Vishay BYW52 Silicon mesa rectifier Datasheet

BYW52 / 53 / 54 / 55 / 56
Vishay Semiconductors
Standard Avalanche Sinterglass Diode
Features
•
•
•
•
•
•
•
Controlled avalanche characteristics
Glass passivated junction
e2
Hermetically sealed package
Low reverse current
High surge current loading
Lead (Pb)-free component
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
949539
Applications
Mechanical Data
Rectification, general purpose
Case: SOD-57 Sintered glass case
Terminals: Plated axial leads, solderable per
MIL-STD-750, Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight: approx. 369 mg
Parts Table
Part
Type differentiation
Package
BYW52
VR = 200 V; IFAV = 2 A
SOD-57
BYW53
VR = 400 V; IFAV = 2 A
SOD-57
BYW54
VR = 600 V; IFAV = 2 A
SOD-57
BYW55
VR = 800 V; IFAV = 2 A
SOD-57
BYW56
VR = 1000 V; IFAV = 2 A
SOD-57
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Reverse voltage = Repetitive
peak reverse voltage
Peak forward surge current
Test condition
see electrical characteristics
tp = 10 ms, half sinewave
Repetitive peak forward current
Part
Symbol
Value
Unit
BYW52
VR = VRRM
200
V
BYW53
VR = VRRM
400
V
BYW54
VR = VRRM
600
V
BYW55
VR = VRRM
800
V
BYW56
VR = VRRM
1000
V
IFSM
50
A
IFRM
12
A
Average forward current
ϕ = 180 °
IFAV
2
A
Pulse avalanche peak power
tp = 20 µs half sine wave,
Tj = 175 °C
PR
1000
W
Document Number 86049
Rev. 1.6, 14-Apr-05
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BYW52 / 53 / 54 / 55 / 56
Vishay Semiconductors
Parameter
Test condition
Pulse energy in avalanche
mode, non repetitive (inductive
load switch off)
Part
I(BR)R = 1 A, Tj = 175 °C
i2* t-rating
Junction and storage
temperature range
Symbol
Value
Unit
ER
20
mJ
i2*t
8
A2*s
Tj = Tstg
- 55 to + 175
°C
Maximum Thermal Resistance
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Junction ambient
Symbol
Value
Unit
l = 10 mm, TL = constant
RthJA
45
K/W
on PC board with spacing
25 mm
RthJA
100
K/W
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Typ.
Max
Forward voltage
Parameter
IF = 1 A
Test condition
VF
0.9
1.0
V
Reverse current
VR = VRRM
IR
0.1
1
µA
VR = VRRM, Tj = 100 °C
IR
5
10
µA
Breakdown voltage
IR = 100 µA, tp/T = 0.01,
tp = 0.3 ms
V(BR)
1600
V
Diode capacitance
VR = 4 V, f = 1 MHz
Reverse recovery time
Reverse recovery charge
Symbol
Min
CD
18
Unit
pF
µs
IF = 0.5 A, IR = 1 A, iR = 0.25 A
trr
4
IF = 1 A, di/dt = 5 A/µs, VR = 50 V
trr
4
µs
IF = 1 A, di/dt = 5 A/µs
Qrr
200
nC
120
l
l
10.000
– Forward Current (A)
100
80
TL= constant
60
20
0
0
5
94 9101
10
15
20
25
30
l - Lead Length ( mm )
Figure 1. Typ. Thermal Resistance vs. Lead Length
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Tj = 175 °C
0.100
Tj = 25 °C
0.010
F
40
1.000
I
RthJA Therm. Resist. Junction/Ambient (K/W)
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
0.001
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
16350
V F – Forward Voltage ( V )
Figure 2. Forward Current vs. Forward Voltage
Document Number 86049
Rev. 1.6, 14-Apr-05
BYW52 / 53 / 54 / 55 / 56
Vishay Semiconductors
I FAV –Average Forward Current( A )
V R = VRRM
half sinewave
2.0
RthJA = 45 K/W
l = 10 mm
1.5
1.0
0.5
RthJA = 100 K/W
PCB: d = 25 mm
0.0
0
20
40
60
300
200
150
PR–Limit
@80 % VR
100
50
0
25
50
75
100 125 150 175
Tj – Junction Temperature ( °C )
Figure 5. Max. Reverse Power Dissipation vs. Junction
Temperature
1000
40
CD – Diode Capacitance ( pF )
V R = VRRM
I R – Reverse Current (A)
PR–Limit
@100 % VR
250
16353
Figure 3. Max. Average Forward Current vs. Ambient Temperature
100
10
1
25
f = 1 MHz
35
30
25
20
15
10
5
0
0.1
50
75
100 125 150 175
Tj – Junction Temperature (°C )
16352
16354
1.0
10.0
V R – Reverse Voltage ( V )
100.0
Figure 6. Diode Capacitance vs. Reverse Voltage
Figure 4. Reverse Current vs. Junction Temperature
Zthp–Thermal Resistance for PulseCond.(K/W)
V R = VRRM
350
80 100 120 140 160 180
Tamb – Ambient Temperature (°C )
16351
400
PR – Reverse Power Dissipation ( mW )
2.5
1000
VRRM = 1000 V, RthJA = 100K/W
100
tp/T = 0.5
10
tp/T = 0.2
Tamb = 25°C
tp/T = 0.1
Tamb = 45°C
tp/T = 0.05
Tamb = 60 °C
tp/T = 0.02
Tamb = 70°C
tp/T = 0.01
Tamb = 100°C
1
10–5
10–4
94 9178
10–3
10–2
10–1
10 0
10 1
tp – Pulse Length ( s )
10 0
10 1
102
I FRM – Repetitive Peak
Forward Current ( A )
Figure 7. Thermal Response
Document Number 86049
Rev. 1.6, 14-Apr-05
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BYW52 / 53 / 54 / 55 / 56
Vishay Semiconductors
Package Dimensions in mm (Inches)
Sintered Glass Case
SOD-57
3.6 (0.140)max.
94 9538
Cathode Identification
ISO Method E
0.82 (0.032) max.
26(1.014) min.
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4.0 (0.156) max.
26(1.014) min.
Document Number 86049
Rev. 1.6, 14-Apr-05
BYW52 / 53 / 54 / 55 / 56
Vishay Semiconductors
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Document Number 86049
Rev. 1.6, 14-Apr-05
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Document Number: 91000
Revision: 08-Apr-05
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