ON NCS2502 650 ua 110 mhz current feedback op amp with enable feature Datasheet

NCS2502
650 mA 110 MHz Current
Feedback Op Amp with
Enable Feature
NCS2502 is a 650 mA 110MHz current feedback monolithic
operational amplifier featuring high slew rate and low differential gain
and phase error. The current feedback architecture allows for a
superior bandwidth and low power consumption. This device features
an enable pin.
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MARKING
DIAGRAMS
Features
−3.0 dB Small Signal BW (AV = +2.0, VO = 0.5 Vp−p) 110 MHz Typ
Slew Rate 230 V/ms
Supply Current 650 mA
Input Referred Voltage Noise 5 nV/ ǸHz
THD −49 dB (f = 5.0 MHz, VO = 2.0 Vp−p)
Output Current 80 mA
Enable Pin Available
Pin Compatible with EL5160, MAX4452
Pb−Free Packages are Available
Portable Video
Line Drivers
Radar/Communication Receivers
Set Top Box
NTSC/PAL/HDTV
3
NORMAILIZED GAIN(dB)
2
1
VS = ±5.0V
VOUT = 0.5V
Gain = +2
RF = 1.2kW
RL = 100W
6
5
12
−2
3
VS = ±2.5V
VOUT = 1.0V
−5
0.1
1
6
YA2AYW
G
1
= NCS2502
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Date Code
= Pb−Free Package
SO−8 PINOUT
NC
1
−IN
2
+IN
3
VEE
4
8
EN
−
7
VCC
+
6
OUT
5
NC
(Top View)
VS = ±5.0V
VOUT = 1.0V
10
1
FREQUENCY (MHz)
YA2M
G
SOT23−6
(TSOP−6)
SN SUFFIX
CASE 318G
G
VS = ±5.0V
VOUT = 2.0V
−3
6
SC−70−6
(SC−88)
SQ SUFFIX
CASE 419B
4
M
VS = ±2.5V
VOUT = 0.5V
N2502
ALYW
G
1
YA2, N2502
A
L
Y
W
VS = ±2.5V
VOUT = 2.0V
−1
−6
0.01
1
1
0
−4
8
6
Applications
•
•
•
•
•
8
SO−8
D SUFFIX
CASE 751
SOT23−6/SC70−6 PINOUT
100
1000
Figure 1. Frequency Response:
Gain (dB) vs. Frequency Av = +2.0
OUT
1
VEE
2
+IN
3
+
•
•
•
•
•
•
•
•
•
−
6
VCC
5
EN
4
−IN
(Top View)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 13 of this data sheet.
© Semiconductor Components Industries, LLC, 2005
November, 2005 − Rev. 2
1
Publication Order Number:
NCS2502/D
NCS2502
PIN FUNCTION DESCRIPTION
Pin
(SO−8)
Pin
(SOT23/SC70)
Symbol
Function
6
1
OUT
Output
Equivalent Circuit
VCC
ESD
OUT
VEE
4
2
VEE
Negative Power Supply
3
3
+IN
Non−inverted Input
VCC
ESD
ESD
+IN
−IN
VEE
2
4
−IN
Inverted Input
7
6
VCC
Positive Power Supply
See Above
8
5
EN
Enable
VCC
EN
ESD
VEE
1, 5
N/A
NC
No Connect
ENABLE PIN TRUTH TABLE
Enable
High*
Low
Enabled
Disabled
*Default open state
VCC
+IN
OUT
−IN
CC
VEE
Figure 2. Simplified Device Schematic
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2
NCS2502
ATTRIBUTES
Characteristics
Value
ESD
Human Body Model
Machine Model
Charged Device Model
2.0 kV (Note 1)
200 V
1.0 kV
Moisture Sensitivity (Note 2)
Flammability Rating
Level 1
Oxygen Index: 28 to 34
UL 94 V−0 @ 0.125 in
1. 0.8 kV between the input pairs +IN and −IN pins only. All other pins are 2.0 kV.
2. For additional information, see Application Note AND8003/D.
MAXIMUM RATINGS
Parameter
Symbol
Rating
Unit
Power Supply Voltage
VS
11
VDC
Input Voltage Range
VI
vVS
VDC
Input Differential Voltage Range
VID
vVS
VDC
Output Current
IO
100
mA
Maximum Junction Temperature (Note 3)
TJ
150
°C
Operating Ambient Temperature
TA
−40 to +85
°C
Storage Temperature Range
Tstg
−60 to +150
°C
Power Dissipation
PD
(See Graph)
mW
Thermal Resistance, Junction−to−Air
SO−8
SC70−6
SOT23−6
°C/W
RqJA
172
215
154
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
3. Power dissipation must be considered to ensure maximum junction temperature (TJ) is not exceeded.
MAXIMUM POWER DISSIPATION
1400
Maximum Power Dissapation (mW)
The maximum power that can be safely dissipated is limited
by the associated rise in junction temperature. For the plastic
packages, the maximum safe junction temperature is 150°C.
If the maximum is exceeded momentarily, proper circuit
operation will be restored as soon as the die temperature is
reduced. Leaving the device in the “overheated’’ condition for
an extended period can result in device damage.
1200
SO−8 Pkg
1000
SOT23 Pkg
800
600
SC70 Pkg
400
200
0
−50
−25
0
50
75
25
100
Ambient Temperature (°C)
125
Figure 3. Power Dissipation vs. Temperature
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3
150
NCS2502
AC ELECTRICAL CHARACTERISTICS (VCC = +5.0 V, VEE = −5.0 V, TA = −40°C to +85°C, RL = 100 W to GND, RF = 1.2 kW,
AV = +2.0, Enable is left open, unless otherwise specified).
Symbol
Characteristic
Conditions
Min
Typ
Max
Unit
FREQUENCY DOMAIN PERFORMANCE
BW
GF0.1dB
Bandwidth
3.0 dB Small Signal
3.0 dB Large Signal
0.1 dB Gain Flatness
Bandwidth
MHz
AV = +2.0, VO = 0.5 Vp−p
AV = +2.0, VO = 2.0 Vp−p
110
90
AV = +2.0
15
MHz
dG
Differential Gain
AV = +2.0, RL = 150 W, f = 3.58 MHz
0.08
%
dP
Differential Phase
AV = +2.0, RL = 150 W, f = 3.58 MHz
0.2
°
Slew Rate
AV = +2.0, Vstep = 2.0 V
230
V/ms
Settling Time
0.01%
0.1%
AV = +2.0, Vstep = 2.0 V
AV = +2.0, Vstep = 2.0 V
160
35
(10%−90%) AV = +2.0, Vstep = 2.0 V
9.0
ns
TIME DOMAIN RESPONSE
SR
ts
ns
tr tf
Rise and Fall Time
tON
Turn−on Time
900
ns
tOFF
Turn−off Time
400
ns
HARMONIC/NOISE PERFORMANCE
THD
Total Harmonic Distortion
f = 5.0 MHz, VO = 2.0 Vp−p, RL = 150 W
−49
dB
HD2
2nd Harmonic Distortion
f = 5.0 MHz, VO = 2.0 Vp−p
−57
dBc
HD3
3rd Harmonic Distortion
f = 5.0 MHz, VO = 2.0 Vp−p
−53
dBc
IP3
Third−Order Intercept
f = 10 MHz, VO = 2.0 Vp−p
35
dBm
Spurious−Free Dynamic
Range
f = 5.0 MHz, VO = 2.0 Vp−p
55
dBc
SFDR
eN
Input Referred Voltage Noise
f = 1.0 MHz
5
nVń ǸHz
iN
Input Referred Current Noise
f = 1.0 MHz, Inverting
f = 1.0 MHz, Non−Inverting
25
25
pAń ǸHz
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4
NCS2502
DC ELECTRICAL CHARACTERISTICS (VCC = +5.0 V, VEE = −5.0 V, TA = −40°C to +85°C, RL = 100 W to GND, RF = 1.2 kW,
AV = +2.0, Enable is left open, unless otherwise specified).
Symbol
Characteristic
Conditions
Min
Typ
Max
Unit
−8.0
0
+8.0
mV
DC PERFORMANCE
VIO
DVIO/DT
IIB
DIIB/DT
Input Offset Voltage
Input Offset Voltage
Temperature Coefficient
Input Bias Current
Input Bias Current
Temperature Coefficient
VIH
Input High Voltage (Enable)
(Note 4)
VIL
Input Low Voltage (Enable)
(Note 4)
mV/°C
6.0
+Input (Non−Inverting), VO = 0 V
−Input (Inverting), VO = 0 V (Note 4)
−20
−20
+Input (Non−Inverting), VO = 0 V
−Input (Inverting), VO = 0 V
"3.0
"0.4
+20
+20
+40
−10
mA
nA/°C
VCC−1.5 V
V
VCC−3.5 V
V
INPUT CHARACTERISTICS
VCM
CMRR
Input Common Mode Voltage
Range (Note 4)
Common Mode Rejection
Ratio
RIN
Input Resistance
CIN
Differential Input
Capacitance
(See Graph)
"3.0
"4.0
V
50
55
dB
4
350
MW
W
1.0
pF
0.03
W
+Input (Non−Inverting)
−Input (Inverting)
OUTPUT CHARACTERISTICS
ROUT
Output Resistance
VO
Output Voltage Swing
"3.0
"3.5
V
IO
Output Current
"40
"80
mA
POWER SUPPLY
VS
Operating Voltage Supply
10
V
IS,ON
Power Supply Current −
Enabled
VO = 0 V
0.4
0.65
1.2
mA
IS,OFF
Power Supply Current −
Disabled
VO = 0 V
0
0.04
0.3
mA
PSRR
Power Supply Rejection
Ratio
(See Graph)
50
60
4. Guaranteed by design and characterization.
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5
dB
NCS2502
AC ELECTRICAL CHARACTERISTICS (VCC = +2.5 V, VEE = −2.5 V, TA = −40°C to +85°C, RL = 100 W to GND, RF = 1.2 kW,
AV = +2.0, Enable is left open, unless otherwise specified).
Symbol
Characteristic
Conditions
Min
Typ
Max
Unit
FREQUENCY DOMAIN PERFORMANCE
BW
GF0.1dB
Bandwidth
3.0 dB Small Signal
3.0 dB Large Signal
0.1 dB Gain Flatness
Bandwidth
MHz
AV = +2.0, VO = 0.5 Vp−p
AV = +2.0, VO = 2.0 Vp−p
110
70
AV = +2.0
10
MHz
dG
Differential Gain
AV = +2.0, RL = 150 W, f = 3.58 MHz
0.08
%
dP
Differential Phase
AV = +2.0, RL = 150 W, f = 3.58 MHz
0.2
°
Slew Rate
AV = +2.0, Vstep = 1.0 V
180
V/ms
Settling Time
0.01%
0.1%
AV = +2.0, Vstep = 1.0 V
AV = +2.0, Vstep = 1.0 V
155
25
(10%−90%) AV = +2.0, Vstep = 1.0 V
8.0
ns
TIME DOMAIN RESPONSE
SR
ts
ns
tr tf
Rise and Fall Time
tON
Turn−on Time
900
ns
tOFF
Turn−off Time
400
ns
HARMONIC/NOISE PERFORMANCE
THD
Total Harmonic Distortion
f = 5.0 MHz, VO = 1.0 Vp−p, RL = 150 W
−49
dB
HD2
2nd Harmonic Distortion
f = 5.0 MHz, VO = 1.0 Vp−p
−57
dBc
HD3
3rd Harmonic Distortion
f = 5.0 MHz, VO = 1.0 Vp−p
−53
dBc
IP3
Third−Order Intercept
f = 10 MHz, VO = 1.0 Vp−p
35
dBm
Spurious−Free Dynamic
Range
f = 5.0 MHz, VO = 1.0 Vp−p
55
dBc
SFDR
eN
Input Referred Voltage Noise
f = 1.0 MHz
5
nVń ǸHz
iN
Input Referred Current Noise
f = 1.0 MHz, Inverting
f = 1.0 MHz, Non−Inverting
25
25
pAń ǸHz
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6
NCS2502
DC ELECTRICAL CHARACTERISTICS (VCC = +2.5 V, VEE = −2.5 V, TA = −40°C to +85°C, RL = 100 W to GND, RF = 1.2 kW,
AV = +2.0, Enable is left open, unless otherwise specified).
Symbol
Characteristic
Conditions
Min
Typ
Max
Unit
−8.0
0
+8.0
mV
DC PERFORMANCE
VIO
DVIO/DT
IIB
DIIB/DT
Input Offset Voltage
Input Offset Voltage
Temperature Coefficient
Input Bias Current
+Input (Non−Inverting), VO = 0 V
−Input (Inverting), VO = 0 V (Note 5)
Input Bias Current
Temperature Coefficient
VIH
Input High Voltage (Enable)
(Note 5)
VIL
Input Low Voltage (Enable)
(Note 5)
mV/°C
6.0
−20
−20
+Input (Non−Inverting), VO = 0 V
−Input (Inverting), VO = 0 V
"3.0
"0.4
+20
+20
+40
−10
mA
nA/°C
VCC−1.5 V
V
VCC−3.5 V
V
INPUT CHARACTERISTICS
VCM
CMRR
Input Common Mode Voltage
Range (Note 5)
Common Mode Rejection
Ratio
RIN
Input Resistance
CIN
Differential Input
Capacitance
(See Graph)
"1.3
"1.5
V
50
55
dB
4
350
MW
W
1.0
pF
0.02
W
+Input (Non−Inverting)
−Input (Inverting)
OUTPUT CHARACTERISTICS
ROUT
Output Resistance
VO
Output Voltage Swing
"1.1
"1.4
V
IO
Output Current
"40
"80
mA
POWER SUPPLY
VS
Operating Voltage Supply
5.0
V
IS,ON
Power Supply Current −
Enabled
VO = 0 V
0.3
0.55
1.1
mA
IS,OFF
Power Supply Current −
Disabled
VO = 0 V
0
0.04
0.3
mA
PSRR
Power Supply Rejection
Ratio
(See Graph)
50
60
5. Guaranteed by design and characterization.
+
−
VIN
VOUT
RL
RF
RF
Figure 4. Typical Test Setup
(AV = +2.0, RF = 1.8 kW or 1.2 kW or 1.0 kW, RL = 100 W)
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7
dB
NCS2502
3
6
NORMAILIZED GAIN(dB)
1
0
VS = ±5.0V
VOUT = 0.5V
VS = ±2.5V
VOUT = 0.5V
NORMALIZED GAIN (dB)
Gain = +2
RF = 1.2kW
RL = 100W
2
VS = ±2.5V
VOUT = 2.0V
−1
−2
VS = ±5V
VOUT = 2.0V
−3
−4
−5
−6
0.01
VS = ±5.0V
VOUT = 1.0V
0.1
VS = ±2.5V
VOUT = 1.0V
1
10
FREQUENCY (MHz)
Gain = +1
RF = 1.2kW
RL = 100W
3
0
VS = ±2.5V
VOUT = 1.0V
−6
−12
0.01
1000
Figure 5. Frequency Response:
Gain (dB) vs. Frequency
Av = +2.0
VS = ±2.5V
VOUT = 0.7V
VS = ±5.0V
VOUT = 1.0V
0.10
1
10
FREQUENCY (MHz)
100
1000
Figure 6. Frequency Response:
Gain (dB) vs. Frequency
Av = +1.0
6
6
VS = ±5V
AV = +4
3
NORMAILIZED GAIN(dB)
NORMALIZED GAIN (dB)
VS = ±5.0V
VOUT = 0.7V
VS = ±5.0V
VOUT = 1.0V
−3
−9
100
VS = ±2.5V
VOUT = 1.0V
0
VS = ±2.5V
AV = +2
−3
VS = ±5V
AV = +2
−6
VOUT = 2.0V
RL = 100W
−9
−12
0.01
0.10
VS = ±2.5V
AV = +4
1
10
FREQUENCY (MHz)
VS = ±5.0V
AV = +2
3
0
VS = ±2.5V
AV = +4
−3
−6
VOUT = 0.5V
RL = 100W
−9
100
−12
0.01
1000
0.10
VS = ±5.0V
AV = +4
VS = ±2.5V
AV = +2
10
1
FREQUENCY (MHz)
100
Figure 7. Large Signal Frequency Response
Gain (dB) vs. Frequency
Figure 8. Small Signal Frequency Response
Gain (dB) vs. Frequency
Figure 9. Small Signal Step Response
Vertical: 500 mV/div
Horizontal: 10 ns/div
Figure 10. Large Signal Step Response
Vertical: 1 V/div
Horizontal: 10 ns/div
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8
1000
NCS2502
−30
−40
VS = ±5V
f = 5MHz
RL = 150W
DISTORTION (dB)
−40
−45
DISTORTION (dB)
−35
−45
HD3
THD
−50
−55
−60
HD2
−65
VS = ±5V
VOUT= 2VPP
RL = 150W
THD
−50
HD3
−55
HD2
−60
−70
−65
−75
−70
−80
1
10
FREQUENCY (MHz)
0.5
100
Figure 11. THD and Harmonic Distortion (dB) vs
Frequency (MHz)
VS = ±5V
7
−25
3.5
4
VS = ±5V
−30
6
CMRR (dB)
VOLTAGE NOISE (nV/pHz)
3
−20
5
4
3
−35
−40
−45
−50
2
−55
1
−60
0
−65
10k
1
10
100
FREQUENCY (kHz)
1000
100k
Figure 13. Input Referred Noise vs. Frequency
1M
FREQUENCY (Hz)
10M
100M
Figure 14. CMRR vs. Frequency
0
0.1
VS = ±5V
RL = 150W
0.08
DIFFERENTIAL GAIN (%)
−10
−20
PSRR(dB)
2
2.5
VOUT (VPP)
Figure 12. THD and Harmonic Distortion (dB) vs
Output Voltage (VPP)
8
+2.5V
−30
−40
−50
1.5
1
+5.0V
−2.5V
−60
−70
0.01
−5.0V
0.1
1
FREQUENCY (MHz)
0.06
0.04
0.02
4.43MHz
3.58MHz
0
−0.02
−0.04
10MHz
−0.06
−0.08
10
−0.1
−0.8
100
Figure 15. PSRR vs. Frequency
−0.6
0.4
0.2
−0.4 −0.2
0
OFFSET VOLTAGE (V)
Figure 16. Differential Gain
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9
0.6
0.8
NCS2502
0.3
VS = ±5V
RL = 150W
CURRENT (mA)
DIFFERENTIAL PHASE (°)
0.2
0.9
0.1
3.58MHz
0
−0.1
0.8
85°C
0.7
25°C
0.6
−40°C
0.5
4.43MHz
0.4
−0.2
10MHz
−0.3
−0.8
0.3
−0.6
0.4
0.2
−0.4 −0.2
0
OFFSET VOLTAGE (V)
0.8
0.6
4
Figure 17. Differential Phase
5
6
7
9
8
SUPPLY VOLTAGE (V)
10
11
Figure 18. Supply Current vs. Power Supply
(Enabled)
8
0.12
85°C
25°C
OUTPUT VOLTAGE (VPP)
CURRENT (mA)
0.1
−40°C
0.08
0.06
0.04
0.02
25°C
6
85°C
5
−40°C
4
3
0
2
4
5
6
8
7
9
SUPPLY VOLTAGE (V)
10
11
4
Figure 19. Supply Current vs. Temperature
(Disabled)
5
6
8
7
9
SUPPLY VOLTAGE (V)
10
11
Figure 20. Output Voltage Swing vs. Supply Voltage
100
9
8
VS = ±5V
OUTPUT RESISTANCE (W)
OUTPUT VOLTAGE (VPP)
7
7
6
5
VS = ±2.5V
4
3
2
AV = +2
f = 1MHz
1
10
100
1000
LOAD RESISTANCE (W)
10
1
0.1
0.01
0.01
0
1
VS = ±5V
10k
Figure 21. Output Voltage Swing vs. Load
Resistance
0.1
1
10
FREQUENCY (MHz)
Figure 22. Output Resistance vs. Frequency
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10
100
NCS2502
10M
12
1M
TRANSIMPEDANCE (W)
18
Gain(dB)
6
VS = ±5V
100k
0
100pF
−6
−12
47pF
VS = ±5V
RF = 1.2kW
RL = 100W
Gain= +2
−18
−24
1k
100
10pF
10
1
0.01
−30
1
10k
10
100
Frequency (MHz)
1000
Figure 23. Frequency Response vs. CL
EN
0.1
1
100
10
FREQUENCY (MHz)
1000
10k
Figure 24. Transimpedance (ROL) vs. Frequency
EN
OUT
OUT
Output Signal: Squarewave, 10MHz, 2VPP
Output Signal: Squarewave, 10MHz, 2VPP
Figure 25. Turn ON Time Delay
Horizontal: 4 ns / Div
Vertical: 10mV/Div
Figure 26. Turn OFF Time Delay
Horizontal: 4 ns / Div
Vertical: 10mV/Div
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NCS2502
General Design Considerations
resistor too far below its recommended value will cause
overshoot, ringing, and eventually oscillation.
Since each application is slightly different, it is worth some
experimentation to find the optimal RF for a given circuit. A
value of the feedback resistor that produces X0.1 dB of
peaking is the best compromise between stability and
maximal bandwidth. It is not recommended to use a current
feedback amplifier with the output shorted directly to the
inverting input.
The current feedback amplifier is optimized for use in high
performance video and data acquisition systems. For current
feedback architecture, its closed−loop bandwidth depends on
the value of the feedback resistor. The closed−loop bandwidth
is not a strong function of gain, as is for a voltage feedback
amplifier, as shown in Figure 27.
10
GAIN (dB)
5
Printed Circuit Board Layout Techniques
RF = 1 kW
0
Proper high speed PCB design rules should be used for all
wideband amplifiers as the PCB parasitics can affect the
overall performance. Most important are stray capacitances at
the output and inverting input nodes as it can effect peaking
and bandwidth. A space (3/16″ is plenty) should be left around
the signal lines to minimize coupling. Also, signal lines
connecting the feedback and gain resistors should be short
enough so that their associated inductance does not cause high
frequency gain errors. Line lengths less than 1/4″ are
recommended.
RF = 1.2 kW
−5
RF = 1.8 kW
−10
−15
AV = +2
VCC = +5 V
VEE = −5 V
−20
0.01
0.1
1.0
10
100
1000
10000
Video Performance
FREQUENCY (MHz)
This device designed to provide good performance with
NTSC, PAL, and HDTV video signals. Best performance is
obtained with back terminated loads as performance is
degraded as the load is increased. The back termination
reduces reflections from the transmission line and effectively
masks transmission line and other parasitic capacitances from
the amplifier output stage.
Figure 27. Frequency Response vs. RF
The −3.0 dB bandwidth is, to some extent, dependent on the
power supply voltages. By using lower power supplies, the
bandwidth is reduced, because the internal capacitance
increases. Smaller values of feedback resistor can be used at
lower supply voltages, to compensate for this affect.
ESD Protection
Feedback and Gain Resistor Selection for Optimum
Frequency Response
This device is protected against electrostatic discharge
(ESD) on all pins as specified in the attributes table. Note:
Human Body Model for +IN and −IN pins are rated at 0.8 kV
while all other pins are rated at 2.0 kV. Under closed−loop
operation, the ESD diodes have no effect on circuit
performance. However, under certain conditions the ESD
diodes will be evident. If the device is driven into a slewing
condition, the ESD diodes will clamp large differential
voltages until the feedback loop restores closed−loop
operation. Also, if the device is powered down and a large
input signal is applied, the ESD diodes will conduct.
A current feedback operational amplifier’s key advantage
is the ability to maintain optimum frequency response
independent of gain by using appropriate values for the
feedback resistor. To obtain a very flat gain response, the
feedback resistor tolerance should be considered as well.
Resistor tolerance of 1% should be used for optimum flatness.
Normally, lowering RF resistor from its recommended value
will peak the frequency response and extend the bandwidth
while increasing the value of RF resistor will cause the
frequency response to roll off faster. Reducing the value of RF
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12
NCS2502
ORDERING INFORMATION
Package
Shipping†
NCS2502SQT2G*
SC70−6 (SC88)
(Pb−Free)
3000 Tape & Reel
NCS2502SNT1G
SOT23−6 (TSOP−6)
(Pb−Free)
3000 Tape & Reel
NCS2502DG
SO−8
(Pb−Free)
98 Units/Rail
NCS2502DR2G
SO−8
(Pb−Free)
2500 Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*Contact ON Semiconductor for ordering information.
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13
NCS2502
PACKAGE DIMENSIONS
SO−8
D SUFFIX
CASE 751−07
ISSUE AG
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
6. 751−01 THRU 751−06 ARE OBSOLETE. NEW
STANDARD IS 751−07.
−X−
A
8
5
0.25 (0.010)
S
B
1
M
Y
M
4
K
−Y−
G
C
N
DIM
A
B
C
D
G
H
J
K
M
N
S
X 45 _
SEATING
PLANE
−Z−
0.10 (0.004)
H
D
0.25 (0.010)
M
Z Y
S
X
M
J
S
SOLDERING FOOTPRINT*
1.52
0.060
7.0
0.275
4.0
0.155
0.6
0.024
1.270
0.050
SCALE 6:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
14
MILLIMETERS
MIN
MAX
4.80
5.00
3.80
4.00
1.35
1.75
0.33
0.51
1.27 BSC
0.10
0.25
0.19
0.25
0.40
1.27
0_
8_
0.25
0.50
5.80
6.20
INCHES
MIN
MAX
0.189
0.197
0.150
0.157
0.053
0.069
0.013
0.020
0.050 BSC
0.004
0.010
0.007
0.010
0.016
0.050
0 _
8 _
0.010
0.020
0.228
0.244
NCS2502
PACKAGE DIMENSIONS
SC−70−6 (SC−88)
SQ SUFFIX
CASE 419B−02
ISSUE 02
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419B−01 OBSOLETE, NEW STANDARD 419B−02.
G
6
5
4
1
2
3
DIM
A
B
C
D
G
H
J
K
N
S
−B−
S
D 6 PL
0.2 (0.008)
M
B
M
INCHES
MIN
MAX
0.071 0.087
0.045 0.053
0.031 0.043
0.004 0.012
0.026 BSC
−−− 0.004
0.004 0.010
0.004 0.012
0.008 REF
0.079 0.087
N
J
C
H
K
SOLDERING FOOTPRINT*
0.50
0.0197
0.65
0.025
0.65
0.025
0.40
0.0157
1.9
0.0748
SCALE 20:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy
and soldering details, please download the
ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
15
MILLIMETERS
MIN
MAX
1.80
2.20
1.15
1.35
0.80
1.10
0.10
0.30
0.65 BSC
−−−
0.10
0.10
0.25
0.10
0.30
0.20 REF
2.00
2.20
NCS2502
PACKAGE DIMENSIONS
SOT23−6 (TSOP−6)
SN SUFFIX
CASE 318G−02
ISSUE M
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. MAXIMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS
OF BASE MATERIAL.
4. DIMENSIONS A AND B DO NOT INCLUDE
MOLD FLASH, PROTRUSIONS, OR GATE
BURRS.
A
L
6
S
1
5
4
2
3
B
MILLIMETERS
DIM MIN
MAX
A
2.90
3.10
B
1.30
1.70
C
0.90
1.10
D
0.25
0.50
G
0.85
1.05
H 0.013 0.100
J
0.10
0.26
K
0.20
0.60
L
1.25
1.55
M
0_
10 _
S
2.50
3.00
D
G
M
J
C
0.05 (0.002)
K
H
INCHES
MIN
MAX
0.1142 0.1220
0.0512 0.0669
0.0354 0.0433
0.0098 0.0197
0.0335 0.0413
0.0005 0.0040
0.0040 0.0102
0.0079 0.0236
0.0493 0.0610
0_
10 _
0.0985 0.1181
SOLDERING FOOTPRINT*
2.4
0.094
1.9
0.075
0.95
0.037
0.95
0.037
0.7
0.028
1.0
0.039
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 61312, Phoenix, Arizona 85082−1312 USA
Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada
Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
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Order Literature: http://www.onsemi.com/litorder
Japan: ON Semiconductor, Japan Customer Focus Center
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Phone: 81−3−5773−3850
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16
For additional information, please contact your
local Sales Representative.
NCS2502/D