Panasonic MA746 Silicon epitaxial planar type Datasheet

Schottky Barrier Diodes (SBD)
MA4X746 (MA746)
Silicon epitaxial planar type
Unit: mm
2.90+0.02
–0.05
For super high speed switching
For small current rectification
1.9±0.2
0.16+0.1
–0.06
(0.95) (0.95)
4
2
1
0.60+0.10
–0.05
Rating
Unit
VR
50
V
Repetitive peak reverse-voltage
VRRM
50
V
Non-repetitive peak
IFSM
1
A
Single
forward-surge-current *2 Double *1
Peak forward
Single
current
Double *1
Average forward
Single
current
Double *1
1 : Cathode 1
2 : Cathode 2
3 : Anode 2
4 : Anode 1
EIAJ : SC-61
Mini4-G1 Package
Marking Symbol: M3M
0.75
IFM
1.1+0.3
–0.1
10°
+0.2
0 to 0.1 1.1–0.1
Reverse voltage (DC)
Symbol
0.4±0.2
(0.65)
(0.2)
■ Absolute Maximum Ratings Ta = 25°C
Parameter
5°
0.5R
2.8+0.2
–0.3
3
• Two isolated elements are contained in one package, allowing
high-density mounting
• IF(AV) = 200 mA and VR < 50 V are achieved
• Optimum for high frequency rectification because of its short
reverse recovery time (trr)
• Low forward voltage VF and good rectification efficiency
• Mini type 4-pin package
1.50+0.25
–0.05
■ Features
300
mA
Internal Connection
225
IF(AV)
200
mA
3
4
2
1
150
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
Note) *1: Value per chip
*2: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
■ Electrical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse current (DC)
IR
VR = 50 V
200
µA
Forward voltage (DC)
VF1
IF = 30 mA
0.36
V
VF2
IF = 200 mA
Terminal capacitance
Ct
VR = 0 V, f = 1 MHz
30
pF
Reverse recovery time *
trr
IF = IR = 100 mA
Irr = 10 mA, RL = 100 Ω
3.0
ns
0.55
Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
2. Rated input/output frequency: 2 GHz
3. *: trr measuring instrument
Bias Application Unit N-50BU
Input Pulse
tp
tr
Output Pulse
t
10%
A
VR
Pulse Generator
(PG-10N)
Rs = 50 Ω
Publication date: August 2001
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
IF
trr
t
Irr = 10 mA
IF = 100 mA
IR = 100 mA
RL = 100 Ω
Note) The part number in the parenthesis shows conventional part number.
SKH00107AED
1
MA4X746
IF  V F
IR  V R
103
VF  Ta
105
0.5
Ta = 150°C
IF = 200 mA
104
Ta = 150°C
100°C
10
25°C
1
10−1
10−2
0.4
103
100°C
102
25°C
0.1
0.2
0.3
0.4
0.5
1
0.6
0
Forward voltage VF (V)
10
20
30
40
50
60
IR  T a
Ct  VR
30
f = 1 MHz
Ta = 25°C
25
Terminal capacitance Ct (pF)
Reverse current IR (µA)
104
103
VR = 30 V
5V
102
10
1
−40
2
20
15
10
5
0
0
40
80
120
160
Ambient temperature Ta (°C)
200
0.2
30 mA
0
10
20
30
40
50
Reverse voltage VR (V)
SKH00107AED
0
−40
0
40
80
120
160
Ambient temperature Ta (°C)
Reverse voltage VR (V)
105
100 mA
0.3
0.1
10
0
Forward voltage VF (V)
−20°C
Reverse current IR (µA)
Forward current IF (mA)
102
60
200
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2001 MAR
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