Infineon AUIRF7303Q Automotive grade Datasheet

AUTOMOTIVE GRADE
Features
 Advanced Planar Technology
 Dual N Channel MOSFET
 Low On-Resistance
 Logic Level Gate Drive
 Dynamic dv/dt Rating
 175°C Operating Temperature
 Fast Switching
 Repetitive Avalanche Allowed up to Tjmax
 Lead-Free, RoHS Compliant
 Automotive Qualified *
AUIRF7303Q
S1
1
8
D1
G1
2
7
D1
S2
3
6
D2
G2
4
5
D2
Package Type
AUIRF7303Q
SO-8
30V
RDS(on) max.
ID
Top View
Description
Specifically designed for Automotive applications, this cellular
design of HEXFET® Power MOSFETs utilizes the latest
processing techniques to achieve low on-resistance per silicon
area. This benefit combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs are
well known for, provides the designer with an extremely efficient
and reliable device for use in Automotive and a wide variety of
other applications.
Base part number
VDSS
0.05
5.3A
SO-8
AUIRF7303Q
G
Gate
Standard Pack
Form
Quantity
Tape and Reel
4000
D
Drain
S
Source
Orderable Part Number
AUIRF7303QTR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
Parameter
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
5.3
ID @ TA = 70°C
IDM
PD @TA = 25°C
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Maximum Power Dissipation
4.4
44
2.4
VGS
EAS
EAS (Tested)
dv/dt
TJ
TSTG
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited) 
Single Pulse Avalanche Energy (Thermally Limited) 
Peak Diode Recovery dv/dt 
Operating Junction and
Storage Temperature Range
Thermal Resistance
Symbol
RJA
Parameter
Junction-to-Ambient 
Max.
Units
A
W
0.02
± 20
414
1160
1.6
-55 to + 175
W/°C
V
mJ
V/ns
°C
Typ.
Max.
Units
–––
62.5
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
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AUIRF7303Q
Static @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Trans conductance
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min.
30
–––
–––
–––
1.0
5.6
–––
–––
–––
–––
Typ. Max. Units
Conditions
––– –––
V VGS = 0V, ID = 250µA
0.03 ––– V/°C Reference to 25°C, ID = 1mA
––– 0.05
VGS = 10V, ID = 2.7A 
m
––– 0.08
VGS = 4.5V, ID = 2.1A 
–––
3.0
V VDS = VGS, ID = 100µA
––– –––
S VDS = 15V, ID = 2.7A
–––
1.0
VDS = 24V, VGS = 0V
µA
–––
25
VDS = 24V,VGS = 0V,TJ = 125°C
––– 100
VGS = 20V
nA
––– -100
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Total Gate Charge
Qg
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain Charge
td(on)
Turn-On Delay Time
Rise Time
tr
td(off)
Turn-Off Delay Time
tf
Fall Time
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Diode Characteristics
Parameter
Continuous Source Current
IS
(Body Diode)
Pulsed Source Current
ISM
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
14
1.5
4.4
2.9
6.2
15
7.8
515
217
90
21
2.3
6.6
–––
–––
–––
–––
–––
–––
–––
Min.
Typ. Max. Units
–––
–––
3.0
–––
–––
44
–––
–––
–––
–––
26
50
1.0
39
75
ID = 2.7A
nC VDS = 15V
VGS = 10V 
VDD = 15V
ID = 2.7A
ns
RG = 6.8
VGS = 10V 
VGS = 0V
pF VDS = 25V
ƒ = 1.0MHz
Conditions
MOSFET symbol
showing the
A
integral reverse
p-n junction diode.
V TJ = 25°C,IS = 2.7A,VGS = 0V 
ns TJ = 25°C ,IF = 2.7A,
nC di/dt = 100A/µs 
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
 Limited by TJmax, Starting TJ = 25°C, L = 118mH, RG = 50, IAS = 2.7A VGS =10V. Part not recommended for use above this value.
ISD 2.7A, di/dt 389A/µs, VDD V(BR)DSS, TJ  175°C.
 Pulse width 400µs; duty cycle  2%.
 This value determined from sample failure population, TJ = 25°C, L = 118mH, RG = 50, IAS = 2.7A, VGS =10V.
 Surface mounted on FR-4 board, t 10sec.
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AUIRF7303Q
100
100
10
BOTTOM
1
2.5V
0.1
0.1
1
10
10
BOTTOM
2.5V
1
60µs PULSE WIDTH
Tj = 175°C
60µs PULSE WIDTH Tj = 25°C
0.01
0.1
0.1
100
100
2.0
V DS = 15V
60µs PULSE WIDTH
10
T J = 175°C
T J = 25°C
1
ID = 5.3A
V GS = 10V
1.5
(Normalized)
RDS(on) , Drain-to-Source On Resistance
100
ID, Drain-to-Source Current (A)
10
Fig. 2 Typical Output Characteristics
Fig. 1 Typical Output Characteristics
1.0
0.5
0.1
1
2
3
4
5
6
-60
7
60
100
140
180
14.0
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
VGS, Gate-to-Source Voltage (V)
ID = 2.7A
C oss = C ds + C gd
1000
C iss
C oss
C rss
100
20
Fig. 4 Normalized On-Resistance vs. Temperature
Fig. 3 Typical Transfer Characteristics
10000
-20
T J , Junction Temperature (°C)
V GS , Gate-to-Source Voltage (V)
C, Capacitance (pF)
1
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
12.0
VDS = 24V
VDS = 15V
VDS= 6.0V
10.0
8.0
6.0
4.0
2.0
0.0
10
1
10
100
1000
VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
3
VGS
15V
10V
7.0V
4.5V
3.5V
3.0V
2.8V
2.5V
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS
15V
10V
7.0V
4.5V
3.5V
3.0V
2.8V
2.5V
0
5
10
15
20
Q G, Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
2015-9-30
AUIRF7303Q
100
1000
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
OPERATION IN THIS AREA
LIMITED BY RDS(on)
T J = 175°C
10
T J = 25°C
1
100
100µs
1ms
10
10ms
1
DC
0.1
Tc = 25°C
Tj = 175°C
Single Pulse
VGS = 0V
0.1
0.01
0.3
0.5
0.7
0.9
1.1
1.3
1.5
1.7
0.10
1
VSD , Source-to-Drain Voltage (V)
10
Fig. 7 Typical Source-to-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
1800
EAS , Single Pulse Avalanche Energy (mJ)
6
ID
0.9A
1.4A
BOTTOM 2.7A
1600
5
ID, Drain Current (A)
100
VDS, Drain-to-Source Voltage (V)
TOP
1400
1200
4
1000
3
2
1
800
600
400
200
0
0
25
50
75
100
125
150
25
175
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
T A , Ambient Temperature (°C)
Fig 9. Maximum Drain Current vs. Case Temperature
Fig 10. Maximum Avalanche Energy vs. Drain Current
100
Thermal Response ( Z thJA ) °C/W
D = 0.50
0.20
0.10
0.05
0.02
0.01
10
1
0.1
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T A
SINGLE PULSE
( THERMAL RESPONSE )
0.001
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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AUIRF7303Q
®
Fig 12. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET Power MOSFETs
V(BR)DSS
15V
DRIVER
L
VDS
tp
D.U.T
RG
+
V
- DD
IAS
20V
tp
A
I AS
0.01
Fig 13a. Unclamped Inductive Test Circuit
Fig 13b. Unclamped Inductive Waveforms
Fig 14b. Switching Time Waveforms
Fig 14a. Switching Time Test Circuit
Id
Vds
Vgs
L
DUT
0
1K
VCC
Vgs(th)
Qgs1 Qgs2
Fig 15a. Gate Charge Test Circuit
5
Qgd
Qgodr
Fig 15b. Gate Charge Waveform
2015-9-30
AUIRF7303Q
SO-8 Package Outline (Dimensions are shown in millimeters (inches)
D
D IM
B
8
6
7
6
M IN
A
.0532
.0688
1.35
1.75
A1
.0040
.0098
0.10
0.25
b
.013
.020
0.33
0.51
c
.0075
.0098
0.19
0.25
D
.189
.1968
4.80
5.00
E
.1497
.1574
3.80
4.00
e
.050 B ASIC
1.27 B ASIC
e1
5
H
E
1
6X
2
3
0.25 [ .010]
4
A
e
e1
0.25 [ .010]
A1
C
A
M AX
.025 B ASIC
0.635 BASIC
H
.2284
.2440
5.80
6.20
K
.0099
.0196
0.25
0.50
L
.016
.050
0.40
1.27
y
0°
8°
0°
8°
K x 45°
A
C
8X b
M ILLIM ETERS
M AX
5
A
IN C H ES
M IN
y
0.10 [ .004]
B
8X L
F O O T P R IN T
N O TE S :
1.
D IM E N S IO N IN G & T O L E R A N C IN G P E R A S M E Y 1 4 . 5 M - 1 9 9 4 .
2.
C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R
3.
D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S [ IN C H E S ] .
4.
O U T L IN E C O N F O R M S T O J E D E C O U T L IN E M S - 0 1 2 A A .
5
D IM E N S IO N D O E S N O T IN C L U D E M O L D P R O T R U S IO N S .
M O L D P R O T R U S IO N S N O T T O E X C E E D 0 .1 5 [ . 0 0 6 ] .
6
D IM E N S IO N D O E S N O T IN C L U D E M O L D P R O T R U S IO N S .
M O L D P R O T R U S IO N S N O T T O E X C E E D 0 .2 5 [ . 0 1 0 ] .
7
D IM E N S IO N IS T H E L E N G T H O F L E A D F O R S O L D E R IN G T O
A S U B S TR A TE .
8X c
7
8 X 0 .7 2 [ .0 2 8 ]
6 .4 6 [ .2 5 5 ]
3 X 1 .2 7 [ .0 5 0 ]
8 X 1 .7 8 [ .0 7 0 ]
SO-8 Part Marking Information
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AUIRF7303Q
SO-8 Tape and Reel (Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
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AUIRF7303Q
Qualification Information
Qualification Level
Moisture Sensitivity Level
Machine Model
Human Body Model
ESD
Charged Device Model
RoHS Compliant
Automotive
(per AEC-Q101)
Comments: This part number(s) passed Automotive qualification. Infineon’s
Industrial and Consumer qualification level is granted by extension of the higher
Automotive level.
SO-8
MSL1
Class M2 (+/- 150V)†
AEC-Q101-002
Class H1A (+/- 500V)†
AEC-Q101-001
Class C5 (+/- 1500V)†
AEC-Q101-005
Yes
† Highest passing voltage.
Revision History
Date
3/4/2014
9/30/2015
Comments




Added "Logic Level Gate Drive" bullet in the features section on page 1
Updated data sheet with new IR corporate template
Updated datasheet with corporate template
Corrected ordering table on page 1.
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2015
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (www.infineon.com).
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
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