HABT2222A(NPN) SWITCHING TRANSISTOR REPLACEMENT TYPE : MMBT2222A FEATURES Epitaxial Planar Die Construction Complementary PNP Type available(HABT2907A) MAXIMUM RATINGS (T A = 25°C unless otherwise noted) Parameter Symbol Value SOT-23 Unit Collector-Base Voltage VCBO 75 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6 V Collector Current-Continuous IC 600 mA Collector Power Dissipation PC 300 mW Thermal Resistance Junction to Ambient RθJA 417 °C /W Junction Temperature TJ 150 °C Storage Temperature Tstg -55 to +150 °C 1: BASE 2:EMITTER 3: COLLECTOR ELECTRICAL CHARACTERISTICS (T A= 25°C unless otherwise noted) Parameter Symbol Test conditions Collector-Base Breakdown Voltage VCBO IC=10μA,IE=0 75 V Collector-Emitter Breakdown Voltage VCEO IC=10mA,IB=0 40 V Emitter-Base Breakdown Voltage VEBO IE=10uA,IC=0 6 V Collector Cut-off Current ICBO VCB=60V,IE=0 0.01 μA Collector cut-off current ICEX VCE=30V,VBE(off)=3V 0.01 μA Emitter Cut-off Current IEBO VEB=3V,IC=0 0.1 μA hFE(1) VCE=10V,IC=150mA 100 hFE(2) VCE=10V,IC=0.1mA 40 hFE(3) VCE=10V,IC=500mA 42 Collector-Emitter Saturation Voltage VCE(sat) IC=500mA,IB=50mA IC=150mA,IB=15mA 1 0.3 V Base-Emitter Saturation Voltage VBE(sat) 2.0 1.2 V Transition Frequency fT IC=500 mA,IB=50mA IC=150mA,IB=15mA VCE=20V,IC=-20mA f=100MHz Delay Time tD Rise Time tR Storage Time tS Fall Time tF DC Current Gain CLASSIFICATION OF hFE Rank Range Marking ©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD Min Typ Max Unit 300 300 MHz VCC=30V, VBE(off)=-0.5V IC=150mA,IB1= 15mA VCC=30V, IC=150mA IB1=-IB2=15mA L H 100-200 200-300 10 nS 25 nS 225 nS 60 nS 1P E-mail:[email protected] 1/4 HABT2222A(NPN) SWITCHING TRANSISTOR Typical Characteristics 500 COMMON EMITTER VCE=10V 1mA COMMON EMITTER Ta=25℃ 0.9mA 0.20 400 0.8mA 0.7mA DC CURRENT GAIN hFE COLLECTOR CURRENT IC (A) —— IC hFE Static Characteristic 0.25 0.6mA 0.15 0.5mA 0.10 0.4mA 0.3mA 0.05 Ta=100℃ 300 Ta=25℃ 200 100 0.2mA IB=0.1mA 0.00 0 2 4 6 8 COLLECTOR-EMITTER VOLTAGE VCEsat 0.5 10 VCE 0 0.1 12 IC —— 1 (V) 10 100 COLLECTOR CURRENT IC VBEsat IC 1.2 —— 600 (mA) 0.4 BASE-EMITTER SATURATION VOLTAGE VBEsat (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) β=10 0.3 0.2 Ta=100℃ 0.1 Ta=25℃ Ta=25℃ 0.8 Ta=100℃ 0.4 β=10 0.0 0.0 1 10 100 COLLECTOR CURRENT IC IC 1 600 10 (mA) 100 COLLECTOR CURRENT —— VBE Cob/ Cib —— IC VCB/ VEB 100 600 f=1MHz IE=0/ IC=0 Ta=100℃ 10 Ta=25℃ 1 0.2 0.4 0.6 0.8 Cob 10 1 0.1 1.0 1 BASE-EMMITER VOLTAGE VBE (V) 500 Ta=25℃ Cib 100 CAPACITANCE C (pF) COLLECTOR CURRENT IC (mA) COMMON EMITTER VCE=10V 0.1 0.0 600 (mA) fT 10 REVERSE VOLTAGE —— IC Pc 400 —— V 20 (V) Ta COMMON EMITTER VCE=20V f=200MHz COLLECTOR POWER DISSIPATION Pc (mW) TRANSTION FREQUENCY fT (MHz) Ta=25℃ 100 10 300 200 100 0 80 COLLECTOR CURRENT IC (mA) ©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD 0 25 50 75 AMBIENT TEMPERATURE E-mail:[email protected] 100 Ta 125 150 (℃) 2/4 HABT2222A(NPN) SWITCHING TRANSISTOR SOT-23 Package Outline Dimensions Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 0.900 1.150 0.035 0.045 A1 0.000 0.100 0.000 0.004 A2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 E1 2.250 2.550 0.089 0.100 e e1 0.950 TYP 1.800 L 0.037 TYP 2.000 0.071 0.550 RE F 0.079 0.022 RE F L1 0.300 0.500 0.012 0.020 θ 0° 8° 0° 8° ©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD E-mail:[email protected] 3/4 HABT2222A(NPN) SWITCHING TRANSISTOR SOT-23 Embossed Carrier Tape DIMENSIONS ARE IN MILLIMETER TYPE A B C d E F P0 P P1 W SOT-23 3.15 2.77 1.22 φ1.50 1.75 3.50 4.00 4.00 2.00 8.00 TOLERANCE ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 SOT-23 Tape Leader and Traller SOT-23 Reel DIMENSIONS ARE IN MILLIMETER REEL OPTION 7’’ DIA TOLERANCE D D1 D2 G H I W1 W2 φ178 54.40 13.00 R78 R25.60 R6.50 9.50 12.30 ±2 ±1 ±1 ±1 ±1 ±1 ±1 ±1 ©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD E-mail:[email protected] 4/4