HMC784MS8GE v00.0808 GaAs MMIC 10 WATT T/R SWITCH DC - 4 GHz Typical Applications Features The HMC784MS8GE is ideal for: Input P1dB: +40 dBm @ Vdd = +8V • Cellular / 4G Infrastructure High Third Order Intercept: +62 dBm • WiMAX, WiBro & Fixed Wireless Positive Control: +3 to +8 V • Automotive Telematics Low Insertion Loss: 0.4 dB • Mobile Radio MSOP8G Package: 14.8 mm2 • Test Equipment General Description Functional Diagram The HMC784MS8GE is a high power SPDT switch in an 8-lead MSOPG package for use in transmit-receive applications which require very low distortion at high input signal power levels. The device can control signals from DC to 4 GHz. The design provides exceptional intermodulation performance; > +60 dBm third order intercept at +5V bias. RF1 and RF2 are reflective shorts when “OFF”. On-chip circuitry allows single positive supply operation from +3 Vdc to +8 Vdc at very low DC current with control inputs compatible with CMOS and most TTL logic families. SWITCHES - SPDT - SMT 11 Electrical Specifi cations, TA = +25° C, Vctl = 0/Vdd, Vdd = +5V (Unless Otherwise Stated), 50 Ohm System Parameter Frequency Min. DC - 1.0 GHz DC - 2.0 GHz DC - 2.5 GHz DC - 3.0 GHz DC - 4.0 GHz Insertion Loss Isolation DC - 4.0 GHz Return Loss (On State) Input Power for 0.1dB Compression Vdd = +3V Vdd = +5V Vdd = +8V 0.1 - 4.0 GHz Input Power for 1dB Compression Vdd = +3V Vdd = +5V Vdd = +8V 0.1 - 4.0 GHz Input Third Order Intercept (Two-tone input power = +30 dBm each tone) 26 DC - 1.0 GHz DC - 2.0 GHz DC - 3.0 GHz DC - 4.0 GHz 0.02 - 0.1 GHz 0.1 - 2.0 GHz 0.1 - 3.0 GHz 0.1 - 4.0 GHz 32 35 38 Typ. Max. Units 0.4 0.6 0.8 0.9 1.3 0.6 0.8 1.1 1.3 2.0 dB dB dB dB dB 30 dB 35 30 20 10 dB dB dB dB 32 37 38 dBm dBm dBm 35 38 41 dBm dBm dBm 42 62 61 60 dBm dBm dBm dBm 15 40 ns ns Switching Characteristics tRISE, tFALL (10/90% RF) tON, tOFF (50% CTL to 10/90% RF) 11 - 224 DC - 4.0 GHz For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC784MS8GE v00.0808 GaAs MMIC 10 WATT T/R SWITCH DC - 4 GHz Isolation 0 0 -1 -10 ISOLATION (dB) +25 C +85 C -40 C -2 -3 -4 -30 -50 0 1 2 3 4 FREQUENCY (GHz) 5 6 Insertion Loss vs. Vdd 0 0 -1 -10 -2 +3V +5V +8V -3 1 2 3 4 FREQUENCY (GHz) 5 6 11 Isolation vs. Vdd 0 ISOLATION (dB) INSERTION LOSS (dB) -20 -40 -5 -4 +3V +5V +8V -20 -30 -40 -5 -50 0 1 2 3 4 FREQUENCY (GHz) 5 6 Return Loss 0 1 2 3 4 FREQUENCY (GHz) 5 6 5 6 RF1 to RF2 Isolation 0 0 -10 RF1 ON RF2 OFF RF1 OFF RF2 ON -10 ISOLATION (dB) RETURN LOSS (dB) RF1 RF2 -20 -30 INPUT RETURN LOSS OUTPUT RETURN LOSS -40 SWITCHES - SPDT - SMT INSERTION LOSS (dB) Insertion Loss vs. Temperature -20 -30 -40 -50 -50 -60 0 1 2 3 4 FREQUENCY (GHz) 5 6 0 1 2 3 4 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 11 - 225 HMC784MS8GE v00.0808 GaAs MMIC 10 WATT T/R SWITCH DC - 4 GHz Input P1dB vs. Vdd Input P0.1dB vs. Vdd 50 50 +3V +5V +8V 40 35 30 1 2 FREQUENCY (GHz) 3 4 Input P1dB vs. Temperature @ Vdd = +5V 0 2 FREQUENCY (GHz) 3 4 70 +25 C +85 C -40 C 60 IP3 (dBm) 45 P1dB (dBm) 1 Input IP3 vs. Tone Power @ Vdd = +3V 50 40 35 50 40 +30 dBm +27 dBm +20 dBm 30 30 20 25 0 1 2 FREQUENCY (GHz) 3 0 4 70 60 60 IP3 (dBm) 70 50 +30 dBm +27 dBm +20 dBm 40 1 2 FREQUENCY (GHz) 3 4 Input IP3 vs. Tone Power @ Vdd = +8V Input IP3 vs. Tone Power @ Vdd = +5V IP3 (dBm) SWITCHES - SPDT - SMT 35 25 0 50 +30 dBm +27 dBm +20 dBm 40 30 30 20 20 0 11 - 226 40 30 25 11 +3V +5V +8V 45 P0.1dB (dBm) P1dB (dBm) 45 1 2 FREQUENCY (GHz) 3 4 0 1 2 FREQUENCY (GHz) 3 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 4 HMC784MS8GE v00.0808 GaAs MMIC 10 WATT T/R SWITCH DC - 4 GHz Input IP3 vs. Temperature 27 dBm Tones, Vdd = +5V 70 70 60 60 IP3 (dBm) 50 40 +25 C +85 C -40 C 30 20 0 1 2 FREQUENCY (GHz) 3 0 4 Input IP3 vs. Temperature 27 dBm Tones, Vdd = +8V 50 60 45 50 +25 C +85 C -40 C 40 1 2 FREQUENCY (GHz) 3 4 11 Input P1dB vs. Vdd 70 P1dB (dBm) IP3 (dBm) +25 C +85 C -40 C 40 30 20 30 40 35 +3V +5V +8V 30 20 25 0 1 2 FREQUENCY (GHz) 3 0 4 0.05 0.1 0.15 0.2 0.25 FREQUENCY (GHz) Input P0.1dB vs. Vdd Input IP3 vs. Tone Power @ Vdd = +5V 50 70 +3V +5V +8V 60 IP3 (dBm) 45 P0.1dB (dBm) 50 40 35 30 SWITCHES - SPDT - SMT IP3 (dBm) Input IP3 vs. Temperature 27 dBm Tones, Vdd = +3V 50 +30 dBm +27 dBm +20 dBm 40 30 25 20 0 0.05 0.1 0.15 FREQUENCY (GHz) 0.2 0.25 0 0.05 0.1 0.15 0.2 0.25 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 11 - 227 HMC784MS8GE v00.0808 GaAs MMIC 10 WATT T/R SWITCH DC - 4 GHz Bias Voltage & Current Control Voltages & Currents Vdd (V) Typical Idd (μA) +3 0.5 +5 2 +8 20 Vdd = +3V (μA) State Vdd = +5V (μA) Vdd = +8V (μA) Low (0 to +0.2V) 0.5 2 20 High (Vdd ±0.2V) 0.1 0.1 0.1 Truth Table Control Input (Vctl) A SWITCHES - SPDT - SMT 11 11 - 228 Signal Path State B RFC to RF1 RFC to RF2 High Low Off On Low High On Off Absolute Maximum Ratings RF Input Power (Vdd = +8V, 50 Ohm source & load impedances) +39 dBm (T = +85 °C) Supply Voltage Range (Vdd) (Vctl = 0V) -0.2 to +9V Control Voltage Range (A & B) -0.2 to Vdd +0.5V Channel Temperature 150 °C Continuous Pdiss (T = 85 °C) (derate 25 mW/°C above 85 °C) 1.217 W Thermal Resistance (Channel to ground paddle) 53.4 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C ESD Rating Class 1A HBM ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Note: DC blocking capacitors are required at ports RFC, RF1 and RF2. Their value will determine the lowest transmission frequency. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC784MS8GE v00.0808 GaAs MMIC 10 WATT T/R SWITCH DC - 4 GHz Outline Drawing 11 NOTES: 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 5. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. Package Information Part Number Package Body Material Lead Finish HMC784MS8GE RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL Rating MSL1 [2] Package Marking [1] H784 XXXX [1] 4-Digit lot number XXXX [2] Max peak reflow temperature of 260 °C For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com SWITCHES - SPDT - SMT 1. LEADFRAME MATERIAL: COPPER ALLOY 11 - 229 HMC784MS8GE v00.0808 GaAs MMIC 10 WATT T/R SWITCH DC - 4 GHz Pin Descriptions Function Description 1 A See truth table and control voltage table. 2 B See truth table and control voltage table. 3, 5, 8 RFC, RF1, RF2 This pin is DC coupled and matched to 50 Ohms. Blocking capacitors are required. 4 Vdd Supply Voltage 6, 7 GND Package bottom must also be connected to PCB RF ground. Interface Schematic Typical Application Circuit SWITCHES - SPDT - SMT 11 Pin Number Notes: 1. Set logic gate and switch Vdd = +3V to +8V and use HCT series logic to provide a TTL driver interface. 2. Control inputs A/B can be driven directly with CMOS logic (HC) with Vdd of +3 to +8 Volts applied to the CMOS logic gates and to pin 4 of the RF switch. 3. DC Blocking capacitors are required for each RF port as shown. Capacitor value determines lowest frequency of operation. 4. Highest RF signal power capability is achieved with V set to +8V. The switch will operate properly (but at lower RF power capability) at bias voltages down to +3V. 11 - 230 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC784MS8GE v00.0808 GaAs MMIC 10 WATT T/R SWITCH DC - 4 GHz Evaluation Circuit Board List of Materials for Evaluation PCB 104124 [1] Item Description J1 - J3 PCB Mount SMA RF Connector J4 - J7 DC Pin C1 - C3 100 pF capacitor, 0402 Pkg. C4 10 KpF capacitor, 0603 Pkg. R1 - R3 100 Ohm Resistor, 0402 Pkg. U1 HMC784MS8GE T/R Switch PCB [2] 104122 Evaluation PCB [1] Reference this number when ordering complete evaluation PCB The circuit board used in the final application should be generated with proper RF circuit design techniques. Signal lines at the RF port should have 50 ohm impedance and the package ground leads and package bottom should be connected directly to the ground plane similar to that shown above. The evaluation circuit board shown above is available from Hittite Microwave Corporation upon request. SWITCHES - SPDT - SMT 11 [2] Circuit Board Material: Rogers 4350 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 11 - 231