - CDMA Performance: VDD = 28 Volts,
IDQ = 1000 mA, Pout = 22 Watts Avg., Full Frequency Band. IS - 95 (Pilot,
Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth =
1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 13.9 dB
Drain Efficiency — 25.5%
IM3 @ 2.5 MHz Offset — - 36.5 dBc in 1.2288 MHz Channel Bandwidth
ACPR @ 885 kHz Offset — - 50.7 dBc in 30 kHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 100 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• Lower Thermal Resistance Package
• Low Gold Plating Thickness on Leads, 40μ″ Nominal.
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel.
MRF5S19100HR3
MRF5S19100HSR3
1930- 1990 MHz, 22 W AVG., 28 V
2 x N - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465 - 06, STYLE 1
NI - 780
MRF5S19100HR3
CASE 465A - 06, STYLE 1
NI - 780S
MRF5S19100HSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain- Source Voltage
VDSS
- 0.5, +65
Vdc
Gate- Source Voltage
VGS
- 0.5, +15
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
269
1.54
W
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
TJ
200
°C
Symbol
Value (1)
Unit
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 75°C, 100 W CW
Case Temperature 70°C, 22 W CW
RθJC
0.64
0.65
°C/W
1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF5S19100HR3 MRF5S19100HSR3
1
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
2 (Minimum)
Machine Model
M3 (Minimum)
Charge Device Model
C7 (Minimum)
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate- Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 240 μAdc)
VGS(th)
—
2.7
—
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 1000 mAdc)
VGS(Q)
—
3.7
—
Vdc
Drain- Source On - Voltage
(VGS = 10 Vdc, ID = 2.4 Adc)
VDS(on)
—
0.26
—
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 2.4 Adc)
gfs
—
6.3
—
S
Crss
—
2.2
—
pF
Characteristic
Off Characteristics
On Characteristics (DC)
Dynamic Characteristics
Reverse Transfer Capacitance (1)
(VDS = 28 Vdc, VGS = 0, f = 1.0 MHz)
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1000 mA, Pout = 22 W Avg., f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz, 2 - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carriers. ACPR measured in
30 kHz Bandwidth @ ±885 kHz Offset. IM3 measured in 1.2288 MHz Channel Bandwidth @ ±2.5 MHz Offset. PAR = 9.8 dB @ 0.01%
Probability on CCDF.
Power Gain
Gps
12.5
13.9
—
dB
Drain Efficiency
ηD
24
25.5
—
%
Intermodulation Distortion
Adjacent Channel Power Ratio
Input Return Loss
IM3
—
- 36.5
- 35
dBc
ACPR
—
- 50.7
- 48
dBc
IRL
—
- 13
-9
dB
1. Part is internally matched both on input and output.
MRF5S19100HR3 MRF5S19100HSR3
2
RF Device Data
Freescale Semiconductor
B1
VBIAS
+
R2
R1
W1
VSUPPLY
C3
C4
C5
+
+
R3
C8
C7
+
C9
C10
R4
C11
C12
+
C13
+
C14
C6
Z9
Z6
RF
INPUT
Z1
Z1, Z3
Z2
Z4
Z5
Z6
Z7
Z8
Z2
Z3
C15
C16
Z4
Z5
DUT
Z8
Z10
Z11
Z12
Z7
Z13
C2
Z14
RF
OUTPUT
C17
C1
0.140″ x 0.080″ Microstrip
0.450″ x 0.080″ Microstrip
0.525″ x 0.080″ Microstrip
0.636″ x 0.141″ Microstrip
0.650″ x 0.050″ Microstrip
0.320″ x 1.299″ Microstrip
0.091″ x 1.133″ Microstrip
Z9
Z10
Z11
Z12
Z13
Z14
PCB
0.590″ x 0.071″ Microstrip
0.450″ x 1.133″ Microstrip
0.450″ x 0.141″ Microstrip
0.490″ x 0.080″ Microstrip
0.085″ x 0.080″ Microstrip
1.124″ x 0.080″ Microstrip
Arlon GX - 0300- 55- 22, 0.030″, εr = 2.55
Figure 1. MRF5S19100HR3(SR3) Test Circuit Schematic
Table 5. MRF5S19100HR3(SR3) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1
Short RF Bead
95F786
Newark
C1
22 pF Chip Capacitor
100B220CP 500X
ATC
C2
10 pF Chip Capacitor
100B100CP 500X
ATC
C3
1 μF, 50 V Tantalum Capacitor
T494C105(1)050AS
Kemet
C4, C12
0.1 μF Chip Capacitors
CDR33BX104AKWS
Kemet
C5, C11
1K pF Chip Capacitors
100B102JP 500X
ATC
C6
2.7 pF Chip Capacitor
100B2R7BP 500X
ATC
C7
4.3 pF Chip Capacitor
100B4R3JP 500X
ATC
C8
10 μF, 35 V Tantalum Capacitor
T494D106(1)035AS
Kemet
C9, C10, C13, C14
22 μF, 35 V Tantalum Capacitors
T494X226(1)035AS
Kemet
C15
0.6 – 4.5 Gigatrim Variable Capacitor
44F3358
Newark
C16
2.2 pF Chip Capacitor
100B2R2BP 500X
ATC
C17*
0.3 pF Chip Capacitor
100B0R3BP 500X
ATC
R1
1 kW Chip Resistor
D5534M07B1K00R
Newark
R2
560 kW Chip Resistor
CR1206 564JT
Newark
R3, R4
12 W Chip Resistors
RM73B2B120JT
Garrett Electronics
W1
1 turn 14 gauge wire
* Need for part will vary from fixture to fixture.
MRF5S19100HR3 MRF5S19100HSR3
RF Device Data
Freescale Semiconductor
3
MRF5S19100
Rev 1
C6
VGG
C8
C7
R1
B1
R3
W1
C1
C16
C15
C11 C12
VDD
R4
C13
C5
CUT OUT AREA
R2 C3 C4
C9 C10
C14
C2
C17
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 2. MRF5S19100HR3(SR3) Test Circuit Component Layout
MRF5S19100HR3 MRF5S19100HSR3
4
RF Device Data
Freescale Semiconductor
G ps , POWER GAIN (dB)
35
ηD
30
12
25
11
10
IRL
20
VDD = 28 Vdc, Pout = 22 W (Avg.), IDQ = 1000 mA
2−Carrier N−CDMA, 2.5 MHz Carrier Spacing
−30
9
−35
IM3
8
7
−40
1.2288 MHz Channel Bandwidth
PAR = 9.8 dB @ 0.01% Probability (CCDF)
−45
ACPR
−50
6
−10
IM3 (dBc), ACPR (dBc)
14
13
40
Gps
ηD, DRAIN
EFFICIENCY (%)
15
−15
−20
−25
−30
5
−55
1860 1880 1900 1920 1940 1960 1980 2000 2020 2040
−35
IRL, INPUT RETURN LOSS (dB)
TYPICAL CHARACTERISTICS
f, FREQUENCY (MHz)
Figure 3. 2 - Carrier N - CDMA Broadband Performance
16
IDQ = 1500 mA
1300 mA
1000 mA
14
760 mA
13
530 mA
12
VDD = 28 Vdc
f1 = 1958.75 MHz, f2 = 1961.25 MHz
Two−Tone Measurement, 2.5 MHz Tone Spacing
11
10
1
10
−25
−30
1300 mA
IDQ = 1500 mA
−35
−40
530 mA
−45
1000 mA
−50
760 mA
100
10
1
100
Pout, OUTPUT POWER (WATTS) PEP
Pout, OUTPUT POWER (WATTS) PEP
Figure 4. Two - Tone Power Gain versus
Output Power
Figure 5. Third Order Intermodulation Distortion
versus Output Power
−25
−30
VDD = 28 Vdc
f1 = 1958.75 MHz, f2 = 1961.25 MHz
Two−Tone Measurement, 2.5 MHz Tone Spacing
−20
−55
58
VDD = 28 Vdc, Pout = 100 W (PEP), IDQ = 1000 mA
Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 1960 MHz
57
Pout , OUTPUT POWER (dBm)
G ps , POWER GAIN (dB)
15
IMD, INTERMODULATION DISTORTION (dBc)
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
−15
3rd Order
−35
−40
−45
5th Order
−50
7th Order
−55
0.1
1
10
40
Ideal
56
55
54
P3dB = 51.98 dBm (157.81 W)
P1dB = 51.3 dBm (135.01 W)
53
52
Actual
51
50
49
48
47
46
32
VDD = 28 Vdc, IDQ = 1000 mA
Pulsed CW, 8 μsec(on), 1 msec(off)
f = 1960 MHz
33
34
35
36
37
38
39
40
41
42
43
TWO−TONE SPACING (MHz)
Pin, INPUT POWER (dBm)
Figure 6. Intermodulation Distortion Products
versus Tone Spacing
Figure 7. Pulse CW Output Power versus
Input Power
44
MRF5S19100HR3 MRF5S19100HSR3
RF Device Data
Freescale Semiconductor
5
30
25
ηD
VDD = 28 Vdc, IDQ = 1000 mA
f1 = 1958.75 MHz, f2 = 1961.25 MHz
2 x N−CDMA, 2.5 MHz @ 1.2288 MHz
Channel Bandwidth, PAR = 9.8 dB @
0.01% Probability (CCDF)
−28
IM3
−35
20
ACPR
15
Gps
−42
−49
10
−56
5
−63
0
108
107
106
100
−70
75
10
1
109
−21
MTTF FACTOR (HOURS x AMPS2)
35
IM3 (dBc), ACPR (dBc)
ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)
TYPICAL CHARACTERISTICS
120
140
160
180
220
200
TJ, JUNCTION TEMPERATURE (°C)
Pout, OUTPUT POWER (WATTS) AVG.
Figure 8. 2 - Carrier N - CDMA ACPR, IM3, Power Gain
and Drain Efficiency versus Output Power
This above graph displays calculated MTTF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by ID2 for MTTF in a particular application.
Figure 9. MTTF Factor versus Junction Temperature
N - CDMA TEST SIGNAL
100
0
1.2288 MHz
Channel BW
−10
−20
1
−IM3 in
1.2288 MHz
Integrated BW
−30
+IM3 in
1.2288 MHz
Integrated BW
−40
0.1
IS−95 CDMA (Pilot, Sync, Paging, Traffic Codes 8
Through 13) 1.2288 MHz Channel Bandwidth
Carriers. ACPR Measured in 30 kHz Bandwidth @
±885 kHz Offset. IM3 Measured in 1.2288 MHz
Bandwidth @ ±2.5 MHz Offset. PAR = 9.8 dB @
0.01% Probability on CCDF.
0.01
0.001
(dB)
PROBABILITY (%)
10
−50
−60
−70
−ACPR in 30 kHz
Integrated BW
+ACPR in 30 kHz
Integrated BW
−80
0.0001
0
2
4
6
8
10
−90
PEAK−TO−AVERAGE (dB)
Figure 10. 2 - Carrier CCDF N - CDMA
−100
−7.5
−6
−4.5
−3
−1.5
0
1.5
3
4.5
6
7.5
f, FREQUENCY (MHz)
Figure 11. 2 - Carrier N - CDMA Spectrum
MRF5S19100HR3 MRF5S19100HSR3
6
RF Device Data
Freescale Semiconductor
Zo = 10 Ω
f = 1990 MHz
Zload
f = 1990 MHz
f = 1930 MHz
f = 1930 MHz
Zsource
VDD = 28 Vdc, IDQ = 1000 mA, Pout = 22 W Avg.
f
MHz
Zsource
Ω
Zload
Ω
1930
4.45 - j5.32
1.98 - j2.58
1960
4.53 - j5.40
1.83 - j2.55
1990
5.12 - j5.45
1.60 - j2.15
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 12. Series Equivalent Source and Load Impedance
MRF5S19100HR3 MRF5S19100HSR3
RF Device Data
Freescale Semiconductor
7
NOTES
MRF5S19100HR3 MRF5S19100HSR3
8
RF Device Data
Freescale Semiconductor
NOTES
MRF5S19100HR3 MRF5S19100HSR3
RF Device Data
Freescale Semiconductor
9
NOTES
MRF5S19100HR3 MRF5S19100HSR3
10
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
B
G
Q
bbb
2X
1
M
T A
M
B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
M
3
B
K
2
(FLANGE)
D
bbb
M
T A
M
B
M
M
R
(INSULATOR)
bbb
N
M
T A
M
B
M
ccc
M
T A
M
M
aaa
M
T A
M
B
S
(LID)
ccc
H
(LID)
M
T A
M
B
M
(INSULATOR)
B
M
C
F
E
A
T
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
4X Z
(LID)
B
1
K
2X
2
D
bbb
M
T A
M
B
M
N
M
R
(LID)
ccc
M
T A
M
B
M
ccc
M
T A
M
T A
M
S
(INSULATOR)
bbb
M
B
M
aaa
M
T A
M
(LID)
B
M
(INSULATOR)
B
M
C
3
E
A
(FLANGE)
DIM
A
B
C
D
E
F
H
K
M
N
R
S
U
Z
aaa
bbb
ccc
INCHES
MIN
MAX
0.805
0.815
0.380
0.390
0.125
0.170
0.495
0.505
0.035
0.045
0.003
0.006
0.057
0.067
0.170
0.210
0.774
0.786
0.772
0.788
0.365
0.375
0.365
0.375
−−−
0.040
−−−
0.030
0.005 REF
0.010 REF
0.015 REF
MILLIMETERS
MIN
MAX
20.45
20.70
9.65
9.91
3.18
4.32
12.57
12.83
0.89
1.14
0.08
0.15
1.45
1.70
4.32
5.33
19.61
20.02
19.61
20.02
9.27
9.53
9.27
9.52
−−−
1.02
−−−
0.76
0.127 REF
0.254 REF
0.381 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
5. SOURCE
H
A
MILLIMETERS
MIN
MAX
33.91
34.16
9.65
9.91
3.18
4.32
12.57
12.83
0.89
1.14
0.08
0.15
27.94 BSC
1.45
1.70
4.32
5.33
19.66
19.96
19.60
20.00
3.00
3.51
9.27
9.53
9.27
9.52
0.127 REF
0.254 REF
0.381 REF
CASE 465 - 06
ISSUE G
NI - 780
MRF5S19100HR3
4X U
(FLANGE)
B
INCHES
MIN
MAX
1.335
1.345
0.380
0.390
0.125
0.170
0.495
0.505
0.035
0.045
0.003
0.006
1.100 BSC
0.057
0.067
0.170
0.210
0.774
0.786
0.772
0.788
.118
.138
0.365
0.375
0.365
0.375
0.005 REF
0.010 REF
0.015 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
SEATING
PLANE
(FLANGE)
(FLANGE)
DIM
A
B
C
D
E
F
G
H
K
M
N
Q
R
S
aaa
bbb
ccc
F
T
SEATING
PLANE
CASE 465A - 06
ISSUE H
NI - 780S
MRF5S19100HSR3
MRF5S19100HR3 MRF5S19100HSR3
RF Device Data
Freescale Semiconductor
11
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© Freescale Semiconductor, Inc. 2006. All rights reserved.
MRF5S19100HR3 MRF5S19100HSR3
Document Number: MRF5S19100H
Rev. 4, 5/2006
12
RF Device Data
Freescale Semiconductor
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