DIGITRON SEMICONDUCTORS C35 SERIES SILICON CONTROLLED RECTIFIERS Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. MAXIMUM RATINGS Rating Symbol Peak repetitive forward and reverse blocking voltage (TC = -65 to +125°C) C35U C35F C35A C35G C35B C35H C35C C35D C35E C35M C35S C35N Value Unit (1) VDRM or VRRM Non-repetitive peak reverse voltage (TC = -65 to +125°C, V < 5.0ms) C35U C35F C35A C35G C35B C35H C35C C35D C35E C35M C35S C35N VRSM Forward current RMS (all conduction angles) 25 50 100 150 200 250 300 400 500 600 700 800 Volts 35 75 150 225 300 350 400 500 600 720 840 960 Volts IT(RMS) 35 Amps Peak non-repetitive surge current (1cycle, 60 Hz) ITSM 225 Amps Circuit fusing considerations (t = 8.3ms) I2t 75 A2s Forward peak gate power PGM 5 Watts Forward average gate power PG(AV) 0.5 Watts Peak reverse gate voltage VGRM 5 Volts TJ -65 to +125 °C Tstg -65 to +150 °C Operating junction temperature range Storage temperature range Note 1: VDRM and VRRM for all types can be applied on a continuous dc basis without incurring damage. Ratings apply for zero or negative gate voltage. Devices should not be tested for blocking capability in a manner such that the voltage supplied exceeds the rated blocking voltage. THERMAL CHARACTERISTICS Characteristic Thermal resistance, junction to case 144 Market Street Kenilworth NJ 07033 USA Symbol Maximum Unit RӨJC 1.7 °C/W phone +1.908.245-7200 fax +1.908.245-0555 [email protected] www.digitroncorp.com Rev. 20130129 DIGITRON SEMICONDUCTORS C35 SERIES SILICON CONTROLLED RECTIFIERS ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Peak reverse or forward blocking current (VD = Rated VDRM, TC = 125°C) (VR = Rated VRRM, TC = 125°C) C35U,F, A, G C35B C35H C35C C35D C35E C35M C35S C35N Symbol IDRM or IRRM Average forward or reverse blocking current (VD = Rated VDRM, TC = 125°C) (VR = Rated VRRM, TC = 125°C) C35U,F, A, G C35B C35H C35C C35D C35E C35M C35S C35N IDRM(AV) or IRRM(AV) Min Typ. Max - - 13 12 11 10 8 6 5 4.5 4 - - 6.5 6 5.5 5 4 3 2.5 2.25 2 - - 2 Unit mA mA Peak on-state voltage (ITM = 50.3A peak, pulse width ≤ 1ms, duty cycle ≤ 2.0%) VTM Gate trigger current (continuous dc) (VD = 12V, RL = 50Ω) (VD = 12V, RL = 50Ω, TC = -65°C) IGT - 6 - 40 80 mA Gate trigger voltage (continuous dc) (VD = 12V, RL = 50Ω, TC = -65°C to +125°C) (VD = Rated VDRM, RL = 1000Ω, TC = 125°C) VGT 0.25 - 3 - Volts - - 100 10 20 25 - - Holding current (VD = 24V, gate supply = 10V, 20Ω, 45µs minimum pulse width, IT = 0.5A) Critical rate of rise of forward blocking voltage (VD = Rated VDRM, TC = 125°C) C35U, F, M, S, N C35A, G, B, H C35C, D, E 144 Market Street Kenilworth NJ 07033 USA phone +1.908.245-7200 fax +1.908.245-0555 IH dv/dt [email protected] www.digitroncorp.com Rev. 20130129 Volts mA V/µs DIGITRON SEMICONDUCTORS C35 SERIES SILICON CONTROLLED RECTIFIERS MECHANICAL CHARACTERISTICS Case TO-48 Marking Alpha-numeric Polarity Cathode is stud TO-48 A B C F H J K L Q T 144 Market Street Kenilworth NJ 07033 USA Inches Min Max 0.604 0.614 0.551 0.559 1.050 1.190 0.135 0.160 0.265 0.420 0.455 0.620 0.670 0.300 0.350 0.055 0.085 0.501 0.505 phone +1.908.245-7200 fax +1.908.245-0555 Millimeters Min Max 15.340 15.600 14.000 14.200 2.670 30.230 3.430 4.060 6.730 10.670 11.560 15.750 17.020 7.620 8.890 1.400 2.160 12.730 12.830 [email protected] www.digitroncorp.com Rev. 20130129