CYStech Electronics Corp. Spec. No. : C709H8 Issued Date : 2014.03.13 Revised Date : 2014.03.14 Page No. : 1/9 N-Channel Logic Level Enhancement Mode Power MOSFET MTB6D0N03AH8 Features • Single Drive Requirement • Low On-resistance • Fast Switching Characteristic • Dynamic dv/dt rating • Repetitive Avalanche Rated • Pb-free lead plating and Halogen-free package Symbol BVDSS ID RDS(ON)@VGS=10V, ID=25A RDS(ON)@VGS=4.5V, ID=20A 30V 56A 6.8 mΩ(typ) 10.4 mΩ(typ) Outline DFN5×6 MTB6D0N03AH8 Pin 1 G：Gate D：Drain S：Source Ordering Information Device MTB6D0N03AH8-0-T6-G Package DFN 5 ×6 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T6 : 3000 pcs / tape & reel,13” reel Product rank, zero for no rank products Product name MTB6D0N03AH8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C709H8 Issued Date : 2014.03.13 Revised Date : 2014.03.14 Page No. : 2/9 Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C, VGS=10V Continuous Drain Current @ TC=100°C, VGS=10V Pulsed Drain Current Avalanche Current Avalanche Energy @ L=0.1mH, ID=30A, RG=25Ω Repetitive Avalanche Energy @ L=0.05mH TC=25°C Total Power Dissipation TC=100°C Operating Junction and Storage Temperature Range VDS VGS Limits Tj, Tstg 30 ±20 56 35 140 *1 30 45 15 *2 50 20 -55~+150 Symbol Rth,j-c Rth,j-a Value 2.5 50 *3 ID IDM IAS EAS EAR PD Unit V A mJ W °C Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Unit °C/W °C/W Note : 1. Pulse width limited by maximum junction temperature 2. Duty cycle≤1% 3. Surface mounted on 1 in² copper pad of FR-4 board, t≤10s; 125°C/W when mounted on minimum copper pad. Characteristics (TC=25°C, unless otherwise specified) Symbol Static BVDSS VGS(th) GFS *1 IGSS IDSS RDS(ON) *1 Dynamic Ciss Coss Crss MTB6D0N03AH8 Min. Typ. Max. Unit 30 1.0 - 1.7 25 6.8 10.4 2.5 ±100 1 25 9 15 V V S nA - 802 153 98 - μA mΩ pF Test Conditions VGS=0V, ID=250μA VDS = VGS, ID=250μA VDS =5V, ID=20A VGS=±20V VDS =24V, VGS =0V VDS =20V, VGS =0V, Tj=125°C VGS =10V, ID=25A VGS =4.5V, ID=20A VGS=0V, VDS=15V, f=1MHz CYStek Product Specification CYStech Electronics Corp. Spec. No. : C709H8 Issued Date : 2014.03.13 Revised Date : 2014.03.14 Page No. : 3/9 Characteristics (TC=25°C, unless otherwise specified) Symbol Qg (VGS=10V) *1, 2 Qg (VGS=4.5V) *1, 2 Qgs *1, 2 Qgd *1, 2 td(ON) *1, 2 tr *1, 2 td(OFF) *1, 2 tf *1, 2 Rg Source-Drain Diode IS *1 ISM *3 VSD *1 trr Qrr Min. - Typ. 12 8 2.9 4.4 7 4 15 6 4.7 Max. - - 0.87 22 12 50 140 1.3 - Unit Test Conditions nC VDS=15V, VGS=10V, ID=25A ns VDS=15V, ID=20A, VGS=10V, RGS=2.7Ω Ω VGS=15mV, VDS=0V, f=1MHz A V ns nC IF=25A, VGS=0V IF=IS, dIF/dt=100A/μs Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% *2.Independent of operating temperature *3.Pulse width limited by maximum junction temperature. Recommended Soldering Footprint unit : mm MTB6D0N03AH8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C709H8 Issued Date : 2014.03.13 Revised Date : 2014.03.14 Page No. : 4/9 Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 1.4 BVDSS, Normalized Drain-Source Breakdown Voltage 120 10V, 7V, 6V, 5V ID, Drain Current(A) 100 VGS=4.5V 80 VGS=4V 60 VGS=3.5V 40 VGS=3V 1.2 1 0.8 ID=250μA, VGS=0V 0.6 20 VGS=2.5V 0.4 0 0 2 4 6 8 VDS , Drain-Source Voltage(V) -75 -50 -25 10 Static Drain-Source On-State resistance vs Drain Current Reverse Drain Current vs Source-Drain Voltage 1.2 VGS=2.5V VSD, Source-Drain Voltage(V) R DS(ON), Static Drain-Source On-State Resistance(mΩ) 1000 100 VGS=3V VGS=4.5V 10 VGS=10V 1 Tj=25°C 0.8 0.6 Tj=150°C 0.4 0.2 1 0.1 1 10 ID, Drain Current(A) 100 0 4 8 12 16 IDR , Reverse Drain Current(A) 20 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage 2.4 R DS(ON), Normalized Static DrainSource On-State Resistance 100 R DS(ON), Static Drain-Source OnState Resistance(mΩ) 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) 90 ID=25A 80 70 60 50 40 30 20 10 VGS=10V, ID=25A 2 1.6 1.2 0.8 RDS(ON) @Tj=25°C : 6.8 mΩ typ 0.4 0 0 MTB6D0N03AH8 2 4 6 8 VGS, Gate-Source Voltage(V) 10 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) CYStek Product Specification Spec. No. : C709H8 Issued Date : 2014.03.13 Revised Date : 2014.03.14 CYStech Electronics Corp. Page No. : 5/9 Typical Characteristics(Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage VGS(th), Normalized Threshold Voltage 10000 Capacitance---(pF) Ciss 1000 C oss 100 Crss f=1MHz 1.4 1.2 ID=1mA 1 0.8 ID=250μA 0.6 0.4 10 0.1 1 10 VDS, Drain-Source Voltage(V) -75 -50 -25 100 Forward Transfer Admittance vs Drain Current 50 75 100 125 150 175 Gate Charge Characteristics VDS=15V VGS, Gate-Source Voltage(V) GFS, Forward Transfer Admittance(S) 25 10 100 10 1 VDS=5V Pulsed Ta=25°C 0.1 0.01 0.001 8 VDS=10V VDS=5V 6 4 2 ID=25A 0 0.01 0.1 1 ID, Drain Current(A) 0 10 3 6 9 12 Qg, Total Gate Charge(nC) 15 Maximum Drain Current vs Case Temperature Maximum Safe Operating Area 70 RDS(ON) Limit 100 ID, Maximum Drain Current(A) 1000 ID, Drain Current(A) 0 Tj, Junction Temperature(°C) 100μs 1ms 10ms 100m 10 1s TC=25°C, Tj=150°C VGS=10V,RθJC=2.5°C/W Single Pulse 1 DC 60 50 40 30 20 VGS=10V, RθJC=2.5°C/W 10 0 0.1 0.1 MTB6D0N03AH8 1 10 VDS, Drain-Source Voltage(V) 100 25 50 75 100 125 TC, Case Temperature(°C) 150 175 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C709H8 Issued Date : 2014.03.13 Revised Date : 2014.03.14 Page No. : 6/9 Typical Characteristics(Cont.) Typical Transfer Characteristics 120 VDS=10V ID, Drain Current (A) 100 80 60 40 20 0 0 2 4 6 VGS , Gate-Source Voltage(V) 8 Transient Thermal Response Curves 1 r(t), Normalized Effective Transient Thermal Resistance D=0.5 0.1 0.2 0.1 1.RθJC(t)=r(t)*RθJC 2.Duty Factor, D=t1/t2 3.TJM -TC=PDM*RθJC(t) 4.RθJC=2.5°C/W 0.05 0.02 0.01 0.01 0.001 1.E-04 Single Pulse 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 t1, Square Wave Pulse Duration(s) MTB6D0N03AH8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C709H8 Issued Date : 2014.03.13 Revised Date : 2014.03.14 Page No. : 7/9 Reel Dimension Carrier Tape Dimension Pin #1 MTB6D0N03AH8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C709H8 Issued Date : 2014.03.13 Revised Date : 2014.03.14 Page No. : 8/9 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTB6D0N03AH8 CYStek Product Specification Spec. No. : C709H8 Issued Date : 2014.03.13 Revised Date : 2014.03.14 CYStech Electronics Corp. Page No. : 9/9 DFN5×6 Dimension Marking : Device Name B6D0 N03AT Date Code 8-Lead DFN5×6 Plastic Package CYS Package Code : H8 Millimeters Min. Max. 0.900 1.000 0.254 REF 4.944 5.096 5.974 6.126 3.910 4.110 3.375 3.575 4.824 4.976 5.674 5.826 DIM A A3 D E D1 E1 D2 E2 Inches Min. Max. 0.035 0.039 0.010 REF 0.195 0.201 0.235 0.241 0.154 0.162 0.133 0.141 0.190 0.196 0.223 0.229 DIM k b e L L1 H θ Millimeters Min. Max. 1.190 1.390 0.350 0.450 1.270 TYP. 0.559 0.711 0.424 0.576 0.574 0.726 10° 12° Inches Min. Max. 0.047 0.055 0.014 0.018 0.050 TYP. 0.022 0.028 0.017 0.023 0.023 0.029 10° 12° Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTB6D0N03AH8 CYStek Product Specification