BYW52 / 53 / 54 / 55 / 56 Vishay Semiconductors Standard Avalanche Sinterglass Diode Features • • • • • • • Controlled avalanche characteristics Glass passivated junction e2 Hermetically sealed package Low reverse current High surge current loading Lead (Pb)-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 949539 Applications Mechanical Data Rectification, general purpose Case: SOD-57 Sintered glass case Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight: approx. 369 mg Parts Table Part Type differentiation Package BYW52 VR = 200 V; IFAV = 2 A SOD-57 BYW53 VR = 400 V; IFAV = 2 A SOD-57 BYW54 VR = 600 V; IFAV = 2 A SOD-57 BYW55 VR = 800 V; IFAV = 2 A SOD-57 BYW56 VR = 1000 V; IFAV = 2 A SOD-57 Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Reverse voltage = Repetitive peak reverse voltage Peak forward surge current Test condition see electrical characteristics tp = 10 ms, half sinewave Repetitive peak forward current Part Symbol Value Unit BYW52 VR = VRRM 200 V BYW53 VR = VRRM 400 V BYW54 VR = VRRM 600 V BYW55 VR = VRRM 800 V BYW56 VR = VRRM 1000 V IFSM 50 A IFRM 12 A Average forward current ϕ = 180 ° IFAV 2 A Pulse avalanche peak power tp = 20 µs half sine wave, Tj = 175 °C PR 1000 W Document Number 86049 Rev. 1.6, 14-Apr-05 www.vishay.com 1 BYW52 / 53 / 54 / 55 / 56 Vishay Semiconductors Parameter Test condition Pulse energy in avalanche mode, non repetitive (inductive load switch off) Part I(BR)R = 1 A, Tj = 175 °C i2* t-rating Junction and storage temperature range Symbol Value Unit ER 20 mJ i2*t 8 A2*s Tj = Tstg - 55 to + 175 °C Maximum Thermal Resistance Tamb = 25 °C, unless otherwise specified Parameter Test condition Junction ambient Symbol Value Unit l = 10 mm, TL = constant RthJA 45 K/W on PC board with spacing 25 mm RthJA 100 K/W Electrical Characteristics Tamb = 25 °C, unless otherwise specified Typ. Max Forward voltage Parameter IF = 1 A Test condition VF 0.9 1.0 V Reverse current VR = VRRM IR 0.1 1 µA VR = VRRM, Tj = 100 °C IR 5 10 µA Breakdown voltage IR = 100 µA, tp/T = 0.01, tp = 0.3 ms V(BR) 1600 V Diode capacitance VR = 4 V, f = 1 MHz Reverse recovery time Reverse recovery charge Symbol Min CD 18 Unit pF µs IF = 0.5 A, IR = 1 A, iR = 0.25 A trr 4 IF = 1 A, di/dt = 5 A/µs, VR = 50 V trr 4 µs IF = 1 A, di/dt = 5 A/µs Qrr 200 nC 120 l l 10.000 – Forward Current (A) 100 80 TL= constant 60 20 0 0 5 94 9101 10 15 20 25 30 l - Lead Length ( mm ) Figure 1. Typ. Thermal Resistance vs. Lead Length www.vishay.com 2 Tj = 175 °C 0.100 Tj = 25 °C 0.010 F 40 1.000 I RthJA Therm. Resist. Junction/Ambient (K/W) Typical Characteristics (Tamb = 25 °C unless otherwise specified) 0.001 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 16350 V F – Forward Voltage ( V ) Figure 2. Forward Current vs. Forward Voltage Document Number 86049 Rev. 1.6, 14-Apr-05 BYW52 / 53 / 54 / 55 / 56 Vishay Semiconductors I FAV –Average Forward Current( A ) V R = VRRM half sinewave 2.0 RthJA = 45 K/W l = 10 mm 1.5 1.0 0.5 RthJA = 100 K/W PCB: d = 25 mm 0.0 0 20 40 60 300 200 150 PR–Limit @80 % VR 100 50 0 25 50 75 100 125 150 175 Tj – Junction Temperature ( °C ) Figure 5. Max. Reverse Power Dissipation vs. Junction Temperature 1000 40 CD – Diode Capacitance ( pF ) V R = VRRM I R – Reverse Current (A) PR–Limit @100 % VR 250 16353 Figure 3. Max. Average Forward Current vs. Ambient Temperature 100 10 1 25 f = 1 MHz 35 30 25 20 15 10 5 0 0.1 50 75 100 125 150 175 Tj – Junction Temperature (°C ) 16352 16354 1.0 10.0 V R – Reverse Voltage ( V ) 100.0 Figure 6. Diode Capacitance vs. Reverse Voltage Figure 4. Reverse Current vs. Junction Temperature Zthp–Thermal Resistance for PulseCond.(K/W) V R = VRRM 350 80 100 120 140 160 180 Tamb – Ambient Temperature (°C ) 16351 400 PR – Reverse Power Dissipation ( mW ) 2.5 1000 VRRM = 1000 V, RthJA = 100K/W 100 tp/T = 0.5 10 tp/T = 0.2 Tamb = 25°C tp/T = 0.1 Tamb = 45°C tp/T = 0.05 Tamb = 60 °C tp/T = 0.02 Tamb = 70°C tp/T = 0.01 Tamb = 100°C 1 10–5 10–4 94 9178 10–3 10–2 10–1 10 0 10 1 tp – Pulse Length ( s ) 10 0 10 1 102 I FRM – Repetitive Peak Forward Current ( A ) Figure 7. Thermal Response Document Number 86049 Rev. 1.6, 14-Apr-05 www.vishay.com 3 BYW52 / 53 / 54 / 55 / 56 Vishay Semiconductors Package Dimensions in mm (Inches) Sintered Glass Case SOD-57 3.6 (0.140)max. 94 9538 Cathode Identification ISO Method E 0.82 (0.032) max. 26(1.014) min. www.vishay.com 4 4.0 (0.156) max. 26(1.014) min. Document Number 86049 Rev. 1.6, 14-Apr-05 BYW52 / 53 / 54 / 55 / 56 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Document Number 86049 Rev. 1.6, 14-Apr-05 www.vishay.com 5 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1