CEL NE851M13-T3-A Npn silicon transistor Datasheet

NEC's NPN SILICON TRANSISTOR NE851M13
OUTLINE DIMENSIONS (Units in mm)
FEATURES
PACKAGE OUTLINE M13
2
1
(Bottom View)
0.5+0.1
ñ0.05
0.3
3
0.2+0.1
ñ0.05
LOW PUSHING FACTOR
0.35
•
0.7
LOW PHASE NOISE
1.0+0.1
ñ0.05
IDEAL FOR ≤ 3 GHz OSCILLATORS
•
0.7±0.05
E7
•
0.15+0.1
ñ0.05
NEW MINIATURE M13 PACKAGE:
– Small transistor outline
– 1.0 X 0.5 X 0.5 mm
– Low profile / 0.50 mm package height
– Flat lead style for better RF performance
0.35
•
0.1
0.125+0.1
ñ0.05
0.1
0.5±0.05
NEC's NE851M13 transistor is designed for oscillator applications up to 3 GHz. The NE851M13 features low voltage
operation, low phase noise, and high immunty to pushing
effects. NEC's new low profile/flat lead style "M13" package is
ideal for today's portable wireless applications.
0.15+0.1
ñ0.05
DESCRIPTION
0.2
0.2
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
EIAJ1 REGISTERED NUMBER
PACKAGE OUTLINE
SYMBOLS
UNITS
MIN
TYP
MAX
GHz
GHz
3.0
5.0
4.5
6.5
–
Insertion Power Gain at VCE = 1 V, IC = 5 mA, f = 2 GHz
Insertion Power Gain at VCE = 1 V, IC = 15 mA, f = 2 GHz
dB
dB
3.0
4.5
4.0
5.5
–
–
NF
Noise Figure at VCE = 1 V, IC = 10 mA, f = 2 GHz
dB
–
1.9
2.5
Capacitance3
fT
fT
|S21E|2
|S21E|2
PARAMETERS AND CONDITIONS
NE851M13
2SC5801
M13
Gain Bandwidth at VCE = 1 V, IC = 5 mA, f = 2 GHz
Gain Bandwidth at VCE = 1 V, IC = 15 mA, f = 2 GHz
CRE
Reverse Transfer
pF
–
0.6
0.8
ICBO
Collector Cutoff Current at VCB = 5 V, IE = 0
at VCB = 0.5 V, IE = 0 mA, f = 1 MHz
nA
–
–
600
IEBO
Emitter Cutoff Current at VEB = 1 V, IC = 0
nA
hFE
DC Current Gain2 at VCE = 1 V, IC = 5 mA
–
–
600
100
120
145
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.
3. Collector to base capacitance when the emitter is grounded
California Eastern Laboratories
NE851M13
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS
PARAMETERS
UNITS
PART NUMBER
QUANTITY
NE851M13-T3-A
10 k pcs./reel
VCBO
Collector to Base Voltage
V
9
VCEO
Collector to Emitter Voltage
V
5.5
VEBO
Emitter to Base Voltage
V
1.5
Collector Current
mA
100
PT2
Total Power Dissipation
mW
140
TJ
Junction Temperature
°C
150
TSTG
Storage Temperature
°C
-65 to +150
IC
ORDERING INFORMATION
RATINGS
Notes:
1. Operation in excess of any one of these parameters may result
in permanent damage.
2. With device mounted on 1.08 cm2 X 1.0 mm glass epoxy board.
TYPICAL PERFORMANCE CURVES (TA = 25°C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
Reverse Transfer Capacitance, Cre (pF)
Total Power Dissipation, Ptot (mW)
160
REVERSE TRANSFR CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
Mounted on Glass Epoxy PCB
(1.08 cm2 • 1.0mm(t) )
140
120
100
80
60
40
20
0
25
50
75
100
125
1.0
f = 1 MHz
0.8
0.6
0.4
0.2
0
150
1
2
3
4
5
6
7
8
9
Collector to Base Voltage, VCB (V)
Ambient Temperature, TA (°C)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
100
60
Collector Current, IC (mA)
Collector Current, IC (mA)
VCE = 2 V
80
60
40
20
0
400 µ A
50
360 µ A
320 µ A
40
280 µ A
240 µ A
30
200 µ A
160 µ A
20
120 µ A
80 µ A
10
IB = 40 µA
0.2
0.4
0.6
0.8
Base to Emitter Voltage, VBE (V)
1.0
0
1
2
3
4
5
6
Collector to Emitter Voltage, VCE (V)
7
NE851M13
TYPICAL PERFORMANCE CURVES (TA = 25°C)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
10
VCE = 1 V
f = 2 GHz
Gain Bandwidth Product, fT (GHz)
Gain Bandwidth Product, fT (GHz)
10
8
6
4
2
10
6
4
2
100
Collector Current, IC (mA)
INSERTION POWER GAIN vs.
FREQUENCY
INSERTION POWER GAIN vs.
FREQUENCY
35
VCE = 1 V
IC = 5 mA
30
25
20
15
10
5
VCE = 2 V
IC = 5 mA
30
25
20
15
10
5
0
0.1
10
1
1
10
Frequency, f (GHz)
Frequency, f (GHz)
INSERTION POWER GAIN vs.
FREQUENCY
INSERTION POWER GAIN vs.
FREQUENCY
35
35
Insertion Power Gain, |S21e|2 (dB)
VCE = 1 V
IC = 15 mA
30
25
20
15
10
5
0
0.1
10
Collector Current, IC (mA)
35
0
0.1
1
100
Insertion Power Gain, |S21e|2 (dB)
1
Insertion Power Gain, |S21e|2 (dB)
f = 2 GHz
8
0
0
Insertion Power Gain, |S21e|2 (dB)
VCE = 2 V
1
Frequency, f (GHz)
10
VCE = 2 V
IC = 15 mA
30
25
20
15
10
5
0
0.1
1
Frequency, f (GHz)
10
NE851M13
TYPICAL PERFORMANCE CURVES (TA = 25°C)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
INSERTION POWER GAIN, MAG,
MSG vs. COLLECTOR CURRENT
20
MAG
15
2
|S21e|
10
5
VCE = 1 V
f = 1 GHz
0
1
15
Insertion Power Gain, |S21e|2 (dB)
Maximum Available Gain, MAG(dB)
Insertion Power Gain, |S21e|2 (dB)
Maximum Available Gain, MAG(dB)
Maximum Stable Gain, MSG(dB)
MSG
10
15
|S21e|2
10
5
100
VCE = 2 V
f = 1 GHz
1
10
100
Collector Current, IC (mA)
Collector Current, IC (mA)
INSERTION POWER GAIN and MAG
vs. COLLECTOR CURRENT
INSERTION POWER GAIN and MAG
vs. COLLECTOR CURRENT
15
VCE = 1 V
f = 2 GHz
MAG
10
2
|S21e|
5
0
1
10
100
VCE = 2 V
f = 2 GHz
10
MAG
5
|S21e|2
0
-5
-5
1
10
100
Collector Current, IC (mA)
Collector Current, IC (mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
10
10
VCE = 1 V
f = 4 GHz
Insertion Power Gain, |S21e|2 (dB)
Maximum Available Gain, MAG(dB)
Maximum Stable Gain, MSG(dB)
Insertion Power Gain, |S21e|2 (dB)
Maximum Available Gain, MAG(dB)
Maximum Stable Gain, MSG(dB)
MAG
MSG
0
Insertion Power Gain, |S21e|2 (dB)
Maximum Available Gain, MAG(dB)
Insertion Power Gain, |S21e|2 (dB)
Maximum Available Gain, MAG(dB)
Maximum Stable Gain, MSG(dB)
20
MAG
MSG
5
0
2
|S21e|
-5
VCE = 2 V
f = 4 GHz
MSG
MAG
5
0
2
|S21e|
-5
-10
-10
1
10
Collector Current, IC (mA)
100
1
10
Collector Current, IC (mA)
100
NE851M13
TYPICAL PERFORMANCE CURVES (TA = 25°C)
NOISE FIGURE and ASSOCIATED GAIN
vs. COLLECTOR CURRENT
18
6
VCE = 1 V
f = 1 GHz
4
12
3
9
2
6
NF
1
0
1
10
5
Noise Figure, NF (dB)
4
12
3
9
2
6
3
1
0
100
0
1
6
NOISE FIGURE and ASSOCIATED GAIN
vs. COLLECTOR CURRENT
18
6
18
4
12
Ga
9
3
6
2
NF
1
0
1
10
5
15
4
12
Ga
3
9
2
3
1
0
100
0
6
NF
3
1
0
100
10
Collector Current, IC (mA)
Collector Current, IC (mA)
OUTPUT POWER AND
COLLECTOR CURRENT vs.
INPUT POWER
OUTPUT POWER AND
COLLECTOR CURRENT vs.
INPUT POWER
15
80
25
70
20
60
10
50
Pout
5
40
0
30
20
-5
IC
10
-10
Output Power, POUT (dBm)
VCE = 2 V, f = 1 GHz
Icq = 5 mA (RF OFF)
80
VCE = 2 V, f = 2 GHz
Icq = 5 mA (RF OFF)
70
15
60
10
50
5
40
Pout
0
30
-5
20
-10
10
IC
-15
-20
0
-15
-10
-5
0
Input Power, PIN (dBm)
5
10
Associated Gain, Ga (dB)
15
Noise Figure, NF (dB)
5
Associated Gain, Ga (dB)
VCE = 2 V
f = 2 GHz
Collector Current, IC (mA)
Noise Figure, NF (dB)
VCE = 1 V
f = 2 GHz
Output Power, POUT (dBm)
0
100
10
Collector Current, IC (mA)
NOISE FIGURE and ASSOCIATED GAIN
vs. COLLECTOR CURRENT
20
3
NF
Collector Current, IC (mA)
25
15
Ga
-15
-20
-15
-10
-5
0
Input Power, PIN (dBm)
5
10
0
Collector Current, IC (mA)
Noise Figure, NF (dB)
Ga
Associated Gain, Ga (dB)
15
5
19
VCE = 2 V
f = 1 GHz
Associated Gain, Ga (dB)
6
NOISE FIGURE and ASSOCIATED GAIN
vs. COLLECTOR CURRENT
NE851M13
TYPICAL SCATTERING PARAMETERS (TA = 25°C)
j50
+90˚
j100
j25
+135˚
+45˚
S 11
j10
0
S12
S21
10
25
100
50
2
+180˚
0
4
6
8
1
0˚
2
S2
-j10
-135˚
-45˚
-j100
-j25
-j50
-90˚
0.100 to 4.000 GHz by 0.050
0.100 to 4.000GHz by 0.050
NE851M13
VC = 1 V, IC = 5 mA
FREQUENCY
S11
S21
S12
S22
GHz
MAG
ANG
MAG
ANG
MAG
ANG
MAG
0.100
0.200
0.300
0.400
0.500
0.600
0.700
0.800
0.900
1.000
1.500
2.000
2.500
3.000
3.500
4.000
0.831
0.789
0.765
0.750
0.706
0.699
0.697
0.696
0.697
0.697
0.704
0.712
0.724
0.732
0.743
0.746
-46.49
-81.92
-106.07
-122.16
-133.99
-142.06
-148.74
-153.88
-158.33
-161.97
-174.56
176.89
169.88
163.33
156.42
150.06
13.764
11.335
9.135
7.476
6.157
5.251
4.576
4.062
3.646
3.308
2.262
1.721
1.391
1.166
1.002
0.879
152.54
132.55
118.99
109.52
103.05
97.76
93.13
89.34
85.83
82.71
69.58
59.12
50.09
42.52
36.21
31.47
0.036
0.058
0.069
0.075
0.077
0.078
0.080
0.081
0.082
0.082
0.087
0.098
0.118
0.147
0.182
0.222
66.4
50.3
40.9
35.5
33.0
31.6
31.0
31.4
32.0
33.1
41.9
53.1
62.5
68.6
71.3
71.8
0.901
0.742
0.618
0.533
0.460
0.414
0.382
0.363
0.350
0.339
0.328
0.342
0.376
0.415
0.458
0.498
K
MAG1
0.068
0.134
0.192
0.250
0.394
0.478
0.551
0.619
0.682
0.751
1.012
1.152
1.122
1.042
0.939
0.877
25.83
22.93
21.23
20.01
19.04
18.26
17.59
17.02
16.51
16.05
13.47
10.09
8.58
7.75
7.41
5.98
ANG
-23.1
-38.6
-47.8
-53.5
-53.3
-55.7
-58.2
-59.5
-61.5
-63.3
-74.5
-86.9
-98.8
-109.4
-117.8
-125.3
(dB)
Note:
1. Gain Calculations:
MAG =
|S21|
|S12|
(K ±
K 2- 1
). When K ≤ 1, MAG is undefined and MSG values are used. MSG =
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
2
2
2
|S21|
, K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12
|S12|
2 |S12 S21|
NE851M13
TYPICAL SCATTERING PARAMETERS (TA = 25°C)
j50
+90˚
j100
j25
S21
S12
+135˚
S11
j10
0
+45˚
10
25
100
50
0
2
+180˚
4
6
8
1
0˚
2
S2
-j10
-135˚
-j100
-j25
-45˚
-j50
-90˚
0.100 to 4.000GHz by 0.050
0.100 to 4.000GHz by 0.050
NE851M13
VC = 2 V, IC = 10 mA
FREQUENCY
GHz
0.100
0.200
0.300
0.400
0.500
0.600
0.700
0.800
0.900
1.000
1.500
2.000
2.500
3.000
3.500
4.000
S11
MAG
0.718
0.689
0.680
0.677
0.648
0.645
0.647
0.648
0.651
0.652
0.661
0.669
0.679
0.687
0.696
0.699
S21
ANG
-62.67
-102.19
-124.30
-137.54
-147.55
-153.87
-158.99
-162.97
-166.43
-169.32
-179.34
173.47
167.37
161.58
155.30
149.56
MAG
22.758
16.867
12.737
10.068
8.180
6.913
5.980
5.282
4.725
4.275
2.907
2.212
1.795
1.515
1.313
1.161
S12
ANG
144.89
123.83
111.69
103.82
98.85
94.59
90.88
87.80
84.93
82.38
71.36
62.32
54.17
47.00
40.58
35.18
MAG
0.029
0.042
0.048
0.052
0.055
0.057
0.060
0.063
0.066
0.069
0.087
0.109
0.135
0.164
0.197
0.232
S22
ANG
61.8
47.7
42.0
40.1
40.8
41.9
43.5
45.4
47.2
49.2
57.6
63.9
67.6
69.6
70.1
69.6
MAG
0.823
0.615
0.486
0.408
0.335
0.296
0.270
0.253
0.243
0.234
0.226
0.241
0.274
0.311
0.353
0.393
ANG
-32.5
-50.6
-60.3
-66.1
-65.2
-67.9
-70.9
-72.1
-74.0
-75.8
-86.3
-97.3
-107.0
-115.5
-121.7
-127.3
K
MAG1
0.135
0.239
0.334
0.423
0.582
0.679
0.755
0.819
0.871
0.922
1.059
1.097
1.061
1.013
0.947
0.901
(dB)
28.99
26.05
24.22
22.85
21.74
20.81
19.98
19.23
18.55
17.92
13.75
11.18
9.73
8.96
8.24
6.99
Note:
1. Gain Calculations:
MAG =
|S21|
|S12|
(K ±
K 2- 1
). When K ≤ 1, MAG is undefined and MSG values are used. MSG =
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
2
2
2
|S21|
, K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12
|S12|
2 |S12 S21|
NE851M13
TYPICAL SCATTERING PARAMETERS (TA = 25°C)
j50
+90˚
j100
j25
S21
S12
+135˚
S11
j10
0
+45˚
10
25
100
50
0
2
+180˚
4
6
8
1
0˚
2
S2
-j10
-135˚
-j100
-j25
-45˚
-j50
-90˚
0.100 to 4.000GHz by 0.050
0.100 to 4.000GHz by 0.050
NE851M13
VC = 3 V, IC = 20 mA
FREQUENCY
S11
S21
GHz
MAG
ANG
MAG
0.100
0.200
0.300
0.400
0.500
0.600
0.700
0.800
0.900
1.000
1.500
2.000
2.500
3.000
3.500
4.000
0.592
0.610
0.620
0.626
0.610
0.610
0.613
0.615
0.620
0.621
0.632
0.639
0.648
0.654
0.662
0.664
-86.11
-124.37
-141.71
-151.34
-159.31
-163.96
-167.68
-170.58
-173.15
-175.39
176.71
170.54
165.15
159.90
154.05
148.76
33.025
21.656
15.554
12.032
9.710
8.162
7.032
6.194
5.529
4.996
3.387
2.578
2.096
1.775
1.546
1.376
S12
S22
ANG
MAG
ANG
MAG
135.40
115.31
105.23
98.91
95.19
91.77
88.75
86.21
83.82
81.67
72.14
64.13
56.72
50.03
43.87
38.44
0.022
0.031
0.036
0.040
0.044
0.048
0.052
0.057
0.062
0.067
0.092
0.119
0.148
0.178
0.210
0.243
57.5
48.3
47.6
49.1
52.1
54.4
56.5
58.6
60.3
61.8
66.6
69.0
69.7
69.5
68.7
67.5
0.710
0.483
0.370
0.309
0.241
0.212
0.194
0.181
0.173
0.167
0.166
0.183
0.214
0.248
0.285
0.321
K
MAG1
0.243
0.402
0.532
0.635
0.781
0.862
0.917
0.956
0.983
1.010
1.059
1.064
1.035
1.005
0.963
0.929
31.86
28.50
26.41
24.80
23.47
22.32
21.29
20.36
19.53
18.15
14.16
11.79
10.35
9.56
8.68
7.54
ANG
-44.7
-65.2
-75.9
-82.6
-83.3
-87.6
-92.2
-94.3
-96.9
-99.4
-109.9
-118.5
-124.5
-129.5
-132.5
-135.5
(dB)
Note:
1. Gain Calculations:
MAG =
|S21|
|S12|
(K ±
K 2- 1
). When K ≤ 1, MAG is undefined and MSG values are used. MSG =
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
2
2
2
|S21|
, K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12
|S12|
2 |S12 S21|
NE851M13
NONLINEAR MODEL
SCHEMATIC
CCBPKG
0.05 pF
CCB
0.01 pF
LBPKG
LB
0.05 nH
0.25 nH
Base
LCPKG
0.05 nH
Collector
CCE
Q1
0.25 pF
LE
0.45 nH
CCEPKG
0.05 pF
LEPKG
0.05 nH
Emitter
BJT NONLINEAR MODEL PARAMETERS(1)
Parameters
Q1
Parameters
Q1
IS
137e-18
MJC
0.14
BF
166
XCJC
0.5
NF
0.9871
CJS
0
VAF
20.4
VJS
0.75
IKF
50
MJS
0
ISE
80.4e-15
FC
0.55
NE
2.4
TF
15e-12
0.1
BR
28.7
XTF
NR
0.9889
VTF
2
VAR
2.7
ITF
0.03
IKR
0.021
PTF
0
ISC
532e-18
TR
1.0e-9
NC
1.28
EG
1.11
RE
0.45
XTB
0
RB
4
XTI
3
RBM
1
KF
170e-15
IRB
0
AF
1.65
RC
1.7
CJE
2.4e-12
VJE
0.87
MJE
0.34
CJC
0.65e-12
VJC
0.52
ADDITIONAL PARAMETERS
Parameters
CCB
CCE
LB
LE
CCBPKG
CCEPKG
LBX
LCX
LEX
NE851M13
0.01 pF
0.25 pF
0.25 nH
0.45 nH
0.05 pF
0.05 pF
0.05 nH
0.05 nH
0.05 nH
MODEL TEST CONDITIONS
Frequency: 0.1 to 5.0 GHz
Bias:
VCE = 1 V to 4 V, IC = 1 mA to 40 mA
Date:
09/2001
(1) Gummel-Poon Model
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably
be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and
agree to fully indemnify CEL for all damages resulting from such improper use or sale.
01/27/2003
A Business Partner of NEC Compound Semiconductor Devices, Ltd.
4590 Patrick Henry Drive
Santa Clara, CA 95054-1817
Telephone: (408) 919-2500
Facsimile: (408) 988-0279
Subject: Compliance with EU Directives
CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant
with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous
Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive
2003/11/EC Restriction on Penta and Octa BDE.
CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates
that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are
exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals.
All devices with these suffixes meet the requirements of the RoHS directive.
This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that
go into its products as of the date of disclosure of this information.
Restricted Substance
per RoHS
Concentration Limit per RoHS
(values are not yet fixed)
Concentration contained
in CEL devices
-A
Not Detected
Lead (Pb)
< 1000 PPM
Mercury
< 1000 PPM
Not Detected
Cadmium
< 100 PPM
Not Detected
Hexavalent Chromium
< 1000 PPM
Not Detected
PBB
< 1000 PPM
Not Detected
PBDE
< 1000 PPM
Not Detected
-AZ
(*)
If you should have any additional questions regarding our devices and compliance to environmental
standards, please do not hesitate to contact your local representative.
Important Information and Disclaimer: Information provided by CEL on its website or in other communications concerting the substance
content of its products represents knowledge and belief as of the date that it is provided. CEL bases its knowledge and belief on information
provided by third parties and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better
integrate information from third parties. CEL has taken and continues to take reasonable steps to provide representative and accurate
information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. CEL and CEL
suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for
release.
In no event shall CEL’s liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to
customer on an annual basis.
See CEL Terms and Conditions for additional clarification of warranties and liability.