Single N-channel Trench MOSFET 30V, 31.5A, 12.7mΩ ㄹ Features General Description The MDD1504 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDD1504 is suitable device for DC to DC converter and general purpose applications. VDS = 30V ID = 31.5A @VGS = 10V RDS(ON) (MAX) < 12.7mΩ @VGS = 10V < 18.8mΩ @VGS = 4.5V 100% UIL Tested 100% Rg Tested D G S Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Symbol Rating Unit VDSS 30 V VGSS ±20 V o TC=25 C TC=70oC Continuous Drain Current (1) o TA=25 C 31.5 ID TA=70oC Pulsed Drain Current IDM TC=25 C TC=70 C PD TA=70oC Single Pulse Avalanche Energy (2) Junction and Storage Temperature Range 100 A 20.8 o TA=25oC A 17.2(3) 13.83) o Power Dissipation 25.1 13.3 W 6.2(3) 4.0(3) EAS 23 TJ, Tstg -55~150 Symbol Rating RθJA 20.0 RθJC 6.0 mJ o C Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient (1) Thermal Resistance, Junction-to-Case May. 2011. Version 1.2 1 Unit o C/W MagnaChip Semiconductor Ltd. MDD1504 – Single N-Channel Trench MOSFET 30V MDD1504 Part Number Temp. Range MDD1504RH Package Packing Quantity Rohs Status D-PAK Tape & Reel 3000 units Halogen Free o -55~150 C Electrical Characteristics (TJ =25oC) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V 30 - - Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 1.3 1.9 2.7 Drain Cut-Off Current IDSS Gate Leakage Current IGSS VDS = 30V, VGS = 0V TJ=55oC VGS = ±20V, VDS = 0V VGS = 10V, ID = 13A Drain-Source ON Resistance Forward Transconductance - 1 - 5 - - ±0.1 - 11.0 12.7 - 16.0 18.4 VGS = 4.5V, ID = 11A - 15.7 18.8 VDS = 5V, ID = 10A - 27 - 7.3 9.7 12.1 3.3 4.5 5.6 - 1.8 - - 3.3 - 435 580 725 43 57 71 94 126 158 TJ=125oC RDS(ON) gfs - V µA mΩ S Dynamic Characteristics Total Gate Charge Qg(10V) Total Gate Charge Qg(4.5V) Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = 15.0V, ID = 13A, VGS = 10V nC Input Capacitance Ciss Reverse Transfer Capacitance Crss Output Capacitance Coss Turn-On Delay Time td(on) - 6.7 - tr VGS = 10V, VDS = 15.0V, ID = 13A , RG = 3.0Ω - 11.7 - - 13.5 - - 7.0 - Rg f=1 MHz - 6.6 8.5 Ω VSD IS = 13A, VGS = 0V - 0.87 1.1 V - 17.5 26.3 ns - 9.8 14.7 nC Rise Time Turn-Off Delay Time Fall Time Gate Resistance td(off) VDS = 15.0V, VGS = 0V, f = 1.0MHz tf pF ns Drain-Source Body Diode Characteristics Source-Drain Diode Forward Voltage Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr IF = 13A, dl/dt = 100A/µs Note : 1. 2. 3. Surface mounted FR-4 board by JEDEC (jesd51-7) EAS is tested at starting Tj = 25℃, L = 0.1mH, IAS = 12.0A, VDD = 27V, VGS = 10V T < 10sec. May. 2011. Version 1.2 2 MagnaChip Semiconductor Ltd. MDD1504 – Single N-Channel Trench MOSFET 30V Ordering Information 28 VGS = 10V Drain-Source On-Resistance [mΩ] 4.0V ID, Drain Current [A] 3.5V 4.5V 30 5.0V 20 3.0V 10 24 20 VGS = 4.5V 16 VGS = 10V 12 8 4 0 0.0 0.5 1.0 1.5 2.0 2.5 0 3.0 0 5 10 VDS, Drain-Source Voltage [V] 20 25 30 Fig.2 On-Resistance Variation with Drain Current and Gate Voltage Fig.1 On-Region Characteristics 50 1.8 ※ Notes : ID = 13.0A ※ Notes : 1. VGS = 10 V 2. ID = 13.0 A 1.6 RDS(ON) [mΩ ], Drain-Source On-Resistance RDS(ON), (Normalized) Drain-Source On-Resistance 15 ID, Drain Current [A] 1.4 1.2 1.0 40 30 20 TA = 25℃ 10 0.8 0.6 -50 0 -25 0 25 50 75 100 125 2 150 3 4 5 6 7 8 9 10 VGS, Gate to Source Volatge [V] o TJ, Junction Temperature [ C] Fig.3 On-Resistance Variation with Temperature Fig.4 On-Resistance Variation with Gate to Source Voltage 20 ※ Notes : ※ Notes : VDS = 5V IDR, Reverse Drain Current [A] VGS = 0V ID, Drain Current [A] 16 12 TA=25℃ 8 4 0 0 1 2 3 4 TA=25℃ 0 10 0.3 5 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 VSD, Source-Drain voltage [V] VGS, Gate-Source Voltage [V] Fig.5 Transfer Characteristics May. 2011. Version 1.2 1 10 Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature 3 MagnaChip Semiconductor Ltd. MDD1504 – Single N-Channel Trench MOSFET 30V 40 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd ※ Note : ID = 13A VDS = 15V Ciss VGS, Gate-Source Voltage [V] 8 Capacitance [pF] 600 6 4 400 200 ※ Notes ; 1. VGS = 0 V 2. f = 1 MHz Coss 2 Crss 0 0 0 2 4 6 8 0 10 5 10 15 20 25 30 VDS, Drain-Source Voltage [V] Q G, Total Gate Charge [nC] Fig.7 Gate Charge Characteristics Fig.8 Capacitance Characteristics 40 Operation in This Area is Limited by R DS(on) 35 1 ms 2 10 30 ID, Drain Current [A] ID, Drain Current [A] 10 ms 100 ms 1s 1 10 10s DC 0 10 25 20 15 10 Single Pulse TJ=Max rated TC=25℃ -1 10 5 0 10 -1 10 0 1 2 10 25 10 50 75 100 125 150 T A, Case Temperature [℃] VDS, Drain-Source Voltage [V] Fig.10 Maximum Drain Current vs. Case Temperature Fig.9 Maximum Safe Operating Area 1 10 0.2 0 10 0.1 0.05 0.02 -1 10 0.01 Zθ JC , Thermal Response D=0.5 single pulse -2 ※ Notes : Duty Factor, D=t1/t2 PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC 10 -3 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 10 t1, Rectangular Pulse Duration [sec] Fig.11 Transient Thermal Response Curve May. 2011. Version 1.2 4 MagnaChip Semiconductor Ltd. MDD1504 – Single N-Channel Trench MOSFET 30V 800 10 D-PAK (TO-252) Dimensions are in millimeters, unless otherwise specified May. 2011. Version 1.2 5 MagnaChip Semiconductor Ltd. MDD1504 – Single N-Channel Trench MOSFET 30V Package Dimension MDD1504 – Single N-Channel Trench MOSFET 30V DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd. May. 2011. Version 1.2 6 MagnaChip Semiconductor Ltd.