YFWDIODE ES1BBF Surface mount superfast recovery rectifier Datasheet

ES1ABF THRU ES1JBF
Surface Mount Superfast Recovery Rectifier
Reverse Voltage – 50 to 600 V
PINNING
Forward Current – 1 A
PIN
DESCRIPTION
1
Cathode
FEATURES
2
Anode
• For surface mounted applications
• Low profile package
• Glass Passivated Chip Junction
• Superfast reverse recovery time
• Lead free in comply with EU RoHS 2011/65/EU directives
1
2
Simplified outline SMBF and symbol
MECHANICAL DATA
• Case: SMBF
• Terminals: Solderable per MIL-STD-750, Method 2026
• A pprox. Weight: 57mg / 0.002oz
Absolute Maximum Ratings and Characteristics
Ratings at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Symbols
ES1ABF
ES1BBF
ES1CBF
ES1DBF
ES1EBF
ES1GBF
ES1JBF
Units
Maximum Repetitive Peak Reverse Voltage
V RRM
50
100
150
200
300
400
600
V
Maximum RMS voltage
V RMS
35
70
105
140
210
280
420
V
Maximum DC Blocking Voltage
V DC
50
100
150
200
300
400
600
V
Maximum Average Forward Rectified Current
at T L = 100 °C
I F(AV)
1
A
Peak Forward Surge Current 8.3 ms Single Half
Sine Wave Superimposed on Rated Load
(JEDEC Method)
I FSM
35
A
Maximum Forward Voltage at 1 A
VF
Parameter
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Ta = 25 °C
Ta =125 °C
Typical Junction Capacitance
at V R =4V, f=1MHz
Maximum Reverse Recovery Time
1)
Typical Thermal Resistance 2)
Operating and Storage Temperature Range
1.25
1
1.65
V
IR
5
100
μA
Cj
10
pF
t rr
35
ns
RθJA
85
°C/W
T j , T stg
-55 ~ +150
°C
1)Measured with IF = 0.5 A, IR = 1 A, Irr = 0.25 A
2
2)P.C.B. mounted with 0.5 X 0.5" (12.7 X 12.7 mm ) copper pad areas.
ES1ABF THRU ES1JBF
Fig.1 Reverse Recovery Time Characteristic And Test Circuit Diagram
50 ohm
Noninductive
10 ohm
Noninductive
t rr
+0.5
D.U.T
+
PULSE
GENERATOR
Note 2
25Vdc
approx
-
0
-0.25
1 ohm
OSCILLOSCOPE
Note 1
NonInductive
-1.0
Note:1.Rise Time = 7ns, max.
Input Impedance = 1megohm,22pF.
2. Ries Time =10ns, max.
Source Impedance = 50 ohms.
10ns/div
Set time Base for 10ns/div
Fig.3 Typical Reverse Characteristics
300
1.2
1.0
I R - Reverse Current ( μ A)
Average Forward Current (A)
Fig.2 Maximum Average Forward Current Rating
0.8
0.6
0.4
Single phase half wave resistive
or inductive P.C.B mounted on
0.5×0.5"(12.7×12.7mm ) pad areas.
0.2
100
T J =125°C
10
T J =75°C
1.0
T J =25°C
0.1
0.0
25
50
75
100
125
150
175
0
Lead Temperature (°C)
80
100
14
10
T J =25°C
Junction Capacitance ( pF)
Instaneous Forward Current (A)
60
Fig.5 Typical Junction Capacitance
1.0
ES1ABF~ES1DBF
ES1EBF/WS1GBF
0.1
ES1JBF
0.01
0.001
0
0.5
1.5
1.0
2.0
2.5
Instaneous Forward Voltage (V)
40
30
20
10
8.3 ms Single Half Sine Wave
(JEDEC Method)
1
10
Number of Cycles
12
10
8
6
T J =25°C
f = 1.0MHz
V sig = 50mV p-p
4
2
0.1
1
10
Reverse Voltage (V)
Fig.4 Maximum Non-Repetitive Peak
Forward Surage Current
Peak Forward Surage Current (A)
40
% of PIV.VOLTS
Fig.4 Typical Forward Characteristics
00
20
100
100
ES1ABF THRU ES1JBF
PACKAGE OUTLINE
Plastic surface mounted package; 2 leads
SMBF
∠ALL ROUND
C
A
∠ALL ROUND
D
E
A
V M
g
Top View
mil
Bottom View
A
C
D
E
HE
e
max
1.3
0.26
4.4
3.7
5.5
2.2
min
1.1
0.18
4.2
3.5
5.1
1.9
max
51
10
173
146
216
86
min
43
7
165
138
200
75
UNIT
mm
1.8(71)
2.54(100)
3.0(118)
g
∠
1.0
9°
40
Marking
The recommended mounting pad size
1.8(71)
g
pad
e
E
A
pad
HE
Unit:mm(mil)
Type number
Marking code
ES1ABF
E1AB
ES1BBF
E1BB
ES1CBF
E1CB
ES1DBF
E1DB
ES1EBF
E1EB
ES1GBF
E1GB
ES1JBF
E1JB
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