JMNIC BFR30-31 N-channel field-effect transistor Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
BFR30; BFR31
N-channel field-effect transistors
Product specification
Supersedes data of April 1991
File under Discrete Semiconductors, SC07
1997 Dec 05
Philips Semiconductors
Product specification
N-channel field-effect transistors
BFR30; BFR31
DESCRIPTION
Planar epitaxial symmetrical junction N-channel
field-effect transistor in a plastic SOT23 package.
handbook, halfpage
3
d
g
s
APPLICATIONS
• Low level general purpose amplifiers in thick and
thin-film circuits.
1
Top view
PINNING - SOT23
PIN
SYMBOL
1
d
drain(1)
2
s
source(1)
3
g
gate
2
MAM385
Marking codes:
BFR30: M1p.
BFR31: M2p.
DESCRIPTION
Fig.1 Simplified outline and symbol.
Note
CAUTION
1. Drain and source are interchangeable.
This product is supplied in anti-static packing to prevent
damage caused by electrostatic discharge during
transport and handling. For further information, refer to
Philips specs.: SNW-EQ-608, SNW-FQ-302A and
SNW-FQ-302B.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
−
MAX.
±25
UNIT
VDS
drain-source voltage
VGSO
gate-source voltage
open drain
−
−25
V
Ptot
total power dissipation
Tamb ≤ 40 °C
−
250
mW
IDSS
drain current
VGS = 0; VDS = 10 V
BFR30
4
10
mA
BFR31
1
5
mA
BFR30
1
4
mS
BFR31
1.5
4.5
mS
yfs
common-source transfer admittance
1997 Dec 05
V
ID = 1 mA; VDS = 10 V; f = 1 kHz
2
Philips Semiconductors
Product specification
N-channel field-effect transistors
BFR30; BFR31
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage
−
±25
V
VDGO
drain-gate voltage
open source
−
−25
V
VGSO
gate-source voltage
open drain
−
−25
V
ID
drain current
−
10
mA
IG
forward gate current (DC)
−
5
mA
Ptot
total power dissipation
−
250
mW
Tstg
storage temperature
−65
+150
°C
Tj
operating junction temperature
−
150
°C
Tamb ≤ 40 °C; note 1; see Fig.2
Note
1. Mounted on a ceramic substrate of 8 × 10 × 0.7 mm.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
thermal resistance from junction to ambient
Rth j-a
note 1
Note
1. Mounted on a ceramic substrate of 8 × 10 × 0.7 mm.
MDA245
300
handbook, halfpage
Ptot
(mW)
200
100
0
0
40
80
120
200
160
Tamb (°C)
Fig.2 Power derating curve.
1997 Dec 05
3
VALUE
UNIT
430
K/W
Philips Semiconductors
Product specification
N-channel field-effect transistors
BFR30; BFR31
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
IGSS
gate cut-off current
VDS = 0; VGS = −10 V
IDSS
drain current
VGS = 0; VDS = 10 V
VGS
VGS
VGSoff
yfs
nA
BFR30
4
10
mA
BFR31
1
5
mA
BFR30
−0.7
−3
V
BFR31
0
−1.3
V
BFR30
−
−4
V
BFR31
−
−2
V
BFR30
−
−5
V
BFR31
−
−2.5
V
1
4
mS
1.5
4.5
mS
0.5
−
mS
0.75
−
mS
gate-source voltage
gate-source voltage
gate-source cut-off voltage
common-source transfer admittance
common-source transfer admittance
BFR30
ID = 1 mA; VDS = 10 V
ID = 50 µA; VDS = 10 V
ID = 0.5 nA; VDS = 10 V
ID = 1 mA; VDS = 10 V; f = 1 kHz;
Tamb = 25 °C
ID = 200 µA; VDS = 10 V; f = 1 kHz;
Tamb = 25 °C
BFR31
yos
Cis
Crs
Vn
common source output admittance
ID = 1 mA; VDS = 10 V; f = 1 kHz
BFR30
−
40
µS
BFR31
−
25
µS
BFR30
−
20
µS
BFR31
−
15
µS
ID = 1 mA
−
4
pF
ID = 0.2 nA
−
4
pF
ID = 1 mA
−
1.5
pF
ID = 200 µA
−
1.5
pF
−
0.5
µV
common source output admittance
input capacitance
feedback capacitance
equivalent input noise voltage
1997 Dec 05
UNIT
−0.2
BFR31
yos
MAX.
−
BFR30
yfs
MIN.
ID = 200 µA; VDS = 10 V; f = 1 kHz
VDS = 10 V; f = 1 MHz
VDS = 10 V; f = 1 MHz; Tamb = 25 °C
ID = 200 µA; VDS = 10 V;
B = 0.6 to 100 Hz
4
Philips Semiconductors
Product specification
N-channel field-effect transistors
BFR30; BFR31
MDA657
10
MDA658
10
ID
handbook, halfpage
handbook, halfpage
ID
(mA)
(mA)
8
8
max
6
6
4
4
VGS = 0 V
−0.5
−1.0
typ
2
2
−1.5
−2.0
min
0
−4
−3
−2
−1
0
0
0
2
4
6
8
VGS (V)
BFR30.
VDS = 10 V; Tj = 25 °C.
10
VDS (V)
BFR30.
Tj = 25 °C.
Fig.3 Input characteristics.
Fig.4 Output characteristics; typical values.
MDA659
5
ID
(mA)
MDA660
5
ID
(mA)
handbook, halfpage
handbook, halfpage
4
4
VGS = 0 V
max
3
3
2
2
−0.2
−0.4
typ
−0.6
1
0
−5
−1
−1.2
min
−4
−3
−2
−1
0
0
VGS (V)
0
BFR31.
VDS = 10 V; Tj = 25 °C.
2
4
6
8
10
VDS (V)
BFR31.
Tj = 25 °C.
Fig.5 Input characteristics.
1997 Dec 05
−0.8
1
Fig.6 Output characteristics; typical values.
5
Philips Semiconductors
Product specification
N-channel field-effect transistors
BFR30; BFR31
MDA661
6
MDA662
6
handbook, halfpage
handbook, halfpage
ID
(mA)
ID
(mA)
VGS = 0 V
4
4
VGS =
0V
−0.5
−0.2
−1.0
2
−0.4
2
−0.6
−1.5
−0.8
−1
−2.0
0
−1.2
0
25
50
75
100
Tj (°C)
125
25
BFR30.
VDS = 10 V.
Fig.7
50
75
100
Tj (°C)
125
BFR31.
VDS = 10 V.
Drain current as a function of junction
temperature; typical values.
Fig.8 Drain current as a function of junction
temperature; typical values.
MDA656
10
MDA663
−6
handbook, halfpage
handbook, halfpage
IGSS
(nA)
VGS(off)
(V)
1
−4
10−1
−2
10−2
BFR30
BFR31
10−3
0
50
100
150
Tj (°C)
0
200
0
2
4
6
8
10
IDSS (mA)
VGS = −10 V; VDS = 0.
ID = 0.5 nA; VDS = 10 V; VGS = 0; Tj = 25 °C.
Fig.9
Fig.10 Gate-source cut-off voltage as a function of
drain current; typical values.
Gate cut-off current as a function of junction
temperature; typical values.
1997 Dec 05
6
Philips Semiconductors
Product specification
N-channel field-effect transistors
BFR30; BFR31
MDA664
7.5
MDA665
75
handbook, halfpage
handbook, halfpage
yfs
(mA/V)
yos
(µA/V)
5
50
BFR31
BFR30
BFR30
BFR31
2.5
25
0
0
0
2
4
ID (mA)
6
0
VDS = 10 V; f = 1 kHz; Tamb = 25 °C.
2
4
ID (mA)
6
VDS = 10 V; f = 1 kHz; Tamb = 25 °C.
Fig.11 Common source transfer admittance as a
function of drain current; typical values.
Fig.12 Common source output admittance as a
function of drain current; typical values.
MDA666
104
handbook, halfpage
MDA667
5
handbook, halfpage
Cis
(pF)
4
|yos|
(µA/V)
103
3
2
102
(1)
1
(2)
10
0
BFR30
10
20
BFR31
30
VDS (V)
0
0
f = 1 kHz; Tamb = 25 °C.
(1) ID = 4 mA. (2) ID = 1 mA.
−2
−3
−4
−5
VGS (V)
VDS = 10 V; f = 1 MHz; Tamb = 25 °C.
Fig.13 Common source output admittance as a
function of drain-source voltage;
typical values.
1997 Dec 05
−1
Fig.14 Input capacitance as a function of
gate-source voltage; typical values.
7
Philips Semiconductors
Product specification
N-channel field-effect transistors
BFR30; BFR31
MDA668
−1
Crs
handbook, halfpage
(pF)
−0.8
−0.6
−0.4
−0.2
0
0
−1
−2
−3
−4
−5
VGS (V)
VDS = 10 V; f = 1 MHz; Tamb = 25 °C.
Fig.15 Feedback capacitance as a function of
gate-source voltage; typical values.
MDA669
104
handbook, full pagewidth
en
(nV/ Hz)
103
102
10
(1)
(2)
1
10
102
103
104
105
f (Hz)
VDS = 10 V; Tamb = 25 °C.
(1) BFR31; ID = 1 mA.
(2) BFR30; ID = 4 mA.
Fig.16 Equivalent noise voltage source as a function of frequency; typical values.
1997 Dec 05
8
106
Philips Semiconductors
Product specification
N-channel field-effect transistors
BFR30; BFR31
MDA670
104
handbook, full pagewidth
in
(fA/ Hz)
103
102
(1)
10
(2)
1
10
102
103
104
105
f (Hz)
VDS = 10 V; Tamb = 25 °C.
(1) BFR31; ID = 1 mA.
(2) BFR30; ID = 4 mA.
Fig.17 Equivalent noise current source as a function of frequency; typical values.
1997 Dec 05
9
106
Philips Semiconductors
Product specification
N-channel field-effect transistors
BFR30; BFR31
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT23
D
E
B
A
X
HE
v M A
3
Q
A
A1
1
2
e1
bp
c
w M B
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max.
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.9
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
1.9
0.95
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
97-02-28
SOT23
1997 Dec 05
EUROPEAN
PROJECTION
10
Philips Semiconductors
Product specification
N-channel field-effect transistors
BFR30; BFR31
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Dec 05
11
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© Philips Electronics N.V. 1997
SCA56
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Printed in The Netherlands
117067/00/02/pp12
Date of release: 1997 Dec 05
Document order number:
9397 750 03154
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