Ordering number : EN6006A CPH3101 Bipolar Transistor –30V, –2A, Low VCE(sat), PNP Single CPH3 http://onsemi.com Applications • Relay drivers, lamp drivers, motor drivers, flash Features • • • • • • Adoption of FBET and MBIT processes Large current capacity Low collector-to-emitter saturation voltage High-speed switching Ultrasmall-sized package permitting applied sets to be made small and slim High allowable power dissipation Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Conditions Ratings Unit VCBO VCEO Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current (Pulse) VEBO IC ICP Base Current IB Collector Dissipation Junction Temperature PC Tj Storage Temperature Tstg Collector Current --30 V --30 V --6 V --2 A --4 --400 When mounted on ceramic substrate (600mm2×0.8mm) A mA 0.9 W 150 °C --55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7015A-003 • Package : CPH3 • JEITA, JEDEC : SC-59, TO-236, SOT-23 • Minimum Packing Quantity : 3,000 pcs./reel CPH3101-TL-E 0.6 2.9 0.15 Packing Type: TL 0.05 LOT No. 0.2 AA 3 1.6 2.8 Marking 0.9 0.2 0.6 TL 1 0.95 2 0.4 1 : Base 2 : Emitter 3 : Collector CPH3 Electrical Connection 3 1 2 Semiconductor Components Industries, LLC, 2013 September, 2013 D0512 TKIM TC-00002846/40599TS (KOTO) TA-1594 No.6006-1/6 CPH3101 Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current ICBO IEBO hFE Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage VCE= --2V, IC= --100mA VCE= --10V, IC= --50mA Base-to-Emitter Saturation Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time max 200 μA --0.1 μA 400 MHz 32 V(BR)EBO ton IC= --10μA, IC=0A tstg tf See specified Test Circuit. Unit --0.1 150 IC= --1.5A, IB= --75mA IC= --10μA, IE=0A IC= --1mA, RBE=∞ V(BR)CBO V(BR)CEO Collector-to-Emitter Breakdown Voltage typ VCB= --10V, f=1MHz IC= --1.5A, IB= --75mA VCE(sat) VBE(sat) Collector-to-Base Breakdown Voltage min VCB= --20V, IE=0A VEB= --3V, IC=0A fT Cob Output Capacitance Ratings Conditions pF --350 --600 --0.85 --1.2 mV V --30 V --30 V --6 V 60 ns 350 ns 25 ns Switching Time Test Circuit IB1 IB2 PW=20μs D.C.≤1% OUTPUT INPUT VR 1kΩ RL + + 50Ω 100μF 470μF VBE=5V VCC= --12V IC=20IB1= --20IB2= --500mA Ordering Information Device CPH3101-TL-E Shipping memo CPH3 3,000pcs./reel Pb Free IC -- VCE A 0m --25 0 --1.4 --1.2 VCE= --2V --2.8 --10mA mA --1.6 --4 --5 --100mA --150mA --200mA A 0m --1.8 --8mA --6mA --1.0 --0.8 --4mA --0.6 --2mA --0.4 --2.4 --2.0 --1.6 --1.2 --0.8 --0.4 --0.2 0 IC -- VBE --3.2 A 0m 0mA --3 --2 Collector Current, IC -- A --2.0 Collector Current, IC -- A Package IB=0 0 --200 --400 --600 --800 Collector-to-Emitter Voltage, VCE -- mV --1000 IT16947 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 Base-to-Emitter Voltage, VBE -- V --1.2 IT16948 No.6006-2/6 CPH3101 hFE -- IC 1000 VCE= --2V DC Current Gain, hFE 5 3 2 100 7 5 3 2 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 5 3 2 5 7 2 --10 3 5 Collector-to-Base Voltage, VCB -- V 5 2 3 5 --1.0 7 5 0m s DC s s op era tio n 3 2 --0.1 7 Ta=25°C 3 Single pulse When mounted on ceramic substrate (600mm2✕0.8mm) 2 2 3 5 7 --1.0 2 3 5 7 --10 2 3 Collector-to-Emitter Voltage, VCE -- V 7 --100 2 3 5 7 --1000 2 3 5 IT16950 VCE(sat) -- IC IC / IB=10 2 --1.0 7 5 3 2 0.1 7 5 3 2 5 7 --0.01 2 3 5 7 --0.1 2 3 5 7--1.0 2 3 5 IT16947 PC -- Ta When mounted on ceramic substrate (600mm2✕0.8mm) s 0μ m 1m Collector Current, IC -- A 10 IC 10 5 2 ICP 50 2 3 1.2 μs 100 3 5 Collector Current, IC -- A ASO 7 7 0.01 7 --100 IT16947 Collector Dissipation, PC -- W Output Capacitance, Cob -- pF 7 3 100 3 100 2 2 5 f=1MHz 10 --1.0 3 Collector Current, IC -- mA Cob -- VCB 2 5 10 --10 5 7 10 IT16949 Collector Current, IC -- A VCE= --10V 7 Gain-Bandwidth Product, f T -- MHz 7 10 --0.01 f T -- IC 1000 5 7 IT16953 1.0 0.9 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT16954 No.6006-3/6 CPH3101 Embossed Taping Specification CPH3101-TL-E No.6006-4/6 CPH3101 Outline Drawing CPH3101-TL-E Land Pattern Example Mass (g) Unit 0.013 mm * For reference Unit: mm 2.4 1.4 0.6 0.95 0.95 No.6006-5/6 CPH3101 ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. 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