Diode Semiconductor Korea ERC04-02F---ERC04-04F PLASTIC SILICON RECTIFIER VOLTAGE RANGE: 200 --- 400 V CURRENT: 1.5 A FEATURES Low cost Diffused junction Low leakage Low forward voltage drop DO - 15 High current capability Easily cleaned with Freon,Alcohol,Isopropanol and similar solvents The plastic material carries U/L recognition 94V-0 MECHANICAL DATA Case:JEDEC DO--15,molded plastic Terminals: Axial lead ,solderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Dimensions in millimeters Weight: 0.014 ounces,0.39 grams Mounting position: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. ERC04 -02F ERC04 -04F UNITS Maximum recurrent peak reverse voltage VRRM 200 400 V Maximum RMS voltage VRMS 140 280 V Maximum DC blocking voltage VDC 200 400 V Maximum average forw ard rectified current 9.5mm lead length, @TA=75 IF(AV) 1.5 A IFSM 100.0 A VF 1.1 V Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @TJ =125 Maximum instantaneous forw ard voltage @ 1.5 A Maximum reverse current at rated DC blocking voltage @TA=25 @TA =100 IR 5.0 Typical junction capacitance (Note1) CJ 20 Typical thermal resistance (Note2) RθJA 40 TJ -55----+150 TSTG -55----+150 Operating junction temperature range Storage temperature range A 50.0 pF ／Ｗ NOTE: 1. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC. 2. Thermal resistance f rom junction to ambient. www.diode.kr Diode Semiconductor Korea ERC04-02F---ERC04-04F FIG.2 -- JUNCTION CHARACTERISTICS 100 10 JUNCTION CAPACITANCE,pF 100 TJ=25 Pulse Width=300uS 4 2 1.0 0.4 AMPERES INSTANTANEOUS FORWARD CURRENT FIG.1 -- FORWARD CHARACTERISTIC 0.1 0 .04 60 40 20 10 4 TJ=25 f=1MHz 2 1 .1 .2 0.6 0.8 1.0 1.2 1.4 1.6 1.8 1.0 2 4 10 20 40 100 2.0 INSTANTANEOUS FORWARD VOLTAGE,VOLTS REVERSE VOLTAGE,VOLTS 1.50 1.25 1.00 AMPERES .75 Single Phase Half Wave 60H Z Resistive or Inductive Load .50 025 0 25 50 75 100 125 150 AMBIENT TEMPERATURE, 175 FIG.4 --SURGE CAPABILITY PEAK FORWARD SURGE CURRENT AMPERES FIG.3 -- CURRENT DERATING CURVE AVERAGE FORWARD CURRENT .4 0.01 160 140 TJ=125 8.3ms Single Half Sine-Wave 120 100 80 60 40 20 0 1 2 4 810 20 40 60 80 100 NUMBER OF CYCLES AT 60Hz www.diode.kr