Renesas BCR40RM-12LB Triac medium power use Datasheet

Preliminary Datasheet
BCR40RM-12LB
Triac
Medium Power Use
R07DS0516EJ0100
Rev.1.00
Oct 14, 2011
Features




 Viso:2000V
 Insulated Type
 Planar Passivation Type
IT (RMS) : 40A
VDRM : 600 V
Tj: 150 °C
IFGTI, IRGTI, IRGT :50 mA
Outline
RENESAS Package code: PRSS0003ZA-A
(Package name: TO-3PFM)
2
3
1. T1 Terminal
2. T2 Terminal
3. Gate Terminal
1
1
2
3
Applications
Contactless AC switch, electric heater control, light dimmer, on/off and speed control of small induction motor, on/off
control of copier lamp
Maximum Ratings
Parameter
Repetitive peak off-state voltageNote1
Non-repetitive peak off-state voltageNote1
Notes: 1. Gate open.
R07DS0516EJ0100 Rev.1.00
Oct 14, 2011
Symbol
VDRM
VDSM
Voltage class
12
600
720
Unit
V
V
Page 1 of 7
BCR40RM-12LB
Preliminary
Parameter
RMS on-state current
Symbol
IT (RMS)
Ratings
40
Unit
A
Surge on-state current
ITSM
400
A
I2 t
667
A2s
PGM
PG (AV)
VGM
IGM
Tj
Tstg
—
Viso
5
0.5
10
2
–40 +150
–40 +150
5.2
2000
W
W
V
A
C
C
g
V
I2t for fusion
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction Temperature
Storage temperature
Mass
Isolation voltage
Conditions
Commercial frequency, sine full wave
360°conduction, Tc = 61C Note3
60Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Typical value
Ta=25 , AC 1 minute
T1 T2 G terminal to case
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Symb
ol
IDRM
Min.
Typ.
Max.
—
—
VTM
—
—
Unit
Test conditions
10.0
mA
Tj = 150C, VDRM applied
1.55
V
Tc = 25C, ITM = 60A,
instantaneous measurement
Gate trigger voltageNote2



VFGT
VRGT
VRGT
—
—
—
—
—
—
2.5
2.5
2.5
V
V
V
Tj = 25C, VD = 6 V, RL = 6 ,
RG = 330 
Gate trigger curentNote2



IFGT
IRGT
IRGT
—
—
—
—
—
—
50
50
50
mA
mA
mA
Tj = 25C, VD = 6 V, RL = 6 ,
RG = 330 
VGD
0.2
0.1
—
20
2
—
—
V
—
—
—
1.8
—
—
C/W
V/s
V/s
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutation voltageNote4
Rth (j-c)
(dv/dt)c
Tj = 125C, VD = 1/2 VDRM
Tj = 150C, VD = 1/2 VDRM
Note3
Junction to case
Tj = 125C
Tj = 150C
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5C/W.
4. Test conditions of the critical-rate of rise of off-state commutating voltage shown in the table below.
Test conditions
1. Junction temperature
Tj = 125/150C
2.Rate of decay of on-state commutating current
(di/dt)c =-20 A/ms
3.Peak off-state voltage
VD = 400 V
R07DS0516EJ0100 Rev.1.00
Oct 14, 2011
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
Main Current
(di/dt)c
Time
Main Voltage
(dv/dt)c
Time
VD
Page 2 of 7
BCR40RM-12LB
Preliminary
Performance Curves
Maximum On-State Characteristics
Rated Surge On-State Current
103
500
Surge On-State Current (A)
102
101
100
0
1
2
3
100
101
102
Gate Characteristics (I, II and III)
Gate Trigger Current vs.
Junction Temperature
PG(AV) = 0.5W
PGM = 5W
VGT = 2.5V
IGM = 2A
100
10−1
VGD = 0.1V
IFGT I, IRGT I, IRGT III
1
10
2
10
3
104
103
Typical Example
IRGT I, IRGT III
102
IFGT I
101
–40
0
40
80
120
160
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage vs.
Junction Temperature
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
103
Typical Example
102
101
–40
Gate Trigger Current (Tj = t°C)
× 100 (%)
Gate Trigger Current (Tj = 25°C)
Gate Voltage (V)
200
Conduction Time (Cycles at 60Hz)
101
Gate Trigger Voltage (Tj = t°C)
× 100 (%)
Gate Trigger Voltage (Tj = 25°C)
300
On-State Voltage (V)
VGM = 10V
10
400
0
100
4
0
40
80
120
Junction Temperature (°C)
R07DS0516EJ0100 Rev.1.00
Oct 14, 2011
160
Transient Thermal Impedance (°C/W)
On-State Current (A)
Tj = 25°C
102
2.0
103
104
100
101
1.6
1.2
0.8
0.4
0 −1
10
102
Conduction Time (Cycles at 60Hz)
Page 3 of 7
BCR40RM-12LB
Preliminary
Allowable Case Temperature vs.
RMS On-State Current
Maximum On-State Power Dissipation
160
360° Conduction
40 Resistive,
inductive loads
30
20
10
120
100
80
60
40
360° Conduction
inductive loads
10
20
30
40
0
0
50
10
20
30
40
50
RMS On-State Current (A)
RMS On-State Current (A)
Allowable Ambient Temperature vs.
RMS On-State Current
Allowable Ambient Temperature vs.
RMS On-State Current
All fins are black painted
aluminum and greased
140
Curves apply
regardless of
conduction angle
Resistive,
inductive loads
Natural convection
120
100
80
60
160 160 t2.3
40
120 120 t2.3
20
0
0
100 100 t2.3
10
20
30
40
Natural convection
No Fins
Curves apply regardless
of conduction angle
Resistive, inductive loads
140
120
100
80
60
40
20
0
0
50
1
2
3
4
RMS On-State Current (A)
RMS On-State Current (A)
Breakover Voltage vs.
Junction Temperature
Repetitive Peak Off-State Current vs.
Junction Temperature
160
Typical Example
140
120
100
80
60
40
20
0
−40
160
Ambient Temperature (°C)
160
Ambient Temperature (°C)
Curves apply regardless
of conduction angle
140
20 Resistive,
0
0
Breakover Voltage (Tj = t°C)
× 100 (%)
Breakover Voltage (Tj = 25°C)
Case Temperature (°C)
50
0
40
80
120
Junction Temperature (°C)
R07DS0516EJ0100 Rev.1.00
Oct 14, 2011
160
Repetitive Peak Off-State Current (Tj = t°C)
× 100 (%)
Repetitive Peak Off-State Current (Tj = 25°C)
On-State Power Dissipation (W)
60
105
Typical Example
104
103
102
–40
0
40
80
120
160
Junction Temperature (°C)
Page 4 of 7
Preliminary
103
Typical Example
102
101
−40
0
40
80
120
160
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=125°C)
160
120
100
III Quadrant
80
60
40
I Quadrant
20
0
101
102
103
104
Rate of Rise of Off-State Voltage (V/μs)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=150°C)
Commutation Characteristics (Tj=125°C)
102
160
Typical Example
Tj = 150°C
140
120
100
III Quadrant
80
60
40
I Quadrant
20
0
101
102
103
104
Minimum
Characteristics
Value
100
101
Time
Main Voltage
(dv/dt)c
VD
Main Current
(di/dt)c
IT
τ
Time
101
III Quadrant
I Quadrant
Minimum
Characteristics
Value
100
101
102
Rate of Decay of On-State
Commutating Current (A/ms)
R07DS0516EJ0100 Rev.1.00
Oct 14, 2011
103
102
103
Rate of Decay of On-State
Commutating Current (A/ms)
Gate Trigger Current vs.
Gate Current Pulse Width
Gate Trigger Current (tw)
× 100 (%)
Gate Trigger Current (DC)
Typical Example
Tj = 150°C
IT = 4A
τ = 500μs
VD = 200V
f = 3Hz
Typical Example
Tj = 125°C
IT = 4A
τ = 500μs
VD = 200V
f = 3Hz
I Quadrant
Commutation Characteristics (Tj=150°C)
102
Time
Main Voltage
(dv/dt)c
VD
Main Current
(di/dt)c
IT
τ
Time
III Quadrant
101
Rate of Rise of Off-State Voltage (V/μs)
Critical Rate of Rise of Off-State
Commutating Voltage (V/μs)
Typical Example
Tj = 125°C
140
Junction Temperature (°C)
Critical Rate of Rise of Off-State
Commutating Voltage (V/μs)
Breakover Voltage (dv/dt = xV/μs)
× 100 (%)
Breakover Voltage (dv/dt = 1V/μs)
Holding Current (Tj = t°C)
× 100 (%)
Holding Current (Tj = 25°C)
Holding Current vs.
Junction Temperature
Breakover Voltage (dv/dt = xV/μs)
× 100 (%)
Breakover Voltage (dv/dt = 1V/μs)
BCR40RM-12LB
103
Typical Example
IFGT I
IRGT I
IRGT III
102
101
100
101
102
Gate Current Pulse Width (μs)
Page 5 of 7
BCR40RM-12LB
Preliminary
Gate Trigger Characteristics Test Circuits
Recommended Circuit Values Around The Triac
6Ω
6Ω
Load
C1
A
6V
V
V
Test Procedure II
Test Procedure I
R1
A
6V
330Ω
330Ω
C0
C1 = 0.1 to 0.47μF
R1 = 47 to 100Ω
R0
C0 = 0.1μF
R0 = 100Ω
6Ω
A
6V
V
330Ω
Test Procedure III
R07DS0516EJ0100 Rev.1.00
Oct 14, 2011
Page 6 of 7
BCR40RM-12LB
Preliminary
Package Dimensions
Previous Code
TO-3PFM / TO-3PFMV
15.6 ± 0.3
2.0 ± 0.3
2.7 ± 0.3
0.4
φ3.2 +– 0.2
MASS[Typ.]
5.2g
Unit: mm
5.5 ± 0.3
3.2 ± 0.3
4.0 ± 0.3
2.6
0.86
1.6
0.86
0.66
21.0 ± 0.5
RENESAS Code
PRSS0003ZA-A
5.0 ± 0.3
JEITA Package Code
SC-93
5.0 ± 0.3
19.9 ± 0.3
Package Name
TO-3PFM
+ 0.2
– 0.1
0.2
0.9 +– 0.1
5.45 ± 0.5
5.45 ± 0.5
Ordering Information
Orderable Part Number
BCR40RM-12LB#B00
Note:
Packing
Tube
Quantity
30 pcs.
Remark
Straight type
Please confirm the specification about the shipping in detail.
R07DS0516EJ0100 Rev.1.00
Oct 14, 2011
Page 7 of 7
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