RF3928 RF3928280W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features Wideband Operation 2.8GHz to 3.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology RF IN VG Pin 1 (CUT ) RF OUT VD Pin 2 Supports Multiple Pulse Conditions GND BASE 10% to 20% Duty Cycle 100s to 500s Pulse Width Integrated Matching Components for High Terminal Impedances Functional Block Diagram 50V Operation Typical Performance Pulsed Output Power 280W Small Signal Gain 12dB Drain Efficiency 52% -40°C to 85°C Operating Temperature Applications Radar Air Traffic Control and Surveillance General Purpose Broadband Amplifiers Product Description The RF3928 is a 50V 280W high power discrete amplifier designed for S-Band pulsed radar, Air Traffic Control and Surveillance and general purpose broadband amplifier applications. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these high-performance amplifiers achieve high output power, high efficiency and flat gain over a broad frequency range in a single package. The RF3928 is a matched GaN transistor packaged in a hermetic, flanged ceramic package. This package provides excellent thermal stability through the use of advanced heat sink and power dissipation technologies. Ease of integration is accomplished through the incorporation of simple, optimized matching networks external to the package that provide wide band gain and power performance in a single amplifier. Ordering Information RF3928S2 RF3928SB RF3928SQ RF3928SR RF3928TR13 RF3928PCBA-410 2-Piece sample bag 5-Piece bag 25-Piece bag 50 Pieces on 7” short reel 250 Pieces on 13” reel Fully assembled evaluation board 2.8GHz to 3.4GHz; 50V operation Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT BiFET HBT RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2012, RF Micro Devices, Inc. DS120508 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 1 of 11 RF3928 Absolute Maximum Ratings Parameter Rating Unit Drain Source Voltage 150 V Gate Source Voltage -8 to +2 V Gate Current (IG) 155 mA Operational Voltage 50 V Ruggedness (VSWR) 3:1 Storage Temperature Range -55 to +125 °C Operating Temperature Range (TL) -40 to +85 °C 250 °C Operating Junction Temperature (TJ) Human Body Model Class 1A MTTF (TJ < 200°C) MTTF (TJ < 250°C) 3.0E + 06 1.4E + 05 Hours TC = 85°C, DC bias only 0.90 °C/W TC = 85°C, 100s pulse, 10% duty cycle 0.18 Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric materials and red phosphorus as a flame retardant, and <2% antimony in solder. Thermal Resistance, Rth (junction to case) 0.25 TC = 85°C, 500s pulse, 10% duty cycle * MTTF – median time to failure for wear-out failure mode (30% Idss degradation) which is determined by the technology process reliability. Refer to product qualification report for FIT (random) failure rate. Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page two. Bias Conditions should also satisfy the following expression: PDISS < (TJ – TC)/RTH J - C and TC = TCASE Parameter Min. Specification Typ. -8 -3 Max. Unit Condition Recommended Operating Condition Drain Voltage (VDSQ) Gate Voltage (VGSQ) Drain Bias Current 50 V -2 V 3400 MHz 2 mA 2 mA 440 Frequency of Operation 2800 mA DC Functional Test IG (OFF) – Gate Leakage ID (OFF) – Drain Leakage VGS (TH) (th) – Threshold Voltage -3.4 V VDS – Drain Voltage at high current 0.22 V RF Functional Test Input Return Loss 2 of 11 VG = -8V, VD = 50V VD = 50V, ID = 20mA VG = 0V, ID = 1.5A [1,2] Small Signal Gain Power Gain VG = -8V, VD = 0V 10 13.6 dB F = 2800MHz, Pin =30dBm 10.5 dB F = 2800MHz, Pin = 44dBm dB F = 2800MHz, Pin = 30dBm -5.5 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS120508 RF3928 Min. Specification Typ. Output Power 54 54.6 dBm Drain Efficiency 45 50 % Parameter Small Signal Gain Max. Unit Condition F = 2800MHz, Pin = 44dBm 14.2 dB F = 3100MHz, Pin = 30dBm 10 10.5 dB F = 3100MHz, Pin = 44dBm dB F = 3100MHz, Pin = 30dBm Output Power 54 54.5 dBm F = 3100MHz, Pin = 44dBm Drain Efficiency 45 52 % 12.7 dB 10.5 dB F = 3400MHz, Pin = 44dBm dB F = 3400MHz, Pin = 30dBm F = 3400MHz, Pin = 44dBm Power Gain Input Return Loss -5.5 Small Signal Gain Power Gain 10 Input Return Loss -5.5 Output Power 54 54.3 dBm Drain Efficiency 45 56 % RF Typical Performance F = 3400MHz, Pin = 30dBm [1,2] Frequency Range 2800 3400 MHz Small Signal Gain 12 dB F = 3100MHz, Pin = 30dBm Power Gain 10 dB POUT = 54dBm Gain Variation with Temperature Output Power (PSAT) Drain Efficiency -0.015 dB/°C At peak output power 54.5 dBm Peak output power 280 W Peak output power 52 % At peak output power [1] Test Conditions: Pulsed Operation, PW = 100s, DC = 10%, VDS = 50V, IDQ = 440mA, T = 25ºC [2] Performance in a standard tuned test fixture DS120508 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 3 of 11 RF3928 Typical Performance in Standard Fixed Tuned Test Fixture over Temperature (Pulsed at Center Band Frequency) 4 of 11 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS120508 RF3928 Typical Performance in Standard Fixed-tuned Test Fixture (T = 25°C, Unless Noted) DS120508 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 5 of 11 RF3928 PulsePowerDissipationDeratingCurve (BasedonMaximumpackagetemperatureandRth) 1200 PowerDissipation(W) 1000 800 600 400 500SPulseWidth,10%DutyCycle 200 100SPulseWidth,10%DutyCycle 0 0 20 40 60 80 100 120 140 MaximumCaseTemperature(°C) 6 of 11 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS120508 RF3928 Package Drawing (All Dimensions in mm) Pin Names and Descriptions Pin 1 2 3 DS120508 Name VG VD GND Description Gate – VG RF Input Drain – VD RF Output Source – Ground Base 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 7 of 11 RF3928 Bias Instruction for RF3928 Evaluation Board ESD Sensitive Material. Please use proper ESD precautions when handling devices of evaluation board. Evaluation board requires additional external fan cooling. Connect all supplies before powering evaluation board. 1. Connect RF cables at RFIN and RFOUT. 2. Connect ground to the ground supply terminal, and ensure that both the VG and VD grounds are also connected to this ground terminal. 3. Apply -6V to VG. 4. Apply 50V to VD. 5. Increase VG until drain current reaches 440mA or desired bias point. 6. Turn on the RF input. IMPORTANT NOTE: Depletion mode device, when biasing the device VG must be applied BEFORE VD. When removing bias VD must be removed BEFORE VG is removed. Failure to follow sequencing will cause the device to fail. NOTE: For optimal RF performance, consistent and optimal heat removal from the base of the package is required. A thin layer of thermal grease should be applied to the interface between the base of the package and the equipment chassis. It is recommended a small amount of thermal grease is applied to the underside of the device package. Even application and removal of excess thermal grease can be achieved by spreading the thermal grease using a razor blade. The package should then be bolted to the chassis and input and output leads soldered to the circuit board. Vg Vd RFIN RFOUT RF3928 2.8 – 3.4GHz 8 of 11 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS120508 RF3928 Evaluation Board Schematic VDRAIN + VGATE L21 L20 L22 L23 R3 C14 C17 C7 C8 + R2 R1 C5 C6 C19 C18 C4 C3 C12 C2 C13 C15 C16 L1 50 strip J1 RF IN RF3928 C1 C10 C11 50 strip J2 RF OUT C9 Evaluation Board Bill of Materials Component Value Manufacturer Part Number R1 R2 R3 C1,C11 C2, C14 C5, C16 C6, C15 C7 C8, C18 C9 C10 C17 L1 L20, L21 L22, L23 C19 C3, C4, C7, C12, C13 10 0 51 22pF 12pF 1000pF 10000pF 120 10F 0.7pF 0.2pF 62pF 22nH 115, 10A 75, 10A 330F NOT POPULATED Panasonic Panasonic Panasonic ATC ATC Novacap TDK Panasonic Panasonic ATC ATC ATC Coilcraft Steward Steward Illinois Capacitor ERJ-8GEYJ100V ERJ-3GEY0R00 ERJ-8GEYJ510 ATC100A220JT ATC100A120JT 0805G102M101NT C2012X7R2A103M ERJ-6GEYJ120V EEA-FC1E100 ATC100A0R7BT ATC100A0R2BT ATC100B620JT 0807SQ-22N_LC 28F0181-1SR-10 35F0121-1SR-10 9337CKE100M DS120508 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 9 of 11 RF3928 Evaluation Board Layout Device Impedances Frequency (MHz) Z Source () Z Load () 2800 60.4 – j0.5 42.1 – j30.5 3000 51.9 – j13.5 33.8 – j25.7 3200 44.1 – j16.5 29.5 – j8.9 3400 38.3 – j16.7 17.0 – j9.0 NOTE: Device impedances reported are the measured evaluation board impedances chosen for a trade off of peak power, peak efficiency and gain performance across the entire frequency bandwidth. 10 of 11 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS120508 RF3928 Device Handling/Environmental Conditions GaN HEMT devices are ESD sensitive materials. Please use proper ESD precautions when handling devices or evaluation boards. GaN HEMT Capacitances The physical structure of the GaN HEMT results in three terminal capacitors similar to other FET technologies. These capacitances exist across all three terminals of the device. The physical manufactured characteristics of the device determine the value of the CDS (drain to source), CGS (gate to source) and CGD (gate to drain). These capacitances change value as the terminal voltages are varied. RFMD presents the three terminal capacitances measured with the gate pinched off (VGS = -8V) and zero volts applied to the drain. During the measurement process, the parasitic capacitances of the package that holds the amplifier is removed through a calibration step. Any internal matching is included in the terminal capacitance measurements. The capacitance values presented in the typical characteristics table of the device represent the measured input (CISS), output (COSS), and reverse (CRSS) capacitance at the stated bias voltages. The relationship to three terminal capacitances is as follows: CISS = CGD + CGS COSS = CGD + CDS CRSS = CGD DC Bias The GaN HEMT device is a depletion mode high electron mobility transistor (HEMT). At zero volts VGS the drain of the device is saturated and uncontrolled drain current will destroy the transistor. The gate voltage must be taken to a potential lower than the source voltage to pinch off the device prior to applying the drain voltage, taking care not to exceed the gate voltage maximum limits. RFMD recommends applying VGS = -5V before applying any VDS. RF Power transistor performance capabilities are determined by the applied quiescent drain current. This drain current can be adjusted to trade off power, linearity, and efficiency characteristics of the device. The recommended quiescent drain current (IDQ) shown in the RF typical performance table is chosen to best represent the operational characteristics for this device, considering manufacturing variations and expected performance. The user may choose alternate conditions for biasing this device based on performance trade off. Mounting and Thermal Considerations The thermal resistance provided as RTH (junction to case) represents only the packaged device thermal characteristics. This is measured using IR microscopy capturing the device under test temperature at the hottest spot of the die. At the same time, the package temperature is measured using a thermocouple touching the backside of the die embedded in the device heatsink but sized to prevent the measurement system from impacting the results. Knowing the dissipated power at the time of the measurement, the thermal resistance is calculated. In order to achieve the advertised MTTF, proper heat removal must be considered to maintain the junction at or below the maximum of 200°C. Proper thermal design includes consideration of ambient temperature and the thermal resistance from ambient to the back of the package including heatsinking systems and air flow mechanisms. Incorporating the dissipated DC power, it is possible to calculate the junction temperature of the device. DS120508 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 11 of 11