FDP51N25 / FDPF51N25 N-Channel UniFETTM MOSFET 250 V, 51 A, 60 mΩ Features Description • RDS(on) = 48 mΩ (Typ.) @ VGS = 10 V, ID = 25.5 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. • Low Gate Charge (Typ. 55 nC) • Low Crss (Typ. 63 pF) Applications • PDP TV • Lighting • Uninterruptible Power Supply • AC-DC Power Supply D D GD S TO-220 G G D S G TO-220F TO-220F Y-formed S S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol FDPF51N25 / FDPF51N25YDTU FDP51N25 Parameter Unit VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) 51 30 51* 30* A A IDM Drain Current - Pulsed 204 204* A VGSS Gate-Source voltage EAS Single Pulsed Avalanche Energy IAR Avalanche Current EAR Repetitive Avalanche Energy (Note 1) 32 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds 300 °C 250 (Note 1) (TC = 25°C) - Derate Above 25°C V ± 30 V (Note 2) 1111 mJ (Note 1) 51 A 320 3.7 38 0.3 W W/°C *Drain current limited by maximum junction temperature. Thermal Characteristics Symbol FDP51N25 Parameter FDPF51N25 / FDPF51N25YDTU Unit RθJC Thermal Resistance, Junction-to-Case, Max. 0.39 3.3 °C/W RθJA Thermal Resistance, Junction-to-Ambient, Max. 62.5 62.5 °C/W ©2008 Fairchild Semiconductor Corporation FDP51N25 / FDPF51N25 Rev. C1 1 www.fairchildsemi.com FDP51N25 / FDPF51N25 — N-Channel UniFETTM MOSFET November 2013 Part Number FDP51N25 Top Mark FDP51N25 FDPF51N25 FDPF51N25YDTU Package TO-220 Packing Method Tube Reel Size N/A Tape Width N/A Quantity 50 units FDPF51N25 TO-220F Tube N/A N/A 50 units FDPF51N25 TO-220F (Y-formed) Tube N/A N/A 50 units Electrical Characteristics Symbol TC = 25°C unless otherwise noted. Parameter Conditions Min. Typ. Max. Unit 250 -- -- V Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 μA, TJ = 25 °C ΔBVDSS / ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, Referenced to 25°C -- 0.25 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 250 V, VGS = 0 V VDS = 200 V, TC = 125°C --- --- 1 10 μA μA IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 μA 3.0 -- 5.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 25.5 A -- 0.048 0.060 Ω gFS Forward Transconductance VDS = 40 V, ID = 25.5 A -- 43 -- S VDS = 25 V, VGS = 0 V, f = 1 MHz -- 2620 3410 pF -- 530 690 pF -- 63 90 pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 125 V, ID = 51 A, VGS = 10 V, RG = 25 Ω (Note 4) VDS = 200 V, ID = 51 A, VGS = 10 V (Note 4) -- 62 135 ns -- 465 940 ns -- 98 205 ns -- 130 270 ns -- 55 70 nC -- 16 -- nC -- 27 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 51 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 204 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 51 A -- -- 1.4 V trr Reverse Recovery Time -- 178 -- ns Qrr Reverse Recovery Charge VGS = 0 V, IS = 51 A, dIF/dt =100 A/μs -- 4.0 -- μC Notes: 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. L = 0.68 mH, IAS = 51 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 51 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature typical characteristics. ©2008 Fairchild Semiconductor Corporation FDP51N25 / FDPF51N25 Rev. C1 2 www.fairchildsemi.com FDP51N25 / FDPF51N25 — N-Channel UniFETTM MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics VGS Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V ID, Drain Current [A] 2 10 ID, Drain Current [A] 2 10 1 10 o 150 C o 25 C 1 10 o -55 C * Notes : 1. VDS = 40V * Notes : 1. 250μs Pulse Test 2. 250μs Pulse Test o 2. TC = 25 C 0 10 0 -1 0 10 10 1 10 10 2 4 6 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 10 12 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 0.14 2 10 IDR, Reverse Drain Current [A] RDS(ON) [Ω], Drain-Source On-Resistance 8 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] 0.12 0.10 VGS = 10V 0.08 VGS = 20V 0.06 o 0.04 1 10 o 150 C o 25 C * Notes : 1. VGS = 0V 2. 250μs Pulse Test * Note : TJ = 25 C 0 0 25 50 75 100 125 10 150 0.2 0.4 ID, Drain Current [A] 0.6 0.8 1.0 1.2 1.4 1.6 1.8 VSD, Source-Drain voltage [V] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 12 6000 Ciss = Cgs + Cgd (Cds = shorted) 10 VGS, Gate-Source Voltage [V] Coss = Cds + Cgd Capacitances [pF] Crss = Cgd 4000 Coss Ciss 2000 * Note ; 1. VGS = 0 V Crss 2. f = 1 MHz VDS = 50V VDS = 125V VDS = 200V 8 6 4 2 * Note : ID = 51A 0 0 -1 10 0 10 1 10 10 20 30 40 50 60 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] ©2008 Fairchild Semiconductor Corporation FDP51N25 / FDPF51N25 Rev. C1 0 3 www.fairchildsemi.com FDP51N25 / FDPF51N25 — N-Channel UniFETTM MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 1.1 1.0 * Notes : 1. VGS = 0 V 0.9 2.5 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 2. ID = 250 μA 2.0 1.5 1.0 * Notes : 1. VGS = 10 V 0.5 2. ID = 25.5 A 0.8 -100 -50 0 50 100 150 0.0 -100 200 -50 0 o TJ, Junction Temperature [ C] 0 10 * Notes : o 1. TC = 25 C -1 10 10 μs 1 ms 10 ms 1 10 100 ms Operation in This Area is Limited by R DS(on) 0 10 DC * Notes : o 1. TC = 25 C -1 10 o 2. TJ = 150 C o 2. TJ = 150 C 3. Single Pulse 3. Single Pulse -2 10 200 100 μs 1 ms 10 ms 100 ms DC ID, Drain Current [A] ID, Drain Current [A] 2 10 100 μs Operation in This Area is Limited by R DS(on) 150 Figure 9-2. Maximum Safe Operating Area for FDPF51N25 / FDPF51N25YDTU 10 μs 2 10 1 100 o Figure 9-1. Maximum Safe Operating Area for FDP51N25 10 50 TJ, Junction Temperature [ C] -2 0 1 10 10 2 10 10 0 10 VDS, Drain-Source Voltage [V] 1 10 2 10 VDS, Drain-Source Voltage [V] Figure 10. Maximum Drain Current vs. Case Temperature 60 ID, Drain Current [A] 50 40 30 20 10 0 25 50 75 100 125 150 o TC, Case Temperature [ C] ©2008 Fairchild Semiconductor Corporation FDP51N25 / FDPF51N25 Rev. C1 4 www.fairchildsemi.com FDP51N25 / FDPF51N25 — N-Channel UniFETTM MOSFET Typical Performance Characteristics (Continued) D=0.5 10 -1 0.2 0.1 PDM 0.05 t1 0.02 10 -2 t2 * Notes : 0 1. Z θ JC (t) = 0.39 C/W Max. 0.01 θJC ZθJC Response [oC/W] Z (t),(t),Thermal Thermal Response Figure 11-1. Transient Thermal Response Curve for FDP51N25 2. Duty Factor, D=t1 /t 2 3. T JM - T C = P DM * Z θ JC (t) single pulse 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , Square W ave Pulse Duration [sec] (t), Thermal [oC/W] ZθJC (t), ThermalResponse Response θJC Figure 11-2. Transient Thermal Response Curve for FDPF51N25 / FDPF51N25YDTU D=0.5 0 10 0.2 0.1 PDM 0.05 t1 -1 10 0.02 t2 * Notes : 0 1. ZθJC(t) = 3.3 C/W Max. 0.01 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZθJC(t) single pulse -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 t1, Square Wave Pulse Duration [sec] ©2008 Fairchild Semiconductor Corporation FDP51N25 / FDPF51N25 Rev. C1 5 www.fairchildsemi.com FDP51N25 / FDPF51N25 — N-Channel UniFETTM MOSFET Typical Performance Characteristics (Continued) 50KΩ 200nF 12V FDP51N25 / FDPF51N25 — N-Channel UniFETTM MOSFET VGS Same Type as DUT Qg 10V 300nF VDS VGS Qgs Qgd DUT IG = const. 3mA Charge Figure 12. Gate Charge Test Circuit & Waveform VDS RG RL VDS 90% VDD VGS VGS DUT V 10V GS 10% td(on) tr td(off) t on tf t off Figure 13. Resistive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS BVDSS IAS ID RG V 10V GS GS VDD ID (t) VDS (t) VDD DUT tp tp Time Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms ©2008 Fairchild Semiconductor Corporation FDP51N25 / FDPF51N25 Rev. C1 6 www.fairchildsemi.com FDP51N25 / FDPF51N25 — N-Channel UniFETTM MOSFET DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms ©2008 Fairchild Semiconductor Corporation FDP51N25 / FDPF51N25 Rev. C1 7 www.fairchildsemi.com FDP51N25 / FDPF51N25 — N-Channel UniFETTM MOSFET Mechanical Dimensions Figure 16. TO-220, Molded, 3-Lead, Jedec Variation AB Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT220-003 ©2008 Fairchild Semiconductor Corporation FDP51N25 / FDPF51N25 Rev. C1 8 www.fairchildsemi.com FDP51N25 / FDPF51N25 — N-Channel UniFETTM MOSFET Mechanical Dimensions Figure 17. TO220, Molded, 3-Lead, Full Pack, EIAJ SC91, Straight Lead Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TF220-003 ©2008 Fairchild Semiconductor Corporation FDP51N25 / FDPF51N25 Rev. C1 9 www.fairchildsemi.com FDP51N25 / FDPF51N25 — N-Channel UniFETTM MOSFET Mechanical Dimensions Figure 18. TO220, Molded, 3-Lead, Full Pack, EIAJ SC91, Y-Formed Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TF220-FA3 ©2008 Fairchild Semiconductor Corporation FDP51N25 / FDPF51N25 Rev. C1 10 www.fairchildsemi.com tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. 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A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I66 ©2008 Fairchild Semiconductor Corporation FDP51N25 / FDPF51N25 Rev. C8 11 www.fairchildsemi.com FDP51N25 / FDPF51N25 — N-Channel UniFETTM MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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