SUNMATE BZT52C3V6 Surface mount silicon zener diode Datasheet

BZT52C2V4 - BZT52C39
SURFACE MOUNT SILICON ZENER DIODES
VOLTAGE RANGE: 2.4 - 39 V
POWER: 0.5Wa t t s
Features
! Planar Die Construction
! 500mW Power Dissipation on Ceramic PCB
General Purpose, Medium Current
! Ideally Suited for Automated Assembly
B
Processes
C
Mechanical Data
! Case: SOD-123FL
plastic body over passivated junction
! Terminals : Plated axial leads,
! solderable per MIL-STD-750, Method 2026
E
D
H
L
! Polarity : Color band denotes cathode end
! Mounting Position : Any
! Weight:0.0007 ounce, 0.02 grams
SOD-123FL
Dim Min Max Typ
A 3.58 3.72 3.65
3
B 2.72 2.78 2.75
C 1.77 1.83 1.80
D
1
1.02
1.08 1.05
E 0.097 1.03 1.00
H 0.13 0.17 0.15
L
0.53 0.57 0.55
All Dimensions in mm
E
A
Maximum Ratings TA = 25C unless otherwise specified
Characteristic
Forward Voltage (Note 2)
@ IF = 10mA
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
Notes:
Symbol
Value
Unit
VF
0.9
V
Pd
500
mW
RqJA
305
°C/W
Tj, TSTG
-65 to +150
°C
1. Device mounted on ceramic PCB; 7.6mm x 9.4mm x 0.87mm with pad areas 25mm2.
2. Short duration test pulse used to minimize self-heating effect.
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Electrical Characteristics
Zener Voltage Range
(Note 2)
Type
Number
Notes:
@ TA = 25°C unless otherwise specified
Vz @IZT
Maximum
Reverse
Current
(Note 2)
Maximum Zener
Impedance (Note 3)
IZT
ZZT
@ IZT
ZZK @ IZK
W
IZK
IR
@ VR
Typical
Temperature
Coefficient
@ IZTC
mV/°C
Test
Current
IZTC
Nom (V)
Min (V)
Max (V)
mA
mA
uA
V
Min
Max
BZT52C2V4
2.4
2.2
2.6
5
100
600
1.0
50
1.0
-3.5
0
mA
5
BZT52C2V7
2.7
2.5
2.9
5
100
600
1.0
20
1.0
-3.5
0
5
BZT52C3V0
3.0
2.8
3.2
5
95
600
1.0
10
1.0
-3.5
0
5
BZT52C3V3
3.3
3.1
3.5
5
95
600
1.0
5.0
1.0
-3.5
0
5
BZT52C3V6
3.6
3.4
3.8
5
90
600
1.0
5.0
1.0
-3.5
0
5
BZT52C3V9
3.9
3.7
4.1
5
90
600
1.0
3.0
1.0
-3.5
0
5
BZT52C4V3
4.3
4.0
4.6
5
90
600
1.0
3.0
1.0
-3.5
0
5
BZT52C4V7
4.7
4.4
5.0
5
80
500
1.0
3.0
2.0
-3.5
0.2
5
BZT52C5V1
5.1
4.8
5.4
5
60
480
1.0
2.0
2.0
-2.7
1.2
5
BZT52C5V6
5.6
5.2
6.0
5
40
400
1.0
1.0
2.0
-2
2.5
5
BZT52C6V2
6.2
5.8
6.6
5
10
150
1.0
3.0
4.0
0.4
3.7
5
BZT52C6V8
6.8
6.4
7.2
5
15
80
1.0
2.0
4.0
1.2
4.5
5
BZT52C7V5
7.5
7.0
7.9
5
15
80
1.0
1.0
5.0
2.5
5.3
5
BZT52C8V2
8.2
7.7
8.7
5
15
80
1.0
0.7
5.0
3.2
6.2
5
BZT52C9V1
9.1
8.5
9.6
5
15
100
1.0
0.5
6.0
3.8
7.0
5
BZT52C10
10
9.4
10.6
5
20
150
1.0
0.2
7.0
4.5
8.0
5
BZT52C11
11
10.4
11.6
5
20
150
1.0
0.1
8.0
5.4
9.0
5
BZT52C12
12
11.4
12.7
5
25
150
1.0
0.1
8.0
6.0
10.0
5
BZT52C13
13
12.4
14.1
5
30
170
1.0
0.1
8.0
7.0
11.0
5
BZT52C15
15
13.8
15.6
5
30
200
1.0
0.1
10.5
9.2
13.0
5
BZT52C16
16
15.3
17.1
5
40
200
1.0
0.1
11.2
10.4
14.0
5
BZT52C18
18
16.8
19.1
5
45
225
1.0
0.1
12.6
12.4
16.0
5
BZT52C20
20
18.8
21.2
5
55
225
1.0
0.1
14.0
14.4
18.0
5
BZT52C22
22
20.8
23.3
5
55
250
1.0
0.1
15.4
16.4
20.0
5
BZT52C24
24
22.8
25.6
5
70
250
1.0
0.1
16.8
18.4
22.0
5
BZT52C27
27
25.1
28.9
2
80
300
0.5
0.1
18.9
21.4
25.3
2
BZT52C30
30
28.0
32.0
2
80
300
0.5
0.1
21.0
24.4
29.4
2
BZT52C33
33
31.0
35.0
2
80
325
0.5
0.1
23.1
27.4
33.4
2
BZT52C36
36
34.0
38.0
2
90
350
0.5
0.1
25.2
30.4
37.4
2
BZT52C39
39
37.0
41.0
2
130
350
0.5
0.1
27.3
33.4
41.2
2
1. Device mounted on ceramic PCB; 7.6mm x 9.4mm x 0.87mm with pad areas 25mm2.
2. Short duration test pulse used to minimize self-heating effect.
3. f = 1kHz.
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0.6
50
IZ, ZENER CURRENT (mA)
PD, POWER DISSIPATION (W)
C2V7
C3V9
C3V3
0.5
0.4
0.3
0.2
0.1
0
Tj = 25°C
40
C5V6
C4V7
C6V8
C6V2
C8V2
30
20
10
Test Current IZ
5.0mA
0
0
25
75
50
100
125
150
0
1
3
4
5
6
8
9
7
VZ, ZENER VOLTAGE (V)
Fig. 2 Zener Breakdown Characteristics
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Power Dissipation vs Ambient Temperature
30
Tj = 25°C
10
C10
2
10
C39
Tj = 25°C
IZ, ZENER CURRENT (mA)
C15
20
C18
10
0
Test current IZ
2mA
C22
C27
Test current IZ
5mA
0
C33
C36
10
20
30
VZ, ZENER VOLTAGE (V)
Fig. 3 Zener Breakdown Characteristics
8
6
4
Test Current IZ
2mA
2
0
40
10
20
30 40 50 60 70 80 90 100
VZ, ZENER VOLTAGE (V)
Fig. 4 Zener Breakdown Characteristics
1000
Tj = 25 °C
f = 1MHz
VR = 1V
CT, TOTAL CAPACITANCE (pF)
IZ, ZENER CURRENT (mA)
C12
VR = 2V
100
VR = 1V
VR = 2V
10
1
10
100
VZ, NOMINAL ZENER VOLTAGE (V)
Fig. 5 Total Capacitance vs Nominal Zener Voltage
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