DMG6898LSD DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS(on) max ID max TA = +25°C Low On-Resistance Low Input Capacitance 16mΩ @ VGS = 10V 9.8A Fast Switching Speed 23mΩ @ VGS = 4.5V 8.7A Low Input/Output Leakage ESD Protected Up To 2kV Description Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) This MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) V(BR)DSS 30V NEW PRODUCT Features ideal for high efficiency power management applications. Mechanical Data Applications Backlighting Power Management Functions DC-DC Converters ESD PROTECTED TO 2kV Case: SO-8 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Below Weight: 0.072 grams (Approximate) D1 G1 D1 S1 D2 G2 D2 S2 Top View Internal Schematic Top View Ordering Information (Notes 4 & 5) Part Number DMG6898LSD-13 DMG6898LSDQ-13 Notes: Qualification Commercial Automotive Case SO-8 SO-8 Packaging 2,500 / Tape & Reel 2,500 / Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/. 5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information 8 5 = Manufacturer’s Marking G6898LD = Product Type Marking Code YYWW = Date Code Marking YY or YY = Year (ex: 14 = 2014) WW = Week (01 - 53) G6898LD YY WW 1 DMG6898LSD Document number: DS31947 Rev. 6 - 2 4 1 of 6 www.diodes.com November 2014 © Diodes Incorporated DMG6898LSD Maximum Ratings @TA = +25°C unless otherwise specified NEW PRODUCT Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Steady State Continuous Drain Current (Note 6) Unit V V IDM Value 20 ±12 9.5 7.1 30 Symbol PD RθJA TJ, TSTG Value 1.28 99.3 -55 to +150 Unit W °C/W °C TA = +25°C TA = +85°C ID Pulsed Drain Current (Note 7) A A Thermal Characteristics Characteristic Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient @TA = +25°C (Note 6) Operating and Storage Temperature Range Electrical Characteristics @TA = +25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 20 - - 1.0 ±10 V μA μA VGS = 0V, ID = 250μA VDS = 20V, VGS = 0V VGS = ±12V, VDS = 0V VGS(th) 0.5 RDS (ON) - |Yfs| VSD - 1.5 16 23 1.2 V Static Drain-Source On-Resistance 1.0 11 17 17 0.7 VDS = VGS, ID = 250μA VGS = 4.5V, ID = 9.4A VGS = 2.5V, ID = 8.3A VDS = 5V, ID = 9.4A VGS = 0V, IS = 1.3A Ciss Coss Crss Rg Qg Qg Qgs Qgd - 1149 157 142 1.51 11.6 26 2.7 3.4 11.67 12.49 35.89 12.33 - Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: tD(on) tr tD(off) tf mΩ S V pF pF pF Ω nC nC nC nC ns ns ns ns Test Condition VDS = 10V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VGS = 4.5V, VDS = 10V, ID = 9.4A VDD = 10V, VGS = 4.5V, RGEN = 6Ω, ID = 1A 6. Device mounted on FR-4 PCB, with minimum recommended pad layout. 7. Repetitive rating, pulse width limited by junction temperature. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to production testing. DMG6898LSD Document number: DS31947 Rev. 6 - 2 2 of 6 www.diodes.com November 2014 © Diodes Incorporated DMG6898LSD 20 20 VGS = 8.0V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS = 3.0V VGS = 2.5V VGS = 2.0V 10 5 15 VDS = 10V 10 5 TA = 150°C VGS = 1.8V T A = 125°C TA = 85°C T A = 25°C TA = -55°C VGS = 1.5V 0 0 0.5 1 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristic 0.06 0.05 0.04 VGS = 1.8V 0.03 0.02 VGS = 2.5V VGS = 4.5V 0.01 0 0 2 1.2 VGS = 4.5V ID = 500mA 0.8 VGS = 2.5V ID = 150mA 0.6 0.4 -50 0.03 TA = 125°C T A = 85°C TA = 25°C 0.01 TA = -55°C 0 2 4 6 8 10 12 14 16 18 20 ID, DRAIN CURRENT (A) Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 0.04 0.03 VGS = 4.5V ID = 500mA 0.02 VGS = 2.5V ID = 150mA 0.01 Fig. 5 On-Resistance Variation with Temperature Document number: DS31947 Rev. 6 - 2 TA = 150°C 0.02 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) DMG6898LSD 3 VGS = 4.5V 0 RDSON, DRAIN-SOURCE ON-RESISTANCE () 1.4 0.5 1 1.5 2 2.5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristic 0.04 4 6 8 10 12 14 16 18 20 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 1.6 1.0 0 2 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0 RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) NEW PRODUCT VGS = 4.5V 15 3 of 6 www.diodes.com 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 6 On-Resistance Variation with Temperature November 2014 © Diodes Incorporated DMG6898LSD 20 1.4 IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) 1.6 1.2 ID = 1mA 1.0 ID = 250µA 0.8 0.6 0.4 15 T A = 25°C 10 5 0.2 0 0.4 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature 1,800 0.6 0.8 1 V SD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.2 10,000 IDSS, LEAKAGE CURRENT (nA) 1,600 C, CAPACITANCE (pF) 1,400 1,200 Ciss 1,000 800 600 400 TA = 150°C 1,000 TA = 125°C 100 TA = 85°C 10 TA = 25°C Coss 200 TA = -55°C Crss 1 0 0 5 10 15 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Total Capacitance 20 0 2 4 6 8 10 12 14 16 18 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Typical Leakage Current vs. Drain-Source Voltage 20 10 VGS, GATE-SOURCE VOLTAGE (V) NEW PRODUCT 1.8 VDS = 10V ID = 9.4A 8 6 4 2 0 0 4 8 12 16 20 24 28 Qg, TOTAL GATE CHARGE (nC) Fig. 11 Gate-Source Voltage vs. Total Gate Charge DMG6898LSD Document number: DS31947 Rev. 6 - 2 4 of 6 www.diodes.com November 2014 © Diodes Incorporated DMG6898LSD r(t), TRANSIENT THERMAL RESISTANCE D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 RJA(t) = r(t) * RJA RJA = 205°C/W D = 0.02 0.01 P(pk) D = 0.01 t1 t2 TJ - TA = P * R JA(t) Duty Cycle, D = t1/t2 D = 0.005 D = Single Pulse 0.001 0.0001 0.001 0.01 0.1 1 10 t1, PULSE DURATION TIME (s) Fig. 12 Transient Thermal Response 100 1,000 Package Outline Dimensions Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. 0.254 NEW PRODUCT 1 E1 E A1 L Gauge Plane Seating Plane Detail ‘A’ 7°~9° h 45° Detail ‘A’ A2 A A3 b e SO-8 Dim Min Max A 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25 b 0.3 0.5 D 4.85 4.95 E 5.90 6.10 E1 3.85 3.95 e 1.27 Typ h 0.35 L 0.62 0.82 0 8 All Dimensions in mm D Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. X C1 C2 Dimensions X Y C1 C2 Value (in mm) 0.60 1.55 5.4 1.27 Y DMG6898LSD Document number: DS31947 Rev. 6 - 2 5 of 6 www.diodes.com November 2014 © Diodes Incorporated DMG6898LSD IMPORTANT NOTICE NEW PRODUCT DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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Copyright © 2014, Diodes Incorporated www.diodes.com DMG6898LSD Document number: DS31947 Rev. 6 - 2 6 of 6 www.diodes.com November 2014 © Diodes Incorporated