Preliminary Datasheet BCR40RM-12LB Triac Medium Power Use R07DS0516EJ0100 Rev.1.00 Oct 14, 2011 Features Viso:2000V Insulated Type Planar Passivation Type IT (RMS) : 40A VDRM : 600 V Tj: 150 °C IFGTI, IRGTI, IRGT :50 mA Outline RENESAS Package code: PRSS0003ZA-A (Package name: TO-3PFM) 2 3 1. T1 Terminal 2. T2 Terminal 3. Gate Terminal 1 1 2 3 Applications Contactless AC switch, electric heater control, light dimmer, on/off and speed control of small induction motor, on/off control of copier lamp Maximum Ratings Parameter Repetitive peak off-state voltageNote1 Non-repetitive peak off-state voltageNote1 Notes: 1. Gate open. R07DS0516EJ0100 Rev.1.00 Oct 14, 2011 Symbol VDRM VDSM Voltage class 12 600 720 Unit V V Page 1 of 7 BCR40RM-12LB Preliminary Parameter RMS on-state current Symbol IT (RMS) Ratings 40 Unit A Surge on-state current ITSM 400 A I2 t 667 A2s PGM PG (AV) VGM IGM Tj Tstg — Viso 5 0.5 10 2 –40 +150 –40 +150 5.2 2000 W W V A C C g V I2t for fusion Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction Temperature Storage temperature Mass Isolation voltage Conditions Commercial frequency, sine full wave 360°conduction, Tc = 61C Note3 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Ta=25 , AC 1 minute T1 T2 G terminal to case Electrical Characteristics Parameter Repetitive peak off-state current On-state voltage Symb ol IDRM Min. Typ. Max. — — VTM — — Unit Test conditions 10.0 mA Tj = 150C, VDRM applied 1.55 V Tc = 25C, ITM = 60A, instantaneous measurement Gate trigger voltageNote2 VFGT VRGT VRGT — — — — — — 2.5 2.5 2.5 V V V Tj = 25C, VD = 6 V, RL = 6 , RG = 330 Gate trigger curentNote2 IFGT IRGT IRGT — — — — — — 50 50 50 mA mA mA Tj = 25C, VD = 6 V, RL = 6 , RG = 330 VGD 0.2 0.1 — 20 2 — — V — — — 1.8 — — C/W V/s V/s Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state commutation voltageNote4 Rth (j-c) (dv/dt)c Tj = 125C, VD = 1/2 VDRM Tj = 150C, VD = 1/2 VDRM Note3 Junction to case Tj = 125C Tj = 150C Notes: 2. Measurement using the gate trigger characteristics measurement circuit. 3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5C/W. 4. Test conditions of the critical-rate of rise of off-state commutating voltage shown in the table below. Test conditions 1. Junction temperature Tj = 125/150C 2.Rate of decay of on-state commutating current (di/dt)c =-20 A/ms 3.Peak off-state voltage VD = 400 V R07DS0516EJ0100 Rev.1.00 Oct 14, 2011 Commutating voltage and current waveforms (inductive load) Supply Voltage Time Main Current (di/dt)c Time Main Voltage (dv/dt)c Time VD Page 2 of 7 BCR40RM-12LB Preliminary Performance Curves Maximum On-State Characteristics Rated Surge On-State Current 103 500 Surge On-State Current (A) 102 101 100 0 1 2 3 100 101 102 Gate Characteristics (I, II and III) Gate Trigger Current vs. Junction Temperature PG(AV) = 0.5W PGM = 5W VGT = 2.5V IGM = 2A 100 10−1 VGD = 0.1V IFGT I, IRGT I, IRGT III 1 10 2 10 3 104 103 Typical Example IRGT I, IRGT III 102 IFGT I 101 –40 0 40 80 120 160 Gate Current (mA) Junction Temperature (°C) Gate Trigger Voltage vs. Junction Temperature Maximum Transient Thermal Impedance Characteristics (Junction to case) 103 Typical Example 102 101 –40 Gate Trigger Current (Tj = t°C) × 100 (%) Gate Trigger Current (Tj = 25°C) Gate Voltage (V) 200 Conduction Time (Cycles at 60Hz) 101 Gate Trigger Voltage (Tj = t°C) × 100 (%) Gate Trigger Voltage (Tj = 25°C) 300 On-State Voltage (V) VGM = 10V 10 400 0 100 4 0 40 80 120 Junction Temperature (°C) R07DS0516EJ0100 Rev.1.00 Oct 14, 2011 160 Transient Thermal Impedance (°C/W) On-State Current (A) Tj = 25°C 102 2.0 103 104 100 101 1.6 1.2 0.8 0.4 0 −1 10 102 Conduction Time (Cycles at 60Hz) Page 3 of 7 BCR40RM-12LB Preliminary Allowable Case Temperature vs. RMS On-State Current Maximum On-State Power Dissipation 160 360° Conduction 40 Resistive, inductive loads 30 20 10 120 100 80 60 40 360° Conduction inductive loads 10 20 30 40 0 0 50 10 20 30 40 50 RMS On-State Current (A) RMS On-State Current (A) Allowable Ambient Temperature vs. RMS On-State Current Allowable Ambient Temperature vs. RMS On-State Current All fins are black painted aluminum and greased 140 Curves apply regardless of conduction angle Resistive, inductive loads Natural convection 120 100 80 60 160 160 t2.3 40 120 120 t2.3 20 0 0 100 100 t2.3 10 20 30 40 Natural convection No Fins Curves apply regardless of conduction angle Resistive, inductive loads 140 120 100 80 60 40 20 0 0 50 1 2 3 4 RMS On-State Current (A) RMS On-State Current (A) Breakover Voltage vs. Junction Temperature Repetitive Peak Off-State Current vs. Junction Temperature 160 Typical Example 140 120 100 80 60 40 20 0 −40 160 Ambient Temperature (°C) 160 Ambient Temperature (°C) Curves apply regardless of conduction angle 140 20 Resistive, 0 0 Breakover Voltage (Tj = t°C) × 100 (%) Breakover Voltage (Tj = 25°C) Case Temperature (°C) 50 0 40 80 120 Junction Temperature (°C) R07DS0516EJ0100 Rev.1.00 Oct 14, 2011 160 Repetitive Peak Off-State Current (Tj = t°C) × 100 (%) Repetitive Peak Off-State Current (Tj = 25°C) On-State Power Dissipation (W) 60 105 Typical Example 104 103 102 –40 0 40 80 120 160 Junction Temperature (°C) Page 4 of 7 Preliminary 103 Typical Example 102 101 −40 0 40 80 120 160 Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj=125°C) 160 120 100 III Quadrant 80 60 40 I Quadrant 20 0 101 102 103 104 Rate of Rise of Off-State Voltage (V/μs) Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj=150°C) Commutation Characteristics (Tj=125°C) 102 160 Typical Example Tj = 150°C 140 120 100 III Quadrant 80 60 40 I Quadrant 20 0 101 102 103 104 Minimum Characteristics Value 100 101 Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT τ Time 101 III Quadrant I Quadrant Minimum Characteristics Value 100 101 102 Rate of Decay of On-State Commutating Current (A/ms) R07DS0516EJ0100 Rev.1.00 Oct 14, 2011 103 102 103 Rate of Decay of On-State Commutating Current (A/ms) Gate Trigger Current vs. Gate Current Pulse Width Gate Trigger Current (tw) × 100 (%) Gate Trigger Current (DC) Typical Example Tj = 150°C IT = 4A τ = 500μs VD = 200V f = 3Hz Typical Example Tj = 125°C IT = 4A τ = 500μs VD = 200V f = 3Hz I Quadrant Commutation Characteristics (Tj=150°C) 102 Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT τ Time III Quadrant 101 Rate of Rise of Off-State Voltage (V/μs) Critical Rate of Rise of Off-State Commutating Voltage (V/μs) Typical Example Tj = 125°C 140 Junction Temperature (°C) Critical Rate of Rise of Off-State Commutating Voltage (V/μs) Breakover Voltage (dv/dt = xV/μs) × 100 (%) Breakover Voltage (dv/dt = 1V/μs) Holding Current (Tj = t°C) × 100 (%) Holding Current (Tj = 25°C) Holding Current vs. Junction Temperature Breakover Voltage (dv/dt = xV/μs) × 100 (%) Breakover Voltage (dv/dt = 1V/μs) BCR40RM-12LB 103 Typical Example IFGT I IRGT I IRGT III 102 101 100 101 102 Gate Current Pulse Width (μs) Page 5 of 7 BCR40RM-12LB Preliminary Gate Trigger Characteristics Test Circuits Recommended Circuit Values Around The Triac 6Ω 6Ω Load C1 A 6V V V Test Procedure II Test Procedure I R1 A 6V 330Ω 330Ω C0 C1 = 0.1 to 0.47μF R1 = 47 to 100Ω R0 C0 = 0.1μF R0 = 100Ω 6Ω A 6V V 330Ω Test Procedure III R07DS0516EJ0100 Rev.1.00 Oct 14, 2011 Page 6 of 7 BCR40RM-12LB Preliminary Package Dimensions Previous Code TO-3PFM / TO-3PFMV 15.6 ± 0.3 2.0 ± 0.3 2.7 ± 0.3 0.4 φ3.2 +– 0.2 MASS[Typ.] 5.2g Unit: mm 5.5 ± 0.3 3.2 ± 0.3 4.0 ± 0.3 2.6 0.86 1.6 0.86 0.66 21.0 ± 0.5 RENESAS Code PRSS0003ZA-A 5.0 ± 0.3 JEITA Package Code SC-93 5.0 ± 0.3 19.9 ± 0.3 Package Name TO-3PFM + 0.2 – 0.1 0.2 0.9 +– 0.1 5.45 ± 0.5 5.45 ± 0.5 Ordering Information Orderable Part Number BCR40RM-12LB#B00 Note: Packing Tube Quantity 30 pcs. 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