Intersil HFA3128RZ Ultra high frequency transistor array Datasheet

HFA3046, HFA3096, HFA3127, HFA3128
®
Data Sheet
December 21, 2005
FN3076.13
Ultra High Frequency Transistor Arrays
Features
The HFA3046, HFA3096, HFA3127 and the HFA3128 are
Ultra High Frequency Transistor Arrays that are fabricated
from Intersil Corporation’s complementary bipolar UHF-1
process. Each array consists of five dielectrically isolated
transistors on a common monolithic substrate. The NPN
transistors exhibit a fT of 8GHz while the PNP transistors
provide a fT of 5.5GHz. Both types exhibit low noise (3.5dB),
making them ideal for high frequency amplifier and mixer
applications.
• NPN Transistor (fT) . . . . . . . . . . . . . . . . . . . . . . . . . 8GHz
The HFA3046 and HFA3127 are all NPN arrays while the
HFA3128 has all PNP transistors. The HFA3096 is an
NPN-PNP combination. Access is provided to each of the
terminals for the individual transistors for maximum
application flexibility. Monolithic construction of these
transistor arrays provides close electrical and thermal
matching of the five transistors.
Intersil provides an Application Note illustrating the use of
these devices as RF amplifiers. For more information, visit
our website at www.intersil.com.
• NPN Current Gain (hFE). . . . . . . . . . . . . . . . . . . . . . . . 130
• NPN Early Voltage (VA) . . . . . . . . . . . . . . . . . . . . . . . 50V
• PNP Transistor (fT). . . . . . . . . . . . . . . . . . . . . . . . . 5.5GHz
• PNP Current Gain (hFE). . . . . . . . . . . . . . . . . . . . . . . . . 60
• PNP Early Voltage (VA) . . . . . . . . . . . . . . . . . . . . . . . .20V
• Noise Figure (50Ω) at 1.0GHz . . . . . . . . . . . . . . . . . 3.5dB
• Collector to Collector Leakage . . . . . . . . . . . . . . . . . .<1pA
• Complete Isolation Between Transistors
• Pin Compatible with Industry Standard 3XXX Series
Arrays
• Pb-Free Plus Anneal Available (RoHS Compliant)
Applications
• VHF/UHF Amplifiers
• VHF/UHF Mixers
• IF Converters
• Synchronous Detectors
Ordering Information
PART NUMBER*
PART MARKING
TEMP. RANGE (°C)
PACKAGE
PKG. DWG. #
HFA3046B
HFA3046B
-55 to 125
14 Ld SOIC
M14.15
HFA3046BZ (Note)
HFA3046BZ
-55 to 125
14 Ld SOIC (Pb-free)
M14.15
HFA3096B
HFA3096B
-55 to 125
16 Ld SOIC
M16.15
HFA3096BZ (Note)
HFA3096BZ
-55 to 125
16 Ld SOIC (Pb-free)
M16.15
HFA3127B
HFA3127B
-55 to 125
16 Ld SOIC
M16.15
HFA3127BZ (Note)
HFA3127BZ
-55 to 125
16 Ld SOIC (Pb-free)
M16.15
HFA3127R
127
-55 to 125
16 Ld 3x3 QFN
L16.3x3
HFA3127RZ (Note)
127Z
-55 to 125
16 Ld 3x3 QFN (Pb-free)
L16.3x3
HFA3128B
HFA3128B
-55 to 125
16 Ld SOIC
M16.15
HFA3128BZ (Note)
HFA3128BZ
-55 to 125
16 Ld SOIC (Pb-free)
M16.15
HFA3128R
128
-55 to 125
16 Ld 3x3 QFN
L16.3x3
HFA3128RZ (Note)
128Z
-55 to 125
16 Ld 3x3 QFN (Pb-free)
L16.3x3
*Add “96” suffix for tape and reel.
NOTE: Intersil Pb-free plus anneal products employ special Pb-free material sets; molding compounds/die attach materials and 100% matte tin plate
termination finish, which are RoHS compliant and compatible with both SnPb and Pb-free soldering operations. Intersil Pb-free products are MSL
classified at Pb-free peak reflow temperatures that meet or exceed the Pb-free requirements of IPC/JEDEC J STD-020.
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774 | Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright Intersil Americas Inc. 1998, 2005. All Rights Reserved
All other trademarks mentioned are the property of their respective owners.
HFA3046, HFA3096, HFA3127, HFA3128
Pinouts
HFA3046
TOP VIEW
12
4
11
7
8
Q3
6
7
8
Q3
Q1
Q2
Q5
HFA3128
TOP VIEW
16
1
15
2
14
3
Q1
Q2
Q5
16
15
14
13
4
13
4
12
NC 5
12
NC 5
12
11
6
11
6
11
10
7
10
7
9
8
9
8
Q3
Q4
Q3
Q4
13
10
9
HFA3127, HFA3128
TOP VIEW
Q1B
9
3
16
15
14
13
Q2E 1
12 Q5B
Q2B 2
11 Q5E
NC 3
10 Q5C
Q3C 4
2
9
5
6
7
8
Q4E
6
Q4
2
14
Q1E
Q4
10
Q2
15
Q4B
5
5
1
Q1C
Q2
Q5
3
16 NC
Q3B
3
4
2
13
Q5
Q1
Q2C
2
1
14
Q1
HFA3127
TOP VIEW
Q3E
1
HFA3096
TOP VIEW
Q4C
FN3076.13
December 21, 2005
HFA3046, HFA3096, HFA3127, HFA3128
Absolute Maximum Ratings
Thermal Information
Collector to Emitter Voltage (Open Base) . . . . . . . . . . . . . . . . . . 8V
Collector to Base Voltage (Open Emitter) . . . . . . . . . . . . . . . . . 12V
Emitter to Base Voltage (Reverse Bias). . . . . . . . . . . . . . . . . . . 5.5V
Collector Current (100% Duty Cycle) . . . . . . 18.5mA at TJ = 150°C
34mA at TJ = 125°C
37mA at TJ = 110°C
Peak Collector Current (Any Condition). . . . . . . . . . . . . . . . . . 65mA
Thermal Resistance (Typical)
Operating Information
Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . -55°C to 125°C
θJA (°C/W)
θJC (°C/W)
14 Ld SOIC Package (Note 1) . . . . . . .
120
N/A
16 Ld SOIC Package (Note 1) . . . . . . .
115
N/A
QFN Package (Notes 2, 3). . . . . . . . . .
57
10
Maximum Power Dissipation (Any One Transistor) . . . . . . . . 0.15W
Maximum Junction Temperature (Die) . . . . . . . . . . . . . . . . . . . 175°C
Maximum Junction Temperature (Plastic Package) . . . . . . . 150°C
Maximum Storage Temperature Range . . . . . . . . . . -65°C to 150°C
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . 300°C
(SOIC - Lead Tips Only)
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. θJA is measured with the component mounted on an evaluation PC board in free air.
2. For θJC, the “case temp” location is the center of the exposed metal pad on the package underside.
3. θJA is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
Electrical Specifications
TA = 25°C
DIE
PARAMETER
TEST CONDITIONS
SOIC, QFN
MIN
TYP
MAX
MIN
TYP
MAX
UNITS
DC NPN CHARACTERISTICS
Collector to Base Breakdown
Voltage, V(BR)CBO
IC = 100µA, IE = 0
12
18
-
12
18
-
V
Collector to Emitter Breakdown
Voltage, V(BR)CEO
IC = 100µA, IB = 0
8
12
-
8
12
-
V
Collector to Emitter Breakdown
Voltage, V(BR)CES
IC = 100µA, Base Shorted to Emitter
10
20
-
10
20
-
V
Emitter to Base Breakdown
Voltage, V(BR)EBO
IE = 10µA, IC = 0
5.5
6
-
5.5
6
-
V
Collector-Cutoff-Current, ICEO
VCE = 6V, IB = 0
-
2
100
-
2
100
nA
Collector-Cutoff-Current, ICBO
VCB = 8V, IE = 0
-
0.1
10
-
0.1
10
nA
Collector to Emitter Saturation
Voltage, VCE(SAT)
IC = 10mA, IB = 1mA
-
0.3
0.5
-
0.3
0.5
V
Base to Emitter Voltage, VBE
IC = 10mA
-
0.85
0.95
-
0.85
0.95
V
DC Forward-Current Transfer
Ratio, hFE
IC = 10mA, VCE = 2V
40
130
-
40
130
-
Early Voltage, VA
IC = 1mA, VCE = 3.5V
20
50
-
20
50
-
V
Base to Emitter Voltage Drift
IC = 10mA
-
-1.5
-
-
-1.5
-
mV/°C
-
1
-
-
1
-
pA
Collector to Collector Leakage
Electrical Specifications
TA = 25°C
DIE
PARAMETER
TEST CONDITIONS
SOIC, QFN
MIN
TYP
MAX
MIN
TYP
MAX
UNITS
DYNAMIC NPN CHARACTERISTICS
Noise Figure
f = 1.0GHz, VCE = 5V,
IC = 5mA, ZS = 50Ω
-
3.5
-
-
3.5
-
dB
fT Current Gain-Bandwidth
Product
IC = 1mA, VCE = 5V
-
5.5
-
-
5.5
-
GHz
IC = 10mA, VCE = 5V
-
8
-
-
8
-
GHz
3
FN3076.13
December 21, 2005
HFA3046, HFA3096, HFA3127, HFA3128
Electrical Specifications
TA = 25°C (Continued)
DIE
PARAMETER
TEST CONDITIONS
SOIC, QFN
MIN
TYP
MAX
MIN
TYP
MAX
UNITS
Power Gain-Bandwidth Product,
fMAX
IC = 10mA, VCE = 5V
-
6
-
-
2.5
-
GHz
Base to Emitter Capacitance
VBE = -3V
-
200
-
-
500
-
fF
Collector to Base Capacitance
VCB = 3V
-
200
-
-
500
-
fF
Electrical Specifications
TA = 25°C
DIE
PARAMETER
TEST CONDITIONS
SOIC, QFN
MIN
TYP
MAX
MIN
TYP
MAX
UNITS
DC PNP CHARACTERISTICS
Collector to Base Breakdown
Voltage, V(BR)CBO
IC = -100µA, IE = 0
10
15
-
10
15
-
V
Collector to Emitter Breakdown
Voltage, V(BR)CEO
IC = -100µA, IB = 0
8
15
-
8
15
-
V
Collector to Emitter Breakdown
Voltage, V(BR)CES
IC = -100µA, Base Shorted to Emitter
10
15
-
10
15
-
V
Emitter to Base Breakdown
Voltage, V(BR)EBO
IE = -10µA, IC = 0
4.5
5
-
4.5
5
-
V
Collector Cutoff Current, ICEO
VCE = -6V, IB = 0
-
2
100
-
2
100
nA
Collector Cutoff Current, ICBO
VCB = -8V, IE = 0
-
0.1
10
-
0.1
10
nA
Collector to Emitter Saturation
Voltage, VCE(SAT)
IC = -10mA, IB = -1mA
-
0.3
0.5
-
0.3
0.5
V
Base to Emitter Voltage, VBE
IC = -10mA
-
0.85
0.95
-
0.85
0.95
V
DC Forward-Current Transfer
Ratio, hFE
IC = -10mA, VCE = -2V
20
60
-
20
60
-
Early Voltage, VA
IC = -1mA, VCE = -3.5V
10
20
-
10
20
-
V
Base to Emitter Voltage Drift
IC = -10mA
-
-1.5
-
-
-1.5
-
mV/°C
-
1
-
-
1
-
pA
Collector to Collector Leakage
Electrical Specifications
TA = 25°C
DIE
PARAMETER
TEST CONDITIONS
SOIC, QFN
MIN
TYP
MAX
MIN
TYP
MAX
UNITS
DYNAMIC PNP CHARACTERISTICS
Noise Figure
f = 1.0GHz, VCE = -5V,
IC = -5mA, ZS = 50Ω
-
3.5
-
-
3.5
-
dB
fT Current Gain-Bandwidth
Product
IC = -1mA, VCE = -5V
-
2
-
-
2
-
GHz
IC = -10mA, VCE = -5V
-
5.5
-
-
5.5
-
GHz
Power Gain-Bandwidth
Product
IC = -10mA, VCE = -5V
-
3
-
-
2
-
GHz
Base to Emitter Capacitance
VBE = 3V
-
200
-
-
500
-
fF
Collector to Base Capacitance
VCB = -3V
-
300
-
-
600
-
fF
4
FN3076.13
December 21, 2005
HFA3046, HFA3096, HFA3127, HFA3128
Electrical Specifications
TA = 25°C (Continued)
DIE
PARAMETER
TEST CONDITIONS
SOIC, QFN
MIN
TYP
MAX
MIN
TYP
MAX
UNITS
DIFFERENTIAL PAIR MATCHING CHARACTERISTICS FOR THE HFA3046
Input Offset Voltage
IC = 10mA, VCE = 5V
-
1.5
5.0
-
1.5
5.0
mV
Input Offset Current
IC = 10mA, VCE = 5V
-
5
25
-
5
25
µA
Input Offset Voltage TC
IC = 10mA, VCE = 5V
-
0.5
-
-
0.5
-
µV/°C
S-Parameter and PSPICE model data is available from Intersil Sales Offices, and Intersil Corporation’s web site.
Common Emitter S-Parameters of NPN 3 µm x 50 µm Transistor
FREQ. (Hz)
|S11|
PHASE(S11)
|S21|
PHASE(S21)
|S12|
PHASE(S12)
|S22|
PHASE(S22)
VCE = 5V and IC = 5mA
1.0E+08
0.83
-11.78
11.07
168.57
1.41E-02
78.88
0.97
-11.05
2.0E+08
0.79
-22.82
10.51
157.89
2.69E-02
68.63
0.93
-21.35
3.0E+08
0.73
-32.64
9.75
148.44
3.75E-02
59.58
0.86
-30.44
4.0E+08
0.67
-41.08
8.91
140.36
4.57E-02
51.90
0.79
-38.16
5.0E+08
0.61
-48.23
8.10
133.56
5.19E-02
45.50
0.73
-44.59
6.0E+08
0.55
-54.27
7.35
127.88
5.65E-02
40.21
0.67
-49.93
7.0E+08
0.50
-59.41
6.69
123.10
6.00E-02
35.82
0.62
-54.37
8.0E+08
0.46
-63.81
6.11
119.04
6.27E-02
32.15
0.57
-58.10
9.0E+08
0.42
-67.63
5.61
115.57
6.47E-02
29.07
0.53
-61.25
1.0E+09
0.39
-70.98
5.17
112.55
6.63E-02
26.45
0.50
-63.96
1.1E+09
0.36
-73.95
4.79
109.91
6.75E-02
24.19
0.47
-66.31
1.2E+09
0.34
-76.62
4.45
107.57
6.85E-02
22.24
0.45
-68.37
1.3E+09
0.32
-79.04
4.15
105.47
6.93E-02
20.53
0.43
-70.19
1.4E+09
0.30
-81.25
3.89
103.57
7.00E-02
19.02
0.41
-71.83
1.5E+09
0.28
-83.28
3.66
101.84
7.05E-02
17.69
0.40
-73.31
1.6E+09
0.27
-85.17
3.45
100.26
7.10E-02
16.49
0.39
-74.66
1.7E+09
0.25
-86.92
3.27
98.79
7.13E-02
15.41
0.38
-75.90
1.8E+09
0.24
-88.57
3.10
97.43
7.17E-02
14.43
0.37
-77.05
1.9E+09
0.23
-90.12
2.94
96.15
7.19E-02
13.54
0.36
-78.12
2.0E+09
0.22
-91.59
2.80
94.95
7.21E-02
12.73
0.35
-79.13
2.1E+09
0.21
-92.98
2.68
93.81
7.23E-02
11.98
0.35
-80.09
2.2E+09
0.20
-94.30
2.56
92.73
7.25E-02
11.29
0.34
-80.99
2.3E+09
0.20
-95.57
2.45
91.70
7.27E-02
10.64
0.34
-81.85
2.4E+09
0.19
-96.78
2.35
90.72
7.28E-02
10.05
0.33
-82.68
2.5E+09
0.18
-97.93
2.26
89.78
7.29E-02
9.49
0.33
-83.47
2.6E+09
0.18
-99.05
2.18
88.87
7.30E-02
8.96
0.33
-84.23
2.7E+09
0.17
-100.12
2.10
88.00
7.31E-02
8.47
0.33
-84.97
2.8E+09
0.17
-101.15
2.02
87.15
7.31E-02
8.01
0.33
-85.68
2.9E+09
0.16
-102.15
1.96
86.33
7.32E-02
7.57
0.33
-86.37
3.0E+09
0.16
-103.11
1.89
85.54
7.32E-02
7.16
0.33
-87.05
5
FN3076.13
December 21, 2005
HFA3046, HFA3096, HFA3127, HFA3128
Common Emitter S-Parameters of NPN 3 µm x 50 µm Transistor
FREQ. (Hz)
|S11|
(Continued)
PHASE(S11)
|S21|
PHASE(S21)
|S12|
PHASE(S12)
|S22|
PHASE(S22)
VCE = 5V and IC = 10mA
1.0E+08
0.72
-16.43
15.12
165.22
1.27E-02
75.41
0.95
-14.26
2.0E+08
0.67
-31.26
13.90
152.04
2.34E-02
62.89
0.88
-26.95
3.0E+08
0.60
-43.76
12.39
141.18
3.13E-02
52.58
0.79
-37.31
4.0E+08
0.53
-54.00
10.92
132.57
3.68E-02
44.50
0.70
-45.45
5.0E+08
0.47
-62.38
9.62
125.78
4.05E-02
38.23
0.63
-51.77
6.0E+08
0.42
-69.35
8.53
120.37
4.31E-02
33.34
0.57
-56.72
7.0E+08
0.37
-75.26
7.62
116.00
4.49E-02
29.47
0.51
-60.65
8.0E+08
0.34
-80.36
6.86
112.39
4.63E-02
26.37
0.47
-63.85
9.0E+08
0.31
-84.84
6.22
109.36
4.72E-02
23.84
0.44
-66.49
1.0E+09
0.29
-88.83
5.69
106.77
4.80E-02
21.75
0.41
-68.71
1.1E+09
0.27
-92.44
5.23
104.51
4.86E-02
20.00
0.39
-70.62
1.2E+09
0.25
-95.73
4.83
102.53
4.90E-02
18.52
0.37
-72.28
1.3E+09
0.24
-98.75
4.49
100.75
4.94E-02
17.25
0.35
-73.76
1.4E+09
0.22
-101.55
4.19
99.16
4.97E-02
16.15
0.34
-75.08
1.5E+09
0.21
-104.15
3.93
97.70
4.99E-02
15.19
0.33
-76.28
1.6E+09
0.20
-106.57
3.70
96.36
5.01E-02
14.34
0.32
-77.38
1.7E+09
0.20
-108.85
3.49
95.12
5.03E-02
13.60
0.31
-78.41
1.8E+09
0.19
-110.98
3.30
93.96
5.05E-02
12.94
0.31
-79.37
1.9E+09
0.18
-113.00
3.13
92.87
5.06E-02
12.34
0.30
-80.27
2.0E+09
0.18
-114.90
2.98
91.85
5.07E-02
11.81
0.30
-81.13
2.1E+09
0.17
-116.69
2.84
90.87
5.08E-02
11.33
0.30
-81.95
2.2E+09
0.17
-118.39
2.72
89.94
5.09E-02
10.89
0.29
-82.74
2.3E+09
0.16
-120.01
2.60
89.06
5.10E-02
10.50
0.29
-83.50
2.4E+09
0.16
-121.54
2.49
88.21
5.11E-02
10.13
0.29
-84.24
2.5E+09
0.16
-122.99
2.39
87.39
5.12E-02
9.80
0.29
-84.95
2.6E+09
0.15
-124.37
2.30
86.60
5.12E-02
9.49
0.29
-85.64
2.7E+09
0.15
-125.69
2.22
85.83
5.13E-02
9.21
0.29
-86.32
2.8E+09
0.15
-126.94
2.14
85.09
5.13E-02
8.95
0.29
-86.98
2.9E+09
0.15
-128.14
2.06
84.36
5.14E-02
8.71
0.29
-87.62
3.0E+09
0.14
-129.27
1.99
83.66
5.15E-02
8.49
0.29
-88.25
Common Emitter S-Parameters of PNP 3 µm x 50 µm Transistor
FREQ. (Hz)
|S11|
PHASE(S11)
|S21|
PHASE(S21)
|S12|
PHASE(S12)
|S22|
PHASE(S22)
VCE = -5V and IC = -5mA
1.0E+08
0.72
-16.65
10.11
166.77
1.66E-02
77.18
0.96
-10.76
2.0E+08
0.68
-32.12
9.44
154.69
3.10E-02
65.94
0.90
-20.38
3.0E+08
0.62
-45.73
8.57
144.40
4.23E-02
56.39
0.82
-28.25
4.0E+08
0.57
-57.39
7.68
135.95
5.05E-02
48.66
0.74
-34.31
5.0E+08
0.52
-67.32
6.86
129.11
5.64E-02
42.52
0.67
-38.81
6
FN3076.13
December 21, 2005
HFA3046, HFA3096, HFA3127, HFA3128
Common Emitter S-Parameters of PNP 3 µm x 50 µm Transistor
(Continued)
FREQ. (Hz)
|S11|
PHASE(S11)
|S21|
PHASE(S21)
|S12|
PHASE(S12)
|S22|
PHASE(S22)
6.0E+08
0.47
-75.83
6.14
123.55
6.07E-02
37.66
0.61
-42.10
7.0E+08
0.43
-83.18
5.53
118.98
6.37E-02
33.79
0.55
-44.47
8.0E+08
0.40
-89.60
5.01
115.17
6.60E-02
30.67
0.51
-46.15
9.0E+08
0.38
-95.26
4.56
111.94
6.77E-02
28.14
0.47
-47.33
1.0E+09
0.36
-100.29
4.18
109.17
6.91E-02
26.06
0.44
-48.15
1.1E+09
0.34
-104.80
3.86
106.76
7.01E-02
24.33
0.41
-48.69
1.2E+09
0.33
-108.86
3.58
104.63
7.09E-02
22.89
0.39
-49.05
1.3E+09
0.32
-112.53
3.33
102.72
7.16E-02
21.67
0.37
-49.26
1.4E+09
0.30
-115.86
3.12
101.01
7.22E-02
20.64
0.36
-49.38
1.5E+09
0.30
-118.90
2.92
99.44
7.27E-02
19.76
0.34
-49.43
1.6E+09
0.29
-121.69
2.75
98.01
7.32E-02
19.00
0.33
-49.44
1.7E+09
0.28
-124.24
2.60
96.68
7.35E-02
18.35
0.32
-49.43
1.8E+09
0.28
-126.59
2.47
95.44
7.39E-02
17.79
0.31
-49.40
1.9E+09
0.27
-128.76
2.34
94.29
7.42E-02
17.30
0.30
-49.38
2.0E+09
0.27
-130.77
2.23
93.19
7.45E-02
16.88
0.30
-49.36
2.1E+09
0.26
-132.63
2.13
92.16
7.47E-02
16.52
0.29
-49.35
2.2E+09
0.26
-134.35
2.04
91.18
7.50E-02
16.20
0.28
-49.35
2.3E+09
0.26
-135.96
1.95
90.24
7.52E-02
15.92
0.28
-49.38
2.4E+09
0.25
-137.46
1.87
89.34
7.55E-02
15.68
0.28
-49.42
2.5E+09
0.25
-138.86
1.80
88.48
7.57E-02
15.48
0.27
-49.49
2.6E+09
0.25
-140.17
1.73
87.65
7.59E-02
15.30
0.27
-49.56
2.7E+09
0.25
-141.39
1.67
86.85
7.61E-02
15.15
0.26
-49.67
2.8E+09
0.25
-142.54
1.61
86.07
7.63E-02
15.01
0.26
-49.81
2.9E+09
0.24
-143.62
1.56
85.31
7.65E-02
14.90
0.26
-49.96
3.0E+09
0.24
-144.64
1.51
84.58
7.67E-02
14.81
0.26
-50.13
VCE = -5V, IC = -10mA
1.0E+08
0.58
-23.24
13.03
163.45
1.43E-02
73.38
0.93
-13.46
2.0E+08
0.53
-44.07
11.75
149.11
2.58E-02
60.43
0.85
-24.76
3.0E+08
0.48
-61.50
10.25
137.78
3.38E-02
50.16
0.74
-33.10
4.0E+08
0.43
-75.73
8.88
129.12
3.90E-02
42.49
0.65
-38.83
5.0E+08
0.40
-87.36
7.72
122.49
4.25E-02
36.81
0.58
-42.63
6.0E+08
0.37
-96.94
6.78
117.33
4.48E-02
32.59
0.51
-45.07
7.0E+08
0.35
-104.92
6.01
113.22
4.64E-02
29.39
0.47
-46.60
8.0E+08
0.33
-111.64
5.39
109.85
4.76E-02
26.94
0.43
-47.49
9.0E+08
0.32
-117.36
4.87
107.05
4.85E-02
25.04
0.40
-47.97
1.0E+09
0.31
-122.27
4.44
104.66
4.92E-02
23.55
0.37
-48.18
1.1E+09
0.30
-126.51
4.07
102.59
4.97E-02
22.37
0.35
-48.20
1.2E+09
0.30
-130.21
3.76
100.76
5.02E-02
21.44
0.33
-48.11
7
FN3076.13
December 21, 2005
HFA3046, HFA3096, HFA3127, HFA3128
Common Emitter S-Parameters of PNP 3 µm x 50 µm Transistor
(Continued)
FREQ. (Hz)
|S11|
PHASE(S11)
|S21|
PHASE(S21)
|S12|
PHASE(S12)
|S22|
PHASE(S22)
1.3E+09
0.29
-133.46
3.49
99.14
5.06E-02
20.70
0.32
-47.95
1.4E+09
0.29
-136.33
3.25
97.67
5.09E-02
20.11
0.31
-47.77
1.5E+09
0.28
-138.89
3.05
96.33
5.12E-02
19.65
0.30
-47.58
1.6E+09
0.28
-141.17
2.87
95.10
5.15E-02
19.29
0.29
-47.39
1.7E+09
0.28
-143.21
2.70
93.96
5.18E-02
19.01
0.28
-47.23
1.8E+09
0.28
-145.06
2.56
92.90
5.21E-02
18.80
0.27
-47.09
1.9E+09
0.27
-146.73
2.43
91.90
5.23E-02
18.65
0.27
-46.98
2.0E+09
0.27
-148.26
2.31
90.95
5.26E-02
18.55
0.26
-46.91
2.1E+09
0.27
-149.65
2.20
90.05
5.28E-02
18.49
0.26
-46.87
2.2E+09
0.27
-150.92
2.10
89.20
5.30E-02
18.46
0.25
-46.87
2.3E+09
0.27
-152.10
2.01
88.37
5.33E-02
18.47
0.25
-46.90
2.4E+09
0.27
-153.18
1.93
87.59
5.35E-02
18.50
0.25
-46.97
2.5E+09
0.27
-154.17
1.86
86.82
5.38E-02
18.55
0.24
-47.07
2.6E+09
0.26
-155.10
1.79
86.09
5.40E-02
18.62
0.24
-47.18
2.7E+09
0.26
-155.96
1.72
85.38
5.42E-02
18.71
0.24
-47.34
2.8E+09
0.26
-156.76
1.66
84.68
5.45E-02
18.80
0.24
-47.55
2.9E+09
0.26
-157.51
1.60
84.01
5.47E-02
18.91
0.24
-47.76
3.0E+09
0.26
-158.21
1.55
83.35
5.50E-02
19.03
0.23
-48.00
25
IB = 200µA
20
IB = 160µA
100m
10m
IB =120µA
15
IB = 80µA
10
IB = 40µA
5
0
COLLECTOR CURRENT
AND BASE CURRENT (A)
COLLECTOR CURRENT (mA)
Typical Performance Curves
1m
VCE = 3V
IC
IB
100µ
10µ
1µ
100n
10n
1
2
3
4
5
COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 1. NPN COLLECTOR CURRENT vs COLLECTOR TO
EMITTER VOLTAGE
8
1n
0.5
0.6
0.7
0.8
0.9
BASE TO EMITTER VOLTAGE (V)
1.0
FIGURE 2. NPN COLLECTOR CURRENT AND BASE
CURRENT vs BASE TO EMITTER VOLTAGE
FN3076.13
December 21, 2005
HFA3046, HFA3096, HFA3127, HFA3128
Typical Performance Curves
(Continued)
10.0
GAIN BANDWIDTH PRODUCT (GHz)
VCE = 3V
160
DC CURRENT GAIN
140
120
100
80
60
40
20
0
1µ
10µ
100µ
1m
10m
8.0
VCE = 5V
6.0
VCE = 1V
4.0
2.0
0
0.1
100m
FIGURE 3. NPN DC CURRENT GAIN vs COLLECTOR CURRENT
VCE = -3V
100
IC
-10m
IB = -320µA
COLLECTOR CURRENT
AND BASE CURRENT (A)
COLLECTOR CURRENT (mA)
-100m
IB = -240µA
-15
IB = -160µA
-10
IB = -80µA
-5
IB
-1m
-100µ
-10µ
-1µ
-100n
-10n
0
0
-1
-2
-3
-4
-1n
-0.5
-5
FIGURE 5. PNP COLLECTOR CURRENT vs COLLECTOR TO
EMITTER VOLTAGE
-0.8
-0.9
-1.0
FIGURE 6. PNP COLLECTOR CURRENT AND BASE
CURRENT vs BASE TO EMITTER VOLTAGE
GAIN BANDWIDTH PRODUCT (GHz)
160
140
120
100
80
60
40
20
-10µ
-0.7
5.0
VCE = -3V
0
-1µ
-0.6
BASE TO EMITTER VOLTAGE (V)
COLLECTOR TO EMITTER VOLTAGE (V)
DC CURRENT GAIN
10
FIGURE 4. NPN GAIN BANDWIDTH PRODUCT vs COLLECTOR
CURRENT (UHF 3 x 50 WITH BOND PADS)
IB = -400µA
-20
1.0
COLLECTOR CURRENT (mA)
COLLECTOR CURRENT (A)
-25
VCE = 3V
-100µ
-1m
-10m
COLLECTOR CURRENT (A)
FIGURE 7. PNP DC CURRENT GAIN vs COLLECTOR
CURRENT
9
-100m
VCE = -5V
4.0
VCE = -3V
3.0
VCE = -1V
2.0
1.0
-0.1
-1.0
-10
-100
COLLECTOR CURRENT (mA)
FIGURE 8. PNP GAIN BANDWIDTH PRODUCT vs COLLECTOR
CURRENT (UHF 3 x 50 WITH BOND PADS)
FN3076.13
December 21, 2005
HFA3046, HFA3096, HFA3127, HFA3128
Die Characteristics
DIE DIMENSIONS:
PASSIVATION:
53 mils x 52 mils x 19 mils
1340µm x 1320µm x 483µm
Type: Nitride
Thickness: 4kÅ ±0.5kÅ
METALLIZATION:
PROCESS:
Type: Metal 1: AlCu(2%)/TiW
Thickness: Metal 1: 8kÅ ±0.4kÅ
Type: Metal 2: AlCu(2%)
Thickness: Metal 2: 16kÅ ±0.8kÅ
UHF-1
SUBSTRATE POTENTIAL: (POWERED UP)
Unbiased
Metallization Mask Layout
HFA3096, HFA3127, HFA3128
2
1340µm
(53 mils)
1
16
15
3
14
4
13
5
12
6
11
7
8
9
10
1320µm
(52 mils)
HFA3046
2
1
14
13
3
1340µm
(53 mils)
12
4
5
11
6
10
7
8
9
1320µm
(52 mils)
Pad numbers correspond to SOIC pinout.
10
FN3076.13
December 21, 2005
HFA3046, HFA3096, HFA3127, HFA3128
Small Outline Plastic Packages (SOIC)
M14.15 (JEDEC MS-012-AB ISSUE C)
N
INDEX
AREA
H
0.25(0.010) M
14 LEAD NARROW BODY SMALL OUTLINE PLASTIC
PACKAGE
B M
E
INCHES
-B-
1
2
3
L
SEATING PLANE
-A-
h x 45o
A
D
-C-
e
α
A1
B
0.25(0.010) M
C A M
SYMBOL
MIN
MAX
MIN
MAX
NOTES
A
0.0532
0.0688
1.35
1.75
-
A1
0.0040
0.0098
0.10
0.25
-
B
0.013
0.020
0.33
0.51
9
C
0.0075
0.0098
0.19
0.25
-
D
0.3367
0.3444
8.55
8.75
3
E
0.1497
0.1574
3.80
4.00
4
e
C
0.10(0.004)
B S
0.050 BSC
1. Symbols are defined in the “MO Series Symbol List” in Section 2.2 of
Publication Number 95.
1.27 BSC
-
H
0.2284
0.2440
5.80
6.20
-
h
0.0099
0.0196
0.25
0.50
5
L
0.016
0.050
0.40
1.27
6
N
NOTES:
MILLIMETERS
α
14
0°
14
8°
0°
7
8°
Rev. 0 12/93
2. Dimensioning and tolerancing per ANSI Y14.5M-1982.
3. Dimension “D” does not include mold flash, protrusions or gate burrs.
Mold flash, protrusion and gate burrs shall not exceed 0.15mm (0.006
inch) per side.
4. Dimension “E” does not include interlead flash or protrusions. Interlead
flash and protrusions shall not exceed 0.25mm (0.010 inch) per side.
5. The chamfer on the body is optional. If it is not present, a visual index
feature must be located within the crosshatched area.
6. “L” is the length of terminal for soldering to a substrate.
7. “N” is the number of terminal positions.
8. Terminal numbers are shown for reference only.
9. The lead width “B”, as measured 0.36mm (0.014 inch) or greater
above the seating plane, shall not exceed a maximum value of
0.61mm (0.024 inch).
10. Controlling dimension: MILLIMETER. Converted inch dimensions
are not necessarily exact.
11
FN3076.13
December 21, 2005
HFA3046, HFA3096, HFA3127, HFA3128
Small Outline Plastic Packages (SOIC)
M16.15 (JEDEC MS-012-AC ISSUE C)
N
INDEX
AREA
H
0.25(0.010) M
16 LEAD NARROW BODY SMALL OUTLINE PLASTIC PACKAGE
B M
INCHES
E
-B-
1
2
3
L
SEATING PLANE
-A-
A
D
h x 45°
-C-
e
A1
B
0.25(0.010) M
C
0.10(0.004)
C A M
SYMBOL
MIN
MAX
MIN
MAX
NOTES
A
0.0532
0.0688
1.35
1.75
-
A1
0.0040
0.0098
0.10
0.25
-
B
0.013
0.020
0.33
0.51
9
C
0.0075
0.0098
0.19
0.25
-
D
0.3859
0.3937
9.80
10.00
3
E
0.1497
0.1574
3.80
4.00
4
e
α
B S
1. Symbols are defined in the “MO Series Symbol List” in Section 2.2 of
Publication Number 95.
0.050 BSC
1.27 BSC
-
H
0.2284
0.2440
5.80
6.20
-
h
0.0099
0.0196
0.25
0.50
5
L
0.016
0.050
0.40
1.27
6
N
α
NOTES:
MILLIMETERS
16
0°
16
8°
0°
7
8°
Rev. 1 6/05
2. Dimensioning and tolerancing per ANSI Y14.5M-1982.
3. Dimension “D” does not include mold flash, protrusions or gate burrs.
Mold flash, protrusion and gate burrs shall not exceed 0.15mm (0.006
inch) per side.
4. Dimension “E” does not include interlead flash or protrusions. Interlead
flash and protrusions shall not exceed 0.25mm (0.010 inch) per side.
5. The chamfer on the body is optional. If it is not present, a visual index
feature must be located within the crosshatched area.
6. “L” is the length of terminal for soldering to a substrate.
7. “N” is the number of terminal positions.
8. Terminal numbers are shown for reference only.
9. The lead width “B”, as measured 0.36mm (0.014 inch) or greater above
the seating plane, shall not exceed a maximum value of 0.61mm
(0.024 inch).
10. Controlling dimension: MILLIMETER. Converted inch dimensions are
not necessarily exact.
12
FN3076.13
December 21, 2005
HFA3046, HFA3096, HFA3127, HFA3128
Quad Flat No-Lead Plastic Package (QFN)
Micro Lead Frame Plastic Package (MLFP)
L16.3x3
16 LEAD QUAD FLAT NO-LEAD PLASTIC PACKAGE
2X
MILLIMETERS
0.15 C A
D
A
9
D/2
D1
D1/2
2X
N
6
INDEX
AREA
0.15 C B
1
2
3
E1/2
E
9
2X
B
TOP VIEW
0.15 C A
A
0.90
1.00
-
-
-
0.05
-
A2
-
-
1.00
9
A3
0.20 REF
0.18
0
A3
SIDE VIEW
9
5
NX b
4X P
D1
2.75 BSC
9
1.35
1.50
1.65
7, 8, 10
3.00 BSC
-
2.75 BSC
1.35
1.50
9
1.65
7, 8, 10
0.50 BSC
-
k
0.20
-
-
-
L
0.30
0.40
0.50
8
N
16
2
Nd
4
3
Ne
P
-
-
0.60
NX k
θ
-
-
12
D2
2 N
5, 8
-
8
7
4
3
9
9
Rev. 1 6/04
4X P
NOTES:
1
(DATUM A)
2
3
6
INDEX
AREA
NX L
N e
1. Dimensioning and tolerancing conform to ASME Y14.5-1994.
(Ne-1)Xe
REF.
E2
E2/2
2. N is the number of terminals.
7
3. Nd and Ne refer to the number of terminals on each D and E.
8
4. All dimensions are in millimeters. Angles are in degrees.
5. Dimension b applies to the metallized terminal and is measured
between 0.15mm and 0.30mm from the terminal tip.
9
CORNER
OPTION 4X
(Nd-1)Xe
REF.
6. The configuration of the pin #1 identifier is optional, but must be
located within the zone indicated. The pin #1 identifier may be
either a mold or mark feature.
BOTTOM VIEW
A1
7. Dimensions D2 and E2 are for the exposed pads which provide
improved electrical and thermal performance.
NX b
5
8. Nominal dimensions are provided to assist with PCB Land
Pattern Design efforts, see Intersil Technical Brief TB389.
SECTION "C-C"
C
L
9. Features and dimensions A2, A3, D1, E1, P & θ are present when
Anvil singulation method is used and not present for saw
singulation.
C
L
L1
0.30
3.00 BSC
0.10 M C A B
D2
(DATUM B)
A1
0.23
9
D
e
0.08 C
SEATING PLANE
C C
0.80
E1
/ / 0.10 C
C
NOTES
A
E2
A2
MAX
A1
E
0.15 C B
8
NOMINAL
D2
2X
4X
MIN
b
E/2
E1
SYMBOL
10
L
e
L1
10
L
10. Compliant to JEDEC MO-220VEED-2 Issue C, except for the E2
and D2 MAX dimension.
e
TERMINAL TIP
FOR ODD TERMINAL/SIDE
FOR EVEN TERMINAL/SIDE
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Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com
13
FN3076.13
December 21, 2005
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