Diodes SMD Type Switching Diode BAS16T;BAW56T BAV70T;BAV99T SOT-523 Unit: mm +0.1 1.6-0.1 +0.1 1.0-0.1 +0.05 0.2-0.05 +0.01 0.1-0.01 +0.05 0.8-0.05 1 +0.15 1.6-0.15 2 0.55 Features 0.35 3 +0.25 0.3-0.05 0.5 +0.1 -0.1 +0.1 0.8-0.1 +0.05 0.75-0.05 1. Base 2. Emitter 3. Collecter Absolute Maximum Ratings Ta = 25 Parameter (T a mb =25 Power dissipation ) Forward Current Reverse Voltage Operating and storage junction temperature range Symbol Limits Unit PD 150 mW IF 75 mA VR 85 V T J , T stg -55 to +150 Electrical Characteristics Ta = 25 Param eter Sym bol Reverse breakdown voltage V (BR) Reverse voltage leakage current Forward IR voltage VF Diode capacitance CD Reverse recovery tim e t rr Conditions Min I R = 100 85 A Max Unit V V R =75 V 2 V R =25 V 0.03 I F =1 m A 715 I F =10 m A 855 I F = 50 m A 1000 I F =150 m A 1250 V R =0 V,f=1MHz 1.5 pF 4 ns A mV Marking Type BAS16T BAW56T BAV70T BAV99T Marking A2 JD JJ JE www.kexin.com.cn 1