Freescale Semiconductor Technical Data Document Number: MRF5S19100H Rev. 4, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. • Typical 2 - Carrier N - CDMA Performance: VDD = 28 Volts, IDQ = 1000 mA, Pout = 22 Watts Avg., Full Frequency Band. IS - 95 (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 13.9 dB Drain Efficiency — 25.5% IM3 @ 2.5 MHz Offset — - 36.5 dBc in 1.2288 MHz Channel Bandwidth ACPR @ 885 kHz Offset — - 50.7 dBc in 30 kHz Channel Bandwidth • Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 100 Watts CW Output Power Features • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • Lower Thermal Resistance Package • Low Gold Plating Thickness on Leads, 40μ″ Nominal. • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel. MRF5S19100HR3 MRF5S19100HSR3 1930- 1990 MHz, 22 W AVG., 28 V 2 x N - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 465 - 06, STYLE 1 NI - 780 MRF5S19100HR3 CASE 465A - 06, STYLE 1 NI - 780S MRF5S19100HSR3 Table 1. Maximum Ratings Rating Symbol Value Unit Drain- Source Voltage VDSS - 0.5, +65 Vdc Gate- Source Voltage VGS - 0.5, +15 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 269 1.54 W W/°C Storage Temperature Range Tstg - 65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature TJ 200 °C Symbol Value (1) Unit Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 75°C, 100 W CW Case Temperature 70°C, 22 W CW RθJC 0.64 0.65 °C/W 1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2006. All rights reserved. RF Device Data Freescale Semiconductor MRF5S19100HR3 MRF5S19100HSR3 1 Table 3. ESD Protection Characteristics Test Conditions Class Human Body Model 2 (Minimum) Machine Model M3 (Minimum) Charge Device Model C7 (Minimum) Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 240 μAdc) VGS(th) — 2.7 — Vdc Gate Quiescent Voltage (VDS = 28 Vdc, ID = 1000 mAdc) VGS(Q) — 3.7 — Vdc Drain- Source On - Voltage (VGS = 10 Vdc, ID = 2.4 Adc) VDS(on) — 0.26 — Vdc Forward Transconductance (VDS = 10 Vdc, ID = 2.4 Adc) gfs — 6.3 — S Crss — 2.2 — pF Characteristic Off Characteristics On Characteristics (DC) Dynamic Characteristics Reverse Transfer Capacitance (1) (VDS = 28 Vdc, VGS = 0, f = 1.0 MHz) Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1000 mA, Pout = 22 W Avg., f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz, 2 - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carriers. ACPR measured in 30 kHz Bandwidth @ ±885 kHz Offset. IM3 measured in 1.2288 MHz Channel Bandwidth @ ±2.5 MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain Gps 12.5 13.9 — dB Drain Efficiency ηD 24 25.5 — % Intermodulation Distortion Adjacent Channel Power Ratio Input Return Loss IM3 — - 36.5 - 35 dBc ACPR — - 50.7 - 48 dBc IRL — - 13 -9 dB 1. Part is internally matched both on input and output. MRF5S19100HR3 MRF5S19100HSR3 2 RF Device Data Freescale Semiconductor B1 VBIAS + R2 R1 W1 VSUPPLY C3 C4 C5 + + R3 C8 C7 + C9 C10 R4 C11 C12 + C13 + C14 C6 Z9 Z6 RF INPUT Z1 Z1, Z3 Z2 Z4 Z5 Z6 Z7 Z8 Z2 Z3 C15 C16 Z4 Z5 DUT Z8 Z10 Z11 Z12 Z7 Z13 C2 Z14 RF OUTPUT C17 C1 0.140″ x 0.080″ Microstrip 0.450″ x 0.080″ Microstrip 0.525″ x 0.080″ Microstrip 0.636″ x 0.141″ Microstrip 0.650″ x 0.050″ Microstrip 0.320″ x 1.299″ Microstrip 0.091″ x 1.133″ Microstrip Z9 Z10 Z11 Z12 Z13 Z14 PCB 0.590″ x 0.071″ Microstrip 0.450″ x 1.133″ Microstrip 0.450″ x 0.141″ Microstrip 0.490″ x 0.080″ Microstrip 0.085″ x 0.080″ Microstrip 1.124″ x 0.080″ Microstrip Arlon GX - 0300- 55- 22, 0.030″, εr = 2.55 Figure 1. MRF5S19100HR3(SR3) Test Circuit Schematic Table 5. MRF5S19100HR3(SR3) Test Circuit Component Designations and Values Part Description Part Number Manufacturer B1 Short RF Bead 95F786 Newark C1 22 pF Chip Capacitor 100B220CP 500X ATC C2 10 pF Chip Capacitor 100B100CP 500X ATC C3 1 μF, 50 V Tantalum Capacitor T494C105(1)050AS Kemet C4, C12 0.1 μF Chip Capacitors CDR33BX104AKWS Kemet C5, C11 1K pF Chip Capacitors 100B102JP 500X ATC C6 2.7 pF Chip Capacitor 100B2R7BP 500X ATC C7 4.3 pF Chip Capacitor 100B4R3JP 500X ATC C8 10 μF, 35 V Tantalum Capacitor T494D106(1)035AS Kemet C9, C10, C13, C14 22 μF, 35 V Tantalum Capacitors T494X226(1)035AS Kemet C15 0.6 – 4.5 Gigatrim Variable Capacitor 44F3358 Newark C16 2.2 pF Chip Capacitor 100B2R2BP 500X ATC C17* 0.3 pF Chip Capacitor 100B0R3BP 500X ATC R1 1 kW Chip Resistor D5534M07B1K00R Newark R2 560 kW Chip Resistor CR1206 564JT Newark R3, R4 12 W Chip Resistors RM73B2B120JT Garrett Electronics W1 1 turn 14 gauge wire * Need for part will vary from fixture to fixture. MRF5S19100HR3 MRF5S19100HSR3 RF Device Data Freescale Semiconductor 3 MRF5S19100 Rev 1 C6 VGG C8 C7 R1 B1 R3 W1 C1 C16 C15 C11 C12 VDD R4 C13 C5 CUT OUT AREA R2 C3 C4 C9 C10 C14 C2 C17 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. MRF5S19100HR3(SR3) Test Circuit Component Layout MRF5S19100HR3 MRF5S19100HSR3 4 RF Device Data Freescale Semiconductor G ps , POWER GAIN (dB) 35 ηD 30 12 25 11 10 IRL 20 VDD = 28 Vdc, Pout = 22 W (Avg.), IDQ = 1000 mA 2−Carrier N−CDMA, 2.5 MHz Carrier Spacing −30 9 −35 IM3 8 7 −40 1.2288 MHz Channel Bandwidth PAR = 9.8 dB @ 0.01% Probability (CCDF) −45 ACPR −50 6 −10 IM3 (dBc), ACPR (dBc) 14 13 40 Gps ηD, DRAIN EFFICIENCY (%) 15 −15 −20 −25 −30 5 −55 1860 1880 1900 1920 1940 1960 1980 2000 2020 2040 −35 IRL, INPUT RETURN LOSS (dB) TYPICAL CHARACTERISTICS f, FREQUENCY (MHz) Figure 3. 2 - Carrier N - CDMA Broadband Performance 16 IDQ = 1500 mA 1300 mA 1000 mA 14 760 mA 13 530 mA 12 VDD = 28 Vdc f1 = 1958.75 MHz, f2 = 1961.25 MHz Two−Tone Measurement, 2.5 MHz Tone Spacing 11 10 1 10 −25 −30 1300 mA IDQ = 1500 mA −35 −40 530 mA −45 1000 mA −50 760 mA 100 10 1 100 Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP Figure 4. Two - Tone Power Gain versus Output Power Figure 5. Third Order Intermodulation Distortion versus Output Power −25 −30 VDD = 28 Vdc f1 = 1958.75 MHz, f2 = 1961.25 MHz Two−Tone Measurement, 2.5 MHz Tone Spacing −20 −55 58 VDD = 28 Vdc, Pout = 100 W (PEP), IDQ = 1000 mA Two−Tone Measurements (f1 + f2)/2 = Center Frequency of 1960 MHz 57 Pout , OUTPUT POWER (dBm) G ps , POWER GAIN (dB) 15 IMD, INTERMODULATION DISTORTION (dBc) IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) −15 3rd Order −35 −40 −45 5th Order −50 7th Order −55 0.1 1 10 40 Ideal 56 55 54 P3dB = 51.98 dBm (157.81 W) P1dB = 51.3 dBm (135.01 W) 53 52 Actual 51 50 49 48 47 46 32 VDD = 28 Vdc, IDQ = 1000 mA Pulsed CW, 8 μsec(on), 1 msec(off) f = 1960 MHz 33 34 35 36 37 38 39 40 41 42 43 TWO−TONE SPACING (MHz) Pin, INPUT POWER (dBm) Figure 6. Intermodulation Distortion Products versus Tone Spacing Figure 7. Pulse CW Output Power versus Input Power 44 MRF5S19100HR3 MRF5S19100HSR3 RF Device Data Freescale Semiconductor 5 30 25 ηD VDD = 28 Vdc, IDQ = 1000 mA f1 = 1958.75 MHz, f2 = 1961.25 MHz 2 x N−CDMA, 2.5 MHz @ 1.2288 MHz Channel Bandwidth, PAR = 9.8 dB @ 0.01% Probability (CCDF) −28 IM3 −35 20 ACPR 15 Gps −42 −49 10 −56 5 −63 0 108 107 106 100 −70 75 10 1 109 −21 MTTF FACTOR (HOURS x AMPS2) 35 IM3 (dBc), ACPR (dBc) ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) TYPICAL CHARACTERISTICS 120 140 160 180 220 200 TJ, JUNCTION TEMPERATURE (°C) Pout, OUTPUT POWER (WATTS) AVG. Figure 8. 2 - Carrier N - CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application. Figure 9. MTTF Factor versus Junction Temperature N - CDMA TEST SIGNAL 100 0 1.2288 MHz Channel BW −10 −20 1 −IM3 in 1.2288 MHz Integrated BW −30 +IM3 in 1.2288 MHz Integrated BW −40 0.1 IS−95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Channel Bandwidth Carriers. ACPR Measured in 30 kHz Bandwidth @ ±885 kHz Offset. IM3 Measured in 1.2288 MHz Bandwidth @ ±2.5 MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. 0.01 0.001 (dB) PROBABILITY (%) 10 −50 −60 −70 −ACPR in 30 kHz Integrated BW +ACPR in 30 kHz Integrated BW −80 0.0001 0 2 4 6 8 10 −90 PEAK−TO−AVERAGE (dB) Figure 10. 2 - Carrier CCDF N - CDMA −100 −7.5 −6 −4.5 −3 −1.5 0 1.5 3 4.5 6 7.5 f, FREQUENCY (MHz) Figure 11. 2 - Carrier N - CDMA Spectrum MRF5S19100HR3 MRF5S19100HSR3 6 RF Device Data Freescale Semiconductor Zo = 10 Ω f = 1990 MHz Zload f = 1990 MHz f = 1930 MHz f = 1930 MHz Zsource VDD = 28 Vdc, IDQ = 1000 mA, Pout = 22 W Avg. f MHz Zsource Ω Zload Ω 1930 4.45 - j5.32 1.98 - j2.58 1960 4.53 - j5.40 1.83 - j2.55 1990 5.12 - j5.45 1.60 - j2.15 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 12. Series Equivalent Source and Load Impedance MRF5S19100HR3 MRF5S19100HSR3 RF Device Data Freescale Semiconductor 7 NOTES MRF5S19100HR3 MRF5S19100HSR3 8 RF Device Data Freescale Semiconductor NOTES MRF5S19100HR3 MRF5S19100HSR3 RF Device Data Freescale Semiconductor 9 NOTES MRF5S19100HR3 MRF5S19100HSR3 10 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS B G Q bbb 2X 1 M T A M B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. M 3 B K 2 (FLANGE) D bbb M T A M B M M R (INSULATOR) bbb N M T A M B M ccc M T A M M aaa M T A M B S (LID) ccc H (LID) M T A M B M (INSULATOR) B M C F E A T A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4X Z (LID) B 1 K 2X 2 D bbb M T A M B M N M R (LID) ccc M T A M B M ccc M T A M T A M S (INSULATOR) bbb M B M aaa M T A M (LID) B M (INSULATOR) B M C 3 E A (FLANGE) DIM A B C D E F H K M N R S U Z aaa bbb ccc INCHES MIN MAX 0.805 0.815 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 0.365 0.375 0.365 0.375 −−− 0.040 −−− 0.030 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.45 20.70 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 19.61 20.02 19.61 20.02 9.27 9.53 9.27 9.52 −−− 1.02 −−− 0.76 0.127 REF 0.254 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE H A MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 19.66 19.96 19.60 20.00 3.00 3.51 9.27 9.53 9.27 9.52 0.127 REF 0.254 REF 0.381 REF CASE 465 - 06 ISSUE G NI - 780 MRF5S19100HR3 4X U (FLANGE) B INCHES MIN MAX 1.335 1.345 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 .118 .138 0.365 0.375 0.365 0.375 0.005 REF 0.010 REF 0.015 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE SEATING PLANE (FLANGE) (FLANGE) DIM A B C D E F G H K M N Q R S aaa bbb ccc F T SEATING PLANE CASE 465A - 06 ISSUE H NI - 780S MRF5S19100HSR3 MRF5S19100HR3 MRF5S19100HSR3 RF Device Data Freescale Semiconductor 11 How to Reach Us: Home Page: www.freescale.com E - mail: [email protected] USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006. All rights reserved. MRF5S19100HR3 MRF5S19100HSR3 Document Number: MRF5S19100H Rev. 4, 5/2006 12 RF Device Data Freescale Semiconductor