Jinan Jingheng MCLDC34 Silicon bidirectional diac Datasheet

MCLDB3/MCLDC34/MCLDB4/MCLDB6
SILICON BIDIRECTIONAL DIAC
S E M I C O N D U C T O R
FEATURES
DIAC
The three layer, two terminal, axial lead, hermetically sealed diacs are
Micro-MELF
designed specifically for triggering thyristors. They demonstrate low breakover
current at breakover voltage as they withstand peak pulse current, The breakover
symmetry is within three volts(DB3,DC34,DB4) or four volts(DB6). These diacs are
intended for use in thyrisitors phase control , circuits for lamp dimming, universal
motor speed control ,and heat control.
JF's DB3/DC34/DB4/DB6 are bi-directional trigged diode designed to operate
in conjunction with Triacs and SCR's
MECHANICAL DATA
Case: Micro-MELF glass case
Weight: Approx. 0.03 gram
Dimensions in inches and (millimeters)
ABSOLUTE RATINGS(LIMITING VALUES)
Value
Parameters
Symbols
Units
MCLDB3
PC
Power Dissipation on Printed
Circuit(L=10mm)
TA=50 C
ITRM
Repetitive Peak on-state
Current
tp=10ms
F=100Hz
TSTG/TJ
MCLDC34
MCLDB4
MCLDB6
mW
150
2.0
Storage and Operating Junction Temperature
2.0
2.0
A
16
C
-40 to+125/-40 to 110
ELECTRICAL CHARACTERISTICS
Value
Symbols
Parameters
Test Condition
MCLDB3 MCLDC34
MCLDB4
Units
MCLDB6
Breakover Voltage (Note 2 )
C=22nF(Note 2)
See diagram 1
Min
Typ
Max
Breakover Voltage Symmetry
C=22nF(Note 2)
See diagram 1
Max
+3
I=(IBO to IF=10mA)
See Diagram 1
Min
5
VO
Output Voltage (Note 1 )
See Diagram 2
Min
5
V
IBO
Breakover Current (Note1)
C=22nF(Note 2)
Max
100
mA
See Diagram 3
Typ
1.5
mS
VB=0.5 VBO max
see diagram 1
Max
10
mA
VBO
I +VBO II - VBO I
I + VI
Dynamic Breakover Voltage (Note1)
tr
IB
Rise Time (Note1)
Leakage Current (Note1)
28
32
36
35
40
45
30
34
38
56
60
70
V
+4
V
10
V
Notes: 1.Electrical characteristics applicable in both forward and reverse directions.
2.Connected in parallel with the devices.
3-6
JINAN JINGHENG CO., LTD.
NO.51 HEPING ROAD PR CHINA
TEL:86-531-6943657
FAX:86-531-6947096
WWW.JIFUSEMICON.COM
RATINGS AND CHARACTERISTIC CURVES
MCLDB3/MCLDC34/MCLDB4/MCLDB6
DIAGRAM 2: Test circuit for output voltage
DIAC
DIAGRAM 1: Current-voltage characteristics
+IF
10KW
500KW
220V
50Hz
10mA
D.U.T
R=20W
VO
0.1mF
DIAGRAM 3: Test circuit see diagram2 adjust R for
IP=0.5A
IBO
IB
0.5 VBO
-V
+V
IP
90%
V
VBO
10%
-IF
tr
FIG.1-Power dissipation versus ambient
temperature (maximum values)
FIG.2-Relative variation of VBO versus junction
temperature(typical values)
P (mW)
VBO(TJ)
VBO(TJ=25 C)
Tamb( C)
FIG.3-Peak pulse current versus pulse duration
(maximum values)
ITRM(A)
F=100Hz
TJ initial=25 C
tp(ms)
3-7
JINAN JINGHENG CO., LTD.
NO.51 HEPING ROAD PR CHINA
TEL:86-531-6943657
FAX:86-531-6947096
WWW.JIFUSEMICON.COM
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