ISL60007 ® Data Sheet April 21, 2006 Precision 2.50V, 1.08µ-Watt, High Precision FGA™ Voltage References FN8087.3 Features • Reference Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . 2.50V The ISL60007 FGA™ voltage references are extremely low power, very high precision analog voltage references fabricated in Intersil's proprietary Floating Gate Analog technology. The ISL60007 features low supply voltage operation at ultra-low 400nA operating current resulting in typical 1.08µW power consumption. • Absolute Initial Accuracy Options. . . . . ±0.5mV, & ±1.0mV • 1.08µW typical Power Consumption • Supply Voltage Range . . . . . . . . . . . . . . . . . . 2.7V to 5.5V • Ultra-Low Supply Current. . . . . . . . . . . . . . . . . . . . .400nA In addition, the ISL60007 family features guaranteed initial accuracy as low as ±0.5mV, temperature coefficients as tight as 3ppm/°C and long-term stability of 10ppm/√1kHrs. • Low Temperature Coefficient Options . . . . . . . . . 3ppm/°C 5ppm/°C, & 10ppm/°C • Long Term Stability. . . . . . . . . . . . . . . . . . . 10ppm/√1kHrs The initial accuracy and thermal stability performance of the ISL60007 family plus the low power consumption eliminates the need to compromise accuracy and thermal stability for reduced power consumption making it an ideal high resolution, low power data conversion system. • 7mA Source & Sink Current Pinout • Pb-Free Plus Anneal Available (RoHS Compliant) ISL60007 (8 LD SOIC) TOP VIEW • ESD Protection. . . . . . . . . . . . . 5kV (Human Body Model) • Standard 8 Ld SOIC Packaging • Temperature Range . . . . . . . . . . . . . . . . . . -40°C to +85°C Applications GND 1 8 DNC VIN 2 7 DNC DNC 3 6 VOUT GND 4 5 DNC • High Resolution A/Ds & D/As • Digital Meters • Bar Code Scanners • Mobile Communications • PDA’s and Notebooks Pin Descriptions • Battery Management Systems PIN NAME GND VIN DESCRIPTION • Medical Systems Ground Connection Power Supply Input Connection VOUT Voltage Reference Output Connection DNC Do Not Connect; Internal Connection - Must Be Left Floating Ordering Information PART NUMBER PART MARKING VOUT OPTION GRADE TEMP. RANGE (°C) PACKAGE PKG. DWG. # ISL60007BIB825 60007BI 25 2.500V ±0.5mV, 3ppm/°C -40 to +85 8 Ld SOIC ISL60007BIB825Z (Note) 60007BI Z25 2.500V ±0.5mV, 3ppm/°C -40 to +85 8 Ld SOIC (Pb-free) MDP0027 MDP0027 ISL60007CIB825 60007CI 25 2.500V ±0.5mV, 5ppm/°C -40 to +85 8 Ld SOIC MDP0027 ISL60007CIB825Z (Note) 60007CI Z25 2.500V ±0.5mV, 5ppm/°C -40 to +85 8 Ld SOIC (Pb-free) MDP0027 ISL60007DIB825 60007DI 25 2.500V ±1.0mV, 10ppm/°C -40 to +85 8 Ld SOIC ISL60007DIB825Z (Note) 60007DI Z25 2.500V ±1.0mV, 10ppm/°C -40 to +85 8 Ld SOIC (Pb-free) MDP0027 MDP0027 *Add "-TK" suffix for tape and reel. NOTE: Intersil Pb-free plus anneal products employ special Pb-free material sets; molding compounds/die attach materials and 100% matte tin plate termination finish, which are RoHS compliant and compatible with both SnPb and Pb-free soldering operations. Intersil Pb-free products are MSL classified at Pb-free peak reflow temperatures that meet or exceed the Pb-free requirements of IPC/JEDEC J STD-020. 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or1-888-468-3774 | Intersil (and design) is a registered trademark of Intersil Americas Inc. Copyright Intersil Americas Inc. 2004-2006. All Rights Reserved All other trademarks mentioned are the property of their respective owners. ISL60007 Typical Application VIN = +3.0V 0.1µF VIN 10µF VOUT 0.001µF* ISL60007 GND REF IN SERIAL BUS ENABLE SCK SDAT 16 TO 24-BIT A/D CONVERTER *Also see Figure 17 in Applications Information. 2 FN8087.3 April 21, 2006 ISL60007 Absolute Maximum Ratings Recommended Operating Conditions Storage Temperature Range . . . . . . . . . . . . . . . . . .-65°C to +125°C Max Voltage VIN to Gnd. . . . . . . . . . . . . . . . . . . . . . . -0.5V to +6.5V Max Voltage VOUT to Gnd (10s) . . . . . . . . . . . . . . . -0.5V to +3.50V Voltage on “DNC” Pins. . . . No connections permitted to these pins. Lead Temperature, Soldering (10s) . . . . . . . . . . . . . . . . . . . . +225°C Temperature Range (Industrial) . . . . . . . . . . . . . . . . . . -40°C to 85°C CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Electrical Specifications SYMBOL Operating Conditions: VIN = 3.0V, IOUT = 0mA, COUT = 0.001µF, TA = -40 to +85°C, Unless Otherwise Specified. PARAMETER CONDITIONS MIN TYP MAX UNITS 2.500V OUTPUT VOLTAGE VOUT VOA TC VOUT Output Voltage 2.500 VOUT Accuracy @ TA = 25°C Output Voltage Temperature Coefficient (Note 1) VIN Input Voltage Range IIN Supply Current ΔVOUT/ΔVIN Line Regulation ΔVOUT/ΔIOUT Load Regulation V ISL60007B25 -0.5 +0.5 mV ISL60007C25 -0.5 +0.5 mV ISL60007D25 -1.0 +1.0 mV ISL60007B25 3 ppm/°C ISL60007C25 5 ppm/°C ISL60007D25 10 ppm/°C 5.5 V 400 800 nA +2.7V ≤ VIN ≤ +5.5V 30 200 µV/V Sourcing: 0mA ≤ IOUT ≤ 7mA 15 50 µV/mA Sinking: -7mA ≤ IOUT ≤ 0mA 50 150 µV/mA 2.7 ΔVOUT/Δt Long Term Stability (Note 4) TA = 25°C 10 ppm/√1kHrs ΔVOUT/ΔTA Thermal Hysteresis (Note 2) ΔTA = 125°C 50 ppm ISC Short Circuit Current (Note 3) TA = 25°C, VOUT tied to Gnd 40 VN Output Voltage Noise 0.1Hz ≤ f ≤ 10Hz 30 80 mA µVp-p NOTES: 1. Over the specified temperature range. Temperature coefficient is measured by the box method whereby the change in VOUT is divided by the temperature range; in this case, -40°C to +85°C = 125°C. 2. Thermal Hysteresis is the change in VOUT measured @ TA = 25°C after temperature cycling over a specified range, ΔTA. VOUT is read initially at TA = 25°C for the device under test. The device is temperature cycled and a second VOUT measurement is taken at 25°C. The difference between the initial VOUT reading and the second VOUT reading is then expressed in ppm. For ΔTA = 125°C, the device under test is cycled from +25°C to +85°C to -40°C to +25°C. 3. Guaranteed by device characterization and/or correlation to other device tests. 4. FGA voltage reference long term drift is a logarithmic characteristic. Changes that occur after the first few hundred hours of operation are significantly smaller with time, asymptotically approaching zero beyond 1000 hours. Because of this decreasing characteristic, long term drift is specified in ppm/√1kHrs. 3 FN8087.3 April 21, 2006 ISL60007 Typical Performance Curves, 2.5V Reference VIN = 3.0V, IOUT = 0mA, TA = 25°C Unless Otherwise Specified 800 500 700 450 570nA 600 IIN (nA) IIN (nA) +85°C 500 400nA 400 400 +25°C -40°C 300 250nA 350 200 100 2.7 3.4 4.1 4.8 300 2.7 5.5 3.4 VIN (V) 4.1 4.8 5.5 VIN (V) FIGURE 1. IIN vs VIN - 3 UNITS FIGURE 2. IIN vs VIN - 3 TEMPS 2.50030 2.5008 NORMALIZED TO 2.50V AT VIN = 3V NORMALIZED TO +25°C 2.5006 UNIT 2 2.50020 2.5004 UNIT 2 UNIT 1 UNIT 3 VOUT (V) VOUT (V) 2.5002 2.5 2.4998 UNIT 3 2.50010 UNIT 1 2.50000 2.4996 2.49990 2.4994 2.4992 -40 -15 10 35 TEMPERATURE (°C) 60 2.49980 2.7 85 FIGURE 3. VOUT vs TEMP - 3 UNITS 3.4 4.1 VIN (V) ΔVIN = +0.3V NORMALIZED TO VIN = 3V -40°C +25°C 100 +85°C 50 0 100mV/DIV DELTA VOUT (V) (µV) 5.5 FIGURE 4. LINE REGULATION - 3 UNITS 200 150 4.8 ΔVIN = -0.3V -50 -100 2.7 3.4 4.1 VIN 4.8 FIGURE 5. LINE REGULATION - 3 TEMPS 4 5.5 1ms/DIV FIGURE 6. LINE TRANSIENT RESPONSE, CL = 0nF FN8087.3 April 21, 2006 ISL60007 Typical Performance Curves, 2.5V Reference VIN = 3.0V, IOUT = 0mA, TA = 25°C Unless Otherwise Specified (Continued) 0 ΔVIN = +0.3V NO LOAD -10 1nF LOAD -20 100mV/DIV PSRR (dB) -30 ΔVIN = -0.3V -40 100nF LOAD -50 10nF LOAD -60 -70 -80 -90 -100 1 10 100 1k 10k 100k 1M FREQUENCY (Hz) 1ms/DIV FIGURE 7. LINE TRANSIENT RESPONSE, CL = 1nF FIGURE 8. PSRR vs f vs CL 0.30 IL= +50µA +85°C 0.10 +25°C 50mV/DIV DELTA VOUT (mV) 0.20 -40°C 0.00 -0.10 -0.20 IL= -50µA -0.30 -7 -6 -5 -4 SINKING -3 -2 -1 0 1 2 3 4 5 6 7 SOURCING 100µs/DIV OUTPUT CURRENT FIGURE 9. LOAD REGULATION vs TEMP FIGURE 10. LOAD TRANSIENT RESPONSE @ IL=50µA, CL=1nF 3.5 3 IL= +7mA VIN 200mV/DIV VIN & VOUT (V) 2.5 VOUT 2 1.5 1 0.5 IL= -7mA 0 0 500µs/DIV FIGURE 11. LOAD TRANSIENT RESPONSE @ IL=7mA, CL=1nF 5 2 4 6 8 10 12 TIME (ms) FIGURE 12. TURN-ON TIME @ TA = 25°C FN8087.3 April 21, 2006 ISL60007 Typical Performance Curves, 2.5V Reference VIN = 3.0V, IOUT = 0mA, TA = 25°C Unless Otherwise Specified (Continued) 140 1nF LOAD 120 100nF LOAD 100 NO LOAD 10µV/DIV ZOUT (Ω) 10nF LOAD 80 60 40 20 0 1 10 100 1k 10k 100k 10s/DIV FREQUENCY (Hz) FIGURE 14. VOUT NOISE FIGURE 13. ZOUT vs f vs CL Applications Information FGA Technology The ISL60007 series of voltage references use the floating gate technology to create references with very low drift and supply current. Essentially the charge stored on a floating gate cell is set precisely in manufacturing. The reference voltage output itself is a buffered version of the floating gate voltage. The resulting reference device has excellent characteristics which are unique in the industry: very low temperature drift, high initial accuracy, and almost zero supply current. Also, the reference voltage itself is not limited by voltage bandgaps or zener settings, so a wide range of reference voltages can be programmed (standard voltage settings are provided, but customer-specific voltages are available). The process used for these reference devices is a floating gate CMOS process, and the amplifier circuitry uses CMOS transistors for amplifier and output transistor circuitry. While providing excellent accuracy, there are limitations in output noise level and load regulation due to the MOS device characteristics. These limitations are addressed with circuit techniques discussed in other sections. Nanopower Operation circuits using battery power will benefit greatly from having an accurate, stable reference which essentially presents no load to the battery. In particular, battery powered data converter circuits that would normally require the entire circuit to be disabled when not in use can remain powered up between conversions as shown in Figure 15. Data acquisition circuits providing 12 to 24 bits of accuracy can operate with the reference device continuously biased with no power penalty, providing the highest accuracy and lowest possible long term drift. Other reference devices consuming higher supply currents will need to be disabled in between conversions to conserve battery capacity. Absolute accuracy will suffer as the device is biased and requires time to settle to its final value, or, may not actually settle to a final value as power on time may be short. VIN = +3.0V 10µF VIN 0.01µF VOUT ISL60007 GND 0.001µF-0.01µF Reference devices achieve their highest accuracy when powered up continuously, and after initial stabilization has taken place. This drift can be eliminated by leaving the power on continuously. The ISL60007 is the first high precision voltage reference with ultra low power consumption that makes it possible to leave power on continuously in battery operated circuits. The ISL60007 consumes extremely low supply current due to the proprietary FGA technology. Supply current at room temperature is typically 400nA which is 1 to 2 orders of magnitude lower than competitive devices. Application 6 REF IN SERIAL BUS ENABLE SCK SDAT 12 TO 24-BIT A/D CONVERTER FIGURE 15. FN8087.3 April 21, 2006 ISL60007 Board Mounting Considerations For applications requiring the highest accuracy, board mounting location should be reviewed. Placing the device in areas subject to slight twisting can cause degradation of the accuracy of the reference voltage due to die stresses. It is normally best to place the device near the edge of a board, or the shortest side, as the axis of bending is most limited at that location. Obviously mounting the device on flexprint or extremely thin PC material will likewise cause loss of reference accuracy. VIN = 3.0V VIN 10µF VO 0.1µF ISL60007 GND 10µF Noise Performance and Reduction FIGURE 17. Turn-On Time The ISL60007 devices operate with ultra-low supply current and thus the time to bias up internal circuitry to final values will be longer than with references that require higher current. Normal turn-on time is typically 4ms. This is shown in Figure 18. Since devices can vary in supply current down to 250nA, turn-on time can last up to about 6ms. Care should be taken in system design to include this delay before measurements or conversions are started. 3.5 VIN 3 VIN AND VOUT (V) The output noise voltage in a 0.1Hz to 10Hz bandwidth is typically 30µVP-P. This is shown in the plot in the Typical Performance Curves. The noise measurement is made with a bandpass filter made of a 1 pole high-pass filter with a corner frequency at 0.1Hz and a 2-pole low-pass filter with a corner frequency at 12.6Hz to create a filter with a 9.9Hz bandwidth. Noise in the 10kHz to 1MHz bandwidth is approximately 400µVP-P with no capacitance on the output, as shown in Figure 16. These noise measurements are made with a 2 decade bandpass filter made of a 1 pole highpass filter with a corner frequency at 1/10 of the center frequency and 1-pole low-pass filter with a corner frequency at 10 times the center frequency. Figure 16 also shows the noise in the 10kHz to 1MHz band can be reduced to about 50µVP-P using a 0.001µF capacitor on the output. Noise in the 1kHz to 100kHz band can be further reduced using a 0.1µF capacitor on the output, but noise in the 1Hz to 100Hz band increases due to instability of the very low power amplifier with a 0.1µF capacitance load. For load capacitances above 0.001µF the noise reduction network shown in Figure 17 is recommended. This network reduces noise significantly over the full bandwidth. As shown in Figure 16, noise is reduced to less than 40µVP-P from 1Hz to 1MHz using this network with a 0.01µF capacitor and a 2kΩ resistor in series with a 10µF capacitor. 2kΩ 0.01µF 400nA 2.5 570nA 2 250nA 1.5 1 0.5 0 0 2 4 6 8 10 12 TIME (ms) 400 FIGURE 18. TURN-ON TIME (+25°C) NOISE VOLTAGE (µVP-P) 350 Temperature Coefficient 300 CL = 0 CL = 0.01µF & 10µF + 2kΩ 250 200 CL = 0.1µF 150 CL= 0.001µF 100 50 0 1 10 100 1000 10000 100000 The limits stated for temperature coefficient (tempco) are governed by the method of measurement. The overwhelming standard for specifying the temperature drift of a reference is to measure the reference voltage at two temperatures, take the total variation, (VHIGH - VLOW), and divide by the temperature extremes of measurement (THIGH - TLOW). The result is divided by the nominal reference voltage (at T = 25°C) and multiplied by 106 to yield ppm/°C. This is the “Box” method for specifying temperature coefficient. FIGURE 16. NOISE REDUCTION 7 FN8087.3 April 21, 2006 ISL60007 Typical Application Circuits VIN = 5V R = 200Ω 2N2905 VIN ISL60007 VOUT 2.5V/50mA 0.001µF GND FIGURE 19. PRECISION 2.5V, 50mA REFERENCE VIN = 3.0V 0.1µF 10µF VIN ISL60007 VOUT 2.5V 0.001µF GND VIN ISL60007 VOUT R1 = 2.5V-|VIN| -(IOUT) ; IOUT ≤ 7mA 0.001µF GND R1 -VIN = -3.0V -2.5V FIGURE 20. ±2.5V DUAL OUTPUT, HIGH ACCURACY REFERENCE VIN = 3.0V 0.1µF 10µF VIN VOUT ISL60007 + EL8178 – VOUT SENSE LOAD GND FIGURE 21. KELVIN SENSED LOAD 8 FN8087.3 April 21, 2006 ISL60007 Typical Application Circuits (Continued) ISL60007 VOUT VIN GND CIN 0.001 COUT = 0.001µF -2.5V R1 LIMITS MAX LOAD CURRENT with R1 = 200Ω; ILOAD MAX = 2.5mA R1 = 200Ω R1 = 2.5V-|VIN| -3.0V -(IOUT) ; IOUT ≤ 7mA FIGURE 22. NEGATIVE VOLTAGE REFERENCE 2.7-5.5V 0.1µF 10µF VIN VOUT ISL60007 GND 0.001µF VCC RH VOUT X9119 + SDA 2-WIRE BUS EL8178 SCL VSS – VOUT (BUFFERED) RL FIGURE 23. 2.5V FULL SCALE LOW-DRIFT 10-BIT ADJUSTABLE VOLTAGE SOURCE 9 FN8087.3 April 21, 2006 ISL60007 Small Outline Package Family (SO) A D h X 45° (N/2)+1 N A PIN #1 I.D. MARK E1 E c SEE DETAIL “X” 1 (N/2) B L1 0.010 M C A B e H C A2 GAUGE PLANE SEATING PLANE A1 0.004 C 0.010 M C A B L b 0.010 4° ±4° DETAIL X MDP0027 SMALL OUTLINE PACKAGE FAMILY (SO) SYMBOL SO-8 SO-14 SO16 (0.150”) SO16 (0.300”) (SOL-16) SO20 (SOL-20) SO24 (SOL-24) SO28 (SOL-28) TOLERANCE NOTES A 0.068 0.068 0.068 0.104 0.104 0.104 0.104 MAX - A1 0.006 0.006 0.006 0.007 0.007 0.007 0.007 ±0.003 - A2 0.057 0.057 0.057 0.092 0.092 0.092 0.092 ±0.002 - b 0.017 0.017 0.017 0.017 0.017 0.017 0.017 ±0.003 - c 0.009 0.009 0.009 0.011 0.011 0.011 0.011 ±0.001 - D 0.193 0.341 0.390 0.406 0.504 0.606 0.704 ±0.004 1, 3 E 0.236 0.236 0.236 0.406 0.406 0.406 0.406 ±0.008 - E1 0.154 0.154 0.154 0.295 0.295 0.295 0.295 ±0.004 2, 3 e 0.050 0.050 0.050 0.050 0.050 0.050 0.050 Basic - L 0.025 0.025 0.025 0.030 0.030 0.030 0.030 ±0.009 - L1 0.041 0.041 0.041 0.056 0.056 0.056 0.056 Basic - h 0.013 0.013 0.013 0.020 0.020 0.020 0.020 Reference - 16 20 24 28 Reference N 8 14 16 Rev. L 2/01 NOTES: 1. Plastic or metal protrusions of 0.006” maximum per side are not included. 2. Plastic interlead protrusions of 0.010” maximum per side are not included. 3. Dimensions “D” and “E1” are measured at Datum Plane “H”. 4. Dimensioning and tolerancing per ASME Y14.5M-1994 All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems. Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see www.intersil.com 10 FN8087.3 April 21, 2006