DSK ERC04-02F Plastic silicon rectifier Datasheet

Diode Semiconductor Korea ERC04-02F---ERC04-04F
PLASTIC SILICON RECTIFIER
VOLTAGE RANGE: 200 --- 400 V
CURRENT: 1.5 A
FEATURES
Low cost
Diffused junction
Low leakage
Low forward voltage drop
DO - 15
High current capability
Easily cleaned with Freon,Alcohol,Isopropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
MECHANICAL DATA
Case:JEDEC DO--15,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Dimensions in millimeters
Weight: 0.014 ounces,0.39 grams
Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
ERC04
-02F
ERC04
-04F
UNITS
Maximum recurrent peak reverse voltage
VRRM
200
400
V
Maximum RMS voltage
VRMS
140
280
V
Maximum DC blocking voltage
VDC
200
400
V
Maximum average forw ard rectified current
9.5mm lead length,
@TA=75
IF(AV)
1.5
A
IFSM
100.0
A
VF
1.1
V
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
@TJ =125
Maximum instantaneous forw ard voltage
@ 1.5 A
Maximum reverse current
at rated DC blocking voltage
@TA=25
@TA =100
IR
5.0
Typical junction capacitance
(Note1)
CJ
20
Typical thermal resistance
(Note2)
RθJA
40
TJ
-55----+150
TSTG
-55----+150
Operating junction temperature range
Storage temperature range
A
50.0
pF
/W
NOTE: 1. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
2. Thermal resistance f rom junction to ambient.
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Diode Semiconductor Korea
ERC04-02F---ERC04-04F
FIG.2 -- JUNCTION CHARACTERISTICS
100
10
JUNCTION CAPACITANCE,pF
100
TJ=25
Pulse Width=300uS
4
2
1.0
0.4
AMPERES
INSTANTANEOUS FORWARD CURRENT
FIG.1 -- FORWARD CHARACTERISTIC
0.1
0 .04
60
40
20
10
4
TJ=25
f=1MHz
2
1
.1
.2
0.6
0.8
1.0
1.2
1.4
1.6
1.8
1.0
2
4
10
20
40
100
2.0
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
REVERSE VOLTAGE,VOLTS
1.50
1.25
1.00
AMPERES
.75
Single Phase
Half Wave 60H Z
Resistive or
Inductive Load
.50
025
0
25
50
75
100
125
150
AMBIENT TEMPERATURE,
175
FIG.4 --SURGE CAPABILITY
PEAK FORWARD SURGE CURRENT
AMPERES
FIG.3 -- CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT
.4
0.01
160
140
TJ=125
8.3ms Single Half
Sine-Wave
120
100
80
60
40
20
0
1
2
4
810
20
40
60 80
100
NUMBER OF CYCLES AT 60Hz
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